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    104ns Datasheets

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    1995 - edo ram 72pin

    Abstract: TC5117405 TC5118165 TC5118 bsg70 simm EDO 72pin 104ns TC5118165BJ hidden refresh TC51181
    Text: Access Time 15ns 20ns tRC 104ns 124ns 25ns 30ns Column Address Access Time , 104ns 124ns 25ns 30ns Column Address Access Time Cycle Time tHPC Hyper Page Mode Cycle , 60ns 70ns tAA 30ns 35ns tCAC CAS Access Time 15ns 20ns tRC 104ns 124ns


    Original     		PDF THM3210B5BS/BSG-60 THM3210B5BS/BSG-70 THM3210B5BS/BSG TC5118165BJ 890mW THMxxxxxx-60) 575mW THMxxxxxx-70) edo ram 72pin TC5117405 TC5118165 TC5118 bsg70 simm EDO 72pin 104ns hidden refresh TC51181

    2009 - K5E1H12ACM

    Abstract: samsung K5E1H12ACM samsung mobile samsung nand ddr SEC k4x DDR333 samsung ddr samsung dram
    Text: uses both low and high frequencies in turn. For high frequency (96MHz, 10.4ns period), tRFC is 10 clocks which is 104ns. For low frequency (9.6MHz, 104ns period), tRFC is 5 clocks which is 520ns , moment, for high frequency (96MHz, 10.4ns ); tRFC becomes 5 clocks which is only 52ns. Solution Though


    Original     		PDF figure15. Figure15 120ns, K5E1H12ACM samsung K5E1H12ACM samsung mobile samsung nand ddr SEC k4x DDR333 samsung ddr samsung dram

    1995 - tc5118165bj

    Abstract: TC5118165 TC5117405 SOJ42-P-400 TC5117405BSJ hidden refresh TSOP70-P-400 TC51181 TC5118 TOSHIBA TSOP50-P-400
    Text: tRC 104ns 124ns 25ns 30ns Column Address Access Time Cycle Time tHPC Hyper Page , 60ns 72ns tAA 30ns 35ns tCAC CAS Access Time 17ns 20ns tRC 104ns 124ns , 60ns 72ns tAA 30ns 35ns tCAC CAS Access Time 17ns 20ns tRC 104ns 124ns , 17ns 20ns tRC 104ns 124ns 25ns 30ns Column Address Access Time Cycle Time


    Original     		PDF TC5116405BSJ/BST-60 TC5116405BSJ/BST-70 TC5116405BSJ/BST 300mil) cycles/64ms TC51V16325BJ: SOJ70-P-400A tc5118165bj TC5118165 TC5117405 SOJ42-P-400 TC5117405BSJ hidden refresh TSOP70-P-400 TC51181 TC5118 TOSHIBA TSOP50-P-400

    ALVCH16244

    Abstract: No abstract text available
    Text: time and 1.20ns of fall time when all bits are switching and 1.20ns of rise time and 1.04ns of fall , Switching PERICOM Competition 2.16ns 2.12ns 1.20ns 920ps 1.04ns 680ps 373mV 996mV 653mV 1.99V


    Original     		PDF ALVCH16244 ALVCH16244s ALVCH16244 680mV 160mV 710mV 615mV ALVCH16244.

    2001 - KVR4X32-60ET/16

    Abstract: No abstract text available
    Text: 104ns 25ns 60ns (min.) 10,000ns (max.) +5V (+/- 10%) 4.84 W (operating) 88 mW (max. standby) 94 V


    Original     		PDF KVR4X32-60ET/16 72-Pin 32-bit 72Pin 104ns 000ns VALUERAM0045-001 KVR4X32-60ET/16

    edo dram 60ns 72-pin simm

    Abstract: SL36S4B4M2F-A60 SL36T4B4M2F-A60
    Text: SL36(S/T)4B4M2F-A60 4M X 36 Bits DRAM 72-Pin SIMM with Extended Data Out (EDO) and ECC FEATURES · Performance range: tCAC tRC tRAC 60ns 15ns · · · · · · · · GENERAL DESCRIPTION The SiliconTech SL36(S/T)4B4M2F-A60 is a 4M x 36 bits Dynamic RAM (DRAM) Single In-line Memory Module (SIMM). The module consists of nine CMOS 4M x 4 bits DRAMs in 24pin 300-mil SOJ packages mounted on a 72-pin glass epoxy substrate. Decoupling capacitors of 0.1µF are also mounted. tHPC 104ns


    Original     		PDF 4B4M2F-A60 72-Pin 4B4M2F-A60 24pin 300-mil 104ns cycles/32ms A0-A10 edo dram 60ns 72-pin simm SL36S4B4M2F-A60 SL36T4B4M2F-A60

