C2M0080120 Search Results

C2M0080120 Datasheets (1)

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Cree

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
C2M0080120D		Cree	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 1200V 31.6A TO247	Original	PDF		9

C2M0080120 Price and Stock

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Wolfspeed C2M0080120D Trans MOSFET N-CH SiC 1.2KV 36A 3-Pin(3+Tab) TO-247 Tube
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Arrow Electronics	C2M0080120D		2	37 Weeks	1	1 $28.46 10 $27.76 100 $20.24 1000 $19.85 10000 $19.85	Buy Now
Newark	C2M0080120D	Bulk			1	1 $31.08 10 $29.49 100 $27.87 1000 $24.46 10000 $23.16	Buy Now
Win Source Electronics	C2M0080120D		2,460			1 - 10 - 100 $3.24 1000 $2.91 10000 $2.91	Buy Now
Cree, Inc. C2M0080120
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Quest Components	C2M0080120		4			1 $51.88 10 $51.88 100 $51.88 1000 $51.88 10000 $51.88	Buy Now

C2M0080120 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
c2m0080120 Abstract: C2M0080120D 12v to 1000v inverters circuit diagrams 10v to 1000v inverters circuit diagrams Contextual Info: VDS 1200 V ID @ 25˚C 31.6 A C2M0080120D Silicon Carbide Power MOSFET TM Z-FET MOSFET RDS on 80 mΩ N-Channel Enhancement Mode Features • • • • • • Package High Speed Switching with Low Capacitances High Blocking Voltage with Low RDS(on) Easy to Parallel and Simple to Drive	Original	c2m0080120d o-247-3 c2m0080120 12v to 1000v inverters circuit diagrams +110v to 1000v inverters circuit diagrams	PDF
Contextual Info: VDS 1200 V ID @ 25˚C 31.6 A C2M0080120D Silicon Carbide Power MOSFET TM Z-FET MOSFET RDS on 80 mΩ N-Channel Enhancement Mode Features • • • • • • Package High Speed Switching with Low Capacitances High Blocking Voltage with Low RDS(on) Easy to Parallel and Simple to Drive	Original	c2m0080120d o-247-3	PDF
c2m0080120 Abstract: Cree SiC MOSFET CPM2-1200-0080B C2M0080120D Contextual Info: VDS 1200 V ID @ 25˚C 31.6 A CPM2-1200-0080B Silicon Carbide Power MOSFET TM Z-FET MOSFET RDS on 80 mΩ N-Channel Enhancement Mode Features • • • • • • Package High Speed Switching with Low Capacitances High Blocking Voltage with Low RDS(on)	Original	cpm2-1200-0080b c2m0080120 cree sic mosfet c2m0080120d	PDF
C2M1000170 Abstract: Diode 1S 2473 Contextual Info: VDS 1700 V ID @ 25˚C 4.9 A C2M1000170D Silicon Carbide Power MOSFET TM Z-FET MOSFET RDS on 1.0 Ω N-Channel Enhancement Mode Features • • • • • Package High Speed Switching with Low Capacitances High Blocking Voltage with Low RDS(on) Easy to Parallel and Simple to Drive	Original	c2m1000170d o-247-3 c2m1000170 diode 1s 2473	PDF
C2M0160120D Contextual Info: VDS 1200 V ID MAX @ 25˚C C2M0160120D Silicon Carbide Power MOSFET TM Z-FET MOSFET RDS(on) 17.7 A 160 mΩ N-Channel Enhancement Mode Features • • • • • Package High Speed Switching with Low Capacitances High Blocking Voltage with Low RDS(on) Easy to Parallel and Simple to Drive	Original	c2m0160120d o-247-3 c2m0160applications	PDF