BYX96
Abstract: T17C as6 diode BYX96-300 BYX96-300R BYX96-300U D60-r
Contextual Info: BYX96 SERIES PHILIPS INTERNATIONAL SbE D • 711DflSt. D041bS5 1T3 ■ PHIN r-o ■ n RECTIFIER DIODES Also available to B S 9 331-F 129 Silicon rectifier diodes in metal envelopes similar to DO -4, intended fo r use in power rectifier applications. The series consists o f the following types:
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byx96g041bs5bs9331-f129byx96-300+7byx96-300r1600r7z72262t17cas6 diodebyx96-300ud60-r
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TIP2955
Abstract: TIP2955 NPN power transistor transistor PNP TIP2955 TIP3055 circuit use tip2955
Contextual Info: TIP2955 PHILIPS INTERNATIONAL SbE D • 711DflSt, 0 0 4 3 5 ^ 6 1T1 ■ 7 “- 3 3 PH IN ’ - Z 3 SILICON POWER TRANSISTOR P-N-P epitaxial-base power transistor in a plastic SO T-93 envelope, for use in audio output stages and general amplifier and switching applications. N-P-N complement is T IP 3 0 5 5 .
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tip2955ot-93tip3055711002b+40043fcid2tip2955 npn power transistortransistor pnp tip2955circuit use tip2955
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100-P
Abstract: BUK454-800A BUK454-800B T0220AB
Contextual Info: PHILIPS INTERNATIONAL bSE D • 711DflSt. 00b4D71 13fl M P H I N Philips Semiconductors Product Specification PowerMOS transistor GEN ER AL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in
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711dflst00b4d71buk454-800a/bt0220ab+6buk454-800a-800b100-pbuk454-800abuk454-800b
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4046 application note 9398
Abstract: 4046 application note pll 4046 application note 9398 649 90011 4046 as FM demodulator 4046 PLL Designers Guide PLL WITH VCO 4046 4046 application note pll philips 4046 vco Zero-Crossing Trigger-Phase Control Circuit Dim 4046 application note philips
Contextual Info: PHILIPS INTERNATIONAL M E , „ ?11Qé2t ^ -p | P h ilip s S e m ic o n d u c to rs P re lim in a ry S p e c ific a tio n PLL with bandgap controlled VCO 74HCT9046A FEATURES • Frequency discrimination
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74hct9046a4046 application note 93984046 application note pll4046 application note 9398 649 90011+74046 as fm demodulator4046 pll designers guidepll with vco 40464046 application note pll philips4046 vcozero-crossing trigger-phase control circuit dim4046 application note philips
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BUK427-600B
Abstract: 18-SO BUK427-600 d0411
Contextual Info: 7 ^ 3 9 - / / Philips C om ponents Data sheet status Product specification date of issue March 1991 PHILIPS BUK427-600B PowerMOS transistor INTERNATION GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full pack envelope.
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buk427-600711dfl2td0411s0-sot199+3buk427-600b18-sod0411
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1df diode
Abstract: 74ABT 74ABT240-1D 74ABT240-1DB 74ABT240-1N
Contextual Info: PHILIPS INTERNATIONAL bSE D • 711Dfl2b 0057442 534 ■ PHIN Philips Sem iconductors Advanced BiCMOS Products P roduct specification Octal inverting buffer with 30£2 series termination resistors 3-State 74ABT240-1 QUICK REFERENCE DATA FEATURES • Octal bus interface
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711dfl2b74abt240-112ma/-32ma500ma+674abt500ns1df diode74abt240-1d74abt240-1db74abt240-1n
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circuit diagram of rc transmitter and receiver
Abstract: philips e3 Philips KS capacitors SC68C562 SC68C562C1N SCN68562
Contextual Info: P H IL IP S I N T E R N A T I O N A L bSE D B3 7 1 1 0 B S b OOblBlfl 10Ô « P H I N Philip* Semiconductor* Data Communication* Product* Product «pacification CMOS Dual universal serial communications controller CDUSCC erfiorceo SC68C562 PIN CONFIGURATIONS
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sc68c562circuit diagram of rc transmitter and receiverphilips e3philips ks capacitors+2sc68c562c1nscn68562
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BAS45
Abstract: IEC134
Contextual Info: 5bE D IPHIN 711002b 0040103 375 PHILIPS INTERNATIONAL BAS45 T -0 7 -IS SbE D LOW LEAKAGE DIODE Switching diode w ith a very low reverse current, encapsulated in a subminiature glass DO-34 envelope, Q UICK REFERENCE D A T A Continuous reverse voltage Vr max.
