7C100 Search Results

CY7C1016

Abstract: A0231 A2429 C10161
Contextual Info: 7c1006: 11-25-91 Revision: April 10, 1995 ADVANCED INFORMATION CMOS static RAM organized as 262,144 words by 4 bits. Easy memory expansion is D provided by an active LOW chip enable Ċ CE , an active LOW output enable (OE), and threeĆstate drivers. The device has an

M5M27C100K

Abstract: 27C100K m5m27c100 M5M27C100K-15 M5M27C100K15 M5M27C100K-2
Contextual Info: MITSUBISHI LSIs M5M2 7C100K, -12, -15, -2/ 7C100JK -12,-15,-2 1 0 4 8 S 7 6 - B IT 1 3 1 0 7 2 - WORD B Y 8-B IT CMOS ER A S A B LE AND E LE C T R IC A LLY REPROGRAM M ABLE ROM DESCRIPTION The Mitsubishi 7C100K, J K is a high-speed 1048576bit ultraviolet erasable and electrically reprogrammable read

Contextual Info: MITSUBISHI LSIs M5M2 7C100K, -12, -15, -2/ 7C100JK -12, -15,-2 1048576-BIT 131072-WORD BY 8-BIT CMOS ERASABLE AND ELECTRICALLY REPROGRAMMABLE ROM DESCRIPTION The M its u b is h i M 5 M 2 7 C 1 0 0 K , J K is a high-speed 10 48576- PIN CONFIGURATION (TOP VIEW)

V32 Package

Abstract: CY7C1001 CY7C1002 7C10011
Contextual Info: PRELIMINARY ’# CYPRESS • H igh speed — tAA = 12 ns • T ransparent w rite 7C1001 • C M O S for optim um speed/pow er • Low active power — 910 rnW • Low standby power — 275 mW • 2.0V data retention (optional) — lOfl |iW • 256K x 4 Static RAM

Contextual Info: 7C1009: 1 1 -2 5 -9 1 Revision: Monday, January 11,1993 — ^ MAR S 3 1993 PRELIMINARY CYPRESS SEMICONDUCTOR 7C1009 128Kx 8 Static RAM Features Functional Description • Highspeed — tAA = 12 ns • CMOS for optimum speed/power • Low active power — 1020 mW

Contextual Info: 7c1001:1 1 -2 5 -9 1 Revision: Tuesday, December 22,1992 if 83 •». 7C1001 PRELIMINARY 7C1002 - - -— 256K x 4 Static RAM with Separate I/O CYPRESS SEMICONDUCTOR Features Functional Description • Highspeed The 7C1001 and 7C1002 arc highperformance CMOS static RAMs orga­

C1016

Abstract: C10161
Contextual Info: 7c1006:11-25-91 Revision: April 10,1995 CY7C1016 ADVANCED INFORMATION 256K x 4 Static RAM CMOS static RAM organized as 262,144 words by 4 bits. Easy memory expansion is provided by an active LOW chip enable CE , an active LOW output enable (OE), and three-state drivers. The device has an

Contextual Info: 7c1007: 1 1 -2 5 -9 1 Revision: Monday, December 2 1 ,1992 ^?1A R S3 1983 7C1007 PRELIMINARY CYPRESS '. SEMICONDUCTOR 1M x 1 Static RAM Features Functional Description • H ighspeed — tAA — 12 ns • CMOS for optimum speed/power • Low active power

CY7C1009

Abstract: 7C1009 A14C
Contextual Info: PRELIMINARY r y f|pPA RJL- lrP Anni I 7C1009 128Kx 8 Static RAM Features Functional Description • Highspeed — tAA = 12 ns • CMOS for optimum speed/power • Low active power — 1020 mW • Low standby power — 250 mW The 7C1009 is a high-performance

A10C

Abstract: CY7C1006
Contextual Info: CYPRESS SEMICO NDU CTOR MbE » I aSflìbbé QD0ti7Q4 T • 7C1006 ADVANCED INFORMATION. CYPRESS SEMICONDUCTOR 256K x 4 Static R/W RAM Features Functional Description • Highspeed — U a = 15 ns • CMOS for optimum speed/power • Low active power — 800mW

tfk 825

Contextual Info: 1M x 1 Static RAM Features Functional Description • High speed T he 7C1007 is a high-perform ance C M O S static R A M organized as 1,048,576 w ords by 1 bit. Easy m em ory expansion is provided by an active LO W chip enable C E and th ree-state drivers.

