44DBM Search Results

Contextual Info: FLM3742-25DA F, ¿¡U-,. r UJ11jU Internally Matched Power GaAs FETs FEATURES • • • • • • • High Output Power: P-idB = 44dBm Typ. High Gain: G ^ b = 10.5dB (Typ.) High PAE: r iadd = 36% (Typ.) Low IM3 = -45dBc@Po = 32dBm Broad Band: 3.7 ~ 4.2GHz

FLM4450-25D

Abstract: FUJI GaAs FET 25Q 328 FLM4450-25DA
Contextual Info: n FLM4450-25DA Internally Matched Power GaAs F E Ts . I FEATURES • • • • • • • High Output Power: P-idg = 44dBm Typ. High Gain: G-j^B = 9.5dB (Typ.) High PAE: riadd = 35% (Typ.) Low IM3 = -45dBc@Po = 32dBm Broad Band: 4.4 ~ 5.0GHz Impedance Matched Zin/Zout = 50Q

Contextual Info: RFPA1012 RFPA1012 GaAs HBT 400MHz to 2700MHz Power Amplifier GaAs HBT 400MHz TO 2700MHz POWER AMPLIFIER Package Style: DFN, 8-Pin, 2mm x 2mm Features High Linearity: OIP3 = 44dBm at 900MHz  Low Noise: NF = 3.5dB at 900MHz  Low DC Power: 5V, 90mA 

lmh6881

Abstract: ADC12D1800rf mixer ADC12D1800RF L6881
Contextual Info: LMH6881 DC to 2.4GHz, High Linearity, Programmable Differential Amplifier General Description The LMH6881 is a high-speed, high-performance, programmable differential amplifier. With a bandwidth of 2.4GHz and high linearity of 44dBm OIP3, the LMH6881 is suitable for

FLM0910-25F

Abstract: 103-61 s-parameter s11 s12 s21 10000 ED-4701 9.5-10.5GHz
Contextual Info: FLM0910-25F X-Band Internally Matched FET FEATURES ・High Output Power: P1dB=44dBm Typ. ・High Gain: G1dB=7.0dB(Typ.) ・High PAE: ηadd=30%(Typ.) ・Broad Band: 9.5～10.5GHz ・Impedance Matched Zin/Zout = 50Ω ・Hermetically Sealed Package DESCRIPTION

Contextual Info: FLM5964-25DA r UJ11bU Internally Matched Power GaAs FETs FEATURES • • • • • • • High Output Power: P ^ b = 44dBm Typ. High Gain: G ^ b = 8.5dB (Typ.) High PAE: r iadd = 33% (Typ.) Low IM3 = -45dBc@Po = 32dBm Broad Band: 5.9 ~ 6.4GHz Impedance Matched Zin/Zout = 50Q

L6881SQ

Contextual Info: LMH6881 www.ti.com SNOSC72D – JUNE 2012 – REVISED NOVEMBER 2012 LMH6881 DC to 2.4GHz, High Linearity, Programmable Differential Amplifier Check for Samples: LMH6881 FEATURES 1 • • • • • • • • • 23 Small Signal Bandwidth: 2400MHz OIP3 @ 100 MHz: 44dBm

Contextual Info: LMH6881 DC to 2.4GHz, High Linearity, Programmable Differential Amplifier General Description The LMH6881 is a high-speed, high-performance, programmable differential amplifier. With a bandwidth of 2.4GHz and high linearity of 44dBm OIP3, the LMH6881 is suitable for

9.5-10.5GHz

Contextual Info: FLM0910-25F X, Ku-Band Internally Matched FET FEATURES ・High Output Power: P1dB=44dBm Typ. ・High Gain: G1dB=7.0dB(Typ.) ・High PAE: ηadd =30%(Typ.) ・Broad Band: 9.5～10.5GHz ・Impedance Matched Zin/Zout = 50Ω ・Hermetically Sealed Package DESCRIPTION

FLM3742-25DA

Contextual Info: F|J ,. FLM3742-25DA Internally Matched Power GaAs FETs FEATURES • • • • • • • High Output Power: P-idg = 44dBm Typ. High Gain: G -j^B = 10.5dB (Typ.) High PAE: r iadd = 36% (Typ.) Low IM 3 = -45dBc@Po = 32dBm Broad Band: 3.7 ~ 4.2GHz Impedance Matched Zin/Zout = 50Q

FLM4450-25DA

Abstract: FLM4450-25D
Contextual Info: F, . FLM4450-25DA r UJ11 j U Internally Matched Power GaAs FETs FEATURES • • • • • • • High Output Power: P ^ b = 44dBm Typ. High Gain: G ^ b = 9.5dB (Typ.) High PAE: r!add = 35% (Typ.) Low IM3 = -45dBc@Po = 32dBm Broad Band: 4.4 ~ 5.0GHz Impedance Matched Zin/Zout = 50Q

ED-4701

Abstract: FLM0910-25F
Contextual Info: FLM0910-25F X-Band Internally Matched FET FEATURES ・High Output Power: P1dB=44dBm Typ. ・High Gain: G1dB=7.0dB(Typ.) ・High PAE: ηadd=30%(Typ.) ・Broad Band: 9.5～10.5GHz ・Impedance Matched Zin/Zout = 50Ω ・Hermetically Sealed Package DESCRIPTION

