KMM53281 Search Results

Contextual Info: KMM5328004BK/BKG KMM5328104BK/BKG DRAM MODULE KMM5328004BK/BKG & KMM5328104BK/BKG Fast page with EDO Mode 8Mx32 DRAM SIMM, 4K & 2K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung KMM53280 1 04BK is a 8M bit x 32 Dynamic RAM high density memory module. The

Contextual Info: KMM5328000CK/CKG KMM53281OOCK/CKG DRAM MODULE KMM5328000CK/CKG & KMM53281 OOCK/CKG with Fast Page Mode 8M x 32 DRAM SIMM using 4Mx4, 4K/2K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung KMM53280 1 00CK is a 8Mx32bits RAM high density Dynamic , Part Identification

Contextual Info: KMM5328100V/VG/VP DRAM MODULES 8 M x 3 2 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: tR A C KMM5328100V-6 60ns 15ns 110ns KMM5328100V-7 70ns 20ns 130ns KMM5328100V-8 80ns 20ns 150ns The KMM5328100V is a S ingle in-line M em ory M odule

KM44C4104bk

Contextual Info: KMM5328004B K/B KG KMM5328104BK/BKG DRAM MODULE KMM5328004BK/BKG & KMM5328104BK/BKG Fast page with EDO Mode 8Mx32 DRAM SIMM, 4K & 2K Refresh, 5V G EN ERA L D ESCRIPTIO N The Samsung KMM53280 1 04BK is a 8M bit x 32 FEATURES • Part Identification Dynamic RAM high density memory module. The

"30 pin simm"

Abstract: 30-pin simm memory "16m x 8" KM68512 256K x 8 SRAM dip 30-pin SIMM RAM 30-pin SIMM 30 pin simm
Contextual Info: FUNCTION GUIDE MEMORY ICs 2.2 Dynamic RAM Module Continued Based Component 16M DRAM Base 2.3 Part Number Organization KMM53281OOV/VG/VP KMM5368100G KMM5368000H/HG KMM5368100H/HG KMM5816000T KMM5816100T KMM5916000T KMM5916100T 8Mx32 8M x 36 8Mx36 8M X 36

Contextual Info: KMM5328004CK/CKG KMM5328104CK/CKG DRAM MODULE KMM5328004CK/CKG & KMM5328104CK/CKG Fast Page Mode with EDO Mode 8M x 32 DRAM SIMM using 4Mx4, 4K/2K Refresh, 5V GENERAL DESCRIPTION FEATURES T h e S a m s u n g K M M 5 3 2 8 0 1 0 4 C K is a 8 M x3 2 b its

Contextual Info: KMM5328000CS/CSG KM M53281OOCS/CSG DRAM MODULE KMM5328000CS/CSG & KMM53281 OOCS/CSG with Fast Page Mode 8M x 32 DRAM SIMM using 4Mx4, 4K/2K Refresh, 5V GENERAL DESCRIPTION FEATURES The S am su ng K M M 53 28 0 1 0 0C S is a 8M x3 2b its RAM high de nsity . Part Identification

KMM5328000CK

Abstract: KMM5328000CKG KMM5328100CK KMM5328100CKG
Contextual Info: KMM5328000CK/CKG KMM5328100CK/CKG DRAM MODULE KMM5328000CK/CKG & KMM5328100CK/CKG with Fast Page Mode 8M x 32 DRAM SIMM using 4Mx4, 4K/2K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung KMM53280 1 00CK is a 8Mx32bits Dynamic RAM high density memory module. The Samsung

AG S53

Abstract: 5328-1
Contextual Info: DRAM MODULE 32 Mega Byte KMM53281OOAKV/AKVG Fast Page Mode 8Mx32 DRAM SIMM , 2K Refresh , 5V Using 16M DRAM with 300mil Package GENERAL DESCRIPTION FEATURES • P e rfo rm an ce R ange: The S a m s u n g K M M 5 3 2 8 1 0 0 A K V is a 4 M b it x D y n a m ic R A M h ig h d e n s ity m e m o ry m o d u le . T h e

