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100-P Abstract: BUK454-800A BUK454-800B T0220AB Contextual Info: PHILIPS INTERNATIONAL bSE D • 711DflSt. 00b4D71 13fl M P H I N Philips Semiconductors Product Specification PowerMOS transistor GEN ER AL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in	OCR Scan	711dflst 00b4d71 buk454-800a/b t0220ab +6buk454 -800a -800b 100-p buk454-800a buk454-800b	PDF

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100-P

Abstract: BUK454-800A BUK454-800B T0220AB
Contextual Info: PHILIPS INTERNATIONAL bSE D • 711DflSt. 00b4D71 13fl M P H I N Philips Semiconductors Product Specification PowerMOS transistor GEN ER AL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in

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711dflst 00b4d71 buk454-800a/b t0220ab +6

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