    72 pin dimm

    Abstract: STI322004D1-60G 72-Pin SO-DIMM
    Text: . tHPC 104ns 25ns EDO Mode operation CAS-before-RAS refresh capability RAS-only and Hidden


    Original     		PDF STI322004D1-60G STI322004D1-60G 28-pin 400-mil 72-pin 104ns cycles/32ms A0-A10 72 pin dimm 72-Pin SO-DIMM

    edo dram 50ns 72-pin simm

    Abstract: edo dram 72-pin simms 64mb dram 72-pin simms 64mb BDQ30 64mb edo dram simm BDQ22 4c16m4 BDQ31 72 simm edo dram 64mb
    Text: SL36(S/T)4C16M4F-AxxC 16M X 36 Bits (64MB) DRAM 72-Pin SIMM with Extended Data Out (EDO) FEATURES · GENERAL DESCRIPTION Performance range: Part # tRAC tCAC tRC The SiliconTech SL36(S/T)4C16M4F-AxxC is a 16M x 36 bits Dynamic RAM (DRAM) Single In-line Memory Module (SIMM). This module consists of nine CMOS 16M x 4 bits 3.3V DRAM components in 32-pin 400-mil SOJ packages. Decoupling capacitors of 0.1µF are also mounted. tHPC SL.-A50C 50ns 13ns 84ns 20ns SL.-A60C 60ns 15ns 104ns


    Original     		PDF 4C16M4F-AxxC 72-Pin 4C16M4F-AxxC 32-pin 400-mil -A50C -A60C 104ns cycles/64ms A0-A11 edo dram 50ns 72-pin simm edo dram 72-pin simms 64mb dram 72-pin simms 64mb BDQ30 64mb edo dram simm BDQ22 4c16m4 BDQ31 72 simm edo dram 64mb

    1998 - UG38W324

    Abstract: No abstract text available
    Text: 60ns tCAC 13ns 15ns tRC 84ns 104ns Pin Names Pin Name A0 ~ A11 DQ(0 ~7,9~16, 18~25,27~34


    Original     		PDF UG38W3248HSG 72Pin UG38W3248HSG 32-pin 72pin) 1050mil) Re-Tek-298 UG38W324

    SL32

    Abstract: SL32S4B4M2E-A60V SL32T4B4M2E-A60V
    Text: SL32(S/T)4B4M2E-A60V 4M X 32 Bits DRAM 72-Pin SIMM with EDO and 3.3V Power Supply FEATURES · Performance range: tCAC tRC tRAC 60ns · · · · · · · · GENERAL DESCRIPTION 15ns tHPC 104ns 25ns Extended Data Out (EDO) Mode operation called hyper page mode CAS-before-RAS refresh capability RAS-only and Hidden refresh capability LVTTL compatible inputs and outputs +3.3V + 0.3V power supply 2048 cycles/32ms refresh JEDEC standard pinout (except for 3.3V power supply) Gold or Tin edge


    Original     		PDF 4B4M2E-A60V 72-Pin 104ns cycles/32ms 4B4M2E-A60V 24pin A0-A10 SL32 SL32S4B4M2E-A60V SL32T4B4M2E-A60V

    edo dram 72-pin simms 64mb

    Abstract: dram 72-pin simms 64mb 64mb 72-pin simm SL32 64mb edo dram simm simm 64MB BDQ28
    Text: SL32(S/T)4C16M4E-AxxC 16M X 32 Bits (64MB) DRAM 72-Pin SIMM with Extended Data Out (EDO) FEATURES · GENERAL DESCRIPTION Performance range: tRAC tCAC tRC The SL32(S/T)4C16M4E-AxxC is a 16M x 32 bit Dynamic RAM (DRAM) Single In-line Memory Module (SIMM). This module consists of eight CMOS 16M x 4 bit 3.3V DRAM components in 32-pin 400-mil TSOP-II packages. Decoupling capacitors of 0.1µF are also mounted. tHPC SL.-A60C 60ns 15ns 104ns 25ns SL.-A70C 70ns 20ns 124ns 30ns ·


    Original     		PDF 4C16M4E-AxxC 72-Pin 4C16M4E-AxxC 32-pin 400-mil -A60C 104ns -A70C 124ns cycles/64ms edo dram 72-pin simms 64mb dram 72-pin simms 64mb 64mb 72-pin simm SL32 64mb edo dram simm simm 64MB BDQ28

    2004 - Not Available

    Abstract: No abstract text available
    Text: 60ns 15ns 104ns 25ns Dimensions A Side Millimeters A 107.95 ± 0.200 Inches


