24LV64A Search Results

28LV64A

Abstract: DK-2750
Contextual Info: Obsolete Device 28LV64A 64K 8K x 8 Low Voltage CMOS EEPROM 30 NC 32 Vcc 31 WE 2 RDY/BSY 1 NU 29 A8 28 A9 27 A11 26 NC 25 OE 24 A10 23 CE 22 I/O7 20 19 18 17 16 21 I/O6 15 Vcc WE NC A8 A6 5 A9 A5 6 A11 A4 7 A3 8 OE A10 A2 9 A1 10 CE A0 11 I/O7 NC 12 I/O6

tdb 0139

Abstract: VSOP 28 28LV64A ic 8870 ttl
Contextual Info: 28LV64A 64k 8k x 8 CMOS EEPROM FEATURES BLOCK DIAGRAM I/O0.I/O7 • Read Access Time—300 ns • CMOS Technology for Low Power Dissipation – 8 mA Active – 50 µA CMOS Standby Current • Byte Write Time—3 ms • Data Retention >200 years

tdb 0139

Abstract: 28LV64A 5060 PLCC A4-A38
Contextual Info: 28LV64A 64K 8K x 8 Low Voltage CMOS EEPROM 30 NC 32 Vcc 31 WE 2 RDY/BSY 1 NU 29 A8 28 A9 27 A11 26 NC 25 OE 24 A10 23 CE 22 I/O7 20 19 18 17 16 21 I/O6 15 Vcc WE NC A8 A6 5 A9 A5 6 A11 A4 7 A3 8 OE A10 A2 9 A1 10 CE A0 11 I/O7 NC 12 I/O6 I/O0 13 I/O5 I/O4

200B

Abstract: 28LV64A DK-2750 RG41
Contextual Info: 28LV64A 64K 8K x 8 Low Voltage CMOS EEPROM 30 NC 32 Vcc 31 WE 2 RDY/BSY 1 NU 29 A8 28 A9 27 A11 26 NC 25 OE 24 A10 23 CE 22 I/O7 20 19 18 17 16 21 I/O6 15 Vcc WE NC A8 A6 5 A9 A5 6 A11 A4 7 A3 8 OE A10 A2 9 A1 10 CE A0 11 I/O7 NC 12 I/O6 I/O0 13 I/O5 I/O4

BD 9883

Contextual Info: M 28LV64A ic r o c h ip 64k 8k x 8 CMOS EEPROM FEATURES BLOCK DIAGRAM • Read Access Time— 300 ns • CMOS Technology for Low Power Dissipation - 8 mA Active - 50 |iA CMOS Standby Current • Byte Write Time— 3 ms • Data Retention >200 years • High Endurance - Minimum 100,000 Erase/Write

Contextual Info: m 28LV64A IC R O C H IP 64K 8K x 8 Low Voltage CMOS EEPROM FEATURES PACKAGETYPES • 2.7V to 3.6V Supply • Read Access Time— 300 ns • CMOS Technology for Low Power Dissipation - 8 mA Active - 50 |^A CMOS Standby Current • Byte Write Time— 3 ms

TIC 593-4

Contextual Info: M ic r o c h ip 2 8 L V 6 4 A 64K 8K x 8 Low Voltage CMOS EEPROM FEATURES PACKAGE TYPES • 2 .7 V to 3 .6 V S u p p ly • R e a d A c c e s s T im e — 3 0 0 ns • C M O S T e c h n o lo g y fo r L o w P o w e r D is s ip a tio n RDY/BSY C • 1 28 □ Vcc

200B

Abstract: 28LV64A DK-2750 RG41
Contextual Info: 28LV64A 64K 8K x 8 Low Voltage CMOS EEPROM 30 NC 32 Vcc 31 WE 2 RDY/BSY 1 NU 29 A8 28 A9 27 A11 26 NC 25 OE 24 A10 23 CE 22 I/O7 20 19 18 17 16 21 I/O6 15 Vcc WE NC A8 A6 5 A9 A5 6 A11 A4 7 A3 8 OE A10 A2 9 A1 10 CE A0 11 I/O7 NC 12 I/O6 I/O0 13 I/O5 I/O4

Contextual Info: M $ 28LV64A ic r o c h ip 64K 8K x 8 Low Voltage CMOS EEPROM FEATURES PACKAGE TYPES BLOCK DIAGRAM DESCRIPTION 100. U07 The Microchip Technology Inc. 28LV64A is a CM O S 64K non-volatile electrically Erasable PROM organized as 8K words by 8 bits.

Contextual Info: Obsolete Device 28LV64A 64K 8K x 8 Low Voltage CMOS EEPROM FEATURES 30 NC 32 Vcc 31 WE 2 RDY/BSY 1 NU 29 A8 28 A9 27 A11 26 NC 25 OE 24 A10 23 CE 22 I/O7 20 19 18 17 16 15 21 I/O6 14 Vcc WE NC A8 A6 5 A9 A5 6 A11 A4 7 A3 8 OE A10 A2 9 A1 10 CE A0 11 I/O7

Contextual Info: 2Ô LV64A 64K 8K x 8 Low Voltage CMOS EEPROM FEATURES • 2.7V to 3.6V Supply • Read Access Time— 300 ns • CMOS Technology for Low Power Dissipation - 8 mA Active - 50 nA CMOS Standby Current • Byte Write Time— 3 ms • Data Retention >200 years

Contextual Info: 28LV64A 64K 8K x 8 Low Voltage CMOS EEPROM 30 NC 32 Vcc 31 WE 2 RDY/BSY 1 NU 29 A8 28 A9 27 A11 26 NC 25 OE 24 A10 23 CE 22 I/O7 20 19 18 17 16 21 I/O6 15 Vcc WE NC A8 A6 5 A9 A5 6 A11 A4 7 A3 8 OE A10 A2 9 A1 10 CE A0 11 I/O7 NC 12 I/O6 I/O0 13 I/O5 I/O4