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    C4D10120 Search Results

    C4D10120 Datasheets (5)

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    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    C4D10120A
    Cree Diodes, Rectifiers - Single, Discrete Semiconductor Products, DIODE SCHOTTKY 1.2KV 14A TO220-2 Original PDF 6
    C4D10120D
    Cree Diodes, Rectifiers - Arrays, Discrete Semiconductor Products, DIODE SCHOTTKY 1200V 9A TO247 Original PDF 6
    C4D10120E
    Cree/Wolfspeed Discrete Semiconductor Products - Diodes - Rectifiers - Single - DIODE SCHOTTKY 1.2KV 10A TO252-2 Original PDF 692.84KB
    C4D10120E-TR
    Cree/Wolfspeed Discrete Semiconductor Products - Diodes - Rectifiers - Single - DIODE SCHOTTKY 1.2KV 33A TO252-2 Original PDF 692.84KB
    C4D10120H
    Cree/Wolfspeed Discrete Semiconductor Products - Diodes - Rectifiers - Single - ZRECTM 10A 1200V SIC SCHOTTKY DI Original PDF 643.8KB
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    C4D10120 Price and Stock

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    Wolfspeed C4D10120E

    Diode Schottky SiC 1.2KV 33A 3-Pin(2+Tab) TO-252 Tube
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    Verical () C4D10120E 5,511 1
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    C4D10120E 1,500 75
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    C4D10120E 337 2
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    Mouser Electronics C4D10120E 239
    • 1 $10.10
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    Arrow Electronics () C4D10120E 5,511 12 Weeks 1
    • 1 $9.41
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    C4D10120E 337 42 Weeks 1
    • 1 $9.91
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    TME C4D10120E 75 1
    • 1 $9.39
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    Richardson RFPD C4D10120E 3,716 3,600
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    Wolfspeed C4D10120D

    Diode Schottky SiC 1.2KV 38A 3-Pin(3+Tab) TO-247 Tube
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    Verical () C4D10120D 1,830 2
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    C4D10120D 180 30
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    Mouser Electronics C4D10120D 2,546
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    Newark C4D10120D Bulk 4,975 1
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    TME C4D10120D 1
    • 1 $9.20
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    Richardson RFPD C4D10120D 200 450
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    Win Source Electronics C4D10120D 4,000
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    Wolfspeed C4D10120E-TR

    Diode Schottky SiC 1.2KV 33A 3-Pin(2+Tab) TO-252 T/R
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    Verical C4D10120E-TR 350 1
    • 1 $9.33
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    Mouser Electronics C4D10120E-TR
    • 1 $10.47
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    Arrow Electronics C4D10120E-TR Cut Strips 350 12 Weeks 1
    • 1 $9.35
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    Richardson RFPD C4D10120E-TR 2,500
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    Wolfspeed C4D10120A

    SiC Schottky Diodes SIC SCHOTTKY DIODE 1200V, 10A
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    Mouser Electronics C4D10120A
    • 1 $10.10
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    Newark C4D10120A Bulk 6,217 1
    • 1 $10.10
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    TME C4D10120A 1 1
    • 1 $9.19
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    Richardson RFPD C4D10120A 625 1,000
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    Cree, Inc. C4D10120D

    Diode Schottky SiC 1.2KV 38A 3-Pin(3+Tab) TO-247 Tube
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    Bristol Electronics C4D10120D 5
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    Quest Components C4D10120D 4
    • 1 $12.12
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    C4D10120 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    c4d10120

    Abstract: C4D10120D
    Contextual Info: C4D10120D–Silicon Carbide Schottky Diode Z-Rec Rectifier VRRM = 1200 V IF = 10 A Qc =69 nC Features • • • • • Package 1.2kV Schottky Rectifier Zero Reverse Recovery Current High-Frequency Operation Temperature-Independent Switching Extremely Fast Swtitching


    Original
    c4d10120do-247-3c4d10120 PDF

    c4d10120

    Contextual Info: C4D10120D–Silicon Carbide Schottky Diode Z-Rec Rectifier VRRM = 1200 V IF; TC<135˚C = 18 A Qc =69 nC Features • • • • • Package 1.2kV Schottky Rectifier Zero Reverse Recovery Current High-Frequency Operation Temperature-Independent Switching


