533MBPS Search Results

DDR2-400

Abstract: DDR2-533 DDR2-667 EDE5116AFSE EDE5116AFSE-4A-E EDE5116AFSE-5C-E EDE5116AFSE-6E-E
Contextual Info: DATA SHEET 512M bits DDR2 SDRAM EDE5116AFSE 32M words x 16 bits Features • Density: 512M bits • Organization  8M words × 16 bits × 4 banks • Package: 84-ball FBGA  Lead-free (RoHS compliant) • Power supply: VDD, VDDQ = 1.8V ± 0.1V • Data rate: 667Mbps/533Mbps/400Mbps (max.)

bt 109

Contextual Info: DATA SHEET 512M bits DDR2 SDRAM EDE5108AGBG 64M words x 8 bits Features • Density: 512M bits • Organization  16M words × 8 bits × 4 banks • Package: 60-ball FBGA  Lead-free (RoHS compliant) • Power supply: VDD, VDDQ = 1.8V ± 0.1V • Data rate: 667Mbps/533Mbps (max.)

Contextual Info: iPEM 2.4 Gb SDRAM-DDR2 AS4DDR232M72PBG 32Mx72 DDR2 SDRAM iNTEGRATED Plastic Encapsulated Microcircuit FEATURES BENEFITS DDR2 Data rate = 667, 533, 400 Available in Industrial, Enhanced and Military Temp Package: • 255 Plastic Ball Grid Array PBGA , 25 x 32mm

K8D3216UBC-pi07

Abstract: K5E5658HCM KAD070J00M KBH10PD00M K5D1257ACM-D090000 samsung ddr2 ram MTBF KBB05A500A K801716UBC k5d1g13acm k5a3281ctm
Contextual Info: Product Selection Guide Memory and Storage April 2005 MEMORY AND STORAGE SECTION A DRAM DDR2 SDRAM DDR SDRAM SDRAM RDRAM NETWORK DRAM MOBILE SDRAM GRAPHICS DDR SDRAM DRAM ORDERING INFORMATION FLASH NAND, OneNAND, NOR FLASH NAND FLASH ORDERING INFORMATION SRAM

TC58NVG2D4BFT00

Abstract: TH58NVG3D4BFT00 SSTL-18 TMP86FS49FG H5401 TH58NVG*D TC58DVG14B1FT00 SSTL18 th58nvg TMP86FS49UG
Contextual Info: C O N T E N T S INFORMATION 東芝半導体情報誌アイ 2004年5月号 5 VOLUME 142 四日市工場で最先端の NAND型フラッシュメモリ製造棟の建設を開始 .4 今月の新製品情報 4ギガビットNAND型フラッシュメモリ .2

DDR2-400

Abstract: DDR2-533 DDR2-667 EBE20RE4ABFA EBE20RE4ABFA-4A-E EBE20RE4ABFA-5C-E EBE20RE4ABFA-6E-E CS 3820
Contextual Info: PRELIMINARY DATA SHEET 2GB Registered DDR2 SDRAM DIMM EBE20RE4ABFA 256M words x 72 bits, 1 Rank Specifications Features • Density: 2GB • Organization  256M words × 72 bits, 1 rank • Mounting 18 pieces of 1G bits DDR2 SDRAM sealed in FBGA • Package: 240-pin socket type dual in line memory

EBE10AD4AGFA-6E-E

Abstract: DDR2-400 DDR2-533 DDR2-667 EBE10AD4AGFA EBE10AD4AGFA-4A-E EBE10AD4AGFA-5C-E E0865E11
Contextual Info: PRELIMINARY DATA SHEET 1GB Registered DDR2 SDRAM DIMM EBE10AD4AGFA 128M words x 72 bits, 1 Rank Specifications Features • Density: 1GB • Organization  128M words × 72 bits, 1 rank • Mounting 18 pieces of 512M bits DDR2 SDRAM sealed in FBGA • Package: 240-pin socket type dual in line memory

