300MII Search Results

Contextual Info: DRAM MODULE KMM372C400AK/AS KMM372C400AK/AS Fast Page Mode 4Mx72 DRAM DIMM with ECC, 4K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung KMM372C400A is a 4M bit x 72 Dynamic RAM high density memory module. The Samsung KMM372C400A consists of eighteen CMOS 4Mx4bit DRAMs in SOJ/TSOP-II 300mii

Contextual Info: TIEPAL10016P8-3C HIGH-PERFORMANCE ExCL mP A l CIRCUIT D 30 83. D EC E M B E R 1987 • ECL 100K PAL • High-Performance Operation Propagation Delay . . . 3 ns Max JT PACKAG E TOP VIEW I e e • • ■ - 2 2 0 mA Max • Replacement for 100K ECL Logic

Contextual Info: TM4EP72BPB, TM4EP72BJB, 4194304 BY 72-BIT TM4EP72CPB, TM4EP72CJB 4194304 BY 72-BIT EXTENDED-DATA-OUT BUFFERED DYNAMIC RAM MODULES _ _ • • • • Long Refresh Periods: - TM4EP72CxB: 64 ms 4096 Cycles

Contextual Info: SN54F30, SN74F30 8-INPUT POSITIVE-NANO GATES D2932, MARCH 1987-R E V ISE D JANUARY 1989 SN 54F30 . . . J PACKAG E SN 74F30 D OR N P A C K A G E Package Options Includa Plastic "Sm all Outline" Packages, Ceramic Chip Carriers, and Standard Plastic and Ceramic 300-mII

Contextual Info: 74ACT11112 DUAL J-K NEGATIVE-EDGE-TRIGGERED FLIP-FLOP WITH CLEAR AND PRESET _ SCAS064A - D3339. JUNE 1989 - REVISED APRIL 1993 D OR N PACKAGE TOP VIEW Inputs Are TTL-Voltage Compatible Fully Buffered to Offer Maximum Isolation

2yl6

Abstract: 74ALS38aM
Contextual Info: SN74ALS38A, SN54ALS38A QUADRUPLE 2-INPUT POSITIVE-NAND BUFFERS WITH OPEN-COLLECTOR OUTPUTS D2661, A PRIL 1982 - R EV ISED M A Y 1986 • • SN 54ALS38A Package Options Include Plastic '"Small Outline" Packages, Ceramic Chip Carriers, and Standard Plastic and Ceramic 300-mii

LVT16500

Abstract: SN54LVT16500 SN74LVT16500
Contextual Info: SN54LVT16500, SN74LVT16500 3.3-V ABT 18-BIT UNIVERSAL BUS TRANSCEIVERS WITH 3-STATE OUTPUTS SC BS146A-M AY 1 9 9 2 - REVISED MARCH 1994 State-of-the-Art Advanced BiCMOS Technology ABT Design fo r 3.3-V Operation and Low-Static Power Dissipation Members of the Texas Instruments

ABT22V10-7A

Abstract: ABT22V10-7D ABT22V10-7N
Contextual Info: PROGRAMMABLE LOGIC PRODUCTS A B T 2 2 V 1 0 -7 c o m m e r c ia l A B T 2 2 V 1 0 A /B (MILITARY) Low noise, high drive, metastable immune, PLD Product specification (Commercial) Preliminary specification (Military) April 22, 1994 March 1994 Philips Semiconductors

SN74ACT7803

Abstract: SN74ACT7805 SN74ACT7813
Contextual Info: SN74ACT7803 512 x 18 CLOCKED FIRST-IN, FIRST-OUT MEMORY SCAS191 - MARCH 1991 - REVISED MARCH 1992 DL PACKAGE TOP VIEW • Member of the Texas Instruments W id e b u s F a m ily • Free-Running Read and Write Clocks Can Be Asynchronous or Coincident U 56

100A484

Contextual Info: HIGH-SPEED BiCMOS ECL STATIC RAM 16K 4K x 4-BIT SRAM PRELIMINARY IDT10A484 IDT100A484 IDT101A484 FEATURES: DESCRIPTION: • • • • • • • • The IDT10A484, IDT1OOA484 and IDT101A484 are 16,384bit high-speed BiCEMOS ECL static random access

