C2M0160120D Search Results
C2M0160120D Datasheets (1)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| C2M0160120D |
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FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 1200V 17.7A TO-247 | Original | 9 |
C2M0160120D Price and Stock
Cree, Inc.
Cree, Inc. C2M0160120DPOWER FIELD-EFFECT TRANSISTOR, 19A I(D), 1200V, 0.196OHM, 1-ELEMENT, N-CHANNEL, SILICON CARBIDE, METAL-OXIDE SEMICONDUCTOR FET, TO-247 |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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C2M0160120D | 25 |
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C2M0160120D Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
C2M0160120DContextual Info: VDS 1200 V ID MAX @ 25˚C C2M0160120D Silicon Carbide Power MOSFET TM Z-FET MOSFET RDS(on) 17.7 A 160 mΩ N-Channel Enhancement Mode Features • • • • • Package High Speed Switching with Low Capacitances High Blocking Voltage with Low RDS(on) Easy to Parallel and Simple to Drive |
Original |
C2M0160120D O-247-3 C2M0160applications C2M0160120D | |
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Contextual Info: VDS 1200 V ID @ 25˚C 17.7 A CPM2-1200-0160B Silicon Carbide Power MOSFET TM Z-FET MOSFET RDS on 160 mΩ N-Channel Enhancement Mode Features • • • • Package High Speed Switching with Low Capacitances High Blocking Voltage with Low RDS(on) Easy to Parallel and Simple to Drive |
Original |
CPM2-1200-0160B CPM2-1200-0160B |