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    C2M0080120D Search Results

    C2M0080120D Datasheets (1)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    C2M0080120D
    Cree FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 1200V 31.6A TO247 Original PDF 9
    SF Impression Pixel

    C2M0080120D Price and Stock

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    Wolfspeed C2M0080120D

    SICFET N-CH 1200V 36A TO247-3
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    DigiKey C2M0080120D Tube 739 1
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    Verical C2M0080120D 8 1
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    Newark C2M0080120D Bulk 251 1
    • 1 $29.50
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    TME C2M0080120D 2 1
    • 1 $31.60
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    Chip Stock C2M0080120D 8,463
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    Vyrian C2M0080120D 2,511
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    Win Source Electronics C2M0080120D 6,963
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    AP SEMI AC2M0080120D

    SIC MOSFET N-CH 1200V 37A TO247-
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    DigiKey AC2M0080120D Tube 1
    • 1 $4.97
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    Analog Power AMC2M0080120D

    SICFET N-CH 1200V 36A TO247
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    DigiKey AMC2M0080120D Bulk 1
    • 1 $29.24
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    C2M0080120D Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    c2m0080120

    Abstract: C2M0080120D 12v to 1000v inverters circuit diagrams 10v to 1000v inverters circuit diagrams
    Contextual Info: VDS 1200 V ID @ 25˚C 31.6 A C2M0080120D Silicon Carbide Power MOSFET TM Z-FET MOSFET RDS on 80 mΩ N-Channel Enhancement Mode Features • • • • • • Package High Speed Switching with Low Capacitances High Blocking Voltage with Low RDS(on) Easy to Parallel and Simple to Drive


    Original
    C2M0080120D O-247-3 C2M0080120D c2m0080120 12v to 1000v inverters circuit diagrams 10v to 1000v inverters circuit diagrams PDF

    Contextual Info: VDS 1200 V ID @ 25˚C 31.6 A C2M0080120D Silicon Carbide Power MOSFET TM Z-FET MOSFET RDS on 80 mΩ N-Channel Enhancement Mode Features • • • • • • Package High Speed Switching with Low Capacitances High Blocking Voltage with Low RDS(on) Easy to Parallel and Simple to Drive


    Original
    C2M0080120D O-247-3 C2M0080120D PDF

    c2m0080120

    Abstract: Cree SiC MOSFET CPM2-1200-0080B C2M0080120D
    Contextual Info: VDS 1200 V ID @ 25˚C 31.6 A CPM2-1200-0080B Silicon Carbide Power MOSFET TM Z-FET MOSFET RDS on 80 mΩ N-Channel Enhancement Mode Features • • • • • • Package High Speed Switching with Low Capacitances High Blocking Voltage with Low RDS(on)


    Original
    CPM2-1200-0080B CPM2-1200-0080B c2m0080120 Cree SiC MOSFET C2M0080120D PDF

    C2M1000170

    Abstract: Diode 1S 2473
    Contextual Info: VDS 1700 V ID @ 25˚C 4.9 A C2M1000170D Silicon Carbide Power MOSFET TM Z-FET MOSFET RDS on 1.0 Ω N-Channel Enhancement Mode Features • • • • • Package High Speed Switching with Low Capacitances High Blocking Voltage with Low RDS(on) Easy to Parallel and Simple to Drive


    Original
    C2M1000170D O-247-3 C2M1000170D C2M1000170 Diode 1S 2473 PDF

    C2M0160120D

    Contextual Info: VDS 1200 V ID MAX @ 25˚C C2M0160120D Silicon Carbide Power MOSFET TM Z-FET MOSFET RDS(on) 17.7 A 160 mΩ N-Channel Enhancement Mode Features • • • • • Package High Speed Switching with Low Capacitances High Blocking Voltage with Low RDS(on) Easy to Parallel and Simple to Drive


    Original
    C2M0160120D O-247-3 C2M0160applications C2M0160120D PDF