64K (8K X 8) RAM Search Results

Contextual Info: M $ 28LV64A ic r o c h ip 64K 8K x 8 Low Voltage CMOS EEPROM FEATURES PACKAGE TYPES BLOCK DIAGRAM DESCRIPTION 100. U07 The Microchip Technology Inc. 28LV64A is a CM O S 64K non-volatile electrically Erasable PROM organized as 8K words by 8 bits.

idt8m864

Abstract: IDT7m864 7m864 IDT6116 8M864 idt6116s
Contextual Info: IDT7M864 IDT8M864 6 4 K 8K X 8 C M O S STATIC RA MPAK 64K RAM PAK FEATURES: • Equivalent to JEDEC standard 8K x 8 monolithic RAM • 8,192 x 8 CMOS static RAM module complete w ith decoder and decoupling capacitor _ • High-speed 65 (commercial only) 75/85/120/150/200ns

X28C64

Abstract: X2864A X28C64-15 X28C64-20 X28C64-25 X28C64I X28HC64
Contextual Info: X28C64 X28C64 64K 8K x 8 Bit 5 Volt, Byte Alterable E2PROM FEATURES DESCRIPTION • • The X28C64 is an 8K x 8 E2PROM, fabricated with Xicor’s proprietary, high performance, floating gate CMOS technology. Like all Xicor programmable nonvolatile memories the X28C64 is a 5V only device. The

IDT7M134

Contextual Info: I CMOS SLAVE DUAL-PORT RAM MODULE 64K 8K x 8-BIT & 128K (16Kx 8-BIT) Integrated D evice Technology. Inc IDT7M144S IDT7M145S FEATURES: DESCRIPTION: • High-density 64K/128K-bit CMOS SLAVE dual-port RAM modules • Easily expands data bus width to 16-or-more-bits when used

28C64A-15

Abstract: 28C64A ic 8870 ttl
Contextual Info: 28C64A 64K 8K x 8 CMOS EEPROM DESCRIPTION The Microchip Technology Inc. 28C64A is a CMOS 64K nonvolatile electrically Erasable PROM. The 28C64A is accessed like a static RAM for the read or write cycles without the need of external components. During a “byte write”, the

32-PIN

Abstract: DS1216B
Contextual Info: DS1216B SmartWatch/RAM 16K/64K www.dalsemi.com PIN ASSIGNMENT FEATURES § Keeps track of hundredths of seconds, seconds, minutes, hours, days, date of the month, months, and years § Converts standard 2K x 8 and 8K x 8 CMOS static RAMs into nonvolatile memory

Contextual Info: Advance information •■ AS29LL800 II 2.2V 1Mx 8/512Kx 16 CMOS Flash EE PROM Features •O rganization: 1M x 8 / 5 1 2 K x 16 • Sector architecture - O ne 16K; tw o 8K; one 32K; and fifteen 64K byte sectors - O ne 8K; tw o 4K; one 16K; and fifteen 32K w o rd sectors

DS1213B

Abstract: J-STD-020A
Contextual Info: DS1213B SmartSocket 16k/64k www.dalsemi.com FEATURES PIN ASSIGNMENT Accepts standard 2K x 8 or 8K x 8 CMOS static RAMs Embedded lithium energy cell retains RAM data Self-contained circuitry safeguards data Data retention time is greater than 10 years with proper RAM selection

Contextual Info: ¿ 7 7 S C S -T H O M S O N *7 # R 0»[l[L[l g™ R!]D(êi 64K (8K MK48H74(N, P, E -35/45/55 x 8-BIT) CMOS TAG RAM11 • 8K x 8 CMOS SRAM WITH ONBOARD 8-BIT COMPARATOR ■ ADDRESS TO COMPARE ACCESS 35/45/55ns ■ FAST CHIP SELECT TO COMPARE ACCESS 20/25/30ns

DDCH715

Abstract: LH5168SHN
Contextual Info: SHARP CORP LH5168SH FEATURES • 8,192 x 8 bit organization • Access time: 500 ns MAX. • Low-current consumption: Operating: 20 mA (MAX.), ]> CMOS 64K (8K The LH5168SH is a static RAM organized as 8,192 x 8 bits. It is fabricated using silicon-gate CMOS

Contextual Info: M 28C64A ic r o c h ip 64K 8K x 8 CMOS EEPROM FEATURES -40°C to +85°C DESCRIPTION The Microchip Technology Inc. 28C64A is a CMOS 64K non­ volatile etectricaly Erasable PROM. The 28C64A is accessed ike a static RAM for the read orwrite cycles without

Contextual Info: /S T S G S -T H O M S O N MK48S74 N,X -20/22/25 MK48S75(N)-20/22/25 64K (8K x 8-BIT) FAST CMOS TAGRAM A D V A N C E DATA . 8K x 8 CMOS SRAM WITH ONBOARD COM ­ PARATOR • ADDRESS TO COMPARE ACCESS 20/22/25ns ■ FAST CHIP SELECT TO COMPARE ACCESS 15ns