Contextual Info: KMM5328000BK/BKG KMM53281OOBK/BKG DRAM MODULE KMM5328000BK/BKG & KMM53281 OOBK/BKG Fast Page Mode 8Mx32 DRAM SIMM , 4K & 2K Ref, using 16M DRAM with 300 mil Package GENERAL DESCRIPTION FEATURES T h e S a m su n g KM M 53280 1 O O B K is a 8M b it x 32 • P a rt Id e n tificatio n

Contextual Info: KMM5328000BK/BKG KMM53281OOBK/BKG DRAM MODULE KMM5328000BK/BKG & KMM53281 OOBK/BKG Fast Page Mode 8Mx32 DRAM SIMM , 4K & 2K Ref, using 16M DRAM with 300 mil Package G EN ER AL DESCRIPTIO N FEATURES • Part Identification - KMM5328000BK 4096 cycles/64 ms Ref, SOJ, Solder

Contextual Info: SAMSUNG ELECTRONICS INC b?E D • 7 ^ 4 1 4 5 QQ152fit. 0^0 I SMGK KM M53281OOV/VG/VP DRAM MODULES 8 M x 3 2 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM5328100V is a 8M bit x 32 Dynamic RAM high density memory module. The Samsung

KMM5328100AV

Contextual Info: DRAM MODULE 32 Mega Byte KMM53281OOAV/AVG Fast Page Mode 8Mx32 DRAM SIMM , 2K Refresh , 5V Using 16M DRAM with 400mil Package G EN ERA L D ES C R IPTIO N FEATURES The Samsung KMM5328100AV is a 4M bit x 32 Dynamic RAM high density memory module. The Samsung KMM5328100AV consists of sixteen

Contextual Info: KM M5328004CS/CSG KM M5328104CS/CSG DRAM MODULE KMM5328004CS/CSG & KMM5328104CS/CSG Fast Page Mode with EDO Mode 8M x 32 DRAM SIMM using 4Mx4, 4K/2K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung KMM53280 1 04CS is a 8Mx32bits RAM high density , Part Identification

Contextual Info: KMM5328004CK/CKG KMM5328104CK/CKG DRAM MODULE KMM5328004CK/CKG & KMM5328104CK/CKG Fast Page Mode with EDO Mode 8M x 32 DRAM SIMM using 4Mx4, 4K/2K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung KM M 53280 1 04CK is a 8Mx32bits RAM high density KMM53280(1 )04CK

Contextual Info: DRAM MODULE 32 Mega Byte KMM53281OOAV/AVG Fast Page Mode 8Mx32 DRAM SIMM , 2K Refresh , 5V Using 16M DRAM with 400mil Package GENERAL DESCRIPTION FEATURES The Samsung KMM5328100AV is a 4M bit x 32 Dynamic RAM high density memory module. The Samsung KMM5328100AV consists of sixteen

VG264265B

Abstract: TC5117405CSJ hyundai cross reference guide TC51V16160 Micron 4MX32 EDO SIMM dram cross reference cross reference tc5117800cft SAMSUNG Cross Reference
Contextual Info: Cross Reference Guide 1.3. Cross Reference Guide 1.3.1. Cross Reference of 256kxl6 DRAM Vendors\Configuration VIS Hitachi Hyundai Micron Motorola NEC Samsung Toshiba TI 256kxl6, 5V, EDO VG264265B HM514265D HY514264B MT4C16270 N/A PD4244265LE KM416C254D TC5144265D

23C1001

Abstract: KMM5334100 km 23c 4000B KMM5362003C KM681001-25 KM68V257 KM428V256 23c4001 4100C M681000
Contextual Info: FUNCTION GUIDE MEMORY ICs 1. INTRODUCTION 1.1 Dynamic RAM 1Mx1 KM41C1000C-6 KM41C1000CL-6 KM41C1000CSL-6 256Kx4 4Mbit— 4Mx1 KM44C256C-6 KM44C256CL-6 KM44C256CL-7 KM 44C256CL-8 - KM44C256CSL-6 KM44C256CL-7 KM 44C256CL-8 — KM41C4000C-7 — KM41C4000C-8 KM41C4000C-5