    Original
    c4d10120do-247-3c4d10120 PDF

    C4D10120A

    Abstract: CSD04060 12kv fast switching
    Contextual Info: C4D10120A–Silicon Carbide Schottky Diode VRRM = 1200 V Z-Rec Rectifier IF = 10 A Qc = 66 nC Features • • • • • Package 1.2kV Schottky Rectifier Zero Reverse Recovery Current High-Frequency Operation Temperature-Independent Switching Extremely Fast Swtitching


    Original
    c4d10120ao-220-2c4d10120csd04060+112kv fast switching PDF

    Contextual Info: C4D10120A VRRM = 1200 V Silicon Carbide Schottky Diode IF TC=135˚C = 14 A Z-Rec Rectifier Qc Features • • • • • 52 nC Package 1.2kV Schottky Rectifier Zero Reverse Recovery Current High-Frequency Operation Temperature-Independent Switching


    Original
    c4d10120ao-220-2 PDF

    C4D10120

    Contextual Info: C4D10120D VRRM = Silicon Carbide Schottky Diode IF TC=135˚C = 13 A* Z-Rec Rectifier Qc Features • • • • • 54 nC* 1.2kV Schottky Rectifier Zero Reverse Recovery Current High-Frequency Operation Temperature-Independent Switching Extremely Fast Switching


    Original
    c4d10120do-247-3o-247c4d10120 PDF

    Contextual Info: C4D10120E VRRM = 1200 V Silicon Carbide Schottky Diode IF TC=135˚C = 16 A Z-Rec Rectifier Qc Features • • • • • 52 nC Package 1.2kV Schottky Rectifier Zero Reverse Recovery Current High-Frequency Operation Temperature-Independent Switching Behavior


    Original
    c4d10120eo-252-2 PDF

    C4D10120

    Contextual Info: C4D10120D VRRM = Silicon Carbide Schottky Diode IF TC=135˚C = 18 A* Z-Rec Rectifier Qc Features • • • • • 54 nC* 1.2kV Schottky Rectifier Zero Reverse Recovery Current High-Frequency Operation Temperature-Independent Switching Extremely Fast Switching


    Original
    c4d10120do-247-3o-247c4d10120 PDF

    Contextual Info: C4D10120D VRRM = Silicon Carbide Schottky Diode IF TC=135˚C = 18 A* Z-Rec Rectifier Qc Features • • • • • 54 nC* 1.2kV Schottky Rectifier Zero Reverse Recovery Current High-Frequency Operation Temperature-Independent Switching Extremely Fast Switching


    Original
    c4d10120do-247-3o-24plantedc4d10120a PDF

    c4d10120

    Abstract: C4D10120E TO-252-2
    Contextual Info: C4D10120E–Silicon Carbide Schottky Diode Z-Rec Rectifier VRRM = 1200 V IF, = 16 A TC<135˚C Qc Features • • • • • = 66 nC Package 1200-Volt Schottky Rectifier Zero Reverse Recovery Current High-Frequency Operation Temperature-Independent Switching Behavior


    Original
    c4d10120e1200-volto-252-2c4d10120+1to-252-2 PDF

    C4D10120

    Contextual Info: C4D10120D VRRM = Silicon Carbide Schottky Diode IF TC=135˚C = 18 A* Z-Rec Rectifier Qc Features • • • • • 54 nC* 1.2kV Schottky Rectifier Zero Reverse Recovery Current High-Frequency Operation Temperature-Independent Switching Extremely Fast Switching


    Original
    c4d10120do-247-3o-24plantedc4d10120a+1c4d10120 PDF

    Contextual Info: C4D10120E VRRM Silicon Carbide Schottky Diode Qc Features = 52 nC Package 1200-Volt Schottky Rectifier Zero Reverse Recovery Current High-Frequency Operation Temperature-Independent Switching Behavior Positive Temperature Coefficient on VF Benefits • •


    Original
    c4d10120e1200-volto-252-2 PDF

    Contextual Info: C4D10120A VRRM = 1200 V Silicon Carbide Schottky Diode IF TC=135˚C = 14 A Z-Rec Rectifier Qc Features • • • • • 52 nC Package 1.2kV Schottky Rectifier Zero Reverse Recovery Current High-Frequency Operation Temperature-Independent Switching


    Original
    c4d10120ao-220-2 PDF

    c4d10120

    Abstract: CSD04060
    Contextual Info: C4D10120E–Silicon Carbide Schottky Diode VRRM = 1200 V Z-Rec Rectifier IF AVG = 10 A Qc Features • • • • • Package 1200-Volt Schottky Rectifier Zero Reverse Recovery Current High-Frequency Operation Temperature-Independent Switching Behavior