    Original     		PDF TS4MED3660 TS4MED3660 36-bit 304-word

    2006 - Not Available

    Abstract: No abstract text available
    Text: 15ns 104ns 25ns Dimensions Millimeters Inches A 59.69 ± 0.200 2.350 ± 0.008 B


    Original     		PDF TS2MEDM32V6R TS2MEDM32V6R 152-word 32-bit 32-bit 1Mx16-bit,

    transistor A11

    Abstract: SL32T4A8M4E-A60 edo dram 60ns 72-pin simm
    Text: SL32T4A8M4E-A60 8M X 32 Bits DRAM SIMM with Extended Data Out (EDO) FEATURES · Performance range: tCAC tRC tRAC 60ns · · · · · · · · GENERAL DESCRIPTION 15ns The SiliconTech SL32T4A8M4E-A60 is a 8M x 32 bits Dynamic RAM high density memory module. This module consists of sixteen CMOS 1M x 4 bits DRAMs in 300-mil 24-pin SOJ packages mounted on a 72-pin glass epoxy substrate. Decoupling capacitors of 0.1µF are mounted for the DRAMs. tHPC 104ns 25ns Extended Data Out (EDO


    Original     		PDF SL32T4A8M4E-A60 SL32T4A8M4E-A60 300-mil 24-pin 72-pin 104ns cycles/64ms A0-A11 transistor A11 edo dram 60ns 72-pin simm

    SL32D8A2M2E-A50V

    Abstract: SL32D8A2M2E-A60V 72-Pin SO-DIMM
    Text: · · · Performance range: tRAC 60ns 15ns 104ns 25ns EDO operation


    Original     		PDF SL32D8A2M2E-AxxV SL32D8A2M2E-AxxV 28-pin 300-mil 72-pin -A50V -A60V 104ns A0-A10 SL32D8A2M2E-A50V SL32D8A2M2E-A60V 72-Pin SO-DIMM

    SLB-70

    Abstract: SL32 SL32S4B4M2E-B60
    Text: SL32(S/T)4B4M2E-Bxx 4M X 32 Bits DRAM 72-Pin SIMM with Extended Data Out (EDO) FEATURES · GENERAL DESCRIPTION Performance range: tRAC tCAC tRC SL.-B60 · · · · · · · 60ns 15ns 104ns 25ns SL.-B70 · The SiliconTech SL32(S/T)4B4M2E-B60 is a 4M x 32 bits Dynamic RAM (DRAM) Single In-line Memory Module (SIMM). This module consists of eight CMOS 4M x 4 bits DRAMs in 24pin SOJ packages mounted on a 72-pin glass epoxy substrate. Eight 0.1µF decoupling capacitors are


    Original     		PDF 72-Pin 104ns 4B4M2E-B60 24pin 124ns A0-A10 SLB-70 SL32 SL32S4B4M2E-B60

    SL32T4C32M4E-A60

    Abstract: edo dram 72-pin simms 32Mx32 edo dram 60ns 72-pin simm
    Text: SL32T4C32M4E-A60 32M X 32 Bits DRAM SIMM with EDO FEATURES · Performance range: tRC tRAC tCAC 60ns · · · · · · · · GENERAL DESCRIPTION 15ns 104ns The SiliconTech SL32T4C32M4E-A60 is a 32M x 32 bits Dynamic RAM (DRAM) Single In-line Memory Module (SIMM). This module consists of sixteen CMOS 16M x 4 bits 5.0V DRAMs in 32-pin 400-mil TSOP-II packages. tHPC 25ns Extended Data Out (EDO) operation CAS-before-RAS refresh capability RAS-only and Hidden refresh


    Original     		PDF SL32T4C32M4E-A60 104ns SL32T4C32M4E-A60 32-pin 400-mil cycles/64ms 72-pin moun0-23 A0-A11 A0-A11 edo dram 72-pin simms 32Mx32 edo dram 60ns 72-pin simm

    1996 - 512X16

    Abstract: MB81V4265S 256K x 16-Bit CMOS Dynamic RAM fast page 70
    Text: Access Time 30ns max. 35ns max. Randam Cycle Time 104ns min. 119ns min. Hyper Page Mode


    Original     		PDF MB81V4265S-60/-70 16BIT MB81V4265S 512x16 400mil) 256K x 16-Bit CMOS Dynamic RAM fast page 70

    DQ 21

    Abstract: edo ram 72pin 72-PIN STI362004-60T edo dram 60ns 72-pin simm
    Text: 72-PIN SIMMS - STI362004-60T 2M X 36 BITS DRAM SIMM with Extended Data Out (EDO) FEATURES · Performance range: tCAC tRC tRAC 60ns 15ns · · · · · · · · GENERAL DESCRIPTION SiliconTech's STI362004-60T is a 2M x 36 bits Dynamic RAM memory module. SiliconTech's STI362004-60T consists of eighteen CMOS 1M x 4 bits DRAMs in 20-pin 300-mil SOJ packages. Decoupling capacitors of 0.1µF are mounted for the DRAMs. tHPC 104ns 25ns EDO Mode operation CAS-before-RAS refresh capability


