NE5520379A-T1A Search Results
NE5520379A-T1A Datasheets (5)
Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
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NE5520379A-T1A |
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3.2 V 3 W L&s Band Medium Power Silicon LD-MOSFET(261) | Original | 125.51KB | 6 | ||
NE5520379A-T1A |
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Transistor - Datasheet Reference | Original | 71.63KB | 6 | ||
NE5520379A-T1A |
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3.2 V Operation Silicon RF Power LDMOS FET for GSM/DCS Dual-Band Phone Transmission Amplifiers | Original | 69.73KB | 11 | ||
NE5520379A-T1A |
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NECs 3.2 V, 3 W, L/S band medium power silicon LD-MOSFET. | Original | 161.56KB | 8 | ||
NE5520379A-T1A-A |
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NECs 3.2v 3w L/s Band Medium Power Silicon Ld-mosfet | Original | 308.02KB | 9 |
NE5520379A-T1A Price and Stock
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California Eastern Laboratories (CEL) NE5520379A-T1A-ARF MOSFET LDMOS 3.2V 79A |
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NE5520379A-T1A-A | Cut Tape |
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Renesas Electronics Corporation NE5520379AT1A3.2 V OPERATION SILICON RF POWER LDMOS FET FOR GSM/DCS DUAL-BAND PHONE TRANSMISSION AMPLIFIERS RF Power Field-Effect Transistor, 1-Element, L Band, Silicon, N-Channel, Metal-oxide Semiconductor FET |
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NE5520379AT1A | 13,000 |
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Renesas Electronics Corporation NE5520379A-T1A-AObsolete |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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NE5520379A-T1A-A | 566 |
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