65 MARKING SOT23 Search Results

marking code E3t

Contextual Info: SIEMENS NPN Silicon AF Transistors BCW 65 BCW 66 • For general AF applications • High current gain • Low collector-emitter saturation voltage • Complementary types: BCW 67, BCW 68 PNP Type BCW BCW BCW BCW BCW BCW 65 65 65 66 66 66 A B C F G H Marking

SMD4148

Abstract: MMBD1702 TMPD4148 5d marking BAV70-A4 JS29 MMBD1503A 5d surface mount diode BAS16 5H TMPD6050
Contextual Info: SURFACE MOUNT SWITCHING DIODES Cases: SOT-23 Molded Plastic Operating Temperature:-65℃to150℃ Min. Repetitive Max. Fwrd. Part No. Cross- Marking Rev. Voltage Current Vrrm V IF(mA) Reference BAS21 MMBD1401 MMBD1402 MMBD1403 MMBD1404 MMBD1405 MMBD1501A MMBD1503A

Contextual Info: MMBT5771 PNP Switching Amplifier Description C This device is designed for very high-speed, saturated switching at collector currents to 100 mA. Sourced from process 65. E SOT-23 Mark: 3R B Ordering Information Part Number Marking Package Packing Method MMBT5771

6CW 73

Abstract: 6CW pNP 6CW NPN marking 6cw sot-23
Contextual Info: SIEMENS PNP Silicon AF Transistors • • • • BCW 67 BCW 68 For general AF applications High current gain Low collector-emitter saturation voltage Complementary types: BCW 65, BCW 66 NPN Type Marking Ordering Code (tape and reel) PinC¡onfiguration

Contextual Info: MMBT3640 PNP Switching Amplifier Description C This device is designed for very high-speed saturated switching at collector currents to 100 mA. Sourced from process 65. E SOT-23 Mark: 2J B Ordering Information Part Number Marking Package Packing Method MMBT3640

BCW66

Contextual Info: SIEMENS NPN Silicon AF Transistors • • • • BCW 65 BCW 66 For general AF applications High current gain Low collector-emitter saturation voltage Complementary types: BCW 67, BCW 68 PNP Type Marking Ordering Code (tape and reel) PinC onfiguration 2

C1892

Abstract: Q62702-C1632 Q62702-C1479 Q62702-C1516 Q62702-C1526 Q62702-C1612 Q62702-C1892 BCW65A
Contextual Info: NPN Silicon AF Transistors BCW 65 BCW 66 For general AF applications ● High current gain ● Low collector-emitter saturation voltage ● Complementary types: BCW 67, BCW 68 PNP ● Type Marking Ordering Code (tape and reel) Pin Configuration 1 2 3 Package1)

C1681

Abstract: c1555 c1893 Q62702-C1322 Q62702-C1480 Q62702-C1555 Q62702-C1560 Q62702-C1681 Q62702-C1893 BCW67C
Contextual Info: PNP Silicon AF Transistors BCW 67 BCW 68 For general AF applications ● High current gain ● Low collector-emitter saturation voltage ● Complementary types: BCW 65, BCW 66 NPN ● Type Marking Ordering Code (tape and reel) Pin Configuration 1 2 3 Package1)

EHs SOT-23

Abstract: EFs SOT-23
Contextual Info: BCW 65, BCW 66 NPN Silicon AF Transistor 3 • For general AF applications • High current gain • Low collector-emitter saturation voltage • Complementary types: BCW 67, BCW 68 PNP 2 1 Type Marking Pin Configuration BCW 65A EAs 1=B 2=E 3=C SOT-23 BCW 65B

Contextual Info: SIEMENS PNP Silicon AF Transistors • • • • BCW67 BCW 68 For general AF applications High current gain Low collector-emitter saturation voltage Complementary types: BCW 65, BCW 66 NPN Type BCW BCW BCW BCW BCW BCW 67 67 67 68 68 68 A B C F G H Marking

DHs SOT-23

Abstract: DFs SOT-23 sep 67a BCW67 das sot 23 67A SOT 23 6
Contextual Info: BCW 67, BCW 68 PNP Silicon AF Transistors 3 • For general AF applications • High current gain • Low collector-emitter saturation voltage • Complementary types: BCW 65, BCW 66 NPN 2 1 Type Marking Pin Configuration BCW 67A DAs 1=B 2=E 3=C SOT-23 BCW 67B

SOT23 MARKING SBs

Abstract: VPS05557 marking SBs BSS145 SD marking BSs sot23 siemens
Contextual Info: SIEMENS BSS 145 SIPMOS Small-Signal Transistor h • N channel j\/\ • Enhancement mode 2 • ^GSith = 14 •••2-3 v 1 Pin 1 Pin 2 G Type Vos b BSS 145 65 V 0.22 A Type BSS 145 Ordering Code Q67000-S132 ffDS on) 3.5 n VPS05557 Pin 3 S Package Marking

marking BSs sot-23

Abstract: Q67000-S132 E6327 marking BSs SOT23 MARKING SBs
Contextual Info: BSS 145 SIPMOS Small-Signal Transistor • N channel • Enhancement mode • VGS th = 1.4 .2.3 V Pin 1 Pin 2 G Pin 3 S Type VDS ID RDS(on) Package Marking BSS 145 65 V 0.22 A 3.5 Ω SOT-23 SBs Type BSS 145 Ordering Code Q67000-S132 D Tape and Reel Information

