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BF966 Datasheets (20)

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Part	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
BF966	Philips Semiconductors	Silicon N-Channel Dual Gate MOS FET	Original	PDF	70.96KB	3
BF966	Unknown	Cross Reference Datasheet	Scan	PDF	38.45KB	1
BF966	Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)	Short Form	PDF	101.25KB	1
BF966	Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)	Short Form	PDF	105.31KB	1
BF966	Unknown	Shortform Data and Cross References (Misc Datasheets)	Short Form	PDF	42.73KB	1
BF966	Telefunken Electronic	N-Channel Dual Gate MOS Field Effect Tetrode - Depletion Mode	Scan	PDF	609.29KB	10
BF966S	Philips Semiconductors	Silicon N-Channel Dual Gate MOS FET	Original	PDF	160.32KB	5
BF966S	Siemens	Cross Reference Guide 1998	Original	PDF	27.35KB	7
BF966S	Vishay Intertechnology	N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode	Original	PDF	129.87KB	8
BF966S	Vishay Telefunken	TRANS MOSFET N-CH 20V 0.03A 4TO-50	Original	PDF	185.61KB	8
BF966S	Unknown	Shortform Datasheet & Cross References Data	Short Form	PDF	83.98KB	1
BF966S	Unknown	Cross Reference Datasheet	Scan	PDF	38.45KB	1
BF966S	Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)	Short Form	PDF	101.25KB	1
BF966S	Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)	Short Form	PDF	105.31KB	1

BF966S	Unknown	Shortform Data and Cross References (Misc Datasheets)	Short Form	PDF	42.73KB	1
BF966S	Philips Semiconductors	SILICON N-CHANNEL DUAL GATE MOS-FET	Scan	PDF	28.39KB	1
BF966SA	Vishay Intertechnology	N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode	Original	PDF	129.87KB	8
BF966SA	Vishay Telefunken	TRANS MOSFET N-CH 20V 0.03A 4TO-50	Original	PDF	185.61KB	8
BF966SB	Vishay Intertechnology	N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode	Original	PDF	129.87KB	8
BF966SB	Vishay Telefunken	TRANS MOSFET N-CH 20V 0.03A 4TO-50	Original	PDF	185.61KB	8

