DQ131 Search Results

Contextual Info: STI368003 72-PIN SIMMS 8M X 36 BITS DRAM SIMM Memory Module FEATURES • GENERAL DESCRIPTION Performance range: ^RAC ^CAC ^RC STI368003-60 60ns 15ns 110ns STI368003-70 70ns 20ns 130ns • Fast Page Mode operation • CAS-before-RAS refresh capability • RAS-only and Hidden refresh capability

31-oq

Abstract: 7C342-25 CY7C342-35HMB 7C342-35 CY7C342 CY7C342B OQ11
Contextual Info: CY7C342 CY7C342B rif CYPRESS 128-Macrocell M AX EPLD Features Functional Description • 128 macrocells in 8 LABs • 8 dedicated inputs, 52 bidirectional I/O pins • Programmable interconnect array • 0.8-micron double-metal CMOS EPROM technology CY7C342

Contextual Info: UG34C322 4 4GTG 16M Bytes (4M x 32) DRAM 72Pin SODIMM based on 4M X 4 Features General Description The UG34C322(4)4GTG is a 4,149,304 bits by 32 SODIMM module.The UG34C322(4)4GTG is assembled using 8 pcs of 4M x 4 2K/4K refresh DRAMs in 24-pin TSOP package mounted on a 72pin printed circuit board.

DQ111

Abstract: DQ139 DQ131
Contextual Info: UGSN7004A8HHF-256 Data sheets can be downloaded at www.unigen.com 256MB 8M x 144 2PCS FPM MODE DRAM MODULE FPM Mode buffered DIMM With ECC based on 18 pcs 8M x 8 DRAM with LVTTL, 8K Refresh 256MB 200pin DIMM (2PCS 128MB (8M x 144) module kit) FEATURES Single 5.0V ± 10% power supply

BA5 marking

Abstract: DQ112-127 BA7 marking HMD4M144D9WG DQ113 BA6 marking BA6137 DQ99
Contextual Info: HANBit HMD4M144D9WG 64Mbyte 4Mx144 200-pin ECC Mode 4K Ref. DIMM Design 5V Part No. HMD4M144D9WG GENERAL DESCRIPTION The HMD4M144D9WG is a 4Mbit x 144bit dynamic RAM high-density memory module. The module consists of eight CMOS 4Mx16bit DRAMs in 50-pin TSOP packages and one CMOS 4M x 16bit DRAM in 50pin TSOP package

Contextual Info: M IC R O N 512K 512K X MT20D51240 40 DRAM MODULE 40 DRAM FAST PAGE MODE MT20D51240 LOW POWER, EXTENDED REFRESH (MT20D51240 L) FEATURES • • • • • • • • • PIN ASSIGNMENT (Top View) 72-pin single-in-line package High-performance, CMOS silicon-gate process.

2m137

Contextual Info: MT90733 CM OS @ DS3 Framer DS3F MITEL Preliminary Information Features ISSUE 3_ January 1996 M aps broadband payloads in the DS3 form at O rdering Inform ation DS3 payload access in eith er bit-serial or n ibble-parallel m ode MT90733AP 68 Pin PLCC

1186C

Abstract: cxd1135q cxd1130q
Contextual Info: CXD1186CQ/CR SONY« C D - R O M Decoder Description CXD1186C is a CD-ROM decoder LSI. CXD1186CQ 80pln QFP Plastic Features CXD1186CR 80pin VQFP (Plastic) • Corresponds to CD-ROM, CD-I and CD-ROM XA formats. • Real time error Correction. (Erasure Correction

Contextual Info: KMM332F400CS-L KMM332F41OCS-L DRAM MODULE KMM332F400CS-L & KMM332F410CS-L Fast Page with EDO Mode 4M x 32 DRAM SODIMM Using 4MX4, 4K & 2K Ref., 3.3V, Low power/Self-Refresh GENERAL DESCRIPTION FEATURES The Samsung KMM332F40 1 0CS is a 4Mx32bits Dynamic Part Identification

Contextual Info: ADVANCE M IC R O N 4 MEG DRAM MODULE X M T10D440 40 DRAM M OD ULE 4 MEG x 40 DRAM FAST PAGE MODE FEATURES • • • • • Industry-standard 72-pin single in-line package High-performance CMOS silicon-gate process Single 5V ±10% pow er supply All device pins TTL-compatible

Contextual Info: & M i c r o c h 2 4 A A 0 1 /0 2 i p 1K/2K 1.8V CMOS Serial EEPROMs PACKAGE TYPE nFEATURES • Single supply with operation down to 1.8V • Low power CMOS technology - 1 mA active current typical - 10 standby current typical at 5.5V - 3 |iA standby current typical at 1.8V

SL36S4B8M2F-A60

Abstract: SL36T4B8M2F-A60 DQ27-30 DQ18-21
Contextual Info: SL36 T/S 4B8M2F-A60 8M X 36 Bits DRAM SIMM with Extended Data Out (EDO) FEATURES • Performance range: tCAC tRC tRAC 60ns 15ns • • • • • • • • GENERAL DESCRIPTION The SiliconTech SL36(T/S)4B8M2F-A60 is a 8M x 36 bits Dynamic RAM (DRAM) Single In-line Memory Module (SIMM).

