BF966S
Abstract: BF966SA BF966SB
Contextual Info: BF966S N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Electrostatic sensitive device. Observe precautions for handling. Applications Input- and mixerstages especially for UHF-tuners. Features D High AGC-range D Low feedback capacitance D Low input capacitance
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bf966sd-7402523-jan-97bf966sa+1bf966sb
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TO50 package
Abstract: BF966 BF966S
Contextual Info: BF966S Vishay Semiconductors N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode 3 Features • • • • • • • • 4 Integrated gate protection diodes High cross modulation performance e3 Low noise figure High AGC-range Low feedback capacitance
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bf966s2002/95/ec2002/96/ecbf966sa+5bf966sbbf966dd-74025to50 packagebf966
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2804SLS2
Abstract: BF966 BF966S BF966SA BF966SB
Contextual Info: BF966S Vishay Telefunken N–Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Electrostatic sensitive device. Observe precautions for handling. Applications Input- and mixer stages especially UHF-tuners. Features D Integrated gate protection diodes
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bf966sd-7402520-jan-992804sls2+3bf966bf966sabf966sb
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BF966S
Abstract: BF966SA BF966SB 0V128
Contextual Info: BF966S Vishay Semiconductors N–Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Electrostatic sensitive device. Observe precautions for handling. Applications Input- and mixer stages especially UHF-tuners. Features D Integrated gate protection diodes
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bf966sd-7402520-jan-99bf966sa+2bf966sb0v128
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Contextual Info: BF966S v m rn r ▼ Vishay Telefunken N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode E lectrostatic sensitive device. O bserve precautions fo r handling. A Applications Input- and m ixer stages especially U H F-tuners. Features • Integrated gate protection diodes
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OCR Scan
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bf966s20-jan-99 |
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BF966
Abstract: BF966S BF966SA BF966SB
Contextual Info: BF966S N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Electrostatic sensitive device. Observe precautions for handling. Applications Input- and mixerstages especially for UHF-tuners. Features D Integrated gate protection diodes D High cross modulation performance
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bf966sd-7402523-jan-97bf966+2bf966sabf966sb
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BF966SA
Abstract: BF966S BF966 BF966SB TO50 package MA1300
Contextual Info: BF966S Vishay Semiconductors N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode 3 Features • • • • • • 4 Integrated gate protection diodes High cross modulation performance Low noise figure High AGC-range Low feedback capacitance Low input capacitance
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bf966sbf966sabf966sbd-74025+3bf966to50 packagema1300
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BF966S
Contextual Info: Tem ic BF966S S e m i c o n d u c t o r s N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Electrostatic sensitive device. Observe precautions for handling. ^ Applications Input- and mixerstages especially for UHF-tuners. Features • Integrated gate protection diodes
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OCR Scan
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bf966s23-jan-97 |
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BF966S
Abstract: BF966SA BF966SB
Contextual Info: BF966S Vishay Telefunken N–Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Electrostatic sensitive device. Observe precautions for handling. Applications Input- and mixer stages especially UHF-tuners. Features D Integrated gate protection diodes
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Original
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bf966sd-7402520-jan-99bf966sa+1bf966sb
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PDF
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BF966S
Abstract: BF966 BF966SA BF966SB TO50 package
Contextual Info: BF966S Vishay Semiconductors N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode 3 Features • • • • • • • • 4 Integrated gate protection diodes High cross modulation performance e3 Low noise figure High AGC-range Low feedback capacitance
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Original
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bf966s2002/95/ec2002/96/ec08-apr-05+4bf966bf966sabf966sbto50 package
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