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BF966 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
S852T Abstract: BF579 T0-50 BF964S BF96 BFP183T Contextual Info: Tem ic Semiconduct ors Selector Guide Dual-Gate Si-MOSFETs N-Channel Depletion Mode Number BF961 BF964S BF966S BF988 BF994S BF995 BF996S BF998 S525T S888T VD5 V 20 20 20 12 20 20 20 12 20 10 lümax mA 30 30 30 30 30 30 30 30 30 20 Iy2isl at Ids mA mS 15	OCR Scan	bf961 bf964s bf966s bf988 +11bf994s bf995 bf996s bf998 s525t s888t s852t bf579 t0-50 bf96 bfp183t	PDF
BF966S Abstract: BF966SA BF966SB Contextual Info: BF966S N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Electrostatic sensitive device. Observe precautions for handling. Applications Input- and mixerstages especially for UHF-tuners. Features D High AGC-range D Low feedback capacitance D Low input capacitance	Original	bf966s d-74025 23-jan-97 bf966sa +1bf966sb	PDF
BF966 Contextual Info: BF966S VISHAY Vishay Semiconductors N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode 3 Features • • • • • • 4 Integrated gate protection diodes High cross modulation performance Low noise figure High AGC-range Low feedback capacitance	Original	bf966s d-74025 20-aug-04 bf966	PDF
TO50 package Abstract: BF966 BF966S Contextual Info: BF966S Vishay Semiconductors N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode 3 Features • • • • • • • • 4 Integrated gate protection diodes High cross modulation performance e3 Low noise figure High AGC-range Low feedback capacitance	Original	bf966s 2002/95/ec 2002/96/ec bf966sa +5bf966sb bf966d d-74025 to50 package bf966	PDF
BF966S Abstract: transistor BG 23 Contextual Info: 7 1 1 DÖ2 b 0 0 1 3 7 5 4 2 b l 3 M PHIN BF966S SILICON N-CHANNEL DUAL GATE MOS-FET Depletion type field-effect transistor in a plastic X-package w ith source and substrate interconnected, intended fo r u.h.f. applications in television tuners and professional communication equipment.	OCR Scan	711002b bf966s 7z80878 0db754fci +1transistor bg 23	PDF
2804SLS2 Abstract: BF966 BF966S BF966SA BF966SB Contextual Info: BF966S Vishay Telefunken N–Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Electrostatic sensitive device. Observe precautions for handling. Applications Input- and mixer stages especially UHF-tuners. Features D Integrated gate protection diodes	Original	bf966s d-74025 20-jan-99 2804sls2 +3bf966 bf966sa bf966sb	PDF
BF966 Abstract: bf966 TRANSISTOR k 246 transistor fet sot103 Contextual Info: N AUER PHILIPS/DISCRETE ObE D • bt.S3T31 O D IS TTE ■ BF966 A SILICON N-CHANNEL DUAL GATE MOS-FET Depletion type field-effeot transistor in a plastic X-package w ith source and substrate Interconnected, intended fo r u.h.f. applications in television tuners and professional communication equipment.	OCR Scan	b53131 bf966 800mhz bf966 transistor +2k 246 transistor fet sot103	PDF
BF966S Abstract: BF966SA BF966SB 0V128 Contextual Info: BF966S Vishay Semiconductors N–Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Electrostatic sensitive device. Observe precautions for handling. Applications Input- and mixer stages especially UHF-tuners. Features D Integrated gate protection diodes	Original	bf966s d-74025 20-jan-99 bf966sa +2bf966sb 0v128	PDF
dual-gate Abstract: BF966S Contextual Info: Philips Semiconductors Short-form product specification Silicon N-channel dual-gate MOS-FET BF966S APPLICATIONS • UHF applications in television tuners and professional communications equipment. DESCRIPTION Depletion type field-eftect transistor in a plastic X-package	OCR Scan	bf966s dual-gate	PDF
dual-gate Contextual Info: Philips Semiconductors Short-form product specification Silicon N-channel dual-gate MOS-FET BF966S APPLICATIONS • UHF applications in television tuners and professional communications equipment. DESCRIPTION Depletion type field-effect transistor in a plastic X-package	OCR Scan	bf966s dual-gate	PDF
Contextual Info: BF966S v m rn r ▼ Vishay Telefunken N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode E lectrostatic sensitive device. O bserve precautions fo r handling. A Applications Input- and m ixer stages especially U H F-tuners. Features • Integrated gate protection diodes	OCR Scan	bf966s 20-jan-99	PDF
Contextual Info: BF966S _ J v _ SILICON N-CHANNEL DUAL GATE MOS-FET Depletion type field-effect transistor in a plastic X-package with source and substrate interconnected, intended fo r u.h.f. applications in television tuners and professional communication equipment.	OCR Scan	bf966s bbs3331 003st36	PDF
BF966 Contextual Info: N ANER PHILIPS/DISCRETE ObE D • ■ bbS3T31 aQ12c17E 0 ■ ■ BF966 T'3 SILICON N-CHANNEL DUAL GATE MOS-FET Depletion type field-effect transistor in a plastic X-package w ith source and substrate interconnected, intended fo r u.h.f. applications in television tuners and professional communication equipment.	OCR Scan	bbs3t31 aq12c bf966	PDF
BF966 Abstract: BF966S BF966SA BF966SB Contextual Info: BF966S N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Electrostatic sensitive device. Observe precautions for handling. Applications Input- and mixerstages especially for UHF-tuners. Features D Integrated gate protection diodes D High cross modulation performance	Original	bf966s d-74025 23-jan-97 bf966 +2bf966sa bf966sb	PDF