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711002bbas45t-07-/sdo-34+4od-68711dfl2bd0401flmiec134
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54ABT125
Contextual Info: P hilips Sem iconductors M ilita ry Advanced BiCMOS P roducts P roduct specification Quad buffer 3-State FEATURES 54ABT125 • ESD protection exceeds 2000V per MIL STD 883 Method 3015 and 200V per Machine Model • Quad bus interface • 3-State buffers
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54abt12548ma/-24ma500madesignatoabt125+1500ns
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FX1115
Abstract: BGY145B vHF amplifier module VHF Amplifier Chip rf amplifier module 100 VTB 307 vhf amplifier MCB415
Contextual Info: Philips Semiconductors Preliminary specification VHF amplifier module DESCRIPTION BGY145B PINNING - SOT183A The BGY145B is a RF amplifier module, designed for use in transmitters of mobile communications equipment powered by vehicles with 12.5 V battery supplies.
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bgy145boutp40ot183afx1115+6vhf amplifier modulevhf amplifier chiprf amplifier module100 vtb 307vhf amplifiermcb415
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5.5MHz ceramic Filter
Abstract: TOKO 455KHz ceramic filter ceramic filter 5.5mhz filter 455khz Toko variable coil 7mm 455KHz IF npo 22j Ceramic filter 455khz Murata 455KHz TOKO ceramic filter NE605
Contextual Info: Product specification Philips Semiconductors Low-voltage high performance mixer FM IF system_ DESCRIPTION The SA608 is a low voltage high performance monolithic FM IF system incorporating a mixer/oscillator, two limiting intermediate frequency amplifiers, quadrature detector,
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sa60820-leadne605455khz+95.5mhz ceramic filtertoko 455khz ceramic filterceramic filter 5.5mhzfilter 455khztoko variable coil 7mm 455khz ifnpo 22jceramic filter 455khzmurata 455khztoko ceramic filter
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M2404
Abstract: BT138F triac 134 M3403 triac bt138f
Contextual Info: PHILIPS INTERNATIONAL bSE ]> • 711002t. 0 ü b 2 2 R 5 J bS'i « P H I N BT138F SERIES FULL-PACK TRIACS Glass-passivated 12 ampere triacs in SO T-186 envelopes, w h ic h fe a tu re an e le c tric a lly isolated m o u n tin g base. T h e y are intended f o r use in applica tio ns req u irin g high b id ire c tio n a l tra n sie n t and b lo ckin g
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711002bl22r5bt138fot-186+5bt138f-m2404triac 134m3403triac bt138f
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SMD 5 PIN PAL1
Abstract: 74F5074 74F74
Contextual Info: Philips Semiconductors Product specification BiCMOS versatile PAL device ABT22V1OA/B DESCRIPTION APPLICATIONS The ABT22V10 is a versatile PAL1 device fabricated with the Philips BiCMOS process known as QUBiC. The QUBiC process produces a very high speed device 1 Ons worst case which has excellent noise
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ha 13627
Abstract: APC UPS CIRCUIT DIAGRAM APC UPS WIRING DIAGRAM APC UPS CIRCUIT layout CIRCUIT DIAGRAM APC UPS 700 f5j transistor stt 433 AM Transmitter block diagram P8XC592 APC UPS 650 CIRCUIT DIAGRAM P87C592
Contextual Info: INTEGRATED CIRCUITS i A S l n l H I T P8XC592 8-bit microcontroller with on-chip CAN Product specification Supersedes data of August 1992 File under Integrated Circuits, IC20 January 1995 Philips Semiconductors PHILIPS 7110 62 b DOfibbTb bflH Philips Semiconductors
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p8xc592711062bscd36453062/150q/02/pp116+107110a2bha 13627apc ups circuit diagramapc ups wiring diagramapc ups circuit layoutcircuit diagram apc ups 700f5j transistorstt 433 am transmitter block diagramapc ups 650 circuit diagramp87c592
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compandor
Abstract: CD8373D CD8373DK S020 SA5752 SA5753 TDA7050 TDA7050T UMA1000T audio compressor expander IC 8 pin
Contextual Info: INTEGRATED CIRCUITS CD8373 Audio processor — filter and control section Preliminary specification 1995 Feb 17 IC 17 Philips Semiconductors PHILIPS PH ILIPS 7110fl2b 0 0 6 ^ 1 0 3 =120 P relim inary specification Philips S em iconductors Audio processor - filter and control section
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cd8373711002bot266-17110flbfc+10compandorcd8373dcd8373dks020sa5752sa5753tda7050tda7050tuma1000taudio compressor expander ic 8 pin
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BYX25
Abstract: BYX25-600 diode BYX25 600 BYX25-600R BYX25-1400
Contextual Info: BYX25 SERIES ~ SbE D PHILIPS INTERNATIONAL • 711Dfl2b □ DMlS'lb 544 « P H I N T-0 7 - H CONTROLLED AVALANCHE RECTIFIER DIODES Diffused silicon diodes in DO—4 metal envelopes, capable of absorbing transients and intended for power rectifier applications. The series consists of the following types:
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byx25711dfl2bbyx25--600byx25--1400+8byx25--600rbyx25--1400r10-32unf711dflstibyx25-600diode byx25 600byx25-600rbyx25-1400
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PCD3346T
Abstract: MAB8400 3843 application note multiway amplifier MAB8048 PCD3312 PCD3346P S028 pj 21 s1j SOT117
Contextual Info: PCD3346 SINGLE-CHIP 8-BIT MICROCONTROLLER DESCRIPTION The PCD3346 is a single-chip 8-bit m icrocontroller manufactured in CMOS technology. The PCD3346 is a member o f the PCD33XX fam ily and as such has special on-chip features fo r telephony applications.
