8X400 Search Results

Mullard

Abstract: CONDENSER terre
Contextual Info: AZ3I FU LL WAVE RECTIFIER Directly-heated power rectifier for A .C . mains-operated equipment. FILAMENT 4.0 1.1 V. A. Va max. Ia max. 2x500 60 Vrms mA Va max. Ia max. 8x400 75 Vrms mA Va max. Ia max. 2x300 100 Vrms mA Vf If OPERATINO CONDITIONS Maximum Capaci­

K4C560838C-TCB

Contextual Info: K4C5608/1638C 256Mb Network-DRAM Network-DRAM Specification Version 0.2 - 1 - REV. 0.2 Jan. 2002 K4C5608/1638C 256Mb Network-DRAM Revision History Version 0.0 Oct. / 5 / 2001 - First Release Version 0.1 (Dec. / 15 / 2001) - The product name is changed to Network-DRAM

Contextual Info: K4C89093AF Target 288Mb Network-DRAM-II Specification Version 0.2 - 1 - REV. 0.2 Aug. 2003 K4C89093AF Target Revision History Version 0.0 Nov. 2002 - First Release Version 0.1 (Apr. 2003) - Added 800Mbps(400Mhz) product - Changed operating temperature from Ta to Tc.

Contextual Info: K4C89183AF 288Mb Network-DRAM-II Specification Version 0.11 - 1 - REV. 0.11 Apr. 2003 K4C89183AF Revision History Version 0.0 Oct. 2002 - First Release Version 0.01 (Nov. 2002) - Changed die revision from D-die to F-die - Corrected typo - Corrected DQS to DS and QS(DQS -> DS and QS) in AC timing table and timing diagram.

K4C89183AF

Contextual Info: K4C89183AF Network-DRAM-II Specification Version 0.01 - 1 - REV. 0.01 Nov. 2002 K4C89183AF Revision History Version 0.0 Oct. 2002 - First Release Version 0.01 (Nov. 2002) - Changed die revision from D-die to F-die - Corrected typo - Corrected DQS to DS and QS(DQS -> DS and QS) in AC timing table and timing diagram.

BPW22A

Abstract: cm .02m z5u 1kv pin configuration of BFW10 la4347 B2X84 TDA3653 equivalent TRIAC TAG 9322 HEF40106BP equivalent fx4054 core dsq8
Contextual Info: Contents Page Page New product index Combined index and status codes viii x Mullard approved components BS9000, CECC, and D3007 lists CV list Integrated circuits Section index xliii 1 5 Standard functions LOGIC FAMILIES CMOS HE4000B family specifications CMOS HE4000B family survey

Contextual Info: K4C89093AF Preliminary 288Mb Network-DRAM-II Specification Version 0.4 - 1 - REV. 0.4 Jul. 2004 K4C89093AF Preliminary Revision History Version 0.0 Nov. 2002 - First Release Version 0.1 (Apr. 2003) - Added 800Mbps(400Mhz) product - Changed operating temperature from Ta to Tc.

Contextual Info: K4C5608/1638M 256Mb FCRAM FCRAM Specification Version 0.0 - 1 - REV. 0.0 Oct. 2001 K4C5608/1638M 256Mb FCRAM Revision History Version 0.0 Oct. / 5 / 2001 - First Release Notice : FCRAM is a Trademark of Fujitsu Limited, Japen - 2 - REV. 0.0 Oct. 2001 K4C5608/1638M

400M

Abstract: TC59LM806CFT TC59LM814CFT
Contextual Info: TC59LM814/06CFT-50,-60 東芝 MOS 形デジタル集積回路 シリコンモノリシック シリコンゲート CMOS 256M ビット ネットワーク FCRAM1 − 4,194,304 ワード x 4 バンク ×16 ビット − 8,388,608 ワード × 4 バンク ×8 ビット

Contextual Info: K4C89183AF Network-DRAM-II Specification Version 0.01 - 1 - REV. 0.01 Nov. 2002 K4C89183AF Revision History Version 0.0 Oct. 2002 - First Release Version 0.01 (Nov. 2002) - Changed die revision from D-die to F-die - Corrected typo - Corrected DQS to DS and QS(DQS -> DS and QS) in AC timing table and timing diagram.

Contextual Info: K4C5608/1638C 256Mb Network-DRAM Network-DRAM Specification Version 0.5 - 1 - REV. 0.5 Nov. 2002 K4C5608/1638C 256Mb Network-DRAM Revision History Version 0.0 Oct. / 5 / 2001 - First Release Version 0.1 (Dec. / 15 / 2001) - The product name is changed to Network-DRAM

K4C89183AF

Contextual Info: Preliminary K4C89183AF 288Mb x18 Network-DRAM-II Specification Version 0.5 - 1 - REV. 0.5 Aug. 2004 Preliminary K4C89183AF Revision History Version 0.0 Oct. 2002 - First Release Version 0.01 (Nov. 2002) - Changed die revision from D-die to F-die - Corrected typo

