54 BALL VFBGA Search Results

MT45W8MW16BGX

Abstract: MT45W8MW16BGX-701LWT 700000H-7FFFFFH
Contextual Info: PRELIMINARY‡ 8 MEG x 16 ASYNC/PAGE/BURST CellularRAM MEMORY 128Mb BURST CellularRAMTM 1.5 MT45W8MW16BGX Features Figure 1: Ball Assignment 54-Ball VFBGA • Single device supports asynchronous, page, and burst operations • Vcc, VccQ Voltages 1.7V–1.95V Vcc

BCR100

Contextual Info: PRELIMINARY‡ 8 MEG x 16 ASYNC/PAGE/BURST CellularRAM MEMORY 128Mb BURST CellularRAMTM 1.5 MT45W8MW16BGX Features Figure 1: Ball Assignment 54-Ball VFBGA • Single device supports asynchronous, page, and burst operations • Vcc, VccQ Voltages 1.7V–1.95V Vcc

Contextual Info: PRELIMINARY‡ 4 MEG x 16, 2 MEG x 16 ASYNC/PAGE/BURST CellularRAM MEMORY BURST CellularRAMTM MT45W4MW16BFB MT45W2MW16BFB Features • • • • • Figure 1: Ball Assignment 54-Ball VFBGA Single device supports asynchronous, page, and burst operations VCC, VCCQ Voltages

micron memory sram

Abstract: a22 package marking label infineon Micron 32MB NOR FLASH DEVICE MARKING CODE table dram zip INFINEON transistor marking label infineon application note marking code C5 RCR Resistor
Contextual Info: 8 MEG x 16 ASYNC/PAGE/BURST CellularRAM 1.5 MEMORY 128Mb BURST CellularRAMTM 1.5 MT45W8MW16BGX Features Figure 1: Ball Assignment 54-Ball VFBGA • Single device supports asynchronous, page, and burst operations • Vcc, VccQ Voltages 1.7V–1.95V Vcc 1.7V–1.95V VccQ

MT45W8MW16BGX

Abstract: MT45W8MW16BGX-701LWT BDQ8 CSP3-20
Contextual Info: 8 MEG x 16 ASYNC/PAGE/BURST CellularRAM 1.5 MEMORY 128Mb BURST CellularRAMTM 1.5 MT45W8MW16BGX Features Figure 1: Ball Assignment 54-Ball VFBGA • Single device supports asynchronous, page, and burst operations • Vcc, VccQ Voltages 1.7V–1.95V Vcc 1.7V–1.95V VccQ

MT48LC16M16LF

Contextual Info: PRELIMINARY‡ 256Mb: x16 MOBILE SDRAM MOBILE SDRAM MT48LC16M16LF, MT48G16M16LF, MT48V16M16LF 4 MEG X 16 X 4 BANKS Features Figure 1: Ball Assignment Top View 54-Ball VFBGA • Fully synchronous; all signals registered on positive edge of system clock • Internal pipelined operation; column address can

jesd 51-7

Abstract: 63 ball Vfbga thermal resistance 56DL metcal apr 5000 MO-205 56ZQL BGA Ball Crack 054UG08C127 APR-5000
Contextual Info: Application Report SZZA040 - December 2003 54BGA Package Frank Mortan SLL Package Development ABSTRACT The TI 54-ball low-profile, fine-pitch, ball grid array TFBGA meets dimensions specified in JEDEC MO-205, Variation DD. This 0.8-mm-pitch BGA allows economical OEM designs

962n

Contextual Info: 2 MEG x 16 ASYNC/PAGE/BURST CellularRAM MEMORY BURST CellularRAMTM MT45W2MW16BAFB Features Figure 1: 54-Ball VFBGA • Single device supports asynchronous, page, and burst operations • VCC, VCCQ Voltages 1.70V–1.95V VCC 1.70V–3.30V VCCQ • Random Access Time: 70ns

Contextual Info: 4 MEG x 16, 2 MEG x 16 ASYNC/PAGE/BURST CellularRAM MEMORY BURST CellularRAMTM MT45W4MW16BFB MT45W2MW16BFB Features Figure 1: 54-Ball VFBGA • Single device supports asynchronous, page, and burst operations • VCC, VCCQ Voltages 1.70V–1.95V VCC 1.70V–3.30V VCCQ

DEVICE MARKING CODE table

Abstract: INFINEON transistor marking INFINEON TVS diode process marking code C5 marking code j6 sus material 304 MT45W4MW16B thd202
Contextual Info: 4 MEG x 16 ASYNC/PAGE/BURST CellularRAM 1.0 MEMORY ASYNC/PAGE/BURST CellularRAMTM 1.0 MEMORY MT45W4MW16BFB Features Figure 1: 54-Ball VFBGA • Single device supports asynchronous, page, and burst operations • VCC, VCCQ Voltages 1.70V–1.95V VCC 1.70V–3.30V VCCQ

Contextual Info: 4 MEG x 16 ASYNC/PAGE/BURST CellularRAM MEMORY BURST CellularRAMTM MT45W4MW16BFB Features Figure 1: 54-Ball VFBGA • Single device supports asynchronous, page, and burst operations • VCC, VCCQ Voltages 1.70V–1.95V VCC 1.70V–3.30V VCCQ • Random Access Time: 70ns

