666MBPS Search Results

Contextual Info: product brief Intel IXF30001 FEC Transponder Product Description Features • ■ ■ ■ Two 16 x 666Mbps differential LVDScompatible line data I/O Two 16 x 622Mbps differential LVDScompatible payload data I/O 16-channel RS 255,239 error protection scheme, including scrambling per G.975

regenerator in optical

Abstract: IXF30001 STM-64 10Gbps Regenerator
Contextual Info: product brief Intel IXF30001 FEC Transponder Product Description Features • ■ ■ ■ Two 16 x 666Mbps differential LVDScompatible line data I/O Two 16 x 622Mbps differential LVDScompatible payload data I/O 16-channel RS 255,239 error protection scheme, including scrambling per G.975

SOP 8 200MIL

Abstract: serial flash 256Mb fast erase spi TM 1628 IC SOP Micron 512MB NOR FLASH HN29V1G91T-30 HN58C1001FPI-15 M5M51008DFP-70HI 256mb EEPROM Memory CSP-48 TSOP 28 SPI memory Package flash
Contextual Info: Renesas Memory General Catalog 2003.11 Renesas Memory General Catalog Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Keep safety first in your circuit designs! 1. Renesas Technology Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with

TC59LM836DKB

Abstract: TC59LM836DKB-33
Contextual Info: TC59LM836DKB-33,-40 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC 288Mbits Network FCRAM2 − 2,097,152-WORDS x 4 BANKS × 36-BITS DESCRIPTION Network FCRAMTM is Double Data Rate Fast Cycle Random Access Memory. TC59LM836DKB is Network

STM-16

Abstract: XRT91L81 XRT91L81IB STM-16 LIU B30 ferrite
Contextual Info: PRELIMINARY XRT91L81 2.488/2.666GBPS OC-48/STM-16 SONET/SDH TRANSCEIVER JANUARY 2004 REV. P1.0.3 GENERAL DESCRIPTION an overflow condition. The operation of the device can be monitored by checking the status of the LOCKDET and LOSDET output signals. An on-chip

qfn-44 PACKAGE footprint

Contextual Info: KIT ATION EVALU E L B AVAILA 19-2215; Rev 6; 10/07 +3.3V, 2.5Gbps/2.7Gbps, SDH/SONET 4:1 Serializer with Clock Synthesis The MAX3892 serializer is ideal for converting 4-bitwide, 622Mbps parallel data to 2.5Gbps serial data in DWDM and SONET/SDH applications. A 4 ✕ 4-bit FIFO

HY5DU281622ET

Abstract: HY5DU281622ET-25 HY5DU281622ET-26 HY5DU281622ET-28 HY5DU281622ET-30 HY5DU281622ET-33 HY5DU281622ET-36 HY5DU281622ET-4 HY5DU281622ET-5
Contextual Info: HY5DU281622ET 128M 8Mx16 GDDR SDRAM HY5DU281622ET This document is a general product description and is subject to change without notice. Hynix Electronics does not assume any responsibility for use of circuits described. No patent licenses are implied. Rev. 0.5 / Jan. 2005

666Hz

Contextual Info: 19-2215; Rev 0; 11/01 +3.3V, 2.5Gbps/2.7Gbps, SDH/SONET 4:1 Serializer with Clock Synthesis Operating from a single 3.3V supply, this device accepts low-voltage differential-signal LVDS clock and data inputs for interfacing with high-speed digital circuitry, and delivers current-mode logic (CML) serial

HY5DU281622ET

Abstract: HY5DU281622ET-25 HY5DU281622ET-26 HY5DU281622ET-28 HY5DU281622ET-30 HY5DU281622ET-33 HY5DU281622ET-36 HY5DU281622ET-4 HY5DU281622ET-5
Contextual Info: HY5DU281622ET 128M 8Mx16 gDDR SDRAM HY5DU281622ET This document is a general product description and is subject to change without notice. Hynix Electronics does not assume any responsibility for use of circuits described. No patent licenses are implied. Rev. 0.5 / Jan. 2005

TC59LM818DMB-33

Abstract: TC59LM818DMB
Contextual Info: TC59LM818DMB-33,-40 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC 288Mbits Network FCRAM2 − 4,194,304-WORDS x 4 BANKS × 18-BITS DESCRIPTION Network FCRAMTM is Double Data Rate Fast Cycle Random Access Memory. TC59LM818DMB is Network

K7D803671B

Abstract: K7D801871B-HC25 K7D801871B-HC30 K7D801871B-HC33 K7D803671B-HC25 K7D803671B-HC30 K7D803671B-HC33
Contextual Info: K7D803671B K7D801871B Preliminary 256Kx36 & 512Kx18 SRAM Document Title 8M DDR SYNCHRONOUS SRAM Revision History Rev No. Rev. 0.0 History -Initial document. Draft Data July. 2000 Remark Advance Rev. 0.1 -ZQ tolerance changed from 10% to 15% Aug. 2000 Advance

