AS7C31026LL Search Results
AS7C31026LL Datasheets (7)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| AS7C31026LL-100BC | Alliance Semiconductor | 3.3V 64K x 16 Intelliwatt low power CMOS SRAM | Original | 161.88KB | 10 | ||
| AS7C31026LL-100BI | Alliance Semiconductor | 3.3V 64K x 16 Intelliwatt low power CMOS SRAM | Original | 161.88KB | 10 | ||
| AS7C31026LL-100TI | Alliance Semiconductor | 3.3V 64K x 16 Intelliwatt low power CMOS SRAM | Original | 161.88KB | 10 | ||
| AS7C31026LL-55BI | Alliance Semiconductor | 3.3V 64K x 16 Intelliwatt low power CMOS SRAM | Original | 161.88KB | 10 | ||
| AS7C31026LL-55TI | Alliance Semiconductor | 3.3V 64K x 16 Intelliwatt low power CMOS SRAM | Original | 161.88KB | 10 | ||
| AS7C31026LL-70BC | Alliance Semiconductor | 3.3V 64K x 16 Intelliwatt low power CMOS SRAM | Original | 161.88KB | 10 | ||
| AS7C31026LL-70TI | Alliance Semiconductor | 3.3V 64K x 16 Intelliwatt low power CMOS SRAM | Original | 161.88KB | 10 |
AS7C31026LL Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
|
Contextual Info: Advance information •■ AS7C31026LL II 3.3V 6 4K x 16 Intelliwatt'1' low power CM O S SRAM Features • Optimized design for battery operated portable systems • Intelliwatt active power reduction circuitry • Organization: 65,536 words X 16 bits • 2.7 V to 3.6V operating range |
OCR Scan |
as7c31026ll44-pinas7c31026ll-35tcas7c31026ll-35ti+6 | |
|
Contextual Info: Preliminary information •■ AS7C31026LL A 3.3V 6 4 K x 16 Intelliwatt low power C M O S SRAM Features • • • • • O ptim ized design for battery o perated portable systems Intelliw att™ active p o w e r re d u c tio n circuitry O rganization: 6 5 ,5 3 6 w o rd s x 16 bits |
OCR Scan |
as7c31026ll31026llas7c3102c31026ll-70tc+5 | |
|
Contextual Info: H ig h p e r f o r m a n c e 6 4 K X 16 C M O S SR AM A S7C 31026L L 6 4 K X 16 In telliw att low power CMOS SRAM Advance information • • • • • Optimized design for battery operated portable systems Intelliwatt™ active pow er reduction circuitry |
OCR Scan |
31026ls7c31026ll-55bc31026ll-70bcs7c31026ll-100b+6 | |
|
Contextual Info: Advance information A S 7C 31026LL 3 .3 V 6 4 K x 1 6 Inte I¡watt'” low power C M O S SRAM Features •O p tm ized design fo r battery operated portable s/stan s •E a s/ m en o iy ejqpansbn w ifh CE, O E inputs • ivtelliw ait?“ active pow e r reduction circuitry |
OCR Scan |
31026ll | |
|
Contextual Info: Advance information •■ AS7C181026LL II 1.8V 64Kx 16 Intelliwatt'-' low power C M O S SRAM Features • • • • • O ptim ized design for battery operated portable systems Intelliw att active pow er reduction circuitry O rganization: 6 5 ,5 3 6 w ords X 16 bits |
OCR Scan |
as7c181026lls7c181026ll-35ti181026ll-55tis7c181026ll-70ti+6 | |
ATPA
Abstract: 7130SA100P 24l01 7C263/4-35C 7164S15Y cy9122-25 7133SA35J 7142sa55 7130sa55p cy2149-45c
|
Original |
cy2147-35ccy7c147-35ccy7c147-45ccy91l22-35c+14 | |
1I200
Abstract: 64KX16 C1998
|
OCR Scan |
as7c31026ll64kx1644-pinas7c31026ll-100tc+7 | |
AS7C31024-12TC
Abstract: AS7C1024-15TJC
|
Original |
32-pin7c512ps7c31024-15jias7c31024l-15jc+8 | |
JESD85Contextual Info: Advance information Features • • • • • Optimized design for battery operated portable systems Intelliwatt active power reduction circuitry Organisation: 65,536 words x 16 bits 2.3V to 3.0V operating range JESD 8-5 High speed - 5 5 /7 0 /1 0 0 ns address access time |
OCR Scan |
44-pin48-ballas7c251026ll1-20020-a+1 | |
EPM5128LC
Abstract: IDT CYPRESS CROSS REFERENCE clocks epm5064lc-1 EPM5128LC-1 EPM5064LC EPM5128LC-2 EPM5128GI EPM5128JC-1 8464c 5962-8871309
