UT85 Search Results

61C6

Abstract: UTRON TECHNOLOGY 030C0 J5-30 no11
Contextual Info: UTRON Technology Inc.

 Pentium PCI/ISA Chipset UTRON TECHNOLOGY INC. 1F, No.11, R&D Rd. II, Science-Based Industrial Park, Hsin-Chu, Taiwan, R.O.C. TEL: 886-3-5777882 FAX: 886-3-5777919 Rev. 5.0 UT85C501/502

















































































































Pentium PCI/ISA Chipset

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UT85N03 Power MOSFET 85 Amps, 30 Volts N-CHANNEL POWER MOSFET  DESCRIPTION The UT85N03 uses advanced technology to provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is suited for all low voltage applications.

TO-252 N-channel power MOSFET

Abstract: ut85n03
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UT85N03 Preliminary Power MOSFET 85 Amps, 30 Volts N-CHANNEL POWER MOSFET 1 „ DESCRIPTION TO-252 The UT85N03 uses advanced technology to provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is suited for all low voltage applications.

mosfet 20v 30A

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UT85N03 Preliminary Power MOSFET 85 Amps, 30 Volts N-CHANNEL POWER MOSFET 1 „ DESCRIPTION TO-252 The UT85N03 uses advanced technology to provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is suited for all low voltage applications.

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UT85N03 Preliminary Power MOSFET N-CHANNEL ENHANCEMENT MODE „ DESCRIPTION The UT85N03 uses advanced technology to provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is suited for all low voltage applications.

Contextual Info: Kobe I z u s c h n Í 11 S t r 1p p 1ng d i m e n s i o n Senni -Ri g i d M 1:1 S 1:1 OsJ Q AnschIuss c o n n e c t i n g area Fuer Kobel for c ob le * K o b e Igruppe C ab Ieg r oup Typ Type 0D1 0D5 R G 4 0 5 / U ; UT85 2,20 1,68 0,51 2,25 3,10 RG402/U; UT 141

DIN-6784

Abstract: ISO DIN 6784 DIN6784 DIN 6784 DIN ISO 2768
Contextual Info: Insulator: Gaskets: Centre contact : Other metal I parts PTFE FloursiI ikon 70 Shore Cu Be gold plated Passivated Stainless Steel Mont a g e b o h r u n g e n Mounting holes M2:1 / Scale 2x Cable str ipping for UT85 / Scale 2x Masstob: ALLGEMEINTOL. ISO 2768

ISO DIN 6784

Abstract: DIN-6784 DIN6784 DIN-406 ISO 2768-mH DIN 6784
Contextual Info: 19.5 ±0,5 □25*0,3 03,2 4x Conecting peace M a t.:Brass Gold plated Other Materials: Insulator: Gaskets: Centre contact: Other metal I par ts: PTFE FloursiI ikon 70 Shore Cu Be gold plated Passivated Stainless Stee Kabelzuschni tt fuer UT85 / M2:1 Cable stripping for UT85 / Scale 2x

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UT85N03 Preliminary Power MOSFET N-CHANNEL ENHANCEMENT MODE „ DESCRIPTION The UT85N03 uses advanced technology to provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is suited for all low voltage applications.

Contextual Info: Montagedurchbruch Panel cut out Kabelzuschni t t Stripping dimension Semi-Rigid zm IQ . 'S- M 1:1 S 1:1 Anschluss connecting area Kabel cable x Kabel gruppe 36 Cab 1egroup Typ Type 0D1 0D2 0D3 0D4 0D5 6 R G 4 0 5 / U ; UT85 2,20 1,68 0,51 1,85 2,25 7 RG402/U; UT 141

Contextual Info: www.telegaertner.com 22,1 d 2,35 3,1 d 7/16-28UNEF Phone: +49 7157/125-0 16,2 Fax: +49 7157/125-120 7,2 c a D-71144 Steinenbronn Lerchenstrasse 35 Germany b Mechanical characteristics K.Gärtner GmbH Alle Rechte vorbehalten / all rights reserved Telegärtner

ericsson 10159

Abstract: PTF10159 470-860 mhz Power amplifier w
Contextual Info: PTF 10159 120 Watts, 470–860 MHz GOLDMOS Field Effect Transistor Description The PTF 10159 is an internally matched, common source N-channel enhancement-mode lateral MOSFET intended for large signal television amplifier applications from 470 to 860 MHz. It is rated at 120 watts power

167D

Abstract: TB167D ph c24 zener diode amidon BN-61-202 ph c20 zener diode ph c13 zener diode ph c24 zener
Contextual Info: July 13, 2012 TB167D#7 Frequency=30-512MHz Pout=100W Gain=30dB Vds=28Vdc Idq=0.4+0.8A Efficiency=38 to 50% LQ801>LB501A PH: 805 484-4210 FAX:(805)484-3393 1110 Avenida Acaso, Camarillo CA 93012 www.polyfet.com July 13, 2012 40 100 35 80 30 60 25 40 20 20 100

