806MHZ Search Results

Contextual Info: TECHNICAL DATA SHEET WHIP BS 3dB 740-806MHz Page 1 of 3 FB3740WA Series : ANTENNA All dimensions are in inches Issue : 0712 In the effort to improve our products, we reserve the right to make changes judged to be necessary. TECHNICAL DATA SHEET Page 2 of 3

TA1071A

Contextual Info: Tel: +44 1460 256 100 Fax: +44 1460 256 101 www.golledge.com Golledge Electronics Ltd Eaglewood Park, ILMINSTER Somerset, TA19 9DQ, UK SAW Filter 806MHz Part No: MP02702 Model: TA1071A REV. NO.: 1 A. MAXIMUM RATING: 1. Input Power Level: 10 dBm 2. DC Voltage : 3V

Contextual Info: 806MHz SAW Filter 30MHz Bandwidth China Electronics Technology Group Corporation No.26 Research Institute SIPAT Co., Ltd. T80602 Part Number: LB LBT80602 www.sipatsaw.com Features � For RF SAW filter � Single-ended operation � Ceramic Surface Mount Package

CMY211

Abstract: 39l2 3.5mm PCB
Contextual Info: CMY211 Datasheet Linear Mixer with Integrated LO Buffer Description Applications • The CMY 211 is an all port single ended general purpose Up- and Down-Converter. It combines small conversion losses and excellent intermodulation characteristics with a low demand of LO- and DC-power.

M68745L

Contextual Info: MITSUBISHI RF POWER MODULE M68745L SILICON MOS FET POWER AMPLIFIER, 806-870MHz, 3.8W, FM PORTABLE RADIO Dimensions in mm OUTLINE DRAWING BLOCK DIAGRAM 45 2 3 42 2-R1.5 1 4 5 5 18 5 8.5 36.5 PIN: 1 Pin : RF INPUT 2 VGG : GATE BIAS SUPPLY 3 VDD : DRAIN BIAS SUPPLY

DB35T

Abstract: mitsubishi lot code RF MOSFET MODULE MOSFET AMPLIFIER 3 Stage For MOBILE RADIO 869 MHz transistor marking zg Mitsubishi transistor rf final H46S RA02M8087MD RA02M8087MD-101 MOSFET AMPLIFIER For MOBILE RADIO 869 MHz
Contextual Info: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA02M8087MD RoHS Compliance , 806-869MHz 34dBm 7.2V, 2 Stage Amp. For PORTABLE RADIO DESCRIPTION The RA02M8087MD is a 34 dBm output RF MOSFET Amplifier Module for 7.2 volt portable radios that operate in the

RA45H7687M1

Abstract: RA45H8994M1 AN-900-027-B
Contextual Info: APPLICATION NOTE Silicon RF Power Semiconductors Document NO. AN-900-027-B Date : 10th May. 2007 Rev. date : 30th Jun. 2010 Prepared : K. Mori Confirmed : S.Kametani Taking charge of Silicon RF by Miyoshi Electronics SUBJECT: AM-AM, AM-PM and Vgg2-PM for RA45H8994M1 and RA45H7687M1

RD07MUS2B

Abstract: transistor jc 817 gp 520 diode gp 817 RF POWER TRANSISTOR f763 transistor I 17-13 0773
Contextual Info: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD07MUS2B RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,527MHz,7W RD07MUS2B is a MOS FET type transistor specifically designed for VHF/UHF RF power amplifiers applications.

RD07MUS2B

Abstract: Single-Stage amplifier GRM2162C1H151JD01E 817MHz RD07M
Contextual Info: APPLICATION NOTE Silicon RF Power Semiconductors Document NO. AN-900-039-A Date : 10th Oct. ‘08 Rev.date : 30th Jun. 2010 Prepared : Y.Takase S.Kametani Confirmed SUBJECT: :T.Okawa RD07MUS2B single-stage amplifier RF performance at f=763-870MHz,Vdd=7.2V

RA20H8087M

Abstract: RF MOSFET MODULE RA20H8087M-101 F8068
Contextual Info: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA20H8087M RoHS Compliance, 806-870MHz 20W 12.5V, 3 Stage Amp. For MOBILE RADIO DESCRIPTION The RA20H8087M is a 20-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 806- to

341V

Abstract: RA45H7687M1 22an VGG13
Contextual Info: APPLICATION NOTE RF POWER SEMICONDUCTORS Document NO. AN-900-026-A Date : 21st Feb. 2007 Rev.date : 7thJan. 2010 Prepared : K. Mori Confirmed : S. Kametani Taking charge of Silicon RF by Miyoshi Electronics SUBJECT: Recommendation of the output power control

RD07MUS2B

Abstract: RD07MUS RD07MUS2 f763 gp 817 329J RD07M mitsubishi MOSFET jc 817 j-120
Contextual Info: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD07MUS2B RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,527MHz,7W DESCRIPTION OUTLINE DRAWING 6.0+/-0.15 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 0.2+/-0.05 0.22 RD07MUS2B is a MOS FET type transistor

MMIC marking CODE 06

Contextual Info: CMY 210 GaAs MMIC Datasheet * Ultralinear Mixer with integrated LO-Buffer * Very high Input-IP3 of typical 24dBm * Very low LO-Power demand of typ. 0dBm

88E6097

Abstract: 88E6020 88E1119 88E6071 Marvell 88E1512 88AP270M 88W8897 Marvell PHY 88E6352 88PG867 MV64460
Contextual Info: 2015 Marvell Product Selector Guide TOTAL SOLUTIONS FROM MARVELL Providing a b ro a d s p e c t r u m o f s o l u t i o n s a c ro ss a w i d e ra n g e o f m a r ke t s e g m e n t s . TABLE OF CONTENTS Application Processors .

