CLZ1 Search Results

UM62*512

Contextual Info: UM62L512 Series 6 4 K X 8 LOW VOLTAGE CMOS SRAM PRELIMINARY Features • Single + 3.3V power supply ■ Access times: 70/100 ns max. * Current: Low power version: Operating: 40mA ■ Directly TTL compatible: All inputs and outputs ■ Comm on I/O using three-state output

UM621024B

Abstract: UM621024 um621024bm-70l
Contextual Info: UM621024B Seríes 128K X 8 CMOS SRAM Features • Single +5V power supply ■ Access times: 55/70 ns max. ■ Current: Low power version: Operating: 70mA Standby: 100(iA Very low power version: Operating: 70mA Standby: 25 (¿A * Full static operation, no clock or refreshing

UM61M512K-15

Abstract: UM61M512K15 UM61M512 um61M512K UM61M512-20 um61m UM61M51
Contextual Info: UM61M512 Seríes 64KX 8, 3.3V I/O High Speed CMOS SRAM Features • Single +5V power supply * Access times: 15/20 ns max. ■ Current: Operating: 160mA (max.) Standby. 10mA (max.) ■ Full static operation, no clock or refreshing required ■ 3.3V I/O com patible

SRM20100LRM70

Contextual Info: SRM20100l_7o/85/io CMOS 1M-BIT STATIC RAM • Low Supply Current • Access Time 70ns/85ns/100ns • 131,072 Words x 8-Bit Asynchronous DESCRIPTION The SRM201 OOI_7o/85/ic is a 131,072 words x 8-bit asynchronous, static, random access memory on a monolithic

Contextual Info: CMOS STATIC RAM 64K 8K x 8-BIT IDT7164S IDT7164L Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • H igh-speed ad dress/chip se le ct access tim e — M ilitary: 20 /25/3 0/35 /45/55/7 0/85 ns (m ax.) — C om m ercia l: 15/2 0/25 /30/35ns (m ax.)

HM628100LTTI-5SL

Abstract: A17a
Contextual Info: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog

MB8421

Contextual Info: July 1990 Edition 3.0 FUJITSU DATA SHEET : MB8421/8422-90/-90U-90LU-12/-12U-12LL CMOS 16K-BIT DUAL-PORT SRAM 2K x 8 Bits CMOS Dual-Port Static Random Access Memory The Fujitsu MB8421 and MB8422 are 2,048 words x 8 bits dual-port high-performance static random access memories SRAMs fabricated in CMOS. The SRAMs use

87c809

Abstract: BM11122 87C409 87P809 BM11116 TC57256AD TMP87P809M TMP87P809N DIP28-P-400-1
Contextual Info: TO SHIBA TMP87P809 UNDER DEVELOPMENT CMOS 8-BIT MICROCONTROLLER TMP87P809N/M The 87P809 is a high-speed, high-performance 8-bit single chip microcomputer, which has 64K bits One-Time PROM. The 87P809 is pin compatible with the 87C409/809. The operations possible with the 87C409/809 can

Murata SFr 450 filter

Contextual Info: TOSHIBA TMP87C409B/809B CMOS 8-bit Microcontroller TMP87C409BN, TM P87C409BM , TMP87C809BN, TMP87C809BM The TMP87C409B/809B are the high speed and high performance 8-bit single chip microcomputers. These MCU contain CPU core, ROM, RAM, input/output ports, three multi-function timer/counters, a 10-bit AD

Contextual Info: VZÀ WHITE /M IC R O E L E C T R O N IC S 128Kx16 SRAM/FLASH MODULE WSF128K16-XXX P R E LIM IN A R Y * FEATURES FLASH MEM ORY FEATURES • Access Times of 35nS SRAM and 70nS (FLASH) ■ 10,000 Erase/Program Cycles ■ Access Times of 70nS (SRAM) and 120nS (FLASH)

Murata SFr 450 filter

Contextual Info: TOSHIBA TMP87C409B/809B CMOS 8-bit Microcontroller TMP87C409BN, TM P87C409BM , TMP87C809BN, TMP87C809BM The TMP87C409B/809B are the high speed and high performance 8-bit single chip microcomputers. These MCU contain CPU core, ROM, RAM, input/output ports, three multi-function timer/counters, a 10-bit AD

Contextual Info: Very Low Power CMOS SRAM 512K X 16 bit BS616LV8016 Pb-Free and Green package materials are compliant to RoHS n FEATURES n DESCRIPTION Ÿ Wide VC C operation voltage : 2.4V ~ 5.5V Ÿ Very low power consumption : VCC = 3.0V Operation current : 31mA Max. at 55ns

BS62LV1025

Contextual Info: BSI Very Low Power/Voltage CMOS SRAM 128K X 8 bit BS62LV1025 „ FEATURES „ DESCRIPTION • Vcc operation voltage : 4.5V ~ 5.5V • Very low power consumption : Vcc = 5.0V C-grade : 35mA Max. operating current I- grade : 40mA (Max.) operating current 0.4uA (Typ.) CMOS standby current

Contextual Info: Very Low Power CMOS SRAM 1M X 8 bit BS62LV8001 Pb-Free and Green package materials are compliant to RoHS n FEATURES n DESCRIPTION Ÿ Wide VC C operation voltage : 2.4V ~ 5.5V Ÿ Very low power consumption : VCC = 3.0V Operation current : 31mA Max. 2mA (Max.)