OSC4/SM

Abstract: MDLS-20265 OPTREX C-51505 MDLS-24265 short stop 12v p18 30a rs232 converter dmx Mosfet J49 LCM-S01602 lcm-s02402 Vishay SOT23 MARKING F5
Contextual Info: LatticeXP2 Advanced Evaluation Board User’s Guide January 2009 Revision: EB30_01.3 LatticeXP2 Advanced Evaluation Board User’s Guide Lattice Semiconductor Introduction The LatticeXP2 Advanced Evaluation Board provides a convenient platform to evaluate, test and debug user

Implementation of digital clock using flip flops

Abstract: ffts used in software defined radio Lattice Semiconductor Package Diagrams 256-Ball fpBGA
Contextual Info: Expanding Applications For Low Cost FPGAs A Lattice Semiconductor White Paper April 2007 Revised August 2007 Lattice Semiconductor 5555 Northeast Moore Ct. Hillsboro, Oregon 97124 USA Telephone: 503 268-8000 www.latticesemi.com 1 Expanding Applications For Low Cost FPGAs

DDR2-400

Abstract: DDR2-533 EBE25RC8AAFA-4C-E EBE25RC8AAFA-5C-E
Contextual Info: PRELIMINARY DATA SHEET 256MB Registered DDR2 SDRAM DIMM EBE25RC8AAFA 32M words x 72 bits, 1 Rank Description Features The EBE25RC8AAFA is a 32M words × 72 bits, 1 rank DDR2 SDRAM Module, mounting 9 pieces of DDR2 SDRAM sealed in FBGA (µBGA) package. Read and

DDR2-533

Abstract: EBE10RD4ABFA-4A-E EBE10RD4ABFA-4C-E EBE10RD4ABFA-5C-E DDR2-400
Contextual Info: PRELIMINARY DATA SHEET 1GB Registered DDR2 SDRAM DIMM EBE10RD4ABFA 128M words x 72 bits, 1 Rank Description Features The EBE10RD4ABFA is a 128M words × 72 bits, 1 rank DDR2 SDRAM Module, mounting 18 pieces of DDR2 SDRAM sealed in FBGA (µBGA) package.

DDR2-533

Abstract: EBE20RE4AAFA-4A-E EBE20RE4AAFA-5C-E DDR2-400
Contextual Info: PRELIMINARY DATA SHEET 2GB Registered DDR2 SDRAM DIMM EBE20RE4AAFA 256M words x 72 bits, 1 Rank Description Features The EBE20RE4AAFA is a 256M words × 72 bits, 1 rank DDR2 SDRAM Module, mounting 18 pieces of DDR2 SDRAM sealed in FBGA (µBGA) package.

DDR2-400

Abstract: DDR2-533 EBE51UD8ABFA EBE51UD8ABFA-4A EDE5108ABSE
Contextual Info: PRELIMINARY DATA SHEET 512MB Unbuffered DDR2 SDRAM DIMM EBE51UD8ABFA 64M words x 64 bits, 1 Rank Description Features The EBE51UD8ABFA is 64M words × 64 bits, 1 rank DDR2 SDRAM unbuffered module, mounting 8 pieces of 512M bits DDR2 SDRAM sealed in FBGA (µBGA)

DDR2-400

Abstract: DDR2-533 EBE11ED8AEFA-4A-E EBE11ED8AEFA-5C-E
Contextual Info: PRELIMINARY DATA SHEET 1GB Unbuffered DDR2 SDRAM DIMM EBE11ED8AEFA 128M words x 72 bits, 2 Ranks Description Features The EBE11ED8AEFA is 128M words × 72 bits, 2 ranks DDR2 SDRAM unbuffered module, mounting 18 pieces of 512M bits DDR2 SDRAM sealed in FBGA (µBGA)

