60N60 IGBT Search Results

60N60

Contextual Info: IXGH 60N60 IXGK 60N60 IXGT 60N60 Ultra-Low VCE sat IGBT VCES ^C25 V C E(sat) V A V 600 75 1.6 Preliminary data sheet Symbol Test Conditions Maximum Ratings VCES T j = 2 5 °C to 150°C 600 V Vcon T,J = 2 5 ° C to 15 0 °C; R„_ be = 1 MO 600 V v GES Continuous

ic 307 ex

Abstract: 60N60 97521E
Contextual Info: Ultra-Low VCE sat IGBT IXGN 60N60 VCES = 600 V IC25 = 100 A VCE(sat) = 1.7 V Preliminary data sheet E Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 V VGES Continuous ±20 V VGEM Transient

Contextual Info: Ultra-Low VCE sat IGBT IXGN 60N60 VCES = 600 V IC25 = 100 A VCE(sat) = 1.7 V Preliminary data sheet E Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 V VGES Continuous ±20 V VGEM Transient

ixgh 1500

Abstract: 40N60A 25N120 200n60 60n60 igbt smd 30n60 10N60A 30N60A .25N100 20n60a
Contextual Info: Insulated Gate Bipolar Transistors IGBT G series with high gain V•CSS : ■■ Type . TJm = 15° CC > New ► IXGA IXGH IXGH IXGH IXGH IXGH IXGH IXGH 10N60 10N60 20N60 31N60 30N60 38N60 40N60 60N60 IXGH 10N100 >■ IXGA 12N100 > IXGH 12N100 > ► >•

60N60

Abstract: 60n60 igbt 60n6 v5ac
Contextual Info: Ultra-Low VCE sat IGBT IXGH 60N60 VCES IC25 VCE(sat) Maximum Ratings TO-247 AD Symbol Test Conditions VCES T J = 25°C to 150°C 600 V VCGR T J = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 T C = 25°C, limited by leads

Contextual Info: Ultra-Low VCE sat IGBT VCES IXGN 60N60 ^C25 VCE(sat) 600 V 100 A 1.6 V Preliminary data sheet Symbol Test Conditions Maximum Ratings VcES T j =2 5°C to 15 0 cC 600 V v CGR T,J = 25°C to 150°C; R(jfc = 1 MO 600 V VGES Continuous ±20 V VGEM Transient +30

Contextual Info: □ IXYS Ultra-Low VCE sat „, „ IGBT ix g n V CES 60N60 ^C25 V CE(sat) 600 V 100 A 1.6 V Preliminary data sheet Maximum Ratings Symbol Test Conditions VCES Td = 25°C to 150°C 600 V VCGR Td = 25°C to 150°C; RGE = 1 M£i 600 V v GES Continuous ±20

60n60 igbt

Abstract: ic 307 ex 60N60
Contextual Info: Ultra-Low VCE sat IGBT IXGN 60N60 VCES = 600 V IC25 = 100 A VCE(sat) = 1.7 V Preliminary data sheet E Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 V VGES Continuous ±20 V VGEM Transient

MOSFET 60n60

Abstract: 60N60 transistor 60N60 TAB 429 H
Contextual Info: HiPerFETTM Power MOSFETs Single Die MOSFET IXFN 60N60 VDSS ID25 RDS on = 600 V = 60 A = 75 mW D N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr G Preliminary data S S Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 600 V VDGR

Contextual Info: □ IXYS Advanced Technical Information IXFN 60N60 HiPerFET Power MOSFETs Single Die M OSFET VDSS ^D25 D DS on = 600 V = 60 A = 75 mQ N-Channel Enhancement Mode Avalanche Rated, Highdv/dt, Lowtrr s Maximum Ratings Symbol Test C onditions V DSS Td = 25°C to 150°C

Contextual Info: HiPerFETTM Power MOSFETs Single Die MOSFET IXFN 60N60 VDSS ID25 RDS on = 600 V = 60 A = 75 mW D N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr G Preliminary data S S Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 600 V VDGR

1xys

Abstract: 90a944
Contextual Info: Ultra-Low VCE sat IGBT IXGN 60N60 VCES ^C25 VCE(sat) Symbol Test Conditions V CES TJ = 25°C to 150°C 600 V v CGR Tj = 25°C to 150°C; RGE = 1 MU 600 V V GES Continuous ±20 V v GEM Transient +30 V ^C25 Tc = 25°C 100 A ^C90 Tc = 90°C 60 A •cm Tc 200

ixgn60n60

Contextual Info: H Î Y Y ^JLsIk»!? flHVw AUltra-Low VCE sat IGBT ixgn vCES 60N60 ^C25 VCE(sat) 600 V 100 A 1.6 V Preliminary data sheet Maximum Ratings Symbol Test Conditions V CES Td = 25°C to 150°C 600 V V CGR Td = 25°C to 150°C; RGE = 1 MQ 600 V v GES Continuous

