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MCH185A100DK Datasheets (1)

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ROHM

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
MCH185A100DK		ROHM	Ceramic Capacitors, Capacitors, CAP CER 10PF 50V NP0 0603	Original	PDF		10

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ROHM Semiconductor MCH185A100DK CAP CER 10PF 50V C0G/NP0 0603
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	MCH185A100DK	Tape & Reel			4,000	1 - 10 - 100 - 1000 - 10000 $0.01	Buy Now
Quest Components ()	MCH185A100DK		55,948			1 $0.04 10 $0.04 100 $0.04 1000 $0.04 10000 $0.01	Buy Now
	MCH185A100DK		2,400			1 $2.50 10 $2.50 100 $2.50 1000 $0.88 10000 $0.75	Buy Now
Component Electronics, Inc	MCH185A100DK		2,096			1 $0.31 10 $0.31 100 $0.23 1000 $0.20 10000 $0.20	Buy Now
KOA Speer Electronics Inc MCH185A100DK Cap Ceramic 10pF 50V C0G 0.5pF Pad SMD 0603 125°C T/R
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Bristol Electronics	MCH185A100DK		26,747			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Quest Components	MCH185A100DK		2,370			1 $0.04 10 $0.04 100 $0.04 1000 $0.01 10000 $0.01	Buy Now

MCH185A100DK Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Transistor BC 457 Abstract: MCH185CN104KK SOF-26 TAJA105K020R SPA-1426Z Contextual Info: SPA-1426Z SPA-1426Z 0.7GHz to 2.2GHz 1W InGaP HBT Amplifier 0.7GHz to 2.2GHz 1W InGaP HBT AMPLIFIER Package: SOF-26 Product Description Features RFMD’s SPA-1426Z is a high linearity single-stage class A Heterojunction Bipolar Transistor HBT power amplifier. The SPA-1426Z is made with InGaP-on-GaAs	Original	SPA-1426Z SOF-26 SPA-1426Z SOF-26 SPA-1426Z-EVB1 SPA-1426Z-EVB2 SPA-1426Z-EVB3 Transistor BC 457 MCH185CN104KK TAJA105K020R	PDF
bc 303 transistor Abstract: LL1608-FS3N9 TAJA105K020R MCH185A8R2JK GTEK MCH185CN104KK ML200D SOF-26 avg9 SPA1426Z Contextual Info: Preliminary SPA-1426Z Product Description Sirenza Microdevices’ SPA-1426Z is a high linearity single-stage class A Heterojunction Bipolar Transistor HBT amplifier housed in a surfacemountable plastic encapsulated package. This HBT amplifier is made with	Original	SPA-1426Z SPA-1426Z co105883 SPA-1426Z-EVB1 910MHz SPA-1426Z-EVB2 1960MHz SPA-1426Z-EVB3 bc 303 transistor LL1608-FS3N9 TAJA105K020R MCH185A8R2JK GTEK MCH185CN104KK ML200D SOF-26 avg9 SPA1426Z	PDF
SPA-1426 Abstract: Transistor BC 457 MCH185A8R2JK MCH185A221JK Contextual Info: SPA1426Z SPA1426Z 0.7GHz to 2.2GHz 1W InGaP HBT Amplifier 0.7GHz to 2.2GHz 1W InGaP HBT AMPLIFIER Package: SOF-26 NOT FOR NEW DESIGNS Product Description Features RFMD’s SPA1426Z is a high linearity single-stage class A Heterojunction Bipolar Transistor HBT power amplifier. The SPA1426Z is made with InGaP-on-GaAs	Original	SPA1426Z SPA1426Z SOF-26 SOF-26 Opt17] DS120601 SPA-1426 Transistor BC 457 MCH185A8R2JK MCH185A221JK	PDF
LDMOS NEC Contextual Info: NEC'S 3.2 V, 3 W, L/S BAND NE5520379A MEDIUM POWER SILICON LD-MOSFET FEATURES OUTLINE DIMENSIONS Units in mm • LOW COST PLASTIC SURFACE MOUNT PACKAGE PACKAGE OUTLINE 79A • HIGH OUTPUT POWER: +35.5 dBm TYP ��	Original	NE5520379A GSM900 HS350-P3 WS260 VP215 IR260 LDMOS NEC	PDF
J50 mosfet Abstract: LDMOS NEC Contextual Info: 3.2 V, 3 W, L/S BAND NE5520379A MEDIUM POWER SILICON LD-MOSFET FEATURES OUTLINE DIMENSIONS Units in mm • LOW COST PLASTIC SURFACE MOUNT PACKAGE PACKAGE OUTLINE 79A • HIGH OUTPUT POWER: +35.5 dBm TYP 1.5 – 0.2 4.2 Max Source • HIGH LINEAR GAIN: 16 dB TYP @ 915 MHz	Original	NE5520379A GSM900 24-Hour J50 mosfet LDMOS NEC	PDF
2052-5636-02 100pf Abstract: GSM900 MCH185A180JK NE5520379A NE5520379A-T1A NEC LDMOS Contextual Info: NEC'S 3.2 V, 3 W, L/S BAND NE5520379A MEDIUM POWER SILICON LD-MOSFET FEATURES OUTLINE DIMENSIONS Units in mm • LOW COST PLASTIC SURFACE MOUNT PACKAGE PACKAGE OUTLINE 79A • HIGH OUTPUT POWER: +35.5 dBm TYP 1.0 MAX. 4.4 MAX. Drain 0.8±0.15 9Z001 • CLASS AB OPERATION	Original	NE5520379A 9Z001 NE5520379A HS350-P3 2052-5636-02 100pf GSM900 MCH185A180JK NE5520379A-T1A NEC LDMOS	PDF
class h power amplifier schematic Abstract: MCH185A100DK ECJ1VF1A105Z ECP100 ECS-H1CC106R MCH185A101JK MCH185A180JK QFN-16 06035J0R5BBT L1123 Contextual Info: ECP100 PRELIMINARY DATA SHEET 1.0 WATT POWER AMPLIFIER Product Features Applications Basestations and Repeaters CDMA/GSM/TDMA/EDGE PCS/CDMA2000/IMT2000/UMTS Multi-carrier systems 100 - 2300MHz 31 dBm P1dB High Linearity: 47 dBm OIP3 High Efficiency: PAE > 45%	Original	ECP100 PCS/CDMA2000/IMT2000/UMTS 2300MHz 96GHz QFN-16 ECP100 SS-000535-000 class h power amplifier schematic MCH185A100DK ECJ1VF1A105Z ECS-H1CC106R MCH185A101JK MCH185A180JK QFN-16 06035J0R5BBT L1123	PDF
16 pin 4x4 amplifier gsm Abstract: amplifier QFN16 MCH185A3R3CK Contextual Info: ECP100 PRELIMINARY DATA SHEET 1.0 WATT POWER AMPLIFIER Product Features Applications Basestations and Repeaters CDMA/GSM/TDMA/EDGE PCS/CDMA2000/IMT2000/UMTS Multi-carrier systems 100 - 2300MHz 31 dBm P1dB High Linearity: 47 dBm OIP3 High Efficiency: PAE > 45%	Original	ECP100 2300MHz 96GHz PCS/CDMA2000/IMT2000/UMTS QFN-16 ECP100 ECP100G ECP100G-500 ECP100G-1000 ECP100D 16 pin 4x4 amplifier gsm amplifier QFN16 MCH185A3R3CK	PDF