AS7C18 Search Results

Contextual Info: Advance information •■ AS7C181026LL II 1.8V 64Kx 16 Intelliwatt'-' low power C M O S SRAM Features • • • • • O ptim ized design for battery operated portable systems Intelliw att active pow er reduction circuitry O rganization: 6 5 ,5 3 6 w ords X 16 bits

Contextual Info: Preliminary information •■ AS7C181024LL A 1,8V 128K x8 Intelliwatt,v low power CMOS SRAM Features • • • • Intelliwatt active power reduction circuitry 1.65V to 1.95V operating range JESD 8-7 Organization: 131,072 w ords x 8 bits High speed

Contextual Info: Advance information •■ AS7C184098LL A 1-8V 2 5 6 K x 16 Intelliwatt'" low power CM O S SRAM Features • O rganization: 2 6 2 ,1 4 4 w o rd s x 16 bits • Intelliw att active p o w e r re d u ctio n circuitry • Sm allest fo o tp rin t packages - 48 ball FBGA

AS4C1M16FS

Abstract: 1Mx16 flash 3.3v 1Mx8 SRAM
Contextual Info: Product number AS29F002 256Kx8 5V boot sector Flash. 433 AS7C181024LL 128Kx8 1,8V Intelliwatt SRAM. 129 j4S29F03 0 128KX8 SV equal sector Flash. 423

Contextual Info: II II High Performance 16Kx4 CMOS SRAM AS7C188 AS7C186 16Kx4 CMOS SRAM Common I/O FEATURES • O rganization: 16,384 w ords x 4 bits • High Speed: • Com pletely static memory. No clocks or timing strobe required. • Equal access and cycle times •

Contextual Info: A Advance information •■ AS7C184096LL 1,8V 512K x8 lntelliwatt,v low power CMOS SRAM Features O rganization: 5 2 4 ,2 8 8 w o rd s x 8 bits Intelliw att active p o w e r circuitry 1.65V to 1.95V op eratin g range 3 5 / 5 5 / 7 0 / 1 0 0 ns address access tim e

64KX16

Contextual Info: High p e rfo rm a n c e 6 4 K x 16 CMOS SRAM » II AS7C181026LL A Features • O ptim ized design for battery operated portable system s • Intelliw att active p o w er reduction circuitry • O rganization: 65 ,5 3 6 w ords X 16 bits • 1.65V to 1.95V operating range JESD 8-7

Contextual Info: Preliminary information •■ AS7C181026LL A 1.8V 6 4K x 16 lntelliwatt,v low power CM O S SRAM Features • • • • • • • • • Optimized design for battery operated portable systems Intelliwatt active power reduction circuitry Organization: 65,536 words x 16 bits

Contextual Info: Advance information •■ AS7C181024LL 1,8V 128K ■8 Intelliwatt " low powei CAAOS SRAM Features • Intelliw att active pow er reduction circuitry • 1.65V to 1.95V operating range JESD 8-7 • O rganization: 131,072 w ords X 8 bits • H igh speed - 3 5 / 5 5 /7 0 / 1 0 0 ns address access tim e

Contextual Info: Advance information Features • Intelliw att active p o w e r red u ction circuitry • Easy m em o r y exp an sion w ith CEI, CE2, OË in p uts • 1.6 5 V to 1.9 5 V op eratin g range 0ESD 8 -7 • TTL/LVTTL-com patible, three-state I /O • JEDEC registered packaging

Contextual Info: A Advance information •■ 7C254096LL 2.5V 512K x8 IntelliwatT low power CMOS SRAM Features • • • • • Organization: 524,288 w ords x 8 bits Intelliwatt active pow er circuitry 2.3V to 3.0V operating range 2 5 /3 5 /5 5 /7 0 /1 0 0 ns address access tim e

Contextual Info: Preliminary information •■ AS7C251024LL A 2.5V 128K X 8 lntelliwatt,v low power CM O S SRAM Features • • • • Intelliwatt active power reduction circuitry 2.3V to 3.0V operating range Organization: 131,072 words x 8 bits High speed - 5 5 * /7 0 /1 0 0 ns address access time

Contextual Info: H ig h p e r f o r m a n c e 6 4 K X 16 C M O S SR AM A S7C 31026L L 6 4 K X 16 In telliw att low power CMOS SRAM Advance information • • • • • Optimized design for battery operated portable systems Intelliwatt™ active pow er reduction circuitry