Contextual Info: MITSUBISHI RF POWER MODULE M67776L 806~870MHz, 7.2V, 5.0W, FM PORTABLE RADIO OUTLINE DRAWING BLOCK DIAGRAM Dim ensions in mm PIN : P in : RF INPUT V c c i : 1st. DC SUPPLY ® V c c 2 : 2nd. DC SUPPLY ® VC C 3 : 3rd. DC SUPPLY ®Po : RF O UTPUT ® G N D : FIN

WM9713G

Abstract: SLPB526495 PXA320 gsm based digital notice board using LCD GPIO61 PXA3xx jtag WM9713 toradex pxa android mobile circuit Kokam SLPB-526495
Contextual Info: Limestone Datasheet Revision history Date Doc. Rev. Limestone PDA Baseboard Changes 05-June-09 Rev 1.0 V2.0 Creation of this document 08-June-09 Rev 1.1 V2.0 Minor clarifications 24-July-09 Rev 1.2 V2.0 Added connector references 27-July-09 Rev 1.3 V2.0 Minor clarifications

Contextual Info: Tel: +44 1460 256 100 Fax: +44 1460 256 101 www.golledge.com Golledge Electronics Ltd Eaglewood Park, ILMINSTER Somerset, TA19 9DQ, UK SAW Filter 787.5MHz Part No: MP02289 Model: TA0823A Rev No: 1 A. MAXIMUM RATING: 1. Input Power Level: 10dBm 2. DC voltage: 5V

Germanium power

Contextual Info: Data Sheet, Version 1.2, March 2006 BGA615L7 Silicon Germanium GPS Low Noise Amplifier Automotive and Industrial Silicon Discretes N e v e r s t o p t h i n k i n g . Edition 2006-03-27 Published by Infineon Technologies AG, St.-Martin-Strasse 53, D-81541 München

Contextual Info: MITSUBISHI RF POWER MODULE M68757L SILICON MOS FET POWER AMPLIFIER, 806-870MHZ, 3W, FM PORTABLE RADIO OUTLINE DRAWING BLOCK DIAGRAM Dim ensions in mm PIN: 0 P in : RF INPUT V G G : G A TE BIAS SU PP LY © V dd PO : DRAIN BIAS SU PP LY : RF OU TPU T © G N D : FIN

RA20H8087M

Abstract: RA20H8087M-01 RA20H8087M-E01
Contextual Info: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA20H8087M 806-825/ 851-870MHz 20W 12.5V, 3 Stage Amp. For MOBILE RADIO DESCRIPTION The RA20H8087M is a 20-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 806- to 870-MHz

Contextual Info: MITSUBISHI RF POWER MODULE M57755 806-866MHZ, 12.6V, 10W, FM MOBILE RADIO PIN : Pin @VCCI VCC2 @VCC3 ®Po : RF INPUT : 1st. DC SUPPLY : 2nd. DC SUPPLY : 3rd. DC SUPPLY : RF OUTPUT : FIN A BSO LU TE MAXIMUM RATINGS Tc = 2 5 tC unless otherwise noted Symbol

BRF92A

Contextual Info: BFR92A NPN WIDEBAND TRANSISTOR Features RF Wideband Amplifier/Oscillator 5G H z Transition Frequency Low Intermodulation Distortion High Power Gain SOT-23 Low Noise TOP VIEW Mechanical Data_ nr B C A Case: SO T-23, Molded Plastic Leads/Terminals: Solderable per M IL-STD-202,

RA45H7687M1

Abstract: mitsubishi rf sirf 1v GG13
Contextual Info: MITSUBISHI RF POWER SEMICONDUCTORS APPLICATION NOTE Document NO. AN-900-026 Date : 21st Feb. 2007 Prepared : K. Mori Confirmed : S. Kametani Taking charge of SiRF by Miyoshi Electronics SUBJECT: Recommendation of the output power control for RA45H7687M1

ISDB-t modulator

Abstract: mitsumi tuner CONNECTOR 16 pin mitsumi Mitsumi vhf mitsumi modulator mitsumi tv tuner mitsumi uhf modulator mitsumi vhf modulator Tv tuner Diagram SBTVD
Contextual Info: MITSUMI Tuner for Digital Terrestrial Broadcasting Receiver for Brazil DVT33-BR01DT Terrestrial Tuners, RF Modulators OUTLINE Tuner upright model for digital terrestrial broadcasting receiver of Brazilian specifications (SBTVD-T system) Adopt high performance demodulation IC for