16 pin 4x4 amplifier gsm

Abstract: mch185C102kk MCH185A100DK ECJ-1VF1A105Z
Contextual Info: PRELIMINARY DATA SHEET ECP052 0.5 WATT POWER AMPLIFIER Features Applications 0.8GHz to 1GHz 28.0dBm P1dB High Linearity: 44dBm OIP3 High Efficiency: PAE > 50% 17dB Linear Gain High Reliability Class A or AB operation Basestations and Repeaters CDMA/GSM/TDMA/EDGE

FLM5964-25DA

Abstract: CS 5800
Contextual Info: lîrTCI FLM5964-25DA r UJI1bU Internally Matched Power GaAs F E Ts FEATURES • • • • • • • High Output Power: P-idg = 44dBm Typ. High Gain: G -j^B = 8.5dB (Typ.) High PAE: r iadd = 33% (Typ.) Low IM3 = -45dBc@Po = 32dBm Broad Band: 5.9 ~ 6.4GHz

9.5-10.5GHz

Contextual Info: FLM0910-25F X-Band Internally Matched FET FEATURES ・High Output Power: P1dB=44dBm Typ. ・High Gain: G1dB=7.0dB(Typ.) ・High PAE: ηadd=30%(Typ.) ・Broad Band: 9.5～10.5GHz ・Impedance Matched Zin/Zout = 50Ω ・Hermetically Sealed Package DESCRIPTION

FLM6472-25DA

Contextual Info: F| .ÇjU-, FLM6472-25DA Internally Matched Power GaAs FETs FEATURES • • • • • • • High Output Power: P ^ b = 44dBm Typ.) High Gain: G ^ b = 7.0dB (Typ.) High PAE: riadd = 32% (Typ.) Low IM3 = -45dBc@Po = 32dBm Broad Band: 6.4 ~ 7.2GHz Impedance Matched Zin/Zout = 50Q

EGN28B400M1B-R

Abstract: JESD22-A114 Sumitomo 1076
Contextual Info: EGN28B400M1B-R High Voltage - High Power GaN-HEMT for Radar FEATURES •High Voltage Operation : VDS=50V •High Power : 400W min. @ Pin=25W (44dBm) •High Efficiency: 50%(typ.) @ Pin=25W (44dBm) DESCRIPTION Sumitomo GaN-HEMT EGN28B400M1B-R offers high power, high

TOSHIBA HEMT

Abstract: TGI7785-120L
Contextual Info: MICROWAVE POWER GaN HEMT TGI7785-120L MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES „ HIGH POWER Pout=51.0dBm at Pin=44.0dBm „ HIGH GAIN GL=11.0dB at Pin=20.0dBm „ BROAD BAND INTERNALLY MATCHED HEMT HERMETICALLY SEALED PACKAGE „ LOW INTERMODULATION DISTORTION

Contextual Info: OPA 693 OPA6 93 OPA693 SBOS285 – OCTOBER 2003 Ultra-Wideband, Fixed Gain Video BUFFER AMPLIFIER with Disable FEATURES DESCRIPTION ● VERY HIGH BANDWIDTH G = +2 : 700MHz ● FLEXIBLE SUPPLY RANGE: +5V to +12V Single Supply ±2.5V to ±6V Dual Supplies ● INTERNALLY FIXED GAIN: +2 or ±1

47DBM

Contextual Info: News Release ⎜ www.linear.com 50Ohm IF Gain Block Provides 47dBm OIP3, 15.5dB Gain Consumes only 450mW MILPITAS, CA – September 18, 2012 – Linear Technology announces the LTC6431-15, a 15.5dB gain block that achieves high dynamic range in a 50Ohm environment from 20MHz to

Contextual Info: R3005300L R3005300L 30dB Reverse Hybrid 5MHz to 300MHz Low Current Package: SOT-115J The R3005300L is a hybrid reverse amplifier. The part employs a silicon die. It has extremely low distortion and superior return loss performance. The part also provides

large area quadrant photodiode

Abstract: ADS850 OPA2846 OPA842 OPA843 OPA846 OPA847
Contextual Info: OPA2846 SBOS274C −JUNE 2003 − REVISED AUGUST 2008 Dual, Wideband, Low-Noise, Voltage-Feedback Operational Amplifier FEATURES D D D D D D D D DESCRIPTION HIGH BANDWIDTH: 300MHz G = +10 The OPA2846 provides two very low-noise, high gain bandwidth, voltage-feedback op amps in a single

QFN24

Abstract: WCDMA* antenna WCDMA1700 NJG1658K34
Contextual Info: NJG1658K34 DP7T ANTENNA SWITCH GaAs MMIC Q GENERAL DESCRIPTION NJG1658K34 is a GaAs DP7T antenna switch IC designed for WCDMA/GSM multimode handsets. This switch can be operated by six bits control signal from 1.3V of logic high voltage. This switch features low insertion loss and low distortion. Also, the ESD

Contextual Info: OPA 693 OPA6 93 OPA693 SBOS285 – OCTOBER 2003 Ultra-Wideband, Fixed Gain Video BUFFER AMPLIFIER with Disable FEATURES DESCRIPTION ● VERY HIGH BANDWIDTH G = +2 : 700MHz ● FLEXIBLE SUPPLY RANGE: +5V to +12V Single Supply ±2.5V to ±6V Dual Supplies ● INTERNALLY FIXED GAIN: +2 or ±1