BF966S Contextual Info: Tem ic BF966S S e m i c o n d u c t o r s N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Electrostatic sensitive device. Observe precautions for handling. ^ Applications Input- and mixerstages especially for UHF-tuners. Features • Integrated gate protection diodes	OCR Scan	bf966s 23-jan-97	PDF
Contextual Info: BF966S VISHAY Vishay Semiconductors N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode 3 Features • • • • • • 4 Integrated gate protection diodes High cross modulation performance Low noise figure High AGC-range Low feedback capacitance	Original	bf966s d-74025 20-aug-04	PDF
transistor BG 23 Abstract: BF966S Contextual Info: b3E J> m bbSBTSM 007430D b4T « S I C 3 BF966S J NAPC/PHILIPS SEHICOND FOR D E T A ILE D IN FO R M A TIO N SEE THE LATEST ISSUE OF HANDBO OK SC07 OR DATASHEET SILICON N-CHANNEL DUAL GATE MOS-FET Depletion type field-effect transistor in a plastic X-package w ith source and substrate interconnected,	OCR Scan	bf966s transistor bg 23	PDF
BF966 Contextual Info: BF966S VISHAY Vishay Semiconductors N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode 3 Features • • • • • • 4 Integrated gate protection diodes High cross modulation performance Low noise figure High AGC-range Low feedback capacitance	Original	bf966s d-74025 03-sep-04 bf966	PDF
buz90af Abstract: P7NB60FP P4NB80FP P6N60 P5NB60FP 2SK30A buz91a 2SK2645 BUZ100 2SK163 Contextual Info: _ HHTEPTEKC Ten: 495 739-09-95, 644-41-29 TpaH3MCTopw N-FET copTMpoBKa no HanpflweHMro U DS Kofl: 2SK192 2SK212 2SK241 BF960 BF961 BF964 BF966S BF981 BF996 2N3819 2N5457 2SK125 BFR31 J309 J310 2N4416 BF245A BF245B BF245C BF256A BF256B J111 J112 2N4391	OCR Scan	2sk192 2sk212 2sk241 bf960 +16bf961 bf964 bf966s bf981 ot103 bf996 buz90af p7nb60fp p4nb80fp p6n60 p5nb60fp 2sk30a buz91a 2sk2645 buz100 2sk163	PDF
40673 MOSFET Abstract: MFE131 mosfet 3SK77GR 3N159 40673 MPF201 MFE521 3SK77BL 3N200 MOSFET 3SK107F Contextual Info: MOSFET Item Number Part Number Manufacturer V BR OSS M loss Max (A) Po Max (W) ros (on) (Ohms) 9FS Min (S) VGS(th) Max (V) Cln Max (F) tr Max (s) tt Max (s) Toper Max (OC) Package Style N-Channel Dual-Gate T trode, (Cont' d) 5 10 BF964 BF966 BF966 BF966 3SK107E	Original	bf964 bf966 3sk107e 3sk107f +113sk107g bf996s 40673 mosfet mfe131 mosfet 3sk77gr 3n159 40673 mpf201 mfe521 3sk77bl 3n200 mosfet	PDF
CFY19 Abstract: CFY19-18 CFY19-22 BF995 BF963 CFY10 BF961 BF964S BF965 CFY65-14 Contextual Info: Microwave, RF & Tuner Transistors For complete package outlines, refer to pages PO-1 through PO-6 MOS Field Effect Transistors " BF961 BF963 BF964S BF965 BF966S BF988 BF987 Triode V DS V ^DS niA Pt mW 20 20 20 20 20 12 20 30 50 30 30 30 30 30 200 200 200	OCR Scan	e35bos dd45427 bf961 bf995 +11bf963 bf993 bf964s bf994s bf965 bf997 cfy19 cfy19-18 cfy19-22 cfy10 cfy65-14	PDF
BF966S Abstract: BF966SA BF966SB Contextual Info: BF966S Vishay Telefunken N–Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Electrostatic sensitive device. Observe precautions for handling. Applications Input- and mixer stages especially UHF-tuners. Features D Integrated gate protection diodes	Original	bf966s d-74025 20-jan-99 bf966sa +1bf966sb	PDF
BF966S Abstract: BF966 BF966SA BF966SB TO50 package Contextual Info: BF966S Vishay Semiconductors N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode 3 Features • • • • • • • • 4 Integrated gate protection diodes High cross modulation performance e3 Low noise figure High AGC-range Low feedback capacitance	Original	bf966s 2002/95/ec 2002/96/ec 08-apr-05 +4bf966 bf966sa bf966sb to50 package	PDF
BFT97 Abstract: Siemens 1985 BFT65 bfr91a siemens BFQ64P BFT98T BFS55A bf254 BFR96S Contextual Info: S IE M E N S / SPCLt SEMICONDS ' ' ?QC D • fiS 3b 3E Q 0013325 1 ■ RF Transistors Type PNP= P NPN= N Typical Application epitaxial=E planar = PL E, PL Maximum Ratings Vcbo V VcEO (V) ^80 (V) (mA) fe ft (°C) 40 25 4 25 150 Plot (mW) (°C/W) 500 N Uncontrolled TV IF amplifier stages	OCR Scan	bf199 bf240 bf241 bf254 +14bf255 bf414 bf420 bf420l bf421 bf421l bft97 siemens 1985 bft65 bfr91a siemens bfq64p bft98t bfs55a bfr96s	PDF

BF966 Search Results

BF966 Datasheets (20)

BF966 Price and Stock

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BF966 Datasheets Context Search

S852T

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TO50 package

BF966S

2804SLS2

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transistor BG 23

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40673 MOSFET

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