DDR2-400

Abstract: DDR2-533 DDR2-667 EBE51ED8AGFA EBE51ED8AGFA-4A-E EBE51ED8AGFA-5C-E EBE51ED8AGFA-6E-E EDE5108AGSE-6E-E
Contextual Info: DATA SHEET 512MB Unbuffered DDR2 SDRAM DIMM EBE51ED8AGFA 64M words x 72 bits, 1 Rank Description Features The EBE51ED8AGFA is 64M words × 72 bits, 1 rank DDR2 SDRAM unbuffered module, mounting 9 pieces of 512M bits DDR2 SDRAM sealed in FBGA (µBGA)

Contextual Info: i PEM 2.1 G b SDRAM-DDR2 Gb Austin Semiconductor, Inc. AS4DDR232M64PBG 32Mx64 DDR2 SDRAM iNTEGRATED Plastic Encapsulated Microcircuit BENEFITS FEATURES „ „ „ „ „ „ „ „ „ „ „ „ „ „ „ „ „ „ „ DDR2 Data rate = 667, 533, 400 Available in Industrial, Enhanced and Extended Temp

DDR2 pin out

Abstract: SAG 70
Contextual Info: White Paper Stratix II DDR2 System Validation Summary Introduction Today's DDR2 interface solutions need more than just FPGA characterization data to prove functionality. They must demonstrate reliable, robust design in challenging environments. To confront this challenge, Altera carried out a

Contextual Info: DATA SHEET 512MB DDR2 SDRAM SO-DIMM EBE52UD6ABSA 64M words x 64 bits, 2 Ranks Features The EBE52UD6ABSA is 64M words × 64 bits, 2 ranks DDR2 SDRAM Small Outline Dual In-line Memory Module, mounting 8 pieces of 512M bits DDR2 SDRAM sealed in FBGA package. Read and write

EDE5104GBSA

Abstract: EDE5104GBSA-5A-E EDE5108GBSA EDE5116GBSA
Contextual Info: PRELIMINARY DATA SHEET 512M bits DDR-II SDRAM EDE5104GBSA 128M words x 4 bits EDE5108GBSA (64M words × 8 bits) EDE5116GBSA (32M words × 16 bits) Description Features The EDE5104GB is a 512M bits DDR-II SDRAM organized as 33,554,432 words × 4 bits × 4 banks.

Contextual Info: K4C89093AF Target 288Mb Network-DRAM-II Specification Version 0.2 - 1 - REV. 0.2 Aug. 2003 K4C89093AF Target Revision History Version 0.0 Nov. 2002 - First Release Version 0.1 (Apr. 2003) - Added 800Mbps(400Mhz) product - Changed operating temperature from Ta to Tc.

Contextual Info: 512Mb M-die DDR-II SDRAM Target 512Mb M-die DDR-II SDRAM Specification Version 0.11 Rev. 0.11 Apr. 2002 Page 1 of 65 512Mb M-die DDR-II SDRAM Target Contents 1. Key Feature 2. Package Pinout & Addressing 2.1 Package Pintout 2.2 Input/Output Function Description

K4T2G084QA

Abstract: K4T2G084QA-HCD5
Contextual Info: K4T2G044QA K4T2G084QA 2Gb DDR2 SDRAM 2Gb A-die DDR2 SDRAM Specification 68FBGA with Lead-Free and Halogen-Free RoHS compliant INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE

e1007

Abstract: EBE11FD8AHFD-6E-E DDR2-533 DDR2-667
Contextual Info: PRELIMINARY DATA SHEET 1GB Fully Buffered DIMM EBE11FD8AHFD Specifications Features • Density: 1GB • Organization  128M words x 72 bits, 2 ranks • Mounting 18 pieces of 512M bits DDR2 SDRAM sealed in FBGA • Package  240-pin fully buffered, socket type dual in line

EDE5116AHSE

Contextual Info: PRELIMINARY DATA SHEET 512M bits DDR2 SDRAM EDE5108AHSE 64M words x 8 bits EDE5116AHSE (32M words × 16 bits) Specifications Features • Density: 512M bits • Organization ⎯ 16M words × 8 bits × 4 banks (EDE5108AHSE) ⎯ 8M words × 16 bits × 4 banks (EDE5116AHSE)