BFR280 Search Results

Contextual Info: Tem ic BFR280T S e m i c o n d u c t o r s Silicon NPN Planar RF Transistor E le c tro s ta tic se n s itiv e d ev ice. O b se rv e p re c a u tio n s fo r h a n d lin g . Applications F o r lo w -n o is e a n d h ig h -g a in b ro a d b a n d a m p lifie rs a t c o lle c to r c u rre n ts fro m 0 .2 m A to 8 m A .

Contextual Info: BFR280T/BFR280TW ViSHAY _ ▼ Vishay Telefunken Silicon NPN Planar RF Transistor E lectrostatic sensitive device. O bserve precautions fo r handling. ^ M Applications For low noise and high gain broadband am plifiers at

BFS480

Abstract: F150 SOT23 5 BFR280 BFR280W Siemens rf power transistors F450
Contextual Info: Application Note No. 032 Discrete & RF Semiconductors BFR280, BFR280W and BFS480 in Pager Applications This application note provides additional information to the data sheet for low voltage and low current applications. At frequencies below 500 MHz BFR280 in SOT-23 package, BFR280W in SOT-323 package

Contextual Info: BFR280T / BFR280TW VISHAY Vishay Semiconductors Silicon NPN Planar RF Transistor Features 1 • Low power applications • Low noise figure • High transition frequency 3 2 Applications 1 For low noise and high gain broadband amplifiers at collector currents from 0.2 mA to 8 mA.

Contextual Info: BFR280W NPN Silicon RF Transistor 3
For low noise, low-power amplifiers in mobile communication systems pager, cordless telephone at collector currents from 0.2 mA to 8 m
fT = 7.5 GHz 2 F = 1.5 dB at 900 MHz 1 VSO05561 ESD: Electrostatic discharge sensitive device, observe handling precaution!

96275

Abstract: BFR280W VSO05561
Contextual Info: BFR280W NPN Silicon RF Transistor 3
For low noise, low-power amplifiers in mobile communication systems pager, cordless telephone at collector currents from 0.2 mA to 8 m
fT = 7.5 GHz 2 F = 1.5 dB at 900 MHz 1 VSO05561 ESD: Electrostatic discharge sensitive device, observe handling precaution!

Contextual Info: BFR280T / BFR280TW Vishay Semiconductors Silicon NPN Planar RF Transistor Features • • • • • 1 Low power applications Low noise figure e3 High transition frequency Lead Pb -free component Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC

BFR280T

Contextual Info: BFR280T Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications For low-noise and high-gain broadband amplifiers at collector currents from 0.2 mA to 8 mA. Features D Low power applications D Low noise figure

BFR280T

Contextual Info: BFR280T TELEFUNKEN Semiconductors Silicon NPN Planar RF Transistor Applications For low noise and small signal low power amplifiers. This transistor has superior noise figure and associated gain performance at UHF, VHF, and microwave frequencies. Features

BFR280T

Abstract: BFR280TW
Contextual Info: BFR280T/BFR280TW Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications For low noise and high gain broadband amplifiers at collector currents from 0.2 mA to 8 mA. Features D Low power applications

BFR280T

Abstract: telefunken IC
Contextual Info: BFR280T Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications For low-noise and high-gain broadband amplifiers at collector currents from 0.2 mA to 8 mA. Features D Low power applications D Low noise figure

BFR280T

Abstract: BFR280TW
Contextual Info: BFR280T/BFR280TW Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications For low noise and high gain broadband amplifiers at collector currents from 0.2 mA to 8 mA. Features D Low power applications

Contextual Info: BFR280T/BFR280TW Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications For low noise and high gain broadband amplifiers at collector currents from 0.2 mA to 8 mA. Features D Low power applications

BFR280TW

Abstract: BFR280T
Contextual Info: BFR280T / BFR280TW Vishay Semiconductors Silicon NPN Planar RF Transistor Features • • • • • 1 Low power applications Low noise figure e3 High transition frequency Lead Pb -free component Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC

Contextual Info: BFR280 NPN Silicon RF Transistor 3
For low noise, low-power amplifiers in mobile communications systems pager, cordless telephone at collector currents from 0.2 mA to 8 m
fT = 7.5 GHz 2 F = 1.5 dB at 900 MHz 1 VPS05161 ESD: Electrostatic discharge sensitive device, observe handling precaution!

