BFT31 Search Results

2SC3361-5

Abstract: 2SC181SL-O BFR41 L 2 KT3102 TEC9014B LOW-POWER SILICON NPN 2S0637 KT620A KT3102A
Contextual Info: LOW-POWER SILICON NPN Item Number Part Number 10 - 1S - 20 2S 30 2SD601A 2S0637 2SC2000K 2SC2603 2SC147S KT620A HSE4S4 MPS-A09 KT3102A 2N4966 ~~~~~~ JE9214A TEC9014B MPSA09 MPSA09 MPSA09 2SC117S 2SC876 2SC876 ~~~~~ 2S01490 250789 BFT31 2NS310 TE01402A BFX68

BFT31

Contextual Info: BFT31 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO18 Metal Package. 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) Bipolar NPN Device. VCEO = 50V 0.48 (0.019) 0.41 (0.016) dia. IC = 1A All Semelab hermetically sealed products

Contextual Info: SILICON EPITAXIAL NPN TRANSISTOR BFT29 / BFT30 / BFT31 • Hermetic TO-18 Metal Package • Designed For General Purpose Amplifiers, and Audio Driver Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS TA = 25°C unless otherwise stated

Contextual Info: BFT31 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO18 Metal Package. 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) Bipolar NPN Device. VCEO = 50V 0.48 (0.019) 0.41 (0.016) dia. IC = 1A All Semelab hermetically sealed products

BFT29

Abstract: BFT30 BFT31 LE17
Contextual Info: SILICON EPITAXIAL NPN TRANSISTOR BFT29 / BFT30 / BFT31 • Hermetic TO-18 Metal Package • Designed For General Purpose Amplifiers, and Audio Driver Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS TA = 25°C unless otherwise stated

BFT31

Contextual Info: BFT31 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO18 Metal Package. 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) Bipolar NPN Device. VCEO = 50V 0.48 (0.019) 0.41 (0.016) dia. IC = 1A All Semelab hermetically sealed products

2N4260

Abstract: 2N3829 BFT29 BFT30 BFT31 BFT39 BFT40 BFT41 BFT53 BFY50
Contextual Info: s[^pT e x a s Discrete Semiconductors In s tru m e n ts Polarity High Current NPN Amplifiers Device Type Case Maximum ratings BV BV BV CBO CEO EBO ICM mA V V V hFE1 hFE2 1C fT 1C mA min. min. max. MHz max. mA 250 250 300 1000 1000 1000 20 25 25 — 1000 1000

F13S

Abstract: BFQ35 BC177 pnp transistor transistor bc303 transistor t05 BF179 2n3440 equivalent bc304 equivalent bc143 equivalent 2N3570
Contextual Info: Metal Can 0-76 Case BV CBO V V V 30 25 25 15 15 13 3 3 3 0 -4 8 0 2N3570 2N3571 2N3572 *Tt i 4-95JÍ -12-7 h min I—-5 -3 Dimensions in mm NPN NPN NPN T072 T072 T072 Maximum ratin as BV BV CEO EBO hFE1 • mA min. max. f 50 50 50 5 5 5 150 200 300 1000 450

BC107 equivalent transistors

Abstract: EQUIVALENT TRANSISTOR bc108 bc109 equivalent transistor t05 bc108 equivalent BC107 equivalent equivalent transistor bc107 2N2484 equivalent transistors equivalent of transistor bc108 BC177 equivalent
Contextual Info: Metal Can Metal Can Product Variations Low Level General Purpose Amplifiers TO-5, TO-39 and TO-18 can be supplied with several variations from standard. Device Type Lead Length The standard lead length is 12,7mm 0,5in . Certain types are available with longer leads— 38,1mm (1,5in) at a small extra

bcx40

Contextual Info: Medium Power Amplifiers and Switches TYPE POLA­ CASE NO. RITY BCW97 BCX25 BCX26 BCX40 BCX45 BCX46 BCX47 BCX48 BCX49 BCX50 BCX60 BCX73 BCX74 BCX75 BCX76 BFR10 BFR11 BFR18 BFR19 BFR20 BFR21 BFR22 BFR23 BFR24 BFR41 BFR77 BFR79 BFS92 BFS93 BFS94 BFS95 BFT29 BFT30

