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    OLIN194 Search Results

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    Infineon diffusion solder

    Abstract: Cu6Sn5 C1870 equivalent transistor of C1870 Olin-194 C70250 C19400 C14415 F-38019 OLIN194
    Contextual Info: Tin Whiskers on Lead-free Platings P.J.T.L. Oberndorff1, M. Dittes2, L. Petit3, C.C. Chen4, J. Klerk1 and E.E. de Kluizenaar1 Philips, Centre for Industrial Technology, P.O. Box 218, 5600 MD Eindhoven, the Netherlands, pascal.oberndorff@philips.com 2 Infineon Technologies AG, P.O. Box 1000944, D-93009 Regensburg, Germany, marc.dittes@infineon .com


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    d-93009f-38019infineon diffusion soldercu6sn5+7c1870equivalent transistor of c1870olin-194c70250c19400c14415olin194 PDF

    C18070

    Abstract: Atotech c14415 Cu6Sn5 C18090 olin 194 Olin-194 CuCrSiTi Cu3Sn FeNi42
    Contextual Info: Whisker Formation on Tin Plated Cu based Leadframes Results and Conclusion 29 October 2004 Content • • • • • Introduction Experience E4 Main cause whisker growth on Cu LF Countermeasures Conclusions Introduction Period of potential whisker growth


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    feni42st-150st-200150oc+9c18070atotechc14415cu6sn5c18090olin 194olin-194cucrsiticu3sn PDF

    Cu6Sn5

    Abstract: Olin-194
    Contextual Info: Whisker on Cu 06-June-03 Back Up Block 1 Whisker on Cu Whisker on Cu 06-June-03 Storage conditions • Test data showed that whiskers grow longest at room temperature Explanation: irregular intermetallic growth 1,9 µm ambient 250 1,9 µm 55 °C / ambient


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    06-june-03cu6sn5olin-194 PDF

    Olin-194

    Abstract: 6 mil poly vapor barrier olin194 CY7C191 CY7C192 CY7C194 CY7C195 CY7C196 CY7C197 CY7C198
    Contextual Info: Qualification Report March, 1997 QTP# 94052 Version 1.1 256K SRAM, RAM 2.5 TECHNOLOGY, 7% SHRINK MARKETING PART NUMBER DEVICE DESCRIPTION CY7C191 64K x 4 Separate IO with transparent write CY7C192 64K x 4 Separate IO without transparent write CY7C194 64K x 4 Common IO with no OE


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    cy7c191cy7c192cy7c194cy7c195+8cy7c196cy7c197cy7c198cy7c199semicondu1000olin-1946 mil poly vapor barrierolin194 PDF