A115M Search Results

Contextual Info: DIGITRON SEMICONDUCTORS A115A-A115M FAST RECOVERY RECTIFIERS MAXIMUM RATINGS for single phase, 60Hz, half-wave resistive or inductive load Parameter Symbol Maximum peak repetitive reverse voltage VRRM (1 ) A115F A115A A115B A115C A115D A115E A115M Units

A115M

Abstract: diode A115m LM390
Contextual Info: A115M Spec Sheets Details Diodes, Transistors, Thyristors, Triacs, Diode Array, Integrat. Page 1 of 2 Enter Your Part # Home Online Store Special Offers: A115M Availability FREE UPS Ground Shipping on Orders above $150.00 Buy A115M at our online store! Diodes

A115B

Abstract: A115C A115D A115M
Contextual Info: 7294621 POWEREX I N C -74 -, l T D 1 D E | 7 E C14LE1 00013L.5 D i - A115B A115C A115D A115E A115M Fast Recovery Rectifier 5.0 Amps 200-600 Volts THE G EN ERA L ELECTRIC A115 IS A 5.0 AMPERE, A XIA L-LEA D ED , FAST REC O V ER Y RECTIFIER. D UAL H EA TSIN K CONSTRUCTION PRO V ID ES

c 337 25

Abstract: SC160D tic 2160 triac V130HE150 General electric SCR C220 ES5449 4533 gem 2n4401 2n3904 2222a 1N21 es5451
Contextual Info: GENERAL ^ E L E C T R I C SEMICONDUCTORS SEMICONDUCTEURS * HALBLEITER CONTENTS SOMMAIRE INHALT I N D E X . 3 I N D E X . 3

JANTX 1N4001

Abstract: 1N4001.4007 A15E A114A a115F A115A GER4007 ln4001 A114C A14P
Contextual Info: FAST R EC O VER Y RECTIFIERS SELECTOR GUIDE 2000 15 0 0 1000 900 600 « 700 !j 600 § 500 s z 400 5 300 § 200 H _l O > fOO 90 80 70 60 50 I 3 6 12 20 25 30 1 0 0 14 0 2 5 0 4 0 0 750 IK A V ERA G E C U R R E N T -A M P E R ES S T A N D A R D RECTIFIERS SELECTOR GUIDE

A14A

Abstract: A14U A14F A14B A115F A115D A115C GE A14A GER4007 A115B
Contextual Info: REC TIFIERS rHE INDUSTRY’S BROADEST LINE OF POWER RECTIFIERS— .250 TO 1500 AMPERES, UP TO 3000 VOLTS • CURRENT/VOLTAGE RATINGS ■ PACKAGING ■ MOUNTING AND COOLING ■ HIGH-SPEED FAST RECOVERY ■ TRANSIENT SELF-PROTECTION ■ GENERAL PURPOSE REC TIFIERS

diode A14A

Abstract: diode A14A surface mount LN5061 A14P Rectifier A14P A14B LN5060 A14F DT230 A14D 1n5060
Contextual Info: R ECTIFIERS rHE INDUSTRY’S BROADEST LINE OF POWER RECTIFIERS— .250 TO 1500 AMPERES, UP TO 3000 VOLTS • CURRENT/VOLTAGE RATINGS ■ PACKAGING ■ MOUNTING AND COOLING ■ HIGH-SPEED FAST RECOVERY ■ TRANSIENT SELF-PROTECTION ■ GENERAL PURPOSE RECTIFIERS

EATON CM20A

Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268
Contextual Info: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid­ ing complete service, fast delivery and in-depth inventory. Our main

TRIAC 97A6

Abstract: S0805BH 13003 TRANSISTOR TO220 equivalent triacs bt 804 600v Triac bt 808 600C Diode SOT-23 marking 15d zener diode 1N PH 48 6Bs smd transistor Z0409MF equivalent BT 808 600C
Contextual Info: Central Semiconductor Corp. Represented iSIGNTBOHICS B y: TORONTO I Regan Road, Unit 13, Bram pton, O ntario L7A 1B8 Tel: 905-846-1100 Fax:905-846-7116 E -m a il: d e s ig n tr< a id ire c t.c o m OTTAW A 21 Pine Bluff Trail, Stittsville, O ntario K2S 1E1