Contextual Info: 19-2215; Rev 2; 3/06 +3.3V, 2.5Gbps/2.7Gbps, SDH/SONET 4:1 Serializer with Clock Synthesis The MAX3892 serializer is ideal for converting 4-bitwide, 622Mbps parallel data to 2.5Gbps serial data in DWDM and SONET/SDH applications. A 4 ✕ 4-bit FIFO allows for any static delay between the parallel output

SMPTE-424M

Abstract: virtex 5 vs spartan 3e adc virtex 4 vs spartan 3e SMPTE424M SIGNAL PATH designer XAPP514 Spartan 3E xilinx adc LMH0040 LMH0051
Contextual Info: SIGNAL PATH designer Tips, tricks, and techniques from the analog signal-path experts No. 113 特集記事. 1-5 シンク ･ セパレータ .4 クロスポイント･スイッチ . 7 非圧縮の1080p60ビデオをサポートする

Contextual Info: xr XRT91L80 PRELIMINARY 2.488/2.666GBPS OC-48/STM-16 SONET/SDH TRANSCEIVER JANUARY 2005 REV. P1.0.3 GENERAL DESCRIPTION AUTORST pin can automatically recover from an overflow condition. The operation of the device can be monitored by checking the status of the LOCKDET

Contextual Info: HY5DU281622ETP 128M 8Mx16 DDR SDRAM HY5DU281622ETP This document is a general product description and is subject to change without notice. Hynix Electronics does not assume any responsibility for use of circuits described. No patent licenses are implied.

APD 10gbps

Abstract: 10Gbps Regenerator GR-253 GR-253-CORE GT10-1550FEC STM-64 APD for 10Gbps gt10 optical transponder gt10-1550 transceiver 10gb 300-pin
Contextual Info: GT10-1550FEC 10Gb/s Transceiver The GT10-1550FEC is a fully integrated, self-contained 10Gbit/s electro-optical data transceiver. Building on the performance and functionality of standard 10Gbit/s transponders, the 1550FEC’s additional features include forward error

Contextual Info: KIT ATION EVALU E L B AVAILA 19-2215; Rev 6; 10/07 +3.3V, 2.5Gbps/2.7Gbps, SDH/SONET 4:1 Serializer with Clock Synthesis The MAX3892 serializer is ideal for converting 4-bitwide, 622Mbps parallel data to 2.5Gbps serial data in DWDM and SONET/SDH applications. A 4 ✕ 4-bit FIFO

MAX3273

Abstract: MAX3882 MAX3892 MAX3892EGH 1024EP
Contextual Info: KIT ATION EVALU E L B AVAILA 19-2215; Rev 6; 10/07 +3.3V, 2.5Gbps/2.7Gbps, SDH/SONET 4:1 Serializer with Clock Synthesis The MAX3892 serializer is ideal for converting 4-bitwide, 622Mbps parallel data to 2.5Gbps serial data in DWDM and SONET/SDH applications. A 4 ✕ 4-bit FIFO

TC59LM818DMG-33

Contextual Info: TC59LM818DMG-33,-40 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC Lead-Free 288Mbits Network FCRAM2 − 4,194,304-WORDS x 4 BANKS × 18-BITS DESCRIPTION Network FCRAMTM is Double Data Rate Fast Cycle Random Access Memory. TC59LM818DMG is Network

Contextual Info: HY5DU281622ETP 128M 8Mx16 GDDR SDRAM HY5DU281622ETP This document is a general product description and is subject to change without notice. Hynix Electronics does not assume any responsibility for use of circuits described. No patent licenses are implied.

HY5DU281622ETP-5

Contextual Info: HY5DU281622ETP 128M 8Mx16 GDDR SDRAM HY5DU281622ETP This document is a general product description and is subject to change without notice. Hynix Electronics does not assume any responsibility for use of circuits described. No patent licenses are implied.

HY5DU281622ET-4

Abstract: HY5DU281622ET-36 HY5DU281622ET HY5DU281622ET-25 HY5DU281622ET-26 HY5DU281622ET-28 HY5DU281622ET-30 HY5DU281622ET-33
Contextual Info: HY5DU281622ET 128M 8Mx16 gDDR SDRAM HY5DU281622ET This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any responsibility for use of circuits described. No patent licenses are implied.

HY5DU281622ET-6

Contextual Info: HY5DU281622ET 128M 8Mx16 DDR SDRAM HY5DU281622ET This document is a general product description and is subject to change without notice. Hynix Electronics does not assume any responsibility for use of circuits described. No patent licenses are implied. Rev. 0.2 / Oct. 2003

zy 406 transistor

Abstract: zy 406 HY5DU281622ET HY5DU281622ET-25 HY5DU281622ET-26 HY5DU281622ET-28 HY5DU281622ET-30 HY5DU281622ET-33 HY5DU281622ET-36 HY5DU281622ET-4
Contextual Info: HY5DU281622ET 128M 8Mx16 GDDR SDRAM HY5DU281622ET This document is a general product description and is subject to change without notice. Hynix Electronics does not assume any responsibility for use of circuits described. No patent licenses are implied. Rev. 0.5 / Jan. 2005