Contextual Info: $GYDQFHLQIRUPDWLRQ $6&// 9.ð,QWHOOLZDWWŒORZSRZHU&02665$0 HDWXUHV • Smallest footprint packages - 48 ball FBGA - 400 mil 44-pin TSOP II • Center power and ground pins for low noise • ESD protection ≥ 2000 volts • Latch-up current ≥ 200 mA

Contextual Info: Advance information A S 7C 31026LL 3 .3 V 6 4 K x 1 6 Inte I¡watt'” low power C M O S SRAM Features •O p tm ized design fo r battery operated portable s/stan s •E a s/ m en o iy ejqpansbn w ifh CE, O E inputs • ivtelliw ait?“ active pow e r reduction circuitry

Contextual Info: Advance information •■ AS7C31026LL II 3.3V 6 4K x 16 Intelliwatt'1' low power CM O S SRAM Features • Optimized design for battery operated portable systems • Intelliwatt active power reduction circuitry • Organization: 65,536 words X 16 bits • 2.7 V to 3.6V operating range

Contextual Info: Âdvônœ inforrriöHon AS7C 2 5 4 Ö9 BLL 2 ,5 V 2 5 óK xlé Inteiiiwof low power CM OS SRAM Features • • • • • • • • • • Smallest footprint packages - 48 ball FBGA - 400 mil TSOPII • Cfenter power and ground pins for low noise • ESD protection > 2000 volts

ATPA

Abstract: 7130SA100P 24l01 7C263/4-35C 7164S15Y cy9122-25 7133SA35J 7142sa55 7130sa55p cy2149-45c
Contextual Info: Product Line Cross Reference CYPRESS CYPRESS CYPRESS CYPRESS CYPRESS CY2147-35C CY7C147-35C CY7C147-45C CY7C147-35C CY91L22-35C CY7C122-35C CY2147-45C CY2147-35C CY7C148-35C CY7C148-25C+ CY91L22-45C CY93L422AC CY2147-45C CY7C147-45C CY7C148-45C CY7C148-35C

1I200

Abstract: 64KX16 C1998
Contextual Info: H ig h p e r f o r m a n c e 64K X 16 C M O S SR A M A S 7 C 3 1026L L A Features • Optimized design for battery operated portable systems • Intelliwatt active power reduction circuitry • Organization: 65,536 words x 16 bits • 2.7V to 3.6V operating range

Contextual Info: Preliminary information •■ AS7C31026LL A 3.3V 6 4 K x 16 Intelliwatt low power C M O S SRAM Features • • • • • O ptim ized design for battery o perated portable systems Intelliw att™ active p o w e r re d u c tio n circuitry O rganization: 6 5 ,5 3 6 w o rd s x 16 bits

IC ATA 2398

Contextual Info: Advance information •■ A S7C31024LL 3.3V 128K ■8 Intelliwatt " low powei CAAOS SRAM Features • • • • Intelliw att active pow er reduction circuitry 2.7 V to 3.6V operating range O rganization: 131,072 w ords X 8 bits H igh speed - 3 5 / 5 5 / 7 0 / 1 0 0 ns address access tim e

Contextual Info: H i gh p e r f o r m a n c e » 6 4 K x 16 II AS 7 C18 10 26 LL CMOS SRAM A 6 4 K x l 6 In telliw att1'• low power CMOS SRAM Advance information • O p tim iz e d d e s ig n fo r b a tte r y o p e r a te d p o r ta b le s y ste m s • E a sy m e m o r y e x p a n s i o n w i t h CE, O E in p u t s

Zn107

Contextual Info: .Advance information Features • Easy m em ory expansion w ith CE1, CE2, OE inputs • Intelliwatt active pow er reduction circuitry • 2.3V to 3.0V operating range JESD 8 -5 • JEDEC registered packaging - 3 2 -pin TSOP package - 48-ball 8m m x 6m m CSP BGA

JESD85

Contextual Info: Advance information Features • • • • • Optimized design for battery operated portable systems Intelliwatt active power reduction circuitry Organisation: 65,536 words x 16 bits 2.3V to 3.0V operating range JESD 8-5 High speed - 5 5 /7 0 /1 0 0 ns address access time