MUR1560 equivalent

Abstract: 1N4004 SMA S1A SOD 88 S1A MARKING CODE SOD 88 1N5189 ss33 sma Diode marking us1j diode 6a10 6TQ035 usd745c equivalent
Contextual Info: MBRD835L Preferred Device SWITCHMODE Power Rectifier DPAK Surface Mount Package This SWITCHMODE power rectifier which uses the Schottky Barrier principle with a proprietary barrier metal, is designed for use as output rectifiers, free wheeling, protection and steering diodes in

1n5822 trr

Abstract: A14F diode FR105 diode MR850 diode A14A BYV27 200 TAP LT2A02 MBR3100 0630 1N4007 sod-123 SES50
Contextual Info: MBRD1035CTL SWITCHMODE Schottky Power Rectifier DPAK Power Surface Mount Package . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay

OZ 9983

Abstract: mbr3045pt transistor 940 629 MOTOROLA 220 Motorola marking code K 652 TO-220 MUR3030 TRANSISTOR BC 456 Diode Marking 1N4007 Motorola 1N2069 A14F diode BYV33-45
Contextual Info: MBRB3030CTL Advance Information SWITCHMODE Power Rectifier . . . using the Schottky Barrier principle with a proprietary barrier metal. These state–of–the–art devices have the following features: http://onsemi.com Features: • Dual Diode Construction —

Diode 1N4007 DO-7 Rectifier Diode

Abstract: FE8D marking BCV BA157* diode MUR160 SMa diode rgp10g MBRD360 cathode top 1n5619 1N2069 mur120 equivalent diode
Contextual Info: MBRM120ET3 Surface Mount Schottky Power Rectifier POWERMITE Power Surface Mount Package The Schottky Powermite employs the Schottky Barrier principle with a barrier metal and epitaxial construction that produces optimal forward voltage drop–reverse current tradeoff. The advanced

amper 1N5061

Abstract: LN5061 A14P Rectifier A14B diode A14A surface mount A14P Amper 1N5060 1n5062 diode A14A surface diode A14B
Contextual Info: FAS T R E C O V E R Y R EC TIFIER S S E LE C T O R GUIDE 2000 1500 1000 900 600 « 700 !j 6 0 0 § 500 s 400 z 5 300 § 200 H _l O > fOO 90 80 70 60 50 I 3 6 12 20 25 30 100 140 2 5 0 4 0 0 750 IK AVERAGE CURRENT-AMPERES S T A N D A R D R EC TIFIER S S E LE C T O R GUIDE

A114B

Abstract: A114D A114M A114C ge a114d ge A114B A114E A14F DT230 A114-B
Contextual Info: R E C T IF IE R S rHE INDUSTRY’S BROADEST LINE OF POWER RECTIFIERS— .250 TO 1500 AMPERES, UP TO 3000 VOLTS • CURRENT/VOLTAGE RATINGS ■ PACKAGING ■ MOUNTING AND COOLING ■ HIGH-SPEED FAST RECOVERY ■ TRANSIENT SELF-PROTECTION ■ GENERAL PURPOSE

IN4247

Abstract: A115B IN4246 in4248 A115D A14A-P A115F A115C GER4007 A14F
Contextual Info: FAST R E C O V E R Y RECTIFIERS S ELEC TO R GUIDE 2000 1500 1000 900 600 « 700 !j 600 § 500 s 400 z 5 300 § 200 H _l O > fOO 90 80 70 60 50 I 3 6 12 20 25 30 100 140 2 5 0 4 0 0 750 IK AVERAGE CURRENT-AMPERES S T A N D A R D RECTIFIERS SELEC TO R GUIDE