BCX60

Abstract: BD370B BD370C BD370 BD371C bfr41 BFS94 BFW32 BD371B BFR18
Contextual Info: Medium Power Amplifiers and Switches M A X IM U M R A T IN G S > TYPE NO. X < -I o a. V C E S A T h fe CASE Pd (mW) 1 C (A ) V C EO (V ) min max 400 400 250 'c (mA) V CE (V ) 10 10 500 100 100 max fT min Cob C O M PLE­ max M EN TA RY (MHz) (pF) TYPE (V )

BF177

Abstract: BC312 BF178 BF179 2N4260 BC142 2N3576 BFT39 2N3829 BF338
Contextual Info: 7 Metal Can High Current NPN Amplifiers Case Outlines Maximum ratinas Device Type BFT39 BFT40 BFT41 BFY50 BFY51 BFY52 ¡5 o £L NPN NPN NPN NPN NPN NPN BV BV BV Case CBO CEO EBO ICM mA V V V T039 T039 T039 T039 T039 T039 90 70 60 80 60 40 80 60 50 35 30 20

NPN pnp MATCHED PAIRS 2n2905A 2N2219A

Abstract: BFR39 BFR80 BFR40 BS9300 BFR81 BC326 BFR79 TIS90 BFR62
Contextual Info: Silect Polarity General Purpose Transistors — Ic up to 800 mA Case Outlines Device Type case outline in brackets 2N3702 2N3703 2N3704 2N3705 2N3706 (1) (1) (1) (1) (1) TIS90 (1) TIS91 (1) PTOT Maximum ratings CEO V Cont IC A pk IC A Free Air @ 25‘C mW

BFR80

Abstract: BFR79 BFR81 BFT69 BFW32 700M BFQ37 BFQ38S BFR38 BFR52
Contextual Info: SEHELAB LTD 37E D • 6133157 DQQ0D5Q b « S U L B ~T~ 3 3 -Of , I •i Type No. Option''17 Polarlly Packa9 e v CEO hF E @ VC e / ' c fT PD PNP PNP PNP NPN PNP T039 T039 T072 T092 T092 300 250 35 20 80 0.2 1 20m 1 1 30-300 25min 25min 60min 50min 5 /10m 5 /50m

2N4260

Abstract: 2N3829 BFT29 BFT30 BFT31 BFT39 BFT40 BFT41 BFT53 BFY50
Contextual Info: 7 Metal Can High Current NPN Amplifiers Case Outlines Maximum ratinas Device Type BFT39 BFT40 BFT41 BFY50 BFY51 BFY52 ¡5 o £L NPN NPN NPN NPN NPN NPN BV BV BV Case CBO CEO EBO ICM mA V V V T039 T039 T039 T039 T039 T039 90 70 60 80 60 40 80 60 50 35 30 20

2N3053 equivalent

Abstract: f012 transistor t05 BC107 pnp equivalent 2n4036 equivalent BS9365 F112 BS9365F112 BC177 equivalent bc108 equivalent BS93G5
Contextual Info: BS9000 Small Signal Transistors Absolute Maximum Rating 8 S Type Number 6 S 9360 F001 BS9360 F001 BS9360 F001 BS9360 F002 BS9360 F002 BS9360 F002 B S9360 F003 B S9360 F003 B S9360 F003 BS9360 F004 BS9360 F004 BS9360 F004 BS9360 F005 BS9360 F005 BS9360 F005