|
Original |
cy2148-35ccy21l48-35ccy7c168a-35ccy7c168a-25c+15 | |
AS7C1024-15TJC
Abstract: AS7C1024L-20JC AS7C31024-12TC AS7C1024-10JC
|
Original |
32-pin7c512as7c31024-20tcas7c31024l-12tc+8 | |
mn4117405
Abstract: NN5118165 XL93LC46AP NN514265 MS6264L-10PC w24M257 NN514265A w24m257ak-15 HY62256ALP10 mhs p80c51
|
Original |
cp005-1fis89c51z16c02z86e30+16 | |
SRAM 64KX8 5V
Abstract: 128U K SRAM 512*8 SRAM 3.3v 1Mx8 SRAM edo dRAM AS7C40
|
OCR Scan |
as7c164as7c256as7c512as7c513+13 | |
AS4C1M16FS
Abstract: 1Mx16 flash 3.3v 1Mx8 SRAM
|
OCR Scan |
as29f002j4s29f03as29f040as29f080+9 | |
|
|
|||
|
Contextual Info: Advance information •■ AS7C251026LL A 2.5V 6 4K x 16 lntelliwatt,v low power CM O S SRAM Features • • • • • Optimized design for battery operated portable systems Intelliwatt active power reduction circuitry Organization: 65,536 words x 16 bits |
OCR Scan |
as7c251026llas7c251026ll-55tcas7c251026ll-70tcas7c251026ll-100tc+6 | |
|
Contextual Info: AS7C1024 AS7C31024 128Kx8 CMOS SRAM Common I/O family Features • O rganization: 1 3 1 ,0 7 2 w o rd s x 8 bits • H ig h speed - 1 0 / 1 2 / 1 5 / 2 0 ns address access tim e - 3 / 3 / 4 / 5 ns o u tp u t enable access tim e • Low p o w e r c o n su m p tio n available |
OCR Scan |
as7c1024as7c31024128kx8te7c31024-10tjc+6 | |
|
Contextual Info: Il AS7C1024 AS7C1024L AS7C31024 AS7C31024L 128Kx8 CM OS SRAM Common I/O family Features • O rganization: 13 1 ,0 7 2 w o rd s x 8 bits • H igh speed - 1 0 / 1 2 / 1 5 / 2 0 ns address access tim e - 3 / 3 / 4 / 5 ns o u tp u t enable access tim e • Low p o w e r c o n su m p tio n available |
OCR Scan |
as7c1024as7c1024las7c31024as7c31024l+6 | |
|
Contextual Info: $GYDQFHLQIRUPDWLRQ $6&// 9.ð,QWHOOLZDWWORZSRZHU&02665$0 HDWXUHV • Easy memory expansion with CE, OE inputs • LVTTL/LVCMOS-compatible, three-state I/O • JEDEC registered packaging - 44-pin TSOP II package - 48-ball csp 8mm x 6mm BGA |
Original |
44-pin48-ballas7c181026llas7c31026ll+6 | |
|
Contextual Info: 3UHOLPLQDU\#LQIRUPDWLRQ $6:&64359// 6169#97.ð49#,QWHOOLZDWWŒ#ORZ#SRZHU#&026#65$0 HDWXUHV • Easy memory expansion with CE, OE inputs • LVTTL/LVCMOS-compatible, three-state I/O • JEDEC registered packaging - 44-pin TSOP II package - 48-ball csp 8mm x 6mm BGA |
Original |
44-pin48-ballas7c181026llas7c251026ll+6 | |
1120000b
Abstract: AS7C1024-15TJC AS7C1024 AS7C1025 AS7C31024 AS7C1024L-20JC
|
OCR Scan |
10/12/15/20nsas7c3132-pin7c512+12 | |
EPM5128LC
Abstract: EPM5128GC epm5064lc-1 EPM5128LC1 59628867809r 5962-8984106LX EPM5128GI 7C19945DMB EPM5130GC-1 5962-8867812rx
|
Original |
5962-8753903lx5962-8863701lx5962-8867003lx5962-8867809rx+15 | |
|
Contextual Info: Preliminary information •■ AS7C181026LL A 1.8V 6 4K x 16 lntelliwatt,v low power CM O S SRAM Features • • • • • • • • • Optimized design for battery operated portable systems Intelliwatt active power reduction circuitry Organization: 65,536 words x 16 bits |
OCR Scan |
as7c181026ll44-pin48-ballas7c181026ll-55ti+6 | |
CQM1-ID212Contextual Info: 3UHOLPLQDU\LQIRUPDWLRQ $6&// 9.ð,QWHOOLZDWWORZSRZHU&02665$0 HDWXUHV • JEDEC registered packaging - 44-pin TSOP II package - 48-ball csp 8mm x 6mm BGA • Center power and ground pins for low noise • ESD protection ≥ 2000 volts |
Original |
44-pin48-ballas7c251026llas7c31026ll+7 | |
|
Contextual Info: $6& $6&/ $6& $6&/ .ð&02665$0 &RPPRQ,2 IDPLO\ HDWXUHV • TTL/LVTTL-compatible, three-state I/O • 32-pin JEDEC standard packages - 300 mil PDIP and SOJ Socket compatible with 7C512 64Kx8) - 400 mil SOJ - 8mm × 20mm TSOP |
Original |
32-pin7c512max7c1024l-20tcas7c31024-12tc+6 | |