A114 Series

Abstract: A114A A114 A114D A114B A114C A114E A114F D0204 A114M
Contextual Info: S IS H A R R A114 Series IS S E M I C O N D U C T O R 1A, 50V-600V Diodes December 1993 Features • Package JE D E C ST YLE DO-204 TOP VIEW G lass Passivated Junction • Fast Recovery Tim es • Low Forward Voltage Drop, High-Current Capability • tow Reverse Current Leakage

A115B

Abstract: A115M A115D ge a115d a115e A115F A115C GER4007 A14F DT230
Contextual Info: R E C T IF IE R S rHE INDUSTRY’S BROADEST LINE OF POWER RECTIFIERS— .250 TO 1500 AMPERES, UP TO 3000 VOLTS • CURRENT/VOLTAGE RATINGS ■ PACKAGING ■ MOUNTING AND COOLING ■ HIGH-SPEED FAST RECOVERY ■ TRANSIENT SELF-PROTECTION ■ GENERAL PURPOSE

diode A14A

Abstract: A14A A14P Rectifier A15A diode A115m diode a15a ge a15a 1N4150 1N4450 1N4606
Contextual Info: SIGNAL DIODES 100 - 200 M A TYPES 200 - 400 M A TYPES Ir @ Part Number BV 1OOü A Min. V 1N4451 40 1N4607 85 @ 25°C Max. <nA) 1 @ Vf Max. V r (V ) (V) @ Ir(mA) Co @ OV (pf) Package T»pe trr (nsec) 50 30 1.00 300 6 10 100 50 1.00 400 4 10 1 Package Outline No.

A114F

Abstract: A114A A114 A114D 431T A114B A114C A114M A114E A114 Series
Contextual Info: HARRIS SEMICOND SECTOR bflE J> & A114 Series H 4308271 13b H H A S 1A, 50V - 600V Diodes December 1993 Package Features • 0050314 JE D E C STYLE D0-204 TOP VIEW Glass Passivated Junction • Fast Recovery Times • Low Forward Voltage Drop, High-Current Capability

A115A

Abstract: A115M A115 A115F diode A115m A115B A115C A115D A115 Series A115-A
Contextual Info: HA RR IS S E M I t O N D S E CT OR bflE D • 43 G22 71 0 0 5 0 31 7 T45 H I H A S A115 Series 33 h ae e sî 3A, 50V - 600V Diodes December 1993 Package Features • Glass Passivated Junction AL-3 TOP VIEW • Fast Recovery Times • Low Forward Voltage Drop, High-Current Capability

stpr16

Abstract: MUR480E 340L-02 PK MUR 460 BV 202 0158 1N541 AK SOT23 STPS2045 SS33 SMB A14F diode
Contextual Info: MURB1620CT Preferred Device SWITCHMODE Power Rectifier D2PAK Power Surface Mount Package Designed for use in switching power supplies, inverters and as free wheeling diodes, these state–of–the–art devices have the following features: • • • •

b2545 transistor

Abstract: TO220 MUR460 BYV43-45 MUR 460 0801 MR756RL MUR420 diode b2535 equivalent transistor B2535 6A10 BL diode diode A14A surface
Contextual Info: MBR2535CT, MBR2545CT MBR2545CT is a Preferred Device SWITCHMODE Power Rectifiers . . . using the Schottky Barrier principle with a platinum barrier metal. These state–of–the–art devices have the following features: • Guardring for Stress Protection

MR2835S equivalent

Abstract: A14F diode 1n5404 diode FE16A MUR860 equivalent MUR1620CT MUR420 diode usd745c equivalent MBRD360 PR1502
Contextual Info: MBR6045PT SWITCHMODE Power Rectifier The SWITCHMODE power rectifier employs the use of the Schottky Barrier principle with a Platinum barrier metal. This state-of-the-art device has the following features: http://onsemi.com • Dual Diode Construction — Terminals 1 and 3 May Be Connected