Contextual Info: K4C89363AF Network-DRAM-II Specification Version 0.0 - 1 - REV. 0.0 Nov. 2002 K4C89363AF Revision History Version 0.0 Nov. 2002 - First Release - 2 - REV. 0.0 Nov. 2002 K4C89363AF 2,097,152-WORDS x 4 BANKS x 36-BITS DOUBLE DATA RATE Network-DRAM DESCRIPTION

Contextual Info: K4C89093AF 288Mb Network-DRAM-II Specification Version 0.6 - 1 - REV. 0.6 Jan. 2005 K4C89093AF Revision History Version 0.0 Nov. 2002 - First Release Version 0.1 (Apr. 2003) - Added 800Mbps(400Mhz) product - Changed operating temperature from Ta to Tc. - Changed capacitance of ADDR/CMD/CLK

TC59LM818DMB

Abstract: TC59LM818DMB-33
Contextual Info: TC59LM818DMB-33,-40 暫定資料 東芝 MOS 形デジタル集積回路 シリコンモノリシック シリコンゲート CMOS 288M ビット ネットワーク FCRAM2 − 4,194,304 ワード x 4 バンク ×18 ビット 概要 TC59LM818DMB は CMOS 技術を用いた 301,989,888 のメモリセルを有するダブルデータレートファーストサイク

K4C89363AF

Abstract: A12P
Contextual Info: K4C89363AF Network-DRAM-II Specification Version 0.0 - 1 - REV. 0.0 Nov. 2002 K4C89363AF Revision History Version 0.0 Nov. 2002 - First Release - 2 - REV. 0.0 Nov. 2002 K4C89363AF 2,097,152-WORDS x 4 BANKS x 36-BITS DOUBLE DATA RATE Network-DRAM DESCRIPTION

TC59LM814CTG

Abstract: TC59LM806CTG 400M
Contextual Info: TC59LM814/06CTG-50,-60 東芝 MOS 形デジタル集積回路 シリコンモノリシック シリコンゲート CMOS 256M ビット ネットワーク FCRAM1 − 4,194,304 ワード x 4 バンク ×16 ビット − 8,388,608 ワード × 4 バンク ×8 ビット

K4C560838C-TCD3

Abstract: K4C560838C-TCD4 K4C560838C-TCDA K4C561638C-TCD3 K4C561638C-TCD4 K4C561638C-TCDA
Contextual Info: K4C5608/1638C 256Mb Network-DRAM Network-DRAM Specification Version 0.4 - 1 - REV. 0.4 May. 2002 K4C5608/1638C 256Mb Network-DRAM Revision History Version 0.0 Oct. / 5 / 2001 - First Release Version 0.1 (Dec. / 15 / 2001) - The product name is changed to Network-DRAM

K4C89093AF

Contextual Info: K4C89093AF Target 288Mb Network-DRAM-II Specification Version 0.3 - 1 - REV. 0.3 Oct. 2003 K4C89093AF Target Revision History Version 0.0 Nov. 2002 - First Release Version 0.1 (Apr. 2003) - Added 800Mbps(400Mhz) product - Changed operating temperature from Ta to Tc.

K4C89093AF

Contextual Info: K4C89093AF Network-DRAM-II Specification Version 0.11 - 1 - REV. 0.11 Apr. 2003 K4C89093AF Revision History Version 0.0 Nov. 2002 - First Release Version 0.1 (Apr. 2003) - Added 800Mbps(400Mhz) product - Changed operating temperature from Ta to Tc. - Changed capacitance of ADDR/CMD/CLK

TC59LM836DKB

Abstract: TC59LM836DKB-33
Contextual Info: TC59LM836DKB-33,-40 暫定資料 東芝 MOS 形デジタル集積回路 シリコンモノリシック シリコンゲート CMOS 288M ビット ネットワーク FCRAM2 − 2,097,152 ワード x 4 バンク ×36 ビット 概要 TC59LM836DKB はCMOS 技術を用いた 301,989,888 のメモリセルを有するダブルデータレートファーストサイク

rda 410

Contextual Info: K4C89363AF Preliminary 288Mb x36 Network-DRAM2 Specification Version 0.5 - 1 - REV. 0.5 Aug. 2004 K4C89363AF Preliminary Revision History Version 0.0 Nov. 2002 - First Release Version 0.1 (Jan. 2003) - Added JTAG - Corrected # of row/column addresses. - Corrected pin assignment in page 4.

Contextual Info: K4C89363AF Preliminary 288Mb x36 Network-DRAM2 Specification Version 0.7 - 1 - REV. 0.7 Jan. 2005 K4C89363AF Preliminary Revision History Version 0.0 Nov. 2002 - First Release Version 0.1 (Jan. 2003) - Added JTAG - Corrected # of row/column addresses. - Corrected pin assignment in page 4.

Contextual Info: K4C89093AF Preliminary 288Mb Network-DRAM-II Specification Version 0.41 - 1 - REV. 0.41 Aug. 2004 K4C89093AF Preliminary Revision History Version 0.0 Nov. 2002 - First Release Version 0.1 (Apr. 2003) - Added 800Mbps(400Mhz) product - Changed operating temperature from Ta to Tc.