TB235

Contextual Info: Juune 11, 20144 T TF235 Frequenccy=30-5122 MHz Pout=100W Gain= = 19-21.5 dB Vd ds=28Vdc Id dq=1.2A Efficiency= 48-551% L LR2401 PH: 8805 484-4210 FAX:(805)48 84-3393 1110 Avenida Acasso, Camarillo CA C 93012 ww ww.polyfet.com m June 11, 2014 180.0 22.5 135.0

UT85 coax

Abstract: D1009UK UT85-15 25swg FT50B-43 UT85 50 UT85 FT50B
Contextual Info: TetraFET D1009UK METAL GATE RF SILICON FET MECHANICAL DATA B C 2 pls 2 G (typ) 3 1 H P (2 pls) A D 4 5 GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 150W – 28V – 500MHz PUSH–PULL E (4 pls) F I FEATURES • SIMPLIFIED AMPLIFIER DESIGN N O M J K

Belden 1671A

Abstract: belden ez-86
Contextual Info: 14,35 Alle Rechte vorbehalten / all rights reserved Telegärtner K.Gärtner GmbH D-71144 Steinenbronn Lerchenstrasse 35 Germany Phone: +49 7157/125-0 Fax: +49 7157/125-120 10 6,5 6,35 www.telegaertner.com 6,35 3,1 Mechanical characteristics Mechanische Eigenschaften

1455

Abstract: D1021UK
Contextual Info: TetraFET D1021UK METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 125W – 28V – 400MHz PUSH–PULL A C B 2 pls K 3 2 1 E D 5 4 G (4 pls) F FEATURES • SIMPLIFIED AMPLIFIER DESIGN H J M I N • SUITABLE FOR BROAD BAND APPLICATIONS

Contextual Info: S M A -K a b e le in b a u b u ch se SMA Bulkhead Jack 16.5 max. 3 r n SW 8 / Bestell-Nr. Kabelgruppe; Kabel Order Nr. Cable group; cable J01151A006* J01151A0911 8 SW 11/ M o n ta g e Einbaum aB Assembly Mount, dim. C18 C18 G11 UT-85 G10 (UT-141) Z27 Z27

c2316

Contextual Info: MCX-Steckverbindungen nach CECC 22220 M CX Connectors according to CECC 22220 Serie MCX Series MCX Die Serie M C X um faBt kleine H F-Steckverbindungen mit Schnappverbindung. Diese Steckverbindungen konnen bis zu einer Frequenz von 2 G H z eingesetzt w erden. Die Serie M C X w ird in der A u sfu h ru n g m it 50 O hm W ellenw iderstand

C2706

Abstract: IEC-169-15 standard
Contextual Info: SMA-Steckverbindungen nach IEC Publ. 169-15 SM A Connectors according to IEC Publ. 169-15 Serie SMA Series S M A The SM A series is a very popular screw coupling coax connector and can be used up to frequencies of over 18 GHz depending on type . The impedance is controlled at 50 ohms. Connector styles are available for flexible, conformable and semi-rigid cable

Contextual Info: , Una. J 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212) 227-6005 FAX: (973) 376-8960 The RF Line NPN Silicon RF Power Transistor MRF897R Designed for 24 Volt UHF large-signal, common emitter, class-AB linear amplifier applications in industrial and commercial FM/AM equipment operating

Motorola transistors MRF 947

Abstract: trimpots 3296 transistor C5386 1n4740 2N5591 Motorola 2N5688 CQ 542 Transistor npn motorola equivalent transistor of 2sc3358 HB215/D ic cd 2399 gp
Contextual Info: Selector Guide 1 Discrete Transistor Data Sheets Amplifier Data Sheets Monolithic Integrated Circuit H Data Sheets mm Case Dimensions Cross Reference and Sales Offices 6 M MOTOROLA RF Device Data This publication presents technical information for the several product families that

UT85 coax

Abstract: UT85-15 UT85 UT85 50 D1015UK
Contextual Info: TetraFET D1015UK METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 125W – 28V – 400MHz PUSH–PULL B 4 pls C G (typ) 2 3 1 A E D 5 4 I F FEATURES • SIMPLIFIED AMPLIFIER DESIGN N H M J K • SUITABLE FOR BROAD BAND APPLICATIONS

RG-405 cable

Contextual Info: Anschlußmaße nach CECC 22220 Mating face according to CECC 22220 Telefax 07157/125-120 10 Steinenbronn Lerchenstrasse 35 Telefon 07157/125-0 in CuZn39Pb3 CuBe2 CuZn39Pb3 PTFE Cu1Ni2Au1.27 Cu2Ni5 CuSnZn3 Frequenz / frequency typ. VSWR max. VSWR CECC VSWR