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pcd3346pcd33xxmab8048mab8400+912txtalpcd3346t3843 application notemultiway amplifierpcd3312pcd3346ps028pj 21 s1jsot117
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fdk transformer ei
Abstract: TDA8760
Contextual Info: P hilips S em iconductors P re lim in a ry sp ecification 10-bit high-speed analog-to-digital converter TDA8760 FEATURES APPLICATIONS • 10-bit resolution • High-speed analog-to-digltal conversion for • Sampling rate up to 50 MHz - Video signal digitizing
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10-bittda8760100nf7110a2b+200772b1fdk transformer ei
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LTN211R-10
Abstract: DL 711 PHILIPS LTN211 philips dl 711 DISPLAY LTN211R LTN211F-10 LTN211R-50 philips ltn211r 84x44x DDS71
Contextual Info: PHILIPS INTERNATIONAL bDE D • TllOfiab 0D5712B 2T3 ■ P H I N P h ilip s C o m p o n e n ts LTN211 Data sheet status P r o d u c t s p e c ific a tio n date of issue J u ly 1 9 9 0 Liquid crystal display Q UICK REFERENCE DATA MODULE DESCRIPTION The LTN211 is a 5 x 7 dot, 16-character, 2-line dot matrix
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0d5712bltn21116-character711002b+9ltn211r-10dl 711 philipsphilips dl 711display ltn211rltn211f-10ltn211r-50philips ltn211r84x44xdds71
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itt 2222
Abstract: BGY115D ITT 2222 A transistor 6 pin SMD Z2 Z8 ITT BGV115A BGY115A BGY115B MSA907
Contextual Info: Product specification Philips Semiconductors BGY115A; BGY115B; BGY115C/P; BGY115D UHF amplifier modules PINNING -S O T 321A FEATURES • 6 V nominal supply voltage1996 May 13 PIN • 1.2 W output power BGY115A, BGY115B and BGY115D • 1.4 W output power (BGY115C/P)
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voltage1996bgy115abgy115bbgy115d+8bgy115c/p-sot321aitt 2222itt 2222 atransistor 6 pin smd z2z8 ittbgv115amsa907
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lts 542 pin diagram
Abstract: lts 542 lts 542 diagram pin diagram of LTS 542 SJ0001 fuse smd code N fuse smd code Y 74F5074 74F74 fuse smd code ps
Contextual Info: Philips Semiconductors Product specification BiCMOS versatile PAL device ABT22V1OA/B DESCRIPTION APPLICATIONS The ABT22V10 is a versatile PAL1 device fabricated with the Philips BiCMOS process known as QUBiC. The QUBiC process produces a very high speed device 1 Ons worst case which has excellent noise
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abt22v1oa/babt22v10by71slts 542 pin diagram+9lts 542lts 542 diagrampin diagram of lts 542sj0001fuse smd code nfuse smd code y74f507474f74fuse smd code ps
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eeprom st
Abstract: DIP28 MAB8048 PCD3755A PCD3755AP PCD3755AT PCD3755E PCD3755EP S028 ic la 7840
Contextual Info: Philips Semiconductors Product specification 8-bit microcontrollers with DTMF generator, 8 kbytes OTP and 128 bytes EEPROM_ CONTENTS 1 FEATURES 2 GENERAL DESCRIPTION 3 ORDERING INFORMATION 4 BLOCK DIAGRAM 5 PINNING INFORMATION 5.1 5.2 Pinning Pin description
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711d6sbd1d3111eeprom stdip28+8mab8048pcd3755apcd3755appcd3755atpcd3755epcd3755eps028ic la 7840
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BLX91A
Abstract: BLX91 J 3305 transistor 936 transistor 931 D057 G027 IEC134 transistor 3305
Contextual Info: PHI L IP S IN TE R N A T I O N A L MAINTENANCE TYPE MIE J> 7 1 10 â 2 b 0 0 27 0 2 3 □ B i PHIN B LX 91A . m T '3 3 'O S U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for transmitting applications in class-A, B or C w ith a
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blx91at-33-os28encyjune1976+8blx91j 3305transistor 936transistor 931d057g027iec134transistor 3305
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2222 861
Abstract: BGY47B heatsink catalogue PHILIPS UHF AMPLIFIER MODULE LIST
Contextual Info: Philips Semiconductors Preliminary specification UHF amplifier module BGY47B FEA TU R ES D E S C R IP T IO N • 7 .5 V or 9 .6 V nominal supply voltage T h e B G Y 47B is a tw o-stage U H F am plifier module. • 2 W or 3 .2 W output power It consists of two N P N silicon planar transistor chips
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bgy47bpinning-sot181711062b00741b4+5ot1817110fleb2222 861heatsink cataloguephilips uhf amplifier module list
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