DQ2060

Abstract: DC1065 EB285 EBSA-285 R164 SA110 B20B20 A59A59 CPU-A13 CPUD22
Contextual Info: A B C D COPYRIGHT C 8 1997 DIGITAL EQUIPMENT CORPORATION 8 16 17 18 19 20 21 sht sht sht sht sht sht 7 CHK CHANGE NO. REV CPU, CPU_, a Block Address X-Bus XBUF_, have PCI +3V Stand - +2V, - - - TAG_,RST_ - - 6 bidirects this 5 is Debug Port their Serial Spare

HMD8M36M18

Abstract: HMD8M36M18G
Contextual Info: HANBit HMD8M36M18G 32Mbyte 8Mx36 72-pin FP with Parity MODE 2K Ref. SIMM Design 5V Part No. HMD8M36M18, HMD8M36M18G GENERAL DESCRIPTION The HMD8M36M18G is a 8M x 36bit dynamic RAM high density memory module. The module consists of sixteen CMOS 4M x 4bit DRAM in 24-pin SOJ packages and two CMOS 4Mx 4bit Quad-CAS DRAM in 28pin SOJ packages

mn4117405

Abstract: MN4117405CTT-06 MN4117
Contextual Info: UG34E3224GTG-6 Revision History Jan 25 , 2000 Rev - B May 23 , 1997 Rev - A Added More Detailed Dimension Information Of PCB , Full Data sheet Changed to new format. Datasheet released. 45388 Warm Springs Blvd. Fremont, CA. 94539 Tel: 510 668-2088 Fax: (510) 661-2788

Contextual Info: KMM5362000A/AG DRAM MODULES 2M X36 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION The Samsung KMM5362000A is a 2M bitsX36 Dynamic RAM high density memory module. The Samsung K M M 5362000A consist of sixteen CMOS 1M X 4 bit DRAMs in 20-pin SOJ package and eight CMOS 1M X 1

MB8533

Abstract: mb81c256a MB85336 MB81C256
Contextual Info: i ï * 1 1 9 8 0 January 1991 Edition 1.0 _ DATA SHEET FUJITSU MB85336-60/-70/-80/-10 CMOS 256K x 36 Fast Pape Mode DRAM Module The Fujitsu MB85336 is a fully decoded, CMOS dynamic random access memory DRAM module consisting of eight MB81C4256A devices and four MB81C256A

KMM332F400CS-L

Abstract: KMM332F410CS-L
Contextual Info: KMM332F400CS-L KMM332F410CS-L DRAM MODULE KMM332F400CS-L & KMM332F410CS-L Fast Page with EDO Mode 4M x 32 DRAM SODIMM Using 4MX4, 4K & 2K Ref., 3.3V, Low power/Self-Refresh GENERAL DESCRIPTION FEATURES The Samsung KMM332F40 1 0CS is a 4Mx32bits Dynamic RAM high density memory module. The Samsung

Contextual Info: > f smart sm a r t mem ory 256K X 16 DRAM Modular Technologies Inc. m odule TECHNICAL DATASHEET SMS516256-08/10/12 GENERAL DESCRIPTION FEATURES The SMS516256 is a high density, high speed 256K X 16 dynamic RAM module in a 35 pin single in-line package with edge

ICC-427

Contextual Info: M IC R O N 256K DRAM X MT10D25640 40 DRAM M ODULE 256K x 40 DRAM _ MOD ULF L / V / I— ! — I V I W FEATURES • • • • • • • • • 72-pin single-in-line package High-performance, CMOS silicon-gate process. Single 5V ±10% power supply All device pins are fully TTL compatible

Contextual Info: [M IC R O N 1 MEG □RAM . _ MODULE W W MT10D140 40 DRAM MODULE 1 MEG x 40 DRAM _ _ ^ •■I w X FAST PAGE MODE MT10D140 lo w p o w e r, FEXTENDED Y T F N in P n RREFRESH F (MT10D140 L) L .I— FEATURES PIN ASSIGNMENT (Top View) 72-pin single-in-line package

ABP1

Contextual Info: Advance Data Sheet March 1994 , sA TC T Microelectronics T7650 PHOENIX 8-bit Parallel Buffered 2-by-2 Switching Node for Broadband Switching Networks Features • Asynchronous transfer mode ATM cell compati­ ble ■ Crosspoint-buffered, self-routing, 2-by-2 switching

Contextual Info: » ADVANCE MICRON • 4 MEG SEMICONDUCTOR MC X MT10D440 40 DRAM MODULE 4 MEG X 40 DRAM DRAM MODULE FAST PAGE MODE FEATURES Industry-standard 72-pin single in-line package High-performance CMOS silicon-gate process Single 5V ±10% power supply All device pins TTL-compatible

Contextual Info: M IC R O N I □ p . a MT20D240 2 MEG x 40 DRAM MODULE 2 m _ _ _ M E G 4 x D R A M FAST PAGE MODE MT20D240 LOW POWER, FEXTENDED y T F N I D F n RF REFRESH (MT20D240 L) MODULE IVI V / L / U U L . FEATURES 72-pin single-in-line package High-performance CMOS silicon-gate process.