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    C2M0160120D Search Results

    C2M0160120D Datasheets (1)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    C2M0160120D
    		Cree FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 1200V 17.7A TO-247 Original PDF 9
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    C2M0160120D Price and Stock

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    Wolfspeed C2M0160120D

    SICFET N-CH 1200V 19A TO247-3
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    DigiKey C2M0160120D Tube
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    Verical C2M0160120D 90 30
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    Bristol Electronics () C2M0160120D 10,080
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    C2M0160120D 3,422
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    TME C2M0160120D 22 1
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    Win Source Electronics C2M0160120D 14,999
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    AP SEMI AC2M0160120D

    SIC MOSFET N-CH 1200V 18A TO247-
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    DigiKey AC2M0160120D Tube 1
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    Wolfspeed C2M0160120D (C2M)

    Mosfet, N-Ch, 1.2Kv, 19A, To-247; Transistor Polarity:N Channel; Continuous Drain Current Id:19A; Drain Source Voltage Vds:1.2Kv; On Resistance Rds(On):0.16Ohm; Rds(On) Test Voltage Vgs:20V; Threshold Voltage Vgs:2.6V; Power Rohs Compliant: Yes |Wolfspeed C2M0160120D
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    Newark C2M0160120D (C2M) Bulk 1
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    Cree, Inc. C2M0160120D

    POWER FIELD-EFFECT TRANSISTOR, 19A I(D), 1200V, 0.196OHM, 1-ELEMENT, N-CHANNEL, SILICON CARBIDE, METAL-OXIDE SEMICONDUCTOR FET, TO-247
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    Quest Components C2M0160120D 25
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    C2M0160120D Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    C2M0160120D

    Contextual Info: VDS 1200 V ID MAX @ 25˚C C2M0160120D Silicon Carbide Power MOSFET TM Z-FET MOSFET RDS(on) 17.7 A 160 mΩ N-Channel Enhancement Mode Features • • • • • Package High Speed Switching with Low Capacitances High Blocking Voltage with Low RDS(on) Easy to Parallel and Simple to Drive


    Original     		C2M0160120D O-247-3 C2M0160applications C2M0160120D PDF

    Contextual Info: VDS 1200 V ID @ 25˚C 17.7 A CPM2-1200-0160B Silicon Carbide Power MOSFET TM Z-FET MOSFET RDS on 160 mΩ N-Channel Enhancement Mode Features • • • • Package High Speed Switching with Low Capacitances High Blocking Voltage with Low RDS(on) Easy to Parallel and Simple to Drive


    Original     		CPM2-1200-0160B CPM2-1200-0160B PDF