2sd 5023

Abstract: transistor BC 945 2SC 9012 bc 9013 transistor bc 855 9416A Transistor BC345 BFY41 bcx 388 BC 945
Contextual Info: SEMICONDUCTORS INC OTE D | fil3t.t,5Q □D0Q2C12 7 | T TYPE NO. POLARITY Medium Power Transistors MAXIMUM RATINGS CASE Pd mW HFE •c (A) VCEO IV) min 40 35 40 40 40 VCE(SAT) max ■c (A) (VÏ COMPLE­ MENTARY TYPE *T min (MHz) Cob max (pF) 0.15 1 0.3 1

C495 transistor

Abstract: transistor c495 C735 c495 bc300 equivalent NPN C460 BFY50 equivalent u c756 2n-2411 2n1613 equivalent
Contextual Info: 7 Metal Can High Current NPN Am plifiers Case Outlines Maximum ratinas Device Type ¡5 o £L BV Case BV BV hFEI CBO CEO EBO ICM mA V V V hFE2 1C Ic mA min. max. mA BFT39 BFT40 BFT41 NPN NPN NPN T039 T039 T039 90 70 60 80 60 50 5 5 5 1000 1000 1000 100 50 100 75

2SA532

Abstract: BC109 BC184 BC549 BC317 2SC734 Y MS181A BC159 8 2SC876 TTP31A ML78M06A BC357
Contextual Info: ALPHANUMERIC INDEX TYPE NO. 057-2G 1611G 1620G 1621-2G 1623G 1641G 1N4001 1N4002 1N40Û3 1N4004 1N4005 1N4006 1N4007 1N5391 1N5392 1N5393 1N5394 1N5395 1N5396 1N5397 1N5398 1N5399 1N5400 1N5401 IN5402 1N5403 1N5404 1N5405 1N5406 1N5407 1N5408 2021-1G 2023G

CV7756

Abstract: bc300 equivalent BFY50 equivalent 2N2222 npn small signal current gain BC142 equivalent CV7765 bfy51 equivalent CV7735 cv7766 2n1613 equivalent
Contextual Info: Discrete Semiconductors T e x a s In s t r u m e n t s Absolute Maximum Rating h F E at Collector Current CV Number Commercial Case Equivalent Outline Polarity V C B VCE V V V e b hFE hFE Ic Min. fT MHz Converted to B S 9 3 0 0 Small Signal Planar CV continued

2sd 5023

Abstract: bc 9013 bc 9013 g 2SC 9012 2218A cs9012 BC526 transistor BC 945 BC287 Transistor BC345
Contextual Info: SEMICONDUCTORS INC OTE D | fil3t.t,5Q □D0Q2C12 7 | T TYPE NO. POLARITY Medium Power Transistors MAXIMUM RATINGS CASE Pd mW HFE ic (A) VCEO IV) min max 40 35 40 40 40 120 VCE(SAT) max (A) (Vï COMPLE­ MENTARY TYPE *T min (MHz) Cob max (pF) 0.15 1 0.3 1

sx3704

Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
Contextual Info: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide

BCW93

Abstract: BD370 BCW78 BCW79 BCW80 BCW90 BCW91 BCW92 BCW94 BCW95
Contextual Info: Medium Power Amplifiers and Switches TYPE NO. POLA­ RITY CASE MAXIMUM RATINGS HFE Pd IC VCEO mW (A) (V) min max IC (mA) VCE (V) VCE(sat) max (V) (A) IT min (MHz) 1 1 1 2 2 0.7 0.7 0.7 0.25 0.25 0.5 0.5 0.5 0.15 0.15 100 100 100 100+ 100+ 12 18 18 15 15

TIS43

Abstract: equivalent of transistor bc214 BF257 Texas equivalent of transistor bc212 bc 214 2N696 TEXAS INSTRUMENTS Q2T2222 TIS70 BFR40 kd 2060 transistor BF195 equivalent
Contextual Info: The Transistor and Diode Data Book for Design Engineers Volume II Northern European Edition IMPORTANT NOTICES Texas Instrum ents Ltd ., reserves the rig h t to make changes at any tim e in order to improve design and to supply the best p ro d u c t possible.