58256 Search Results

Contextual Info: SAMSUNG ELECTRONICS INC 42E D B 7 ^ 4 1 4 5 Q010402 4 58256BN DRAM MODULES u M U 5 -n 25 6K X 8 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM M 58256BN Is a 2 6 2 ,1 4 4 bit X 8 Dynamic RAM high density memory module. The Sam­

Contextual Info: 58256BN DRAM MODULES 2 5 6 K X 8 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM M 58256BN is a 2 6 2 ,1 4 4 bit X 8 Dynamic RAM high density memory module. The Sam­ sung KM M 58256BN consist of two 1M bit DRAMs

cxk58256pm

Abstract: CL 2181 ic CXK58256M CXK58256P gal3 CL 2181 CXK58256 DIP-28P-04
Contextual Info: SONY 58256P/M 0 0 3 2 K-word X 8 bit High Speed CMOS Static RAM Package O utline Description The 58256P/M is a 262.144 bits high speed CMOS static RAM organized as 32 ,7 6 8 w ords by 8 bits and operates from a single 5V supply. The C X K 58256P /M is suitable fo r use in high

44C256BJ

Abstract: O-256K KMM58256BN
Contextual Info: 58256BN DRAM MODULES 256KX8 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM M 58256BN is a 2 6 2 ,1 4 4 bit X 8 Dynamic RAM high density memory module. The Sam­ sung KM M 58256BN consist of two 1M bit DRAMs KM 44C256BJ - 2 5 6 K X 4 in 20-pin SOJ packages

58256

Abstract: 58256a
Contextual Info: HYUNDAI V i SEMICONDUCTOR 58256A 256KX 8-Bit C M O S DRAM MODULE M461201A-APR91 DESCRIPTION FEATURES The 58256A is a 256K words by 8 bits dynamic RAM module and consists of Fast Page mode CMOS DRAMs of two HY534256J in 20/26 pin SOJ mounted on a 30 pin glassepoxy printed circuit board. 0.22|iF decoupling

41C1000

Abstract: fujitsu 814100 TC 55464 toshiba HN62304 hn623257 658128 816b 41c464 hn62324 M7202A
Contextual Info: MEM ORY ICs FUNCTION GUIDE 3. C R O S S REFERENCE GUIDE 3.1 DRAM Density Org. Samsung Mode Toshiba Hitachi Fujitsu H M 51 256 M B 81256 NEC Oki 64K X 1 Page K M 416 4 25 6 K X 1 F. Page KM 41C256 TC 51256 Nibble KM 41C257 TC51257 S. C olu m n KM 41C258 TC 51258

MAGNETICS 77439-A7

Abstract: 55930-A2 55117 core magnetics 77894-A7 77083-A7 55050-A2 55083-A2 Core 55120-A2 55930a2 58930-a2
Contextual Info: Powder Cores • Molypermalloy ■ High Flux ■ Kool Mµ Since 1949, MAGNETICS, a division of Spang & Company, has been a leading world supplier of precision, high quality, magnetic components and materials to the electronics industry. Applications for

Contextual Info: ACCUTEK MICROCIRCUIT 0107^7 3 1 ET D OQOOOCH fi ACU T-46-23-Î7 II AK59256S/AK59256G 262,144 x 9 bit CMOS Dynamic Random Access Memory ACCUTEK MICROCIRCUIT The Accutek AK59256 high density memory module is a random access memory organized in 256K x 9 bit words. The

MPP 55930A2

Abstract: 55050-A2 77083-A7 55120-A2 77894-A7 55930a2 77050-A7 55310-A2 58930-a2 77439-A7
Contextual Info: 0.140” 0.070” 3.56mm OD 1.78mm ID x 1.52mm HT 0.060” Core Dimensions after finish O.D. (max.) I.D. (min) HT. (max.) 4.19 mm 1.27 mm 2.16 mm Permeability (µ) 0.165 in 0.050 in 0.085 in AL +- 8% MPP 13 16 19 26 31 33 36 42 62 55140-AY 55139-AY 55138-AY

41C464

Abstract: 41C1000 TC55B8128 424170 NEC CY70199 44C1000 IOT7164 HN62308BP HN62404P TC5116100
Contextual Info: MEM ORY ICs CRO SS REFERENCE GUIDE 3. C R O SS REFERENCE GUIDE 3.1 DRAM Density 25 6 K Org. X 1 X 4 1M X 1 X 4 4M X 1 X 4 x8 16M M ode Sa m su n g F. Page KM 41C256 TC 51256 N ibble KM 41C257 TC 51257 S. C o lu m n KM 41C258 TC 51258 H M 51 258 MB81258 F. Page