    Original     		PDF 72-PIN STI362004-60T STI362004-60T 20-pin 300-mil 104ns cycles/16ms 0034M DQ 21 edo ram 72pin edo dram 60ns 72-pin simm

    STI408004-60T

    Abstract: simm 72 pinout DQ28-31
    Text: STI408004-60T 8M X 40 Bits DRAM SIMM with ECC and EDO FEATURES · GENERAL DESCRIPTION Performance range: tRC tRAC tCAC This product is a 8M x 40 bits Dynamic RAM (DRAM) Single Inline Memory Module (SIMM). This module consists of twenty CMOS 4M x 4 bits DRAMs in 24-pin SOJ packages mounted on a 72-pin glass epoxy substrate. A 0.1 µF decoupling capacitor is mounted for each DRAM. tHPC 60ns 15ns 104ns 25ns · · · · · · · · EDO operation CAS-before-RAS refresh capability


    Original     		PDF STI408004-60T 24-pin 72-pin 104ns cycles/32ms A0-A10 DQ24-27 DQ28-31 STI408004-60T simm 72 pinout DQ28-31

    128MB 72-pin SIMM

    Abstract: dram 72-pin simm 128mb SL32 SL32S4F32M4E-A60C SL32T4F32M4E-A60C
    Text: capacitors of 0.1µF are also mounted on the substrate. tHPC 104ns 25ns Extended Data Out (EDO


    Original     		PDF 4F32M4E-A60C 128MB) 72-Pin 4F32M4E-A60C 400-mil 32-pin 104ns A0-A11 128MB 72-pin SIMM dram 72-pin simm 128mb SL32 SL32S4F32M4E-A60C SL32T4F32M4E-A60C

    SL32

    Abstract: SL32S4B4M2E-A60 SL32T4B4M2E-A60
    Text: SL32(S/T)4B4M2E-Axx 4M X 32 Bits DRAM 72-Pin SIMM with Extended Data Out (EDO) FEATURES · GENERAL DESCRIPTION Performance range: tRAC tCAC tRC SL.-A60 · · · · · · · 60ns 15ns 104ns 25ns SL.-A70 · The SiliconTech SL32(S/T)4B4M2E-A60 is a 4M x 32 bits Dynamic RAM (DRAM) Single In-line Memory Module (SIMM). This module consists of eight CMOS 4M x 4 bits DRAMs in 24pin SOJ packages mounted on a 72-pin glass epoxy substrate. Eight 0.1µF decoupling capacitors are


    Original     		PDF 72-Pin 104ns 4B4M2E-A60 24pin 124ns A0-A10 SL32 SL32S4B4M2E-A60 SL32T4B4M2E-A60

    KM416C64

    Abstract: No abstract text available
    Text: 17ns 20ns -►I tRC 104ns 104ns 124ns V bb Generator ÜW - tHPC 25ns 25ns 30ns


    OCR Scan     		PDF KM416C64 64Kx16 KM416C64/L KM416C64

    SL32

    Abstract: 72 pin simm pinout edo dram 60ns 72-pin simm
    Text: SL32(S/T)8A2M2E-Axx 2M X 32 Bits DRAM SIMM with Extended Data Out (EDO) FEATURES · GENERAL DESCRIPTION Performance range: tRAC tCAC tRC SL.-A60 · · · · · · · 60ns 15ns 104ns 25ns SL.-A70 · The SiliconTech SL32(S/T)8A2M2E-Axx is a 2M x 32 bits Dynamic RAM (DRAM) high density memory module. This module consists of four CMOS 2M x 8 bits DRAMs in 28-pin SOJ packages mounted on a 72-pin glass epoxy substrate. Four 0.1µF decoupling capacitors are mounted for the DRAMs


    Original     		PDF 104ns 28-pin 72-pin 124ns A0-A10 SL32 72 pin simm pinout edo dram 60ns 72-pin simm

    SL32D4C16M4E-A60V

    Abstract: 16MX32
    Text: : tRAC 60ns 15ns 104ns 25ns The SL32D4C16M4E-AxxV is a Small Outline Dual In-line Memory


    Original     		PDF SL32D4C16M4E-AxxV SL32D4C16M4E-AxxV 32-pin 400-mil 72-pin 104ns 72-pin A0-A11 SL32D4C16M4E-A60V 16MX32
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