AS7C181026LL Search Results

Contextual Info: Advance information •■ AS7C181026LL II 1.8V 64Kx 16 Intelliwatt'-' low power C M O S SRAM Features • • • • • O ptim ized design for battery operated portable systems Intelliw att active pow er reduction circuitry O rganization: 6 5 ,5 3 6 w ords X 16 bits

64KX16

Contextual Info: High p e rfo rm a n c e 6 4 K x 16 CMOS SRAM » II AS7C181026LL A Features • O ptim ized design for battery operated portable system s • Intelliw att active p o w er reduction circuitry • O rganization: 65 ,5 3 6 w ords X 16 bits • 1.65V to 1.95V operating range JESD 8-7

Contextual Info: Preliminary information •■ AS7C181026LL A 1.8V 6 4K x 16 lntelliwatt,v low power CM O S SRAM Features • • • • • • • • • Optimized design for battery operated portable systems Intelliwatt active power reduction circuitry Organization: 65,536 words x 16 bits

Contextual Info: H ig h p e r f o r m a n c e 6 4 K X 16 C M O S SR AM A S7C 31026L L 6 4 K X 16 In telliw att low power CMOS SRAM Advance information • • • • • Optimized design for battery operated portable systems Intelliwatt™ active pow er reduction circuitry

Contextual Info: Advance information A S 7C 31026LL 3 .3 V 6 4 K x 1 6 Inte I¡watt'” low power C M O S SRAM Features •O p tm ized design fo r battery operated portable s/stan s •E a s/ m en o iy ejqpansbn w ifh CE, O E inputs • ivtelliw ait?“ active pow e r reduction circuitry

Contextual Info: Advance information •■ AS7C31026LL II 3.3V 6 4K x 16 Intelliwatt'1' low power CM O S SRAM Features • Optimized design for battery operated portable systems • Intelliwatt active power reduction circuitry • Organization: 65,536 words X 16 bits • 2.7 V to 3.6V operating range

1I200

Abstract: 64KX16 C1998
Contextual Info: H ig h p e r f o r m a n c e 64K X 16 C M O S SR A M A S 7 C 3 1026L L A Features • Optimized design for battery operated portable systems • Intelliwatt active power reduction circuitry • Organization: 65,536 words x 16 bits • 2.7V to 3.6V operating range

Contextual Info: Preliminary information •■ AS7C31026LL A 3.3V 6 4 K x 16 Intelliwatt low power C M O S SRAM Features • • • • • O ptim ized design for battery o perated portable systems Intelliw att™ active p o w e r re d u c tio n circuitry O rganization: 6 5 ,5 3 6 w o rd s x 16 bits

Contextual Info: H i gh p e r f o r m a n c e » 6 4 K x 16 II AS 7 C18 10 26 LL CMOS SRAM A 6 4 K x l 6 In telliw att1'• low power CMOS SRAM Advance information • O p tim iz e d d e s ig n fo r b a tte r y o p e r a te d p o r ta b le s y ste m s • E a sy m e m o r y e x p a n s i o n w i t h CE, O E in p u t s

WZ-250

Abstract: TL2002
Contextual Info: F ra n ce information Features • • • • • O ptim ized design for battery o perated portable systems Intelliw att active p o w er red u ctio n circuitry O rganization: 6 5 ,5 3 6 w o rd s x ] 6 bits 1.65V to 1.95V operating range JESD 8 -7 H igh speed

SRAM 64KX8 5V

Contextual Info: A Product Guide "641 Ali densities is bits TÎÎT 256K- —I.8V /2.S V /3.3V — 64KX16 ! -3.3V 32ÏX 8 asynchronous asynchronous in x: 8Kx8 I 32KX8 64KX8 32KX16 128KX8 I j!28gxl6| 64KX16 64KX8 128KX8 64KXJ6 32XX16 -3.3V 32KX32 synchronous Memories- -ED O

AS4C1M16FS

Abstract: 1Mx16 flash 3.3v 1Mx8 SRAM
Contextual Info: Product number AS29F002 256Kx8 5V boot sector Flash. 433 AS7C181024LL 128Kx8 1,8V Intelliwatt SRAM. 129 j4S29F03 0 128KX8 SV equal sector Flash. 423

11-2Q019-A

Contextual Info: Advance information Features • Optimized design for battery operated portable systems • Intelliwatt active power reduction circuitry • Organization: 65,536 words x 16 bits • 2.7V to 3.6V operating range • High speed - 3 5 /5 5 /7 0 /1 0 0 ns address access time

Contextual Info: Advance information •■ AS7C251026LL A 2.5V 6 4K x 16 lntelliwatt,v low power CM O S SRAM Features • • • • • Optimized design for battery operated portable systems Intelliwatt active power reduction circuitry Organization: 65,536 words x 16 bits

Contextual Info: 3UHOLPLQDU\#LQIRUPDWLRQ $6:&64359// 6169#97.ð49#,QWHOOLZDWWŒ#ORZ#SRZHU#&026#65$0 HDWXUHV • Easy memory expansion with CE, OE inputs • LVTTL/LVCMOS-compatible, three-state I/O • JEDEC registered packaging - 44-pin TSOP II package - 48-ball csp 8mm x 6mm BGA

CQM1-ID212

Contextual Info: 3UHOLPLQDU\LQIRUPDWLRQ $6&// 9.ð,QWHOOLZDWWŒORZSRZHU&02665$0 HDWXUHV • JEDEC registered packaging - 44-pin TSOP II package - 48-ball csp 8mm x 6mm BGA • Center power and ground pins for low noise • ESD protection ≥ 2000 volts