K93C46

Abstract: 93cs46n MB832001 hn62308 41C1000 93C46LN 41464 hn623257 HM63832 DT71256
Contextual Info: MEMORY ICs CROSS REFERENCE GUIDE 3. CROSS REFERENCE GUIDE 3.1 DRAM D ensity 256K X 1 F. P a g e KM 41C 256 TC 51256 X 1 X 4 4M X 1 X 4 , 1 6M To sh iba M od e X 4 1M Sam su ng Org. H ita ch i Fu jitsu HM 51256 M B81256 NEC /iP D 4 1 2 5 6 N ib b le KM 41C 257

odq1

Contextual Info: SAMSUNG SEMICONDUCTOR INC E3E D 7Tfcj 4145 0 0 0 Ô 2 D ? KM M48256/KM 58256 7 MEMORY MODULES 256K x8 Bit DRAM SIP and SIMM Memory Modules T-46,'23-ft FEATURES GENERAL DESCRIPTION • 262,144 x 8-bit Organization • Performance range: The Samsung KMM48256 and 58256 are

TC55B8128

Abstract: KM23C4000AG TC534000AF HN62308BP TC551632 hitachi cross mb83 68512U HITACHI 64k DRAM TC55B4256
Contextual Info: MEMORY ICs CROSS REFERENCE GUIDE 3. CROSS REFERENCE GUIDE 3.1 DRAM D ensity 2 56 K 1M Org. x1 Toshiba F Page T C 51256 N ib b le K M 4 1C 2 5 7 T C 51257 H ita ch i H M 51 2 5 6 — F u jitsu M B 8 12 5 6 M B 8 12 5 7 NEC /P D 41256 — Oki M S M 5 1C 2 5 6

resistor 4.7k ohm

Abstract: resistor* 4.7k ohm resistor 47k ohm SP5000 spectron KTY81 "Signal Conditioning" KTY81-120 SA40011 582567
Contextual Info: SA40011 – Dual Axis Signal Conditioning Module The SA40011- Dual Axis Signal Conditioning Module is a bipolar DC input/output operated device, specifically designed to interface directly with the entire line of SP5000 Series Dual Axis Tilt Sensors. This PC board mountable module internally

d879

Abstract: block diagram of VCD and its functions d879 transistor B1302 block diagram of VCD transistor D879 D1012 LB8118M Sanyo battery 58255
Contextual Info: Ordering number: EN*5825 Monolithic Digital IC LB8118M Actuator Driver for Portable CD Players Preliminary Overview The LB8118M is an actuator driver IC designed for portable CD players that operate at 2.4 V two Ni-Cd batteries or 3.0 V (two dry cells). Because the four-channel driver control outputs

PE 8001A

Abstract: 23C1001 KM41C256P 23C1010 KM41C464P KM68512 km41c256 TFK 805 TFK 001
Contextual Info: MEMORY ICs FUNCTION GUIDE 2. PRODUCT GUIDE 2.1 Dynamic RAM C apacity 256K bit 1M bit O rganization Speed ns T e ch n ology KM41C256P 255K X 1 70/80/100 CMOS Fast Page 16 Pm DIP Now KM41C256J 256 K X 1 70/80/100 CMOS Fast Page 16 Pm PLCC Now KM41C256Z 256Kx 1

KM41C1000BJ

Abstract: KM44C256BP KM41C1000BP KM41C1001BP KM41C256P KM44C256BJ km4164 KM41C256J KM44C1000LJ KM41C464Z
Contextual Info: FUNCTION GUIDE MEMORY ICs 2. PRODUCT GUIDE 2.1 Dynamic RAM Part Num ber Capacity 64K b it KM4164BP 256 K b it KM41C256P I [ I Technology Features Packages R em ark 100/120/150 NM OS Page M ode 16 Pin DIP 70/80/100 70/80/100 70/80/100 70/80/100 Fast Page Fast Page

al 232 nec

Abstract: TC55B4257 MB832001 NM9306 eeprom Cross Reference D41264 TC5116100 HN28C256 NM9307 oki cross reference
Contextual Info: CROSS REFERENCE GUIDE MEMORY ICs CROSS REFERENCE GUIDE 1 .DRAM Density 256K Org. X1 x4 1M x1 X4 4M X1 x4 Mode Toshiba Hitachi Fujitsu NEC Oki MSM51C256 F.Page KM41C256 TC51256 HM51256 MB81256 Nibble KM41C257 TC51257 — MB81257 — S. Column KM41C258 TC51258

554103-1

Contextual Info: Interconnection Systems selection Guide 82750 Revised 7-95 Miniature Ribbon Connector System CHAMP CHAMP IDC Connectors (Continued) CHAMP Latch Low-Profile Connectors Product Facts • Ready to use connectors— strain relief covers preassem­ bled to connector bodies