44C4000 Search Results

44C4000

Abstract: KM44C4000
Contextual Info: 44C4000 CMOS DRAM 4 M X 4 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM 44C 4000 is a high speed CMOS 4 ,1 9 4 ,3 0 4 X 4 Dynamic Random Access Memory. Its design is optimized for high performance applications

8Mx32 dram

Abstract: Samsung Capacitor sse
Contextual Info: DRAM MODULE 32 Mega Byte KMM5328000AV/AVG Fast Page Mode 8Mx32 DRAM SIMM , 4K Refresh , 5V Using 16M DRAM with 400 mil Package G EN E R A L DESCRIPTION FEATURES • Performance Range: The Sam sung KMM5328000AV is a 8M bit x 32 tRAC 50ns 60ns 70ns 80ns D ynam ic RAM high density m em ory m odule. The

Contextual Info: DRAM MODULE 16 Mega Byte KMM5364000AH Fast Page Mode 4Mx36 DRAM SIMM , 4K Refresh , 5V Using 16M DRAM with 400 mil Package GENERAL DESCRIPTION FEATURES The Samsung KMM5364000AH is a 4M bit x 36 Dynamic RAM high density memory module. The • Performance Range:

44c400

Contextual Info: ORAM MODULE KMM372C402AK/AS KM M372C402AK/AS Fast Page Mode 4Mx72 DRAM DIMM with QCAS, 4K Refresh, 5V G EN ERA L DESCRIPTION FEATURES The Samsung KMM372C402A is a 4M bit x 72 Dynamic RAM high density memory module. The Samsung KMM372C402A consists of sixteen CMOS

Contextual Info: 44C4000 CMOS DRAM 4 M X 4 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION * Perform ance range: The Samsung KM 44C 4000 is a high speed CMOS 4 ,1 9 4 ,3 0 4 X 4 Dynamic Random Access Memory. Its design is optimized for high performance applications

Contextual Info: DRAM MODULE KMM372C400AK/AS KMM372C400AK/AS Fast Page Mode 4Mx72 DRAM DIMM with ECC, 4K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung KMM372C400A is a 4M bit x 72 Dynamic RAM high density memory module. The Samsung KMM372C400A consists of eighteen CMOS 4Mx4bit DRAMs in SOJ/TSOP-II 300mii

Contextual Info: DRAM MODULE 16 Mega Byte KMM5404000AK/AKG Fast Page Mode 4Mx40 DRAM SIMM , 4K Refresh , 5V Using 16M DRAM with 300 mil Package GENERAL DESCRIPTION FEATURES The Samsung KMM5404000AK is a 4M bit x 40 Dynamic RAM high density memory module. The Samsung KMM5404000AK consists of ten CMOS

KM44C4100BK

Contextual Info: KMM5324000BK/BKG KMM53241OOBK/BKG DRAM MODULE KMM5324000BK/BKG & KMM53241 OOBK/BKG Fast Page Mode 4M x32 DRAM SIM M , 4K & 2K Refresh, using 16M DRAM with 300 mil Package GENERAL DESCRIPTION FEATURES The Samsung KMM53240 1 00BK is a 4M bit x 32 • Part Identification

Contextual Info: DRAM MODULE 32 Mega Byte KMM5398000AKM Fast Page Mode 8M x39 DRAM SIM M , 4K Refresh , 5V Using 16 M DRAM with 300 mil Package G EN E R A L DES C R IPTIO N The Samsung KMM5398000AKM is a 6M bit x 39 Dynamic HAM high density memory module. The Samsung KMM5398000AKM consists of twenty

41C16100

Abstract: 24-PIN 41C16000
Contextual Info: MEMORY ICs D yn am ic R A M Capacity Continued Part Number 16M i FUNCTION GUIDE Organization Speed(ns) Features Technology Packages Remark * KM418V256ALLT 256K X 1B 70/80 CMOS Fast Page(3.3V) 40 Pin TSOP-ll(Forward) Now * KM418V256ALLTR 256K X 18 70/80 CMOS

44c4000

Contextual Info: CMOS DRAM 44C4000 4 M X 4 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM 44C 4000 is a high speed CMOS 4 ,1 9 4 ,3 0 4 X 4 Dynamic Random Access Memory. Its design is optimized for high performance applications

AO2020

Contextual Info: DRAM MODULE 32 Mega Byte KMM5368000AH Fast Page Mode 8Mx36 DRAM SIMM , 4K Refresh , 5V Using 16M DRAM with 400 mil Package GENERAL DESCRIPTION FEATURES The Samsung KMM5360OOOAH is a 0M bit x 36 Dynamic RAM high density memory module. The Samsung KMM5368000AH consists of eighteen

Contextual Info: DRAM MODULE 16 Mega Byte KMM5364003AK/AKG Fast Page Mode 4Mx36 DRAM SIMM, 4K Refresh, 5V Using 16M Quad CAS DRAM G EN E R A L DESCRIPTIO N / FEATURES • Performance Range: The Sam sung KMM5364003AK is a 4M bit x 36 D ynam ic RAM high density m em ory module using