1Mx9 DRAM 30-pin SIMM

Abstract: KMM594000C 30 pin simm 8mx32 simm 72 pin 4Mx9 DRAM 30-pin SIMM 4MX39 1mx33 4m dram 72-pin simm 32 DRAM 30-pin SIMM
Contextual Info: 2. Product Guide Org. Part No. Feature Speed ns Package PCB Height Refresh cycle/ms C/S 650 1024/16 NOW DRAM SIMM Based on 4M DRAM 1Mx8 KMM581000CN 1Mx9 4Mx8 4Mx9 F/P 60/70/80 S, 30 Pin SIMM KMM591000CN F/P 60/70/80 S, 30 Pin SIMM 650 1024/16 NOW KMM584000C

1004CL

Abstract: 44V16 366F 44C40 372V3280 2100B-7 M5368 KMM5368103B 44v16100 dram module kmm 2mx32
Contextual Info: FUNCTION GUIDE 1. INTRODUCTION DRAM Module I. Single In-Line M em ory M odule SIMM l-i. Fast Page ( FP ) Mode 5 V [T6M~Based j- f — ftM x 3 g "KMM5321200BW/BWG-6 H ~KM M 5321200BW/BWG-&#39; -|lM x 3 6 [2MX32 KMM5322100BKU/BKUG-5 K —[2Mx36 H H | KMM5322100BKÜ/BKÛ g ^K 1<M M 5322-| OOBKU/BKUG3-7

KMM366F213BK6

Abstract: KMM364E124BJ6 KMM366F213BK-6 KMM374F410BK6 83AK KMM366F410BK6 KMM374F400BK6 KMM366F400BK6 124BT-L7 KMM364C12
Contextual Info: MEMORY ICs FUNCTION GUIDE 1. INTRODUCTION DRAM Module I. Single In-Line Memory Module SIMM l-l. Fast Page ( FP ) Mode ;16MBased 2Mx36 4Mx32 4Mx3fi 8Mx32 8Mx3C 64MBased>- KMM5321200BW/BWG-6.Tf KMM5321200BW/BWGKMM5361203BW/BWG-6 KMM5361203BW/BWG-7 KMM5322200BW/BWG-6 KMM5322200BW/BWG-7

M5916

Abstract: 533410 M5402 KMM591000CN-7 KMM5334100
Contextual Info: 1. INTRODUCTION Dynamic RAM Module 14M Based } ; - ilM x 8 "11Mx9 1KMM581000CÑ-6 HKMM58100ÒCN-7 IKMM581000CN-8 j • KMM591000CN-6 : ¡]KMM591000CN-7~ ~~~ffKMM591000CN-8 [4Mx8 J - ]4Mx9 .KMM584Q0ÒC-5 jjKM M584Q00C-6 ] KMM584000C-7 _ |K M M 584000C-8 - 1KMM594000C-5

KMM5334100

Abstract: LM 8227 KMM591000CN-6 LM 8251 m53641 KMM5368103A y 4m 1/Detector/"Detector IC"/"CD"/4Mx8 dram simm
Contextual Info: TABLE OF CONTENTS I .F UNC TI ON GUIDE 1. 2. Product G uide. 13

1MX16

Abstract: KMM5324104BK KMM5321200B
Contextual Info: MEMORY ICs FUNCTION GUIDE 2. PRODUCT GUIDE DRAM Module Org. Part No. Feature 4 Byte Single In-Line Memory Module 5 V 1Mx32 1Mx36 2Mx32 4Mx36 8Mx32 8Mx36 1— -— — r ÍF P .S G , PPD 1Mx16, SOJ 60/70 750 1024/16 r ~ m o w KMM5321200BW/BWG