60N60

Abstract: G 60N60
Contextual Info: ID1XYS Ultra-Low VCE sat IGBT IXGH 60N60 v v CES ^C25 Symbol Test Conditions Maximum Ratings v*C E S v CGR Tj = 25°C to 150°C 600 V ^ = 25DC to 150°C; RGE = 1 M£2 600 V v GES v GEM Continuous ±20 V Transient ±30 V ^C25 Tc = 25°C, limited by leads 75

ixfn60n60

Contextual Info: Advanced Technical Information IXFN 60N60 HiPerFETTM Power MOSFETs Single Die MOSFET RDS on G S S Symbol Test Conditions VDSS TJ = 25°C to 150°C 600 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 600 V VGS Continuous ±20 V VGSM Transient ±30 V ID25 TC= 25°C, Chip capability

MOSFET 60n60

Abstract: 60N60 IXFL60N60 Z 728
Contextual Info: HiPerFETTM Power MOSFETs IXFL 60N60 VDSS ISOPLUS264TM = 600 V = 60 A Ω = 80 mΩ ID25 Electrically Isolated Backside RDS(on) Single Die MOSFET Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 600 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ

ge motor 752

Abstract: 60N60 IXGH60N60 60n60 igbt
Contextual Info: H Î Y Y ^JL sIk»!? flH V w A Ultra-Low VCE sat IGBT IXGH/IXGK/IXGT 60N60 V CES I 600 V 75 A 1.6 V C25 V CE(sat) Preliminary data sheet Maximum Ratings Symbol Test Conditions V CES T d = 25°C to 150°C 600 V V CGR T d = 25°C to 150°C; RGE = 1 MQ 600 V

3580J

Contextual Info: Ultra-Low VCE sat IGBT ixg n 60N60 VCES ^C 25 VCE(sat) u Ë oE Test Conditions V «s T, = 25”C to 150°C 600 VcOR ^ 600 V v GES v GEM Continuous ±20 V Transient ±30 V 'c 2 5 Tc =25«C 100 A Tc = 90°C 60 A 200 A l CM = 1 0 0 e 0.8 v CES A 'c 9 0 Maximum Ratings

60N60

Abstract: ixfh 60N60 60n60 igbt IXGH60N60
Contextual Info: Symbol Test Conditions VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C, limited by leads 75 A IC90 TC = 90°C 60 A ICM TC = 25°C, 1 ms 200 A SSOA RBSOA VGE = 15 V, TVJ = 125°C, RG = 10 W

12n60c

Abstract: 60n60 igbt 20N30 diode b242 31N60 ixgk50n60bu1 50n60bd1 Diode 12 b2 120n60 60N60
Contextual Info: HiPerFASTTM IGBT G-Series Contents IGBT VCES V 300 Low VCE sat 600 1000 TO-220 IC VCE(sat) (IXGP) TC = max 25 °C TC=25 °C A V PLUS247 (IXGX) 1.6 1.8 60 1.6 1.8 IXGH 30N30 IXGH 40N30 40 1.7 IXGH 31N60 75 ¬ 1.6 75 ¬ 1.6 ä ä ä IXGH 20N30 IXGH 28N30 TO-268 ISOPLUS247TM

60N60

Abstract: 60n60 igbt transistor 60N60 60n60 ixgh ixfh 60N60
Contextual Info: Symbol Test Conditions VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C, limited by leads 75 A IC90 TC = 90°C 60 A ICM TC = 25°C, 1 ms 200 A SSOA RBSOA VGE = 15 V, TVJ = 125°C, RG = 10 W

60N60

Abstract: 60n60 igbt ixfh 60N60 IXGH60N60 TO-264 Jedec package outline
Contextual Info: Symbol Test Conditions VCES T J = 25°C to 150°C 600 V VCGR T J = 25°C to 150°C; RGE = 1 MW 600 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C, limited by leads 75 A IC90 TC = 90°C 60 A ICM TC = 25°C, 1 ms 200 A SSOA RBSOA VGE= 15 V, TVJ = 125°C, RG = 10 W

7N60B

Abstract: 65A3 40N60A 60N60 IXGA 12N60C 200n60 ixgh 1500 30N30 IXG IGBT ixgh
Contextual Info: Insulated Gate Bipolar Transistors IGBT G series (high gain, high speed) v CE{Mt) Type T „ = 25°C A = 150°C New t jm > > IXGH 28N30 > 56 60 60_ IXGH 30N30 > IXGH 4QN30 > IXGH 31N60 IXGH IXGH IXGH > IXGN IXGN > IX G A 12N100 IXGH 12N100 IXGP 12N100 28

120n60b

Abstract: 40N30BD1 32N50 7n60c 20N60BU1 40N60A B-2160 200n60 12n60c IXGH24N50B
Contextual Info: Contents IGBT V CE sat 1 TO-220 TO-263 ! TO-247 (IXGP) (IXGA) ! (IXGH) max Tc=25 °C PLUS247 (IXGX) TO-268 (IXGT) TO-264 (IXGK) miniBLOC {IXGN) Page V 300 600 40 56 ► i* G H ¿',N 30 >• IXGH 28N30 60 IXGH 30N30 IXGH 40N30 40 1.7 IXGH 3 ÍN S 0 76 * 75 *