41C464

Abstract: 41C1000 TC55B8128 424170 NEC CY70199 44C1000 IOT7164 HN62308BP HN62404P TC5116100
Contextual Info: MEM ORY ICs CRO SS REFERENCE GUIDE 3. C R O SS REFERENCE GUIDE 3.1 DRAM Density 25 6 K Org. X 1 X 4 1M X 1 X 4 4M X 1 X 4 x8 16M M ode Sa m su n g F. Page KM 41C256 TC 51256 N ibble KM 41C257 TC 51257 S. C o lu m n KM 41C258 TC 51258 H M 51 258 MB81258 F. Page

Contextual Info: DRAM MODULE 16 Mega Byte KMM5364003AK/AKG Fast Page Mode 4Mx36 DRAM SIMM, 4K Refresh, 5V Using 16M Quad CAS DRAM GENERAL DESCRIPTION FEATURES • P e rfo rm an ce R ange: T h e S a m s u n g K M M 5 3 6 4 0 0 3 A K is a 4M b it x 36 D y n a m ic R A M h ig h d e n s ity m e m o ry m o d u le u sin g

tca 761

Abstract: 44C4000-6 KM44C4000
Contextual Info: CMOS DRAM 44C4000 4 M X 4 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung K M 44C 4000 is a high speed CMOS 4 ,1 9 4 ,3 0 4 X 4 Dynamic Random Access Memory. Its design is optimized for high performance applications

Contextual Info: PRELIMINARY CMOS DRAM 44C4000 4 M X 4 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Perform ance range: The Samsung K M 44C 4000 is a high speed CMOS 4 ,1 9 4 ,3 0 4 X 4 Dynamic Random Access Memory. Its design is optimized for high performance applications

intel 82c51

Abstract: Mitsubishi 82c54 intel p8085a PD8155H 51V16160 nec 8212c 82C55 harris 82c55 82C59 toshiba m5l8288
Contextual Info: M em ory 16-M eg D R A M s Refresh Toshiba NEC Hitachi Samsung Micron M SM 5116100 OKI Part Number Configuration 16 M e g x 1 5 4K T C 5 1 1610 0 p P D 4 2 1 6100 HM 5116100 KM41C16000 M T4C16M 1A1 M S M 5 1 1 616 0 1 M e g x 16 5 4K TC5116160A H PD 4216160

Contextual Info: KMM372C402AK/AS DRAM MODULE KMM372C402AK/AS Fast Page Mode 4Mx72 DRAM DIMM with QCAS, 4K Refresh, 5V FEATURES G EN ERA L DESCRIPTION T h e S a m s u n g K M M 3 7 2 C 4 0 2 A is a 4M bit x 72 D y n a m ic R A M h ig h d e n s ity m e m o ry m o d u le . The

Contextual Info: DRAM MODULE KMM364C400AK/AS KMM364C400AK/AS Fast Page Mode 4Mx64 DRAM DIMM based on 4Mx4, 4K Refresh, 5V G EN ERA L DESCRIPTION FEATURES • Performance Range: The Samsung KMM364C400A is a 4M bit x 64 tRAC tCAC KMM364C400A - 5 50ns 18ns KMM364C400A - 6 60ns

Contextual Info: DRAM MODULE 16 Mega Byte KM M5324000AV/AVG Fast Page Mode 4Mx32 DRAM SIMM , 4K Refresh , 5V Using 16M DRAM with 400 mil Package . G EN E R A L D ES C R IPTIO N FEATURES • Performance Range: The Sam sung KMM5324000AV is a 4M bit x 32 tRAC 50ns 60ns 70ns 80ns

KMCJ532512

Abstract: KM23C1000-20 KM28C64B KMM594 KM718B90-12 zip 40pin 30-pin simm memory "16m x 8" KM41C4000C-6 KM41C16000ALL KM48V2104AL
Contextual Info: FUNCTION GUIDE MEMORY ICs 1. 1.1 INTRODUCTION Dynamic RAM KM41C1000C-6 1Mx1 KM41C1000CL-6 KM41C1000CSL-6 25 6Kx4 KM44C256C-6 KM44C256CL-6 KM44C256CSL-6 4Mbit— 4Mx1 T KM41C4000C-5 — KM41C4000C-6 KM41C4000C-7 KM41C4000C-8 KM41C4000CL-5 KM41C4000CL-6 KM41C4000CL-7

Contextual Info: KMM5328000BK/BKG KMM53281OOBK/BKG DRAM MODULE KMM5328000BK/BKG & KMM53281 OOBK/BKG Fast Page Mode 8Mx32 DRAM SIMM , 4K & 2K Ref, using 16M DRAM with 300 mil Package GENERAL DESCRIPTION FEATURES T h e S a m su n g KM M 53280 1 O O B K is a 8M b it x 32 • P a rt Id e n tificatio n

NEC D2732

Abstract: 41C1000 41256 81c4256 6264 SRAM 44256 dram NEC 2732 nec 4217400 814400 Texas Instruments eprom 2732
Contextual Info: New Page 1 DRAM ORGANIZATION/ DENSITY FUJISTU GOLDSTAR HITACHI HYNDAI MB GM HM HY 256K x 1 256K 81256 71C256 51256 MICRON MT 53C256 1256 MITSUBISHI M5M 4256 1M x 1(1M) 81C1000 71C1000 511000 531000 4C1024 41000 256K x 4(1M) 81C4256 71C4256 514256 534256 4C4256