D1012 Search Results

D1012UK

Abstract: UT85 UT85-15 FT82-43
Contextual Info: TetraFET D1012UK METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 100W – 28V – 500MHz PUSH–PULL B 4 pls C G (typ) 2 3 1 A E D 5 4 I F FEATURES • SIMPLIFIED AMPLIFIER DESIGN N H M J K • SUITABLE FOR BROAD BAND APPLICATIONS

hf amplifier 100w

Abstract: D1012UK
Contextual Info: TetraFET D1012UK METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 100W – 28V – 500MHz PUSH–PULL B 4 pls C G (typ) 2 3 1 A E D 5 4 I F FEATURES • SIMPLIFIED AMPLIFIER DESIGN N H M J K • SUITABLE FOR BROAD BAND APPLICATIONS

WD081

Contextual Info: FPC Connector FP-1 Series 2.54mm Spacing 4 8 7.5 C 2.54 2.54 D A 11.8 05 08 09 10 11 12 14 17 Stralght Right-Angle W-D0805#01 W-D1805#01 W-D0808#01 W-D1808#01 W-D0809#01 W-D1809#01 W-D0810#01 W-D1810#01 W-D0811#01 W-D1811#01 W-D1012#01 W-D1412#01 W-D1114#01 W-D1214#01

Contextual Info: mi TetraFET § ^ § INI D1012UK SEME LAB METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 100W -28V -500M H z PUSH-PULL B 4 p is c G (ty p ) A 2 _ ▲ A 1 n . D 3 n - . ! • * " • ▼ . _ j

Contextual Info: nil Vrr r = mi TetraFET D1012UK SEM E LAB METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 1 0 0 W -2 8 V -5 0 0 M H z PUSH-PULL FEATURES • SIMPLIFIED AMPLIFIER DESIGN • SUITABLE FOR BROAD BAND APPLICATIONS DH

WD1811

Abstract: 3FPC
Contextual Info: FPC Connectors FP-1 Series 2.54mm Pitch DIP (4) 8 7.5 C 2.54 2.54 D A 11.8 1.5 • Material and Plating ● ● 2.5 0.6 Straight No. of Pins Stralght W-D0805# W-D0808# W-D0809# W-D0810# W-D0811# W-D1012# W-D1114# W-D1117# 05 08 09 10 11 12 14 17 ■ Specifications

Contextual Info: SANGDEST MICROELECTRONICS SDUR/B/D10120CT Green Products Technical Data Data Sheet N1328, Rev. - SDUR/B/D10120CT ULTRAFAST PLASTIC RECTIFIER Applications: • • • • • • • • Antiparallel diode for high frequency switching devices Anti saturation diode

Contextual Info: bGE D aiBBia? □odd 'ìbo 115 h s m l b I SEMELAB • PLC - SEMELAB D1012UK NEW PRODUCT RF SILICON FET GOLD METALLISED MULTI-PURPOSE SILICON DMOSRFFET 100W -28V-500M HZ PUSH-PULL MECHANICAL DATA D im e n sio n s FEATURES • SIMPLIFIED AMPLIFIER DESIGN

Contextual Info: TetraFET D1012UK ROHS COMPLIANT METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 100W – 28V – 500MHz PUSH–PULL B 4 pls C G (typ) 2 3 1 A E D 5 4 I F FEATURES • SIMPLIFIED AMPLIFIER DESIGN N H M J K • SUITABLE FOR BROAD BAND APPLICATIONS

UT85

Abstract: UT85-15 D1012UK
Contextual Info: TetraFET D1012UK ROHS COMPLIANT METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 100W – 28V – 500MHz PUSH–PULL B 4 pls C G (typ) 2 3 1 A E D 5 4 I F FEATURES • SIMPLIFIED AMPLIFIER DESIGN N H M J K • SUITABLE FOR BROAD BAND APPLICATIONS

Contextual Info: TetraFET D1012UK.01 METAL GATE RF SILICON FET MECHANICAL DATA B C 2 pls 2 G (typ) 3 1 H P (2 pls) A D 4 5 GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 100W – 28V – 500MHz PUSH–PULL E (4 pls) F I FEATURES • SIMPLIFIED AMPLIFIER DESIGN N O M J

21 swg enamelled copper wire

Abstract: FT82-43 sWG 24 copper wire UT85 coax D1012UK UT85 UT85-15 swg copper wire FT-82-43
Contextual Info: TetraFET D1012UK METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 100W – 28V – 500MHz PUSH–PULL B 4 pls C G (typ) 2 3 1 A E D 5 4 I F FEATURES • SIMPLIFIED AMPLIFIER DESIGN N H M J K • SUITABLE FOR BROAD BAND APPLICATIONS

Oscilloscope helix

Abstract: D10-12GH
Contextual Info: PHILIPS DIO-12 OSCILLOSCOPE TUBE with flat face, post deflection acceleration by means of a helical electrode and all glass base SCREEN Type D10-12BE D10-12GH D10-12GL D10-12GM Fluorescence Blue Green Yellowish green Purplish blue Phosphorescence Persistence