Contextual Info: Very Low Power CMOS SRAM 2M X 8 bit BS62LV1600 Pb-Free and Green package materials are compliant to RoHS n FEATURES n DESCRIPTION Ÿ Wide VC C operation voltage : 2.4V ~ 5.5V Ÿ Very low power consumption : VCC = 3.0V Operation current : 46mA Max. at 55ns

rs780

Abstract: CL-194S CPI-210 SMD LS30 C0806 CL-150 CL-165 CL-170 CL-190 CL-191
Contextual Info: テーピング仕様 日本規格協会 JIS C 0806に準ずる（単位mm The specification are in-accordance with JIS standard C0806 Unit:mm) ●●●●●●●● CL-170 包装数量 3,000個/1リール（φ180mm） Loaded quantity per reel:3,000pcs./reel(φ180mm)

RS780

Abstract: lathe machine electric circuit CL-591S CL-194S LED WHITE hight efficiency CL-197HB Photointerrupter for pc mouse CL-503 toshiba car audio catalog CL-421S-G
Contextual Info: ●●●●●●●●●●●●●●●●●●●●●●●●● 目次 Table Of Contents シチズン電子製品のコンセプト Concept of Our

pd 3174

Abstract: ACS35
Contextual Info: 256K 256K x 1-BIT CMOS STATIC RAM PLASTIC SIP MODULE ID T 7 M P 1 5 6 FEATURES: DESCRIPTION • High-density 256K (256K x 1) CMOS static RAM module The IDT7MP156 is a 256K (256K x 1-bit) high-speed static RAM module constructed on an epoxy laminate surface using four

Hitachi DSA00176

Contextual Info: HM62V16256B シリーズ 4M SRAM 256-kwordx16-bit ADJ-203-334C (Z) Rev. 2.0 ’99. 10. 14 概要 HM62V16256B シリーズは， 262144 ワード × 16 ビット構成の 4M ビットスタティック RAM です。 Hi-CMOS プロセス技術を 採用し，高密度，高性能，低消 費電力を実現しております。し たがって，HM62V16256B シ

Hitachi DSA00176

Contextual Info: HM62W16256B シリーズ 4M SRAM 256-kwordx16-bit ADJ-203-335C (Z) Rev. 2.0 ’99. 10. 14 概要 HM62W16256B シリーズは， 262144 ワード × 16 ビット構成の 4M ビットスタティック RAM です。 Hi-CMOS プロセス技術を採用し，高密度，高性能，低消費電力を実現しております。したがって HM62W16256B シリ

m6264

Abstract: Truth Table 7483 SOP-28L UM6264-10 UM6264 UNITED MICROELECTRONICS CORPORATION UM6264-12L um6264-12 UM6264K-10L
Contextual Info: 2ûS-l% ^ UM 6264 Seríes 8KX 8 CMOS SRAM Lu-f ¿ » a f e ^ - a i Features • ■ ■ ■ ■ ■ Single + 5 v o lt pow er supply Access times: 7 0 /1 0 0 /1 2 0 ns m ax. Current: Standard version: O perating: 9 0 m A (m ax.)

Contextual Info: IDT 7MP456 256K 64K x 4-BIT C M O S STATIC RAM PLASTIC SIP M ODULE FEATURES: DESCRIPTION: • High-density 256K (64K x 4) CMOS static RAM module The IDT7MP456 is a 256K (64K x 4-bit) high-speed static RAM m odule constructed on an epoxy laminate surface using four

BS62LV1023

Abstract: BS62LV1023DC BS62LV1023JC BS62LV1023PC BS62LV1023SC BS62LV1023SI BS62LV1023STC BS62LV1023STI BS62LV1023TC BS62LV1023TI
Contextual Info: BSI Very Low Power/Voltage CMOS SRAM 128K X 8 bit „ DESCRIPTION „ FEATURES • Vcc operation voltage : 2.4V ~ 3.6V • Very low power consumption : Vcc = 3.0V C-grade : 20mA Max. operating current I- grade : 25mA (Max.) operating current 0.02uA (Typ.) CMOS standby current

Hitachi DSA002746

Contextual Info: HM62W16256B Series 4 M SRAM 256-kword x 16-bit ADE-203-934B (Z) Rev. 1.0 March 8, 1999 Description The Hitachi HM62W16256B Series is 4-Mbit static RAM organized 262,144-word × 16-bit. HM62W16256B Series has realized higher density, higher performance and low power consumption by