    Original
    c4d10120e1200-volto-252-2c4d10120+1csd04060 PDF

    cmf20120

    Abstract: CMF20120D mosfet 10a 800v 423F power Diode 800V 20A MOSFET 20a 800v Cree SiC MOSFET
    Contextual Info: CMF20120D-Silicon Carbide Power MOSFET Z-FeTTM MOSFET VDS = 1200 V ID MAX = 42 A N-Channel Enhancement Mode RDS(on) Features • • • • • • Package High Speed Switching with Low Capacitances High Blocking Voltage with Low RDS(on) Easy to Parallel and Simple to Drive


    Original
    cmf20120d-silicono-247-3cmf20120dcmf20120+5mosfet 10a 800v423fpower diode 800v 20amosfet 20a 800vcree sic mosfet PDF

    C2M1000170

    Abstract: Diode 1S 2473
    Contextual Info: VDS 1700 V ID @ 25˚C 4.9 A C2M1000170D Silicon Carbide Power MOSFET TM Z-FET MOSFET RDS on 1.0 Ω N-Channel Enhancement Mode Features • • • • • Package High Speed Switching with Low Capacitances High Blocking Voltage with Low RDS(on) Easy to Parallel and Simple to Drive


    Original
    c2m1000170do-247-3c2m1000170diode 1s 2473 PDF

    cmf20120

    Abstract: CMF20120D MOSFET 20a 800v
    Contextual Info: CMF20120D-Silicon Carbide Power MOSFET Z-FeTTM MOSFET VDS = 1200 V ID MAX = 42 A N-Channel Enhancement Mode RDS(on) Features • • • • • • Package High Speed Switching with Low Capacitances High Blocking Voltage with Low RDS(on) Easy to Parallel and Simple to Drive


    Original
    cmf20120d-silicono-247-3cmf20120dcmf20120+1mosfet 20a 800v PDF

    c2m0080120

    Abstract: C2M0080120D 12v to 1000v inverters circuit diagrams 10v to 1000v inverters circuit diagrams
    Contextual Info: VDS 1200 V ID @ 25˚C 31.6 A C2M0080120D Silicon Carbide Power MOSFET TM Z-FET MOSFET RDS on 80 mΩ N-Channel Enhancement Mode Features • • • • • • Package High Speed Switching with Low Capacitances High Blocking Voltage with Low RDS(on) Easy to Parallel and Simple to Drive


    Original
    c2m0080120do-247-3c2m008012012v to 1000v inverters circuit diagrams+110v to 1000v inverters circuit diagrams PDF

    C4D05120

    Abstract: CMF10120 CSD01060E c4d02120e c4d02120 C3D02060 C4D02120A C3D02060A C2D20120 c3d0606
    Contextual Info: Power Product Line Z-RecTM Rectifiers DALL, Rev. G Datasheet: C3 VRRM V IF(AVG) (A) IF(AVG) (A) (Tc=150°C) (Tc=100°C) Zero-Recovery Rectifiers and VF(T VF(T TJ(Max) Max Typ Max (°C) Package Type Recommended for new designs? J=25°C) Typ J=175°C) CSD01060A


    Original
    csd01060acsd01060ec3d02060ac3d02060e+14c3d02060fc3d03060ac3d03060ec3d03060fc3d04060ac3d04060ec4d05120cmf10120c4d02120ec4d02120c3d02060c4d02120ac2d20120c3d0606 PDF

    C2M0160120D

    Contextual Info: VDS 1200 V ID MAX @ 25˚C C2M0160120D Silicon Carbide Power MOSFET TM Z-FET MOSFET RDS(on) 17.7 A 160 mΩ N-Channel Enhancement Mode Features • • • • • Package High Speed Switching with Low Capacitances High Blocking Voltage with Low RDS(on) Easy to Parallel and Simple to Drive


    Original
    c2m0160120do-247-3c2m0160applications PDF

    Contextual Info: VDS 1200 V ID @ 25˚C 31.6 A C2M0080120D Silicon Carbide Power MOSFET TM Z-FET MOSFET RDS on 80 mΩ N-Channel Enhancement Mode Features • • • • • • Package High Speed Switching with Low Capacitances High Blocking Voltage with Low RDS(on) Easy to Parallel and Simple to Drive


    Original
    c2m0080120do-247-3 PDF