64K RAM Search Results

IDT7M812

Contextual Info: IN T E G R A T E D DEVI CE 3ÛE D • 4ÔES771 Q0G7G1M fl ■ ID T 23-14 IDT7M812 IDT7M912 64K x 8 64K x 9 CMOS STATIC RAM MODULE FEATURES: DESCRIPTION: • High-density 512K CMOS static RAM module • 64K x 8 IDT7M812 or 64K x 9 (IDT7M912) configuration

7M912

Abstract: IDT7M912 Idt7m812 7M812
Contextual Info: Integrated Device Technology, Inc. IDT7M812 ID77M912 64K x 8 64K x 9 CMOS STATIC RAM MODULE FEATURES: DESCRIPTION: • High-density 512K CM OS static RAM module • 64K x 8 IDT7M812 or64K x 9 (IDT7M912) configuration • Fast access times — Military: 25ns (max.)

Contextual Info: DPS1037 Dense-Pac Microsystems, Inc. 64K X 16 CMOS SRAM MODULE O DESCRIPTION: The DPS1037 is a 64K X 16 high-speed, low-power static RAM module comprised of sixteen 64K X 1 monolithic SRAM's, and decoupling capacitors surface mounted on a co-fired ceramic substrate having

Contextual Info: LATTI ¿ y / SR64K8 HIGH PERFORMANCE 64K STATIC RAM 8 K x 8 Preliminary FEATURES r FUNCTIONAL BLOCK DIAGRAM FULLY STATIC C M O S — No Clocks Required FA ST A C C E S S T IM E = C Y C L E TIM E — SR 64K 8-35: 35 ns Max — SR 64K 8-45: 45 ns Max — SR 64K 8-55: 55 ns Max

Contextual Info: DPS8644 □PM Dense-Pac Microsystems, Inc. 64K X 4 CMOS SRAM MODULE O NOT RECOMMENDED FOR NEW DESIGNS D ESCR IPTIO N : The DPS8644 is a 64K X 4 high-speed, low-power static RAM module comprised of four 64K X 1 monolithic SRAM 's, and decoupling capacitors

Contextual Info: DPS64X16P □ Dense-Pac Microsystems, Inc. 0_ 64K X 16 CMOS CM SRAM MODULE PRELIMINARY DESCRIPTION: The DPS64X16P is a 64K X 16 high-speed, low-power static RAM module comprised of four 64K X 4 monolithic SRAM's, and decoupling capacitors surface mounted on a FR-4 substrate.

DSC-703

Contextual Info: IDT 7MC4018 64K x 6 CMOS STATIC RAM CERAMIC SIP MODULE WITH SEPARATE DATA I/O FEATURES: DESCRIPTION: • High-density 64K x 6 CMOS static RAM module The IDT7MC4018 isa 64K x 6-bit high-speed static RAM module constructed on a co-fired ceram ic substrate using six IDT7187

Contextual Info: Í D P M 7Dense-Pac Microsystems. Inc. 0 DPS1025 64K X 16 CMOS SRAM MODULE NOT RECOMMENDED FOR NEW DESIGNS D ESCRIPTIO N : The DPS1025 is a 64K X 8 high-speed, low-power static RAM module comprised of sixteen 64K X 1 monolithic SRAM 's, and decoupling capacitors

saa 1291

Abstract: CY7C008 CY7C009 CY7C018 CY7C019 IDT7008
Contextual Info: iJë- CY7C008/009 CY7C018/019 : CYPRESS PRELIMINARY 64K/128K x 8/9 Dual-Port Static RAM Features True Dual-Ported memory cells which allow sim ulta­ neous access of the same memory location 64K x 8 organization CY7C008 128K x 8 organization (CY7C009) 64K x 9 organization (CY7C018)

L7C195PC25

Abstract: L7C194PC15 L7C194PC20 L7C194PC25 IDT71258
Contextual Info: L7C194/195 64K x 4 Static RAM L7C194/195 DEVICES INCORPORATED 64K x 4 Static RAM DEVICES INCORPORATED FEATURES DESCRIPTION q 64K x 4 Static RAM with Common I/O q Auto-Powerdown Design q Advanced CMOS Technology q High Speed — to 15 ns maximum q Low Power Operation

Contextual Info: ► DPS1026 64K X 16 CMOS SRAM MODULE Dense-Pac Microsystems, Inc. 0 NOT RECOMMENDED FOR NEW DESIGNS DESCRIPTION: The DPS1026 is a 64K X 16 high-speed, low-power static RAM module comprised of sixteen 64K X 1 monolithic SRAM 's, and decoupling capacitors surface mounted on a thick film ceramic substrate.

