FW104 Search Results

FW104

Abstract: ITR11204 ITR11205 ITR11206 W104 ITR1120
Contextual Info: 注文コード No. N 5 3 0 6 A FW104 No. N 5 3 0 6 A 72500 開発速報 No. ※ 5306 とさしかえてください。 FW104 特長 P チャネル MOS 形シリコン電界効果トランジスタ 超高速スイッチング用 ・低オン抵抗。 ・超高速スイッチング。

mosfet cross reference

Abstract: Power MOSFET Cross Reference Guide 2SK2146 Cross Reference power MOSFET SUP60NO6-18 MOSFET TOSHIBA 2SK irf510 Motorola SUP70NO6 STP16NEO6 IRF540 substitution
Contextual Info: TMOS Power MOSFET Cross Reference This Cross reference lists MOSFETs by either industry standard part number or by manufacturer's part number for which there is a Motorola nearest or similar replacement. For devices not listed, or for additional information, contact the nearest Motorola Franchised Distributor or your local

IRF 850 mosfet

Abstract: Mini size of Discrete semiconductor elements 2SJ335 cp 035 sanyo CP 022 ND fa214 8ROM 2SK2637 marking 85m ok 2SJ382
Contextual Info: Medium Output Power MOSFETs l N ew P a d o - g e : T S S O P 8 *0ne size sm aller than S0P8. Best su ited fo r higher performance and effic ie n c y of battery-pow ered equipment and av ailab le fo r h igh-density surface mount. S O P S ^Reduced surface mount area by 502 and thickness by 30Z over the SC-63(TP).package.

FX109

Abstract: FY108 "NOR Flash" intel 28f MT28F644W18 FY113 FX113 FW117 fw12 FW118 FY114
Contextual Info: 4 MEG x 16 ASYNC/PAGE/BURST FLASH MEMORY FLASH MEMORY MT28F644W18 MT28F644W30 1.8V Low Voltage, Extended Temperature Features • • • • • • • Figure 1: 56-Ball VFBGA Flexible 4Mb multipartition architecture Single word 16-bit data bus Support for true concurrent operation with zero latency

IRF9310

Abstract: mosfet cross reference korea IRFZ44 IRF 949 replacement BUZ 36 philips master replacement guide 2SK2146 IRF540 substitution MOSFET TOSHIBA 2SK IRF510 substitution
Contextual Info: TMOS Power MOSFET Cross Reference This Cross Reference lists MOSFETs by either industry standard part number or by manufacturer’s part number for which there is an ON Semiconductor nearest or similar replacement. For devices not listed, or for additional

2SK2637

Contextual Info: • LD Series Lineup Type No. Package V OSS * * - V (V) *0 o Pd m Electrical characteristics at Ta = 25°C « tm » 'iifflP. Absolute maximum 1 VDss = 12 V, P-channel m Vostofl) min to max M 2SJ316 2SJ335 1.0 ±15 PCP ±10 XP5 FX601 XP6 ±15 Vg s = 4V VfigstOV

YTA630

Abstract: MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620
Contextual Info: Power MOSFETs Cross Reference Alphanumerically Part Number VDSS V RDS(ON) (ohm) ID (A) PD (W) Package 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 2SJ420 2SJ421 2SJ438 2SJ439 2SJ464 2SJ465 2SJ468 2SJ469 2SJ482 2SJ507 2SJ508 2SJ509

DSA0044716

Abstract: SR-52
Contextual Info: PRELIMINARY‡ 4 MEG x 16 ASYNC/PAGE/BURST FLASH MEMORY FLASH MEMORY MT28F644W30 MT28F644W18 1.8V Low Voltage, Extended Temperature Features • • • • • • • • • • • • • • • • • • • • • Figure 1: 56-Ball VFBGA Flexible 4Mb multi-partition architecture

FX110

Abstract: FX108
Contextual Info: 4 MEG x 16 ASYNC/PAGE/BURST FLASH MEMORY FLASH MEMORY MT28F644W30 1.8V Low Voltage, Extended Temperature Features Ball Assignment 56-Ball VFBGA • Flexible 4Mb multi-partition architecture • Single word 16-bit data bus Support for true concurrent operation with zero

FY-103

Abstract: 770MAX
Contextual Info: 4 MEG x 16 ASYNC/PAGE/BURST FLASH MEMORY FLASH MEMORY MT28F644W18 MT28F644W30 1.8V Low Voltage, Extended Temperature Features • • • • • • • Figure 1: 56-Ball VFBGA Flexible 4Mb multipartition architecture Single word 16-bit data bus Support for true concurrent operation with zero latency

Contextual Info: • Appiication Examples Schottky barrier diodes (Power MOSï-ETs'} ‘ i ' f ; i-'-4 f ■ Device Lineup ♦ Schottky Barrier Diodes Absolute maximum ratings (Ta s 25 C) Package Type No. SB007W03C CP V RRM ■o !fsm lF (V) (A) (A) (A) 0.07 2 0.07 2 20 2

SR52 W 18

Abstract: FX118 transistor marking A21 FY114 Fw*118 fw104 intel marking 28f intel package marking w18 marking PBA marking W18
Contextual Info: 4 MEG x 16 ASYNC/PAGE/BURST FLASH MEMORY FLASH MEMORY MT28F644W18 MT28F644W30 1.8V Low Voltage, Extended Temperature Features • • • • • • • Figure 1: 56-Ball VFBGA Flexible 4Mb multipartition architecture Single word 16-bit data bus Support for true concurrent operation with zero latency

d1878

Abstract: D1887 C4106 D1880 D1825 transistors D1878 c3987 C4161 D1651 k1459
Contextual Info: Transistors Type Number SAVYO In dex *:New products for Type No. Package Page Type No. Package Page Type No. Package 2SA Type NP 2SA1016.il A1177 SPA AI207 NP A1208 MP A1209 T0126 A 1246 NP A 1248 T0126 il A1249 A 1252 CP A 1253 SPA A1256 CP il Al 257 A1258

FX119

Abstract: FX117
Contextual Info: 4 MEG x 16 ASYNC/PAGE/BURST FLASH MEMORY FLASH MEMORY MT28F644W18 MT28F644W30 1.8V Low Voltage, Extended Temperature Features • • • • • • • Figure 1: 56-Ball VFBGA Flexible 4Mb multipartition architecture Single word 16-bit data bus Support for true concurrent operation with zero latency