PI3751-00-LGIZ

Abstract: PI375
Contextual Info: Cool-Power PI3751-00 38V to 60Vin, 200W Cool-Power ZVS Buck-Boost Preliminary Datasheet Description Features The PI3751 is a high efficiency, wide input range DCDC ZVS-Buck-Boost regulator. This high density module integrates controller, power switches, and

tps51620

Abstract: alc889 bq24721 tps51125 ITE8512E C5134 TI_BQ24721C_QFN_32P INVENTEC JMB385 fds8884
Contextual Info: www.kythuatvitinh.com KiliManjaro CS Build A02 2008.02.04 Digitally signed by dd DN: cn=dd, o=dd, ou=dd, email=dddd@yahoo. com, c=US Date: 2009.11.29 17:18:29 +07'00' EE DATE POWER DATE DRAWER DESIGN CHECK RESPONSIBLE DATE CHANGE NO. REV 3 SIZE = FILE NAME : XXXX-XXXXXX-XX

tps51125

Abstract: alc889 c2233 fds8884 bq24721 BQ24721C Inventec IT8512E tps51125 kbc AR8121
Contextual Info: TETON2 DDRIII-Pre MV BUILD 2008.06.18 EE DATE DATE POWER DRAWER DESIGN CHECK RESPONSIBLE DATE CHANGE NO. REV 3 SIZE = FILE NAME : XXXX-XXXXXX-XX XXXXXXXXXXXX P/N INVENTEC TITLE VER : TETON2 SIZE CODE A3 CS SHEET DOC. NUMBER REV 1310A22077-0-MTRA02 1 OF 53

12c675

Abstract: 8541P Inventec tpa6017 sc1470I LPC47N249 *8541p L1019 R502 3443 070435FR015
Contextual Info: Approvals Revisions REV ECN NO. Description Of Change DATE DFTG. ENGR. REL. TABLE OF CONTENTS PAGE 4 - CLOCK GENERATOR 5-7 - BANIAS PROCESSOR 8-10 - ODEM 11-14 - DDR 15-18 - ATI_M10_P 19-20 - VGA DDR 21 -LCD INTERFACE 22-24- ICH4-M 25 - HDD CONNECTOR 26 - CD-ROM CONNECTOR

MCM6926WJ8

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MCM6926 Advance Information 128K x 8 Bit Fast Static Random Access Memory WJ PACKAGE 400 MIL SOJ CASE 857A-02 The MCM6926 is a 1,048,576 bit static random access memory organized as 131,072 words of 8 bits. Static design eliminates the need for external clocks or

Contextual Info: FPC CONNECTOR FP-1 Series 2.54mm Spacing ● Straight Type W-D08 #01 No.of Pins 4 8 7.5 C 2.54 2.54 D A B 11.8 1.5 W-D18 #01 No. of Pins No. of Pins Straight Right-Angle A B C D 5 8 9 10 11 12 14 17 W–D0805#01 W–D0808#01 W–D0809#01 W–D0810#01 W–D0811#01

c4d10120

Abstract: C4D10120D
Contextual Info: D10120D–Silicon Carbide Schottky Diode Z-Rec Rectifier VRRM = 1200 V IF = 10 A Qc =69 nC Features • • • • • Package 1.2kV Schottky Rectifier Zero Reverse Recovery Current High-Frequency Operation Temperature-Independent Switching Extremely Fast Swtitching

BFM12

Abstract: BFM33 BFM34 BFM21 BFM-12 BFM32 D1022UK D1053UK D1015UK
Contextual Info: R.F. Division Semelab Device Type Working Power Working b v dss *D Freq. W atts Voltage Volts Am ps Min. Gain 13db BFM12 4 28 70 5 200MHz BFM21 0.75 0.75 4 28 12 65 0,2 0.2 2.5GHz 2.5GHz 1 2GHz 11db 13db 1.6 2 1GHz 13db 1GHz 13db 1GHz 13db 0.8GHz 13db 16db

VFD075E43A

Abstract: vfd037e43a VFD055E43A VFD022E21A vfd015e43a delta plc cable pin diagram RS-485 VFD015E21A VFD007E21A delta vfd-e with modbus communication b1031
Contextual Info: 서두 DELTA 의 고성능 VFD-E 시리즈를 선택하여 주신 것에 감사 드립니다. VFD-E 시리즈는 최신의 마이크로 프로세서 기술에 의해 최상의 부품과 자재로 제조되었습니다. 이 매뉴얼은 AC 모터 드라이브의 설치, 파라미터 설정, 문제 해결 및 일일 유지 보수에 사용됩니다.

C2D10120D

Abstract: C2D10120 BB 313 TO247-3
Contextual Info: D10120D–Silicon Carbide Schottky Diode Zero Recovery Rectifier VRRM = 1200 V IF = 10 A Qc = 56 nC Features • • • • • • • Package 1200-Volt Schottky Rectifier Zero Reverse Recovery Current Zero Forward Recovery Voltage High-Frequency Operation

C2D10120

Abstract: C2D10120A IN223
Contextual Info: D10120A–Silicon Carbide Schottky Diode VRRM = 1200 V Zero Recovery Rectifier IF = 10 A Qc = 61 nC Features • • • • • • • Package 1200-Volt Schottky Rectifier Zero Reverse Recovery Current Zero Forward Recovery Voltage High-Frequency Operation