Contextual Info: IDT 7MP456 256K 64K x 4-BIT C M O S STATIC RAM PLASTIC SIP M ODULE FEATURES: DESCRIPTION: • High-density 256K (64K x 4) CMOS static RAM module The IDT7MP456 is a 256K (64K x 4-bit) high-speed static RAM m odule constructed on an epoxy laminate surface using four

Contextual Info: □PM DPS8645 Dense-Pac Microsystems, Inc. 64K X 4 CMOS SRAM MODULE O NOT RECOMMENDED FOR NEW DESIGNS DESCRIPTION: The DPS8645 is a 64K X 4 high-speed, low-power static RAM module comprised of four 64K X 1 monolithic SRAM's, and decoupling capacitors surface mounted on a single inline thick film ceramic

7187L55

Abstract: 7187L45
Contextual Info: IDT7187S IDT7187L CMOS Static RAM 64K 64K x 1-Bit Description Features ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ The IDT7187 is a 65,536-bit high-speed static RAM organized as 64K x 1. It is fabricated using IDT’s high-performance, high-reliability CMOS technology. Access times as fast as 25ns are available.

Contextual Info: i Integrated DeviceTechnolc>3y Inc 256K 64K x 4-BIT CM O S STATIC RAM PLASTIC SIP M O DULE IDT7MP456 FEATURES: DESCRIPTION: • High-density 256K (64K x 4) CMOS static RAM module The IDT7MP456 is a 256K (64K x 4-bit) high-speed static RAM module constructed on an epoxy laminate surface using four

Contextual Info: EbE D LOGIC DEVICES INC WÈ SSbSTQS O O O I H G LMM624 1 Megabit 64K x 16-bit Static RAM Module DESCRIPTION FEATURES □ IM egabit (64K x 16-bit) Static RAM M odule □ Utilizes 16 L7C187 64K x 1 Static RAMs □ A dvanced CMOS Technology Q H igh Speed, Low Pow er

Contextual Info: 27C512 Microchip 512K 64K x 8 CMOS EPROM DESCRIPTION FEATURES The Microchip Technology Inc 27C512 is a CMOS 512K • High speed performance bit (electrically) P rogramm able Read Only Memory. The — 90ns access tim e available device is organized into 64K words by 8 bits (64K bytes).

Contextual Info: CY7C093794V CY7C093894V CY7C09289V CY7C09369V CY7C09379V CY7C09389V3.3V 64K/128K x 36 and 128K/256K x 18 Synchronous Dual-Port RAM CY7C0837V CY7C0830V/CY7C0831V CY7C0832V/CY7C0833V PRELIMINARY FLEx18TM 3.3V 32K/64K/128K/256K/512K x 18 Synchronous Dual-Port RAM

CY7C09289V

Abstract: CY7C09369V CY7C09379V A12R-A11R
Contextual Info: CY7C093794V CY7C093894V CY7C09289V CY7C09369V CY7C09379V CY7C09389V3.3V 64K/128K x 36 and 128K/256K x 18 Synchronous Dual-Port RAM CY7C0850V/CY7C0851V CY7C0852V/CY7C0853V FLEx36TM 3.3V 32K/64K/128K/256K x 36 Synchronous Dual-Port RAM Features Functional Description

Contextual Info: STATIC SRAM RAM Random Access Memory 8Kx8 64K QA SOP LH5164AN

MN101E31D

Contextual Info: MN101E31 Series MN101E31D Type MN101E31G 64K 128K RAM byte 4K 6K Minimum Instruction Execution Time MN101EF31G FLASH ROM (byte) Package (Lead-free) MN101EF31D Mask ROM Internal ROM type 64K 128K 4K 6K LQFP080-P-1414A LQFP080-P-1414A (ES (Engineering Sample)

9l reset

Abstract: CY7C0852V-133AC CY7C09289V CY7C09369V CY7C09379V
Contextual Info: CY7C093794V CY7C093894V CY7C09289V CY7C09369V CY7C09379V CY7C09389V3.3V 64K/128K x 36 and 128K/256K x 18 Synchronous Dual-Port RAM CY7C0851V/CY7C0852V CY7C0831V/CY7C0832V 3.3V 64K/128K x 36 and 128K/256K x 18 Synchronous Dual-Port RAM Features Functional Description

62WV6416ALL

Abstract: IS62WV6416BLL-45BLI IS62WV6416ALL IS62WV6416BLL IS62WV6416ALL-55TLI
Contextual Info: IS62WV6416ALL IS62WV6416BLL 64K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM JANUARY 2008 FEATURES DESCRIPTION • High-speed access time: 45ns, 55ns The ISSI IS62WV6416ALL/ IS62WV6416BLL are highspeed, 1M bit static RAMs organized as 64K words by 16

CY62126

Abstract: 0/7C62126/7V
Contextual Info: Cypress Semiconductor Product Qualification Report QTP# 99387 VERSION 1.1 June, 2000 R52D-3 Technology , Fab 4 CY62126 64K x 16 Static RAM CY62127 64K x 16 Static RAM CYPRESS TECHNICAL CONTACT FOR QUALIFICATION DATA: Ed Russell Reliability Manager 408 432-7069