Micron 32MB NOR FLASH

Abstract: 0-30v power DEVICE MARKING CODE table INFINEON transistor marking label infineon application note marking code C5 RCR Resistor active suspension sensor micron cmos sensor connection
Contextual Info: 2 MEG x 16, 1 MEG x 16 ASYNC/PAGE/BURST CellularRAM 1.0 MEMORY ASYNC/PAGE/BURST CellularRAM 1.0 MEMORY MT45W2MW16BAFB MT45W1MW16BAFB Features Figure 1: 54-Ball VFBGA • Single device supports asynchronous, page, and burst operations • Random Access Time: 70ns, 85ns

Contextual Info: 64Mb: x16 MOBILE SDRAM SYNCHRONOUS DRAM MT48H4M16LF - 1 MEG x 16 x 4 BANKS Features Figure 1: 54-Ball FBGA Pin Assignment Top View • Temperature compensated self refresh (TCSR) • Fully synchronous; all signals registered on positive edge of system clock

Contextual Info: 64Mb: x16 MOBILE SDRAM SYNCHRONOUS DRAM MT48H4M16LF - 1 MEG x 16 x 4 BANKS Features Figure 1: 54-Ball FBGA Pin Assignment Top View • Temperature compensated self refresh (TCSR) • Fully synchronous; all signals registered on positive edge of system clock

Contextual Info: 128Mb: x16 MOBILE SDRAM SYNCHRONOUS DRAM MT48H8M16LF - 2 MEG x 16 x 4 BANKS Features Figure 1: 54-Ball FBGA Pin Assignment Top View • Temperature compensated self refresh (TCSR) • Fully synchronous; all signals registered on positive edge of system clock

Contextual Info: PRELIMINARY‡ 64Mb: x16 MOBILE SDRAM SYNCHRONOUS DRAM MT48H4M16LF - 1 MEG x 16 x 4 BANKS Features Figure 1: 54-Ball FBGA Pin Assignment Top View • Temperature compensated self refresh (TCSR) • Fully synchronous; all signals registered on positive edge of system clock

Contextual Info: PRELIMINARY‡ 128Mb: x16 MOBILE SDRAM SYNCHRONOUS DRAM MT48H8M16LF - 2 MEG x 16 x 4 BANKS Features Figure 1: 54-Ball FBGA Pin Assignment Top View • Temperature compensated self refresh (TCSR) • Fully synchronous; all signals registered on positive edge of system clock

CYL008M162FFBU-1ABAI

Abstract: M2A2
Contextual Info: PRELIMINARY CYL008M162FFB 128-Mbit 8-Mbit x 16 Low-Power MoBL4 SDRAM Features — Deep Sleep Mode — Self Refresh Mode; standard and low power • Functionality • Temperature: –40°C to +85°C — Internal 4 Bank Operation • 8 mm x 8 mm x 1.0 mm 54-ball 0.8 mm FBGA Package

FX109

Abstract: FY108 "NOR Flash" intel 28f MT28F644W18 FY113 FX113 FW117 fw12 FW118 FY114
Contextual Info: 4 MEG x 16 ASYNC/PAGE/BURST FLASH MEMORY FLASH MEMORY MT28F644W18 MT28F644W30 1.8V Low Voltage, Extended Temperature Features • • • • • • • Figure 1: 56-Ball VFBGA Flexible 4Mb multipartition architecture Single word 16-bit data bus Support for true concurrent operation with zero latency

FX119

Abstract: FX117
Contextual Info: 4 MEG x 16 ASYNC/PAGE/BURST FLASH MEMORY FLASH MEMORY MT28F644W18 MT28F644W30 1.8V Low Voltage, Extended Temperature Features • • • • • • • Figure 1: 56-Ball VFBGA Flexible 4Mb multipartition architecture Single word 16-bit data bus Support for true concurrent operation with zero latency

48 ball VFBGA

Abstract: 90 ball VFBGA LVTH162 micro pitch BGA tSSOP 56 socket TSSOP YAMAICHI SOCKET 48-PIN 56-PIN ALVCH16373 LVCH16244A
Contextual Info: Application Report SZZA029B - May 2002 16-Bit Widebus Logic Families in 56-Ball, 0.65-mm Pitch, Very Thin Fine-Pitch BGA VFBGA Packages Frank Mortan and Mark Frimann Standard Linear & Logic ABSTRACT TI’s 56-ball MicroStar Jr. package, registered under JEDEC MO-225, has demonstrated

SR52

Abstract: FY618 SR-52
Contextual Info: 8 MEG x 16 ASYNC/PAGE/BURST FLASH MEMORY FLASH MEMORY MT28F1284W18 1.8V Low Voltage, Extended Temperature Features Figure 1: 56-Ball VFBGA Dedicated commands to decrease programming times for both in-factory and in-system operations Fast programming algorithm FPA for fast PROGRAM

FY618

Abstract: FY617
Contextual Info: 8 MEG x 16 ASYNC/PAGE/BURST FLASH MEMORY FLASH MEMORY MT28F1284W18 1.8V Low Voltage, Extended Temperature Features Figure 1: 56-Ball VFBGA Dedicated commands to decrease programming times for both in-factory and in-system operations Fast programming algorithm FPA for fast PROGRAM

SR52 W 18

Abstract: FX118 transistor marking A21 FY114 Fw*118 fw104 intel marking 28f intel package marking w18 marking PBA marking W18
Contextual Info: 4 MEG x 16 ASYNC/PAGE/BURST FLASH MEMORY FLASH MEMORY MT28F644W18 MT28F644W30 1.8V Low Voltage, Extended Temperature Features • • • • • • • Figure 1: 56-Ball VFBGA Flexible 4Mb multipartition architecture Single word 16-bit data bus Support for true concurrent operation with zero latency