7M135

Contextual Info: CMOS DUAL-PORT RAM MODULE 64K 8K x 8-BIT & 128K (16Kx 8-BIT) FEATURES: • H ig h -d e n sity 6 4 K /1 28 K -b it C M O S d u a l-p o rt RAM m o du le s • 16K x 8 o rg a n iza tio n (ID T7M 135) w ith 8K x 8 o p tio n (IDT7M 134) • Low p o w e r co n su m p tio n

DS1220AB-85

Abstract: DS1220AD-85 DS1225 DS1225AB DS1225AB-70 DS1225AD ICC01 2764 EPROM EEPROM 2864 ram DS1225
Contextual Info: DS1225AB/AD 64k Nonvolatile SRAM www.dalsemi.com FEATURES PIN ASSIGNMENT 10 years minimum data retention in the absence of external power Data is automatically protected during power loss Directly replaces 8k x 8 volatile static RAM or EEPROM Unlimited write cycles

0-022O

Abstract: AN78
Contextual Info: BiCMOS STATIC RAM 64K 8K x 8-BIT CACHE-TAG RAM IDT71B74 Integrated D evice Technology, Inc. FEATURES: DESCRIPTION: • High-speed address to M ATCH comparison time — Commercial: 8/10/12/15/20ns (max.) • High-speed address access time — Commercial: 8/10/12/15/20ns (max.)

Contextual Info: r Z T SGS-THOMSON ^ 7 # . raoWUtLUteTOIiilDei M48T08 M48T18 64K 8K x 8 TIMEKEEPER INTEGRATED ULTRA LOW POWER SRAM, REALTIME CLOCK, POWER-FAIL CONTROL CIRCUIT and BATTERY BYTEWIDE RAM-LIKE CLOCK ACCESS BCD CODED YEAR, MONTH, DAY, DATE, HOURS, MINUTES and SECONDS

Contextual Info: DS1216B DALLAS SEMICONDUCTOR FEATURES DS1216B SmartWatch/RAM 16K/64K PIN ASSIGNMENT • Keeps track of hundredths of seconds, seconds, m in­ utes, hours, days, date of the month, months, and years 1 28 Vcc 2 27 WE 3 26 Vcc 4 25 RST • Converts standard 2K x 8 and 8K x 8 CM OS static

Contextual Info: BiCMOS HIGH-SPEED STATIC RAM 64K 8K x 8-BIT ADVANCE INFORMATION IDT71B64 Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • 8192-w ords x 8-bits organization • JE D E C standard 28-pin D IP , S O J, and 32-pin LCC • Fast access time: — Com mercial: 1 0 /1 2 /1 5ns (max.)

Contextual Info: September 1990 Edition 1.0 FUJITSU DATA SHEET MB8441-45/-55 CMOS 64K-BIT DUAL PORT SRAM 8K X 8 Bits CMOS Dual Port Static Random Access Memory The Fujitsu MB8441 is a dual-port high-performance static random access memory SRAM organized as 8,192 words x 8 bits and fabricated using CMOS technology.

5164SL-10

Contextual Info: ini@ i 5164SL 64K 8K x 8 CMOS SLOW STATIC RAM • Performance Range Symbol Parameter 5164SL-10 Units tAA Address Access Time 100 ns tACS Chip Select Access Time 100 ns tOE Output Enable Access Time 55 ns ■ Static Operation — No Clock/Refresh Required

28C64AP

Abstract: 28C64A 28C64APC-2 hex55 ROM 8K x 8
Contextual Info: Turbo IC, Inc. 28C64A HIGH SPEED CMOS 64K ELECTRICALLY ERASABLE PROGRAMMABLE ROM 8K X 8 BIT EEPROM FEATURES: • 120 ns Access Time • Automatic Page Write Operation Internal Control Timer Internal Data and Address Latches for 64 Bytes • Fast Write Cycle Times

X28HC64p-12

Abstract: EEPROM X28HC64P-12 FN8109 X28HC64 X28HC64EM-70 X28HC64J-70 X28HC64JI-70 X28HC64JIZ-70 X28HC64JZ-70 X28HC64KM-70
Contextual Info: X28HC64 64K, 8K x 8 Bit Data Sheet June 7, 2006 5 Volt, Byte Alterable EEPROM FN8109.1 • High reliability —Endurance: 1 million cycles —Data retention: 100 years • JEDEC approved byte-wide pin out • Pb-free plus anneal available RoHS compliant

Contextual Info: t>3E D • bl03201 D0D7540 Mflñ IMCHP MICROCHIP TECHNOLOGY INC 28C64A Q M icrochip 64K 8K x 8 CMOS Electrically Erasable PROM FEATURES DESCRIPTION • Fast Read Access Time— 150ns • CMOS Technology for Low Power Dissipation —30mA Active — 100mA Standby

28LV64

Abstract: 28LV64PC-4 hex55 DSA009112
Contextual Info: Turbo IC, Inc. 28LV64 LOW VOLTAGE CMOS 64K ELECTRICALLY ERASABLE PROGRAMMABLE ROM 8K X 8 BIT EEPROM FEATURES: • 200 ns Access Time • Automatic Page Write Operation Internal Control Timer Internal Data and Address Latches for 64 Bytes • Fast Write Cycle Times