440MW Search Results
440MW Price and Stock
Rectron Semiconductor FM440M-WSchottky Diodes & Rectifiers 4A 40V Low VF |
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FM440M-W |
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440MW Datasheets Context Search
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atmel 424
Abstract: AT65609EHW AT65609EHW-CI40SV AT65609E MA9264 ATMel 046 MIL-PRF38535 AT65609EHW-CI40MQ AT65609EHW-CI40SR
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440mwmil-prf38535at65609ehwma9264+7 | |
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Contextual Info: Features • Operating Voltage: 5V • Access Time: 40ns • Very Low Power Consumption • • • • • • • • • – Active: 440mW Max – Standby: 10mW (Typ) Wide Temperature Range: -55°C to +125°C 600 Mils Width Package: SB28 TTL Compatible Inputs and Outputs |
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440mwmil-prf38535at65609ehwma9264+1 | |
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Contextual Info: Features • Operating Voltage: 5V • Access Time: 40ns • Very Low Power Consumption – Active: 440mW Max – Standby: 10mW (Typ) • Wide Temperature Range: -55°C to +125°C • 600 Mils Width Package: SB28 • TTL Compatible Inputs and Outputs • Asynchronous |
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440mwmil-prf38535at65609ehwma9264+1 | |
IN148
Abstract: TQFP48 TSA1041IF TSA1041IFT INCM
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tsa104110-bit30-50msps440mw+9 | |
D217
Abstract: D323 TQFP48 TSA1041IF TSA1041IFT in148
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tsa104110-bit50msps440mw+9 | |
TC5116400
Abstract: tc5116400csj 300D1 toshiba RAS-25
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tc5116400csj/cst300mil400csj/ctc5116400+5 | |
TC514258
Abstract: 4256AP 58ab AZ-70
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tc514258ap/aj/az-70tc514258ap/aj/az-80tc514258ap/aj/az-10tc514258ap/aj/az+5 | |
CAWRContextual Info: TOSHIBA MOS MEMORY PRODUCTS T C 5 1 4 2 6 8 A P / A J / A Z - 7 0 , T C 5 1 4 2 6 8 A P / A J / A Z -80 T C 5 1 4 2 6 8 A P / A J / A Z -10 DESCRIPTION The T C 5 1 4 2 6 8 A P / A J / A Z is the n e w g e n e r a t i o n dy n a m i c R A M org a n i z e d 262,144 w o r d s by 4 |
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tc514268ap/aj/az-70tcs14268ap/aj/az-80tc514268ap/aj/az-10cawr | |
NZ70
Abstract: TC511001 TC511001AZ adata a55 diagram 4ao5
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tc511001ap/aj/az-70tg511001ap/aj/flz-80tc511001ap/aj/az-10+8 | |
RLC Filter Design
Abstract: ADS5121 MPA4609 MPA4609IPFBR MPA4609IPFBT OPA2846 TQFP-48 piezoelectric film sensor "Piezoelectric Sensor"
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mpa4609sbos252erlc filter designads5121+6 | |
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Contextual Info: Semiconductor, Inc. TC54 VOLTAGE DETECTOR FEATURES GENERAL DESCRIPTION • The TC54 Series are CMOS voltage detectors, suited especially for battery-powered applications because of their extremely low 1 xA operating current and small surfacemount packaging. Each part is laser trimmed to the desired |
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ot-23a-3ot-89tc54vcfortc54vn+1 | |
AAT4290
Abstract: AAT4291 SC70JW-8
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aat4290/4291aat4290aat4291500ns+1 | |
LS157
Abstract: RA1C MAS 20 RCA 8086 logic diagram fujitsu ten interfacing of memory devices with 8086 DIP-42P-M02 LS08 DIP-42P-M01 interfacing of RAM with 8086
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42-pin44-pin42-leaddip-42p-m01+14 | |
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Contextual Info: PCM1760P/U DF1760P/U Multi-Bit Enhanced Noise Shaping 20-Bit ANALOG-TO-DIGITAL CONVERSION SYSTEM FEATURES DESCRIPTION ● DUAL 20-BIT MONOLITHIC MODULATOR PCM1760 AND MONOLITHIC DECIMATING DIGITAL FILTER (DF1760) ● HIGH PERFORMANCE: THD+N: –92dB typ, –90dB max |
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pcm1760p/udf1760p/u20-bitpcm1760+4 | |
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Contextual Info: •HYUNDAI H Y 5 1 17 8 0 4 B ,H Y 5 1 16 8 0 4 B 2Mx8, Extended Data Out mode DESCRIPTION This family is a 16M bit dynamic RAM organized 2,097,152 x 8-bit configuration with Extended Data Out mode CMOS DRAMs. Extended data out mode is a kind of page mode which is useful for the read operation. The circuit and process |
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HY5116100BContextual Info: HY5116100B Series -HYUNDAI 16Mx 1-bit CMOS DRAM DESCRIPTION The HY5116100B is the new generation and fast dynamic RAM organized 16,777,216 x 1-bit. TheHY5116100B utilizes Hyundai’s C M O S silicon gate process technology as well as advanced circuit techniques to provide wide |
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hy5116100bthehy5116100b1ad41-00-may9s4b750+3 | |
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Contextual Info: •HYUNDAI SEMICONDUCTOR HY5116400 Series 4M X 4-bit CMOS DRAM DESCRIPTION The HY5116400 is the new generation and fast dynamic RAM organized 4,194,304 x 4-bit. The HY5116400 utilizes Hyundai’s C M O S silicon gate process technology as well as advanced circuit techniques to provide wide operating |
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hy51164001ad02-10-apr93hy5116400jchy5116400ljc+2 | |
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Contextual Info: HY5116400A Series •{HYUNDAI 4M X 4-bit CMOS DRAM DESCRIPTION The HY5116400A is the new generation and fast dynamic RAM organized 4,194,304 x 4-bit. The HY5116400A utilizes Hyundai’s CMOS silicon gate process technology as advanced circuit techniques to provide wide operating |
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hy5116400a1ad23-10-may95hy5116400ajhy5116400aslj+2 | |
HY514264Contextual Info: •HYUNDAI HY514264B 256Kx16, Extended Data Out mode DESCRIPTION This family is a 4M bit dynamic RAM organized 262,144 x 16-bit configuration with CMOS DRAMs. The circuit and process design allow this device to achieve high performance and low power dissipation. Optional features are access time 50, 60 |
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hy514264b256kx1616-bit40-pin+3 | |
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Contextual Info: H Y 5 1 1 6 1 O O A •HYUNDAI S e r ie s 16Mx 1-bit CMOS DRAM DESCRIPTION The HY51161 OOA is the new generation and fast dynamic RAM organized 16,777,216 x 1-bit. The HY51161 OOA utilizes Hyundai's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide |
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hy51161hy5116100ato9-10-may94hy5116100a+5 | |
piezoelectric amplifier
Abstract: N 1114c RLC Filter Design
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mpa4609sbos252d90mhz90v/v+5 | |
T02I
Abstract: 26-PIN ZIP20-P-400 514100B
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msm514100bmsm514100bl304-wordmsm514100b/bl+7 | |
GS1572-IBE3
Abstract: sd 4841 p GS1572 sd 4842 cea-861 352M CEA861 HD-SDI serializer 16 bit parallel GO1555 gs1572ibe3
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gs1572259m-c292m/259m-c20-bit+10 | |
car mp3 remote
Abstract: AT83SND2MP3 0011B 7524B AT83SND2CDVX AT83SND2CMP3 CRC16 FAT32 emmc pin mp3 player schematic diagram
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20-bit440mw7524bcar mp3 remote+8 | |