BFR280

Contextual Info: BFR280 NPN Silicon RF Transistor 3
For low noise, low-power amplifiers in mobile communications systems pager, cordless telephone at collector currents from 0.2 mA to 8 m
fT = 7.5 GHz 2 F = 1.5 dB at 900 MHz 1 VPS05161 ESD: Electrostatic discharge sensitive device, observe handling precaution!

BFR280T

Abstract: BFR280TW
Contextual Info: BFR280T/BFR280TW Vishay Semiconductors Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications For low noise and high gain broadband amplifiers at collector currents from 0.2 mA to 8 mA. Features D Low power applications

S852T

Abstract: BF579 T0-50 BF964S BF96 BFP183T
Contextual Info: Tem ic Semiconduct ors Selector Guide Dual-Gate Si-MOSFETs N-Channel Depletion Mode Number BF961 BF964S BF966S BF988 BF994S BF995 BF996S BF998 S525T S888T VD5 V 20 20 20 12 20 20 20 12 20 10 lümax mA 30 30 30 30 30 30 30 30 30 20 Iy2isl at Ids mA mS 15

s525

Abstract: s918 BF988 bfr96ts S858TA3 BF-970 BFP183T
Contextual Info: Tem ic Semiconductors General Information Alphanumeric Index Type. T ype . Type. Type . BFR90A 9, 243 S593T 8, 105 BFR91 9, 250 S594T 8, 112 9, 163 BFR91A . . . . 9, 256 S595T 8, 119 BFP81 9, 173 BFR92 S822T 9, 338 8. 52

2SC3355 SPICE MODEL

Abstract: transistor C2003 C319B MGF1412 RF TRANSISTOR 10GHZ MRF134 rf model .lib file 2SK571 MGF1402 MRF9331 pb_hp_at41411_19921101
Contextual Info: Vendor Component Libraries RF Transistor Library May 2003 Notice The information contained in this document is subject to change without notice. Agilent Technologies makes no warranty of any kind with regard to this material, including, but not limited to, the implied warranties of merchantability and fitness

siemens spc 2

Abstract: Statistical 800MHZ smd transistor marking cf front of fabrication process smd ic marking HL
Contextual Info: Quality Specification 1 Quality Management Delivering quality means for the subdivision Discrete and RF Semiconductors in accordance with “top with TQM ”. To fulfill or exceed the present and future requirements of our customers. In order to achieve full customer satisfaction HL HF pursues the strategy of continuous

smd code book

Abstract: transistor SMD P1f marking code W16 SMD Transistor TRANSISTOR SMD MARKING CODE jg smd transistor WW1 Transistor SMD a7s DIODE SMD L4W smd diode zener code pj 78 smd transistor wv4 Motorola transistor smd marking codes
Contextual Info: The SMD Code Book 1st character of code 0123456789 ABCDEFGHI JKLMNOPQ R STUVWXYZ Bases The SMD Codebook R P Blackwell, GM4PMK To look up a coded device, click on the first character of the device code in the table on the left. A-F G-K L-P Q-V W-Z AQ-FQ GQ-LQ

diode S6 78A

Abstract: TRANSISTOR PNP BA RT SOT 89 mmic CEA SOT363 32N45 transistor 6bw TRANSISTOR BC 545 BF1012S 6bw sot-23 up 6103 s8 6bw 12 transistor
Contextual Info: SIEM EN S Selection Guide RF-Transistors and MMICs MOS Field-Effect Dual-Gate GaAs FETs. 14

TCA780

Abstract: TFK U 111 B TFK U 4614 B TFK S 186 P TFK U 217 B TFK BP w 41 n TFK BPW 41 N Tfk 880 TFK 148 TDSR 5150 G
Contextual Info: Industry Part Number 1N3245 1N3611GP 1N3612GP 1N3613GP 1N3614GP 1N3725 1N3957GP 1N4001GP 1N4002GP 1N4003GP 1N4004GP 1N4005GP 1N4006GP 1N4007GP 1N4245GP 1N4246GP 1N4247GP 1N4248GP 1N4249GP 1N4678.1N4717 1N4728A.1N4761A 1N4933GP 1N4934GP 1N4935GP 1N4936GP