Contextual Info: 7S C Y P R E S S 7C1006 p r e l im in a r y 256Kx 4 Static RAM Features Functional Description • High speed T he 7C1006 is a high-perform ance CM OS static RA M organized as 262,144 words by 4 bits. Easy m em ory expansion is provided by an active LO W chip enable

Contextual Info: fax id: 1089 =mmmm rrm - 7C1009V33 C Y7C109 V33 PRELIMINARY 128K x 8 Static RAM memory expansion is provided by an active LOW chip enable CE-| , an active HIGH chip enable (CE2), an active LOW out­ put enable (OE), and three-state drivers. Writing to the device

Contextual Info: fax id: 1058 CY7C107 7C1007 w / C Y P R E S S 1M x 1 Static RAM memory expansion is provided by an active LOW chip enable CE and three-state drivers. These devices have an automatic power-down feature that reduces power consumption by more than 65% when deselected.

automatic change over switch circuit diagram

Abstract: CY7C1007 CY7C1007-12PC CY7C1007-12VC CY7C1007-15PC R1480
Contextual Info: 1CY 7C10 07 PRELIMINARY 7C1007 1M x 1 Static RAM Features is provided by an active LOW chip enable CE and three-state drivers. The device has an automatic power-down feature that reduces power consumption by more than 65% when deselected. • High speed

cy7c109l-15vi

Abstract: CY7C109L15VI CY7C109L CY7C1009 CY7C109 CY7C1009-15VI cy7c109-15zc CY7C109-15VI
Contextual Info: CY7C109 7C1009 128K x 8 Static RAM Features • High speed — tAA = 10 ns • Low active power — 1017 mW max., 12 ns • Low CMOS standby power — 55 mW (max.), 4 mW (Low-power version) • 2.0V Data Retention (Low-power version) • Automatic power-down when deselected

C106B4

Abstract: C106B CY7C1006B CY7C106B c106b1 equivalent
Contextual Info: 006B CY7C106B 7C1006B 256K x 4 Static RAM Features Enable CE , an active LOW Output Enable (OE), and three-state drivers. These devices have an automatic power-down feature that reduces power consumption by more than 65% when the devices are deselected.

Contextual Info: PRELIMINARY 7C1009 128K x 8 Static R AM Features Functional Description • High speed — tAA = 12 ns • CMOS for optimum speed/power • Low active power — 1020 mW • Low standby power — 250 mW • 2.0V data retention optional — 100 ^iW • AvaUable in 450 x 550-mil LCC

ZL78

Abstract: 7C1001
Contextual Info: 7C1001 7C1002 PRELIMINARY 256Kx 4 Static RAM with Separate I/O Features Functional Description • High speed The 7C1001 and 7C1002 are highperformance CMOS static RAMs orga­ nized as 262,144 x 4 bits with separate I/O. Easy memory expansion is provided by ac­

Contextual Info: THIS SPEC IS OBSOLETE Spec No: 38-05038 Spec Title: CY7C109B, 7C1009B 128K X 8 STATIC RAM Sunset Owner: Prashanth Jnanendra PRAS Replaced by: NONE CY7C109B 7C1009B 128K x 8 Static RAM Functional Description[1] Features • High speed The CY7C109B/7C1009B is a high-performance CMOS

Contextual Info: MODELS M, C, F,T, B NTC Thermistors Coated FEATURES • Small size - conformal coated • Wide resistance range • Available in 11 different R-T curves • Configured for standard P.C. board mounting or assembly in probes STANDARD ELECTRICAL SPECIFICATIONS and DIMENSIONAL CONFIGURATIONS

ATPA

Abstract: 7130SA100P 24l01 7C263/4-35C 7164S15Y cy9122-25 7133SA35J 7142sa55 7130sa55p cy2149-45c
Contextual Info: Product Line Cross Reference CYPRESS CYPRESS CYPRESS CYPRESS CYPRESS CY2147-35C CY7C147-35C CY7C147-45C CY7C147-35C CY91L22-35C CY7C122-35C CY2147-45C CY2147-35C CY7C148-35C CY7C148-25C+ CY91L22-45C CY93L422AC CY2147-45C CY7C147-45C CY7C148-45C CY7C148-35C

CY7C1007D-10VXI

Abstract: CY7C107D CY7C107D-10VXI
Contextual Info: CY7C107D 7C1007D 1-Mbit 1M x 1 Static RAM Functional Description [1] Features • Pin- and function-compatible with CY7C107B/7C1007B • High speed — tAA = 10 ns • Low Active Power — ICC = 80 mA @ 10 ns • Low CMOS Standby Power The CY7C107D and 7C1007D are high-performance

CY7C1006D

Abstract: CY7C106D CY7C106D-10VXI 7C106D
Contextual Info: CY7C106D 7C1006D 1-Mbit 256K x 4 Static RAM Functional Description [1] Features • Pin- and function-compatible with CY7C106B/7C1006B • High speed — tAA = 10 ns • Low active power — ICC = 80 mA @ 10 ns • Low CMOS standby power — ISB2 = 3.0 mA