Contextual Info: BSS 145 Infineon t«ehno!ogi6* SIPMOS Small-Signal Transistor • N channel s \A • Enhancement mode 2 • ^GS th = 1 4 -2-3 V 1 Pin 1 Pin 2 Vbs BSS 145 65 V Type BSS 145 Ordering Code Q67000-S132 0.22 A Pin 3 S G Type VPS05557 flDS(on) Package Marking

Kingbor Technology

Abstract: A19x Kingbor KB3408 7.4v battery SOT23-5 MARKING ea JMK316BJ106ML KB3408-ADJ MO-193 marking sw
Contextual Info: Kingbor Technology Co.,Ltd KB3408 TEL: 86 0755-26508846 FAX:(86)0755-26509052 1.5MHz, 350mA Synchronous Step-Down Regulator in SOT23-5 DESCRIPTION FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ High Efficiency: Up to 96% Very Low Quiescent Current: Only 20µA

MOSFET MARKING 3F

Abstract: BT3904 sot23 s07 marking 702 sot23 Diode marking CODE 1M transistor marking 6c 2F PNP SOT23 marking code 2f 2F P marking NA MARKING SOT23
Contextual Info: Surface M o u n t Transistors NPN Transistors/SOT23 Type Num ber M arking Code* VcEO Volts 1P IN 2X 40 40 40 MMBTA05 MMBTA06 MMBT5551 1H 1G 3S MMBTA42 ID MMBT2222A IMBT/MMBT3904 MMBT4401 hpE@ VCE/IC VcE SAT@ Ic/Ib fT @ VCE/IC Cqb @ Vcb V/m A max.V mA/m A MHz

marking code ce SOT23

Abstract: MOSFET MARKING 3F marking code 3a sot23 CE MARKING CODE
Contextual Info: Surface M ount Transistors NPN Transistors/SOT23 Type Num ber hpE @ VCE/IC M arking Code* Volts 1P IN 2X 40 40 40 MMBTA05 MMBTA06 MMBT5551 1H 1G 3S MMBTA42 1D MMBT2222A IMBT/MMBT3904 MMBT4401 V ceo V CE SAT @ Ic /lß fT @ V ce/I c Cqb @ VCB V/m A max.V m A/m A

marking K1R

Abstract: AEC-Q101 AECQ101 AECQ-101 C1R SOT23
Contextual Info: BC846A-BC848C NPN SURFACE MOUNT SMALL SIGNAL TRANSISTOR IN SOT23 Features Mechanical Data • • • • • • • • • • • • Ideally Suited for Automatic Insertion Complementary PNP Types Available BC856 – BC858 For switching and AF Amplifier Applications

K1M 103

Abstract: AECQ-101 AECQ101 k1R diodes bc847c K1R SOT23 20/capacitor K1M 103
Contextual Info: BC846A-BC848C NPN SURFACE MOUNT SMALL SIGNAL TRANSISTOR IN SOT23 Features Mechanical Data • Ideally Suited for Automatic Insertion  Case: SOT23  Complementary PNP Types Available BC856 – BC858  Case material: molded plastic, “Green” molding compound

BAT54A

Contextual Info: Preliminary Data Sheet PD-20763 12/01 BAT54A SCHOTTKY DIODE 0.2 Amp 3 2 Major Ratings and Characteristics Characteristics SOT23 Value Units 0.2 A Description/ Features VRRM 30 V IFSM @ tp= 10 ms sine 1.0 A This Schottky barrier diode is designed for high speed switching

IR54S

Abstract: BAT54S
Contextual Info: Preliminary Data Sheet PD-20762 12/01 BAT54S SCHOTTKY DIODE 0.2 Amp 3 2 Major Ratings and Characteristics Characteristics SOT23 Value Units 0.2 A Description/ Features VRRM 30 V IFSM @ tp= 10 ms sine 1.0 A This Schottky barrier diode is designed for high speed switching

IR54

Abstract: BAT54 a 20761 PD-20761
Contextual Info: Preliminary Data Sheet PD-20761 12/01 BAT54 SCHOTTKY DIODE 0.2 Amp 3 2 Major Ratings and Characteristics Characteristics SOT23 Value Units 0.2 A Description/ Features VRRM 30 V IFSM @ tp= 10 ms sine 1.0 A This Schottky barrier diode is designed for high speed switching

ir54c

Abstract: BAT54C
Contextual Info: Preliminary Data Sheet PD-20760 12/01 BAT54C SCHOTTKY DIODE 0.2 Amp 3 2 Major Ratings and Characteristics Characteristics SOT23 Value Units 0.2 A Description/ Features VRRM 30 V IFSM @ tp= 10 ms sine 1.0 A This Schottky barrier diode is designed for high speed switching

Contextual Info: SIDACtor Protection Thyristors Broadband Optimized Protection SDP Biased Series - SOT23-6 RoHS Pb e3 Description This new SDP Biased series provides overvoltage protection for applications such as VDSL2, ADSL2, and ADSL2+ with minimal effect on data signals. This