KM44C4004B

Contextual Info: KM44C4004BS CMOS DRAM ELECTRONICS 4M x 4 Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 4,194,304 x 4 bit Extended Data Out CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power

311 JRC

Contextual Info: r z j SGS-THOMSON ^ 7 # » ST62T08 K f lO Ê W IlU K g iM IM lK g ê 8-BIT OTP MCUs • ■ ■ ■ ■ ■ ■ 3.0 to 6.0V Supply Operating Range 8 MHz Maximum Clock Frequency -40 to +85°C Operating Temperature Range Run, Wait and Stop Modes 4 Interrupt Vectors

ICT 18CV8P

Abstract: 18cv8p 18CV8J 18cv8p-25 ict peel 18cv8 ICT Peel 18CV8J 25 PEEL programming 18CV8 PEEL18CV8P-25
Contextual Info: Commercial/ Industrial INC. PEEL 18CV8 -5/-7/-10/-15/-25 CMOS Programmable Electrically Erasable Logic Device Features Architectural Flexibility — 74 product term x 36 input array — Up to 18 inputs and 8 I/O pins — 12 possible macrocell configurations

Contextual Info: HM514405C Series Preliminary 1,048,576-word x 4-bit Dynamic Random Access Memory HITACHI The Hitachi HM 514405C is a CMOS dynamic RAM o rganized 1,048,576 w ords x 4 bits. HM514405C has realized higher density, higher performance and various functions by employing

IPDM41027S

Abstract: PDM1027 PDM41027 52HA
Contextual Info: PARADIGM 1 M egabit Static RAM 1 M eg x 1-Bit PDM41027S PDM41027L Features Description □ High speed access times Com'l: 20, 25, 35 and 45ns M il: 20, 25, 35, 45, and 55n □ Low power operation - PDM41027S Active: 400mW typ. Standby: 150 mW (typ.) - PDM41027L

AMD am3 socket pinout

Abstract: amd socket am3 pinout AMD 140 Socket AM3 amd pinout diagram socket AM3 MR 4710 AMD Socket AM3 amd AM3 PIN LAYOUT MR 4710 IC OO3A MARKING AMD socket AM3 pin diagram
Contextual Info: ADV MI CRO PLA/PLE/ARRAYS COM’L SÛE 02S7S2b D 0 0 8 =1 4 4 3 3 B A MDS MIL E T—46— 19-13 Advanced Micro Devices PAL20R8 Family 24-pin TTL Programmable Array Logic DISTINCTIVE CHARACTERISTICS • As fast as 7.5 ns maximum propagation delay Easy design w ith PALASM softw are

5d-22

Abstract: 74F543 N74F543N 74F373 74F543DB 74F544 N74F543D N74F544D N74F544N 74F543D
Contextual Info: Philips Semiconductors FAST Products Product specification Octal registered transceivers 74F543 74F544 74F543, 74F544 Octal registered transceiver, non-inverting 3-State Octal registered transceiver, inverting 93-State) FEATURES FUNCTIONAL DESCRIPTION • Combines74F245 and 74F373 type functions in one chip

74F181

Abstract: N74F181D N74F181N
Contextual Info: FAST 74F181 Arithmetic Logic Unit 4-Bit Arithmetic Logic Unit Product Specification FAST Products FEATURES • Provides 16 arithmetic operations: add, subtract, compare, and double; plus 12 other arithmetic operations • Provides all 16 logic operations of two variables: Exclusive-OR,

Am29CPL151

Abstract: TCO12 tco122 8006 1d AMD 707 024810
Contextual Info: L 2 8 1991 COM’L: 25/33 MIL:-25 Z I Am29CPL151H-25/33 Advanced Micro Devices CMOS 64-Word Field-Programmable Controller FPC DISTINCTIVE CHARACTERISTICS • Implements complex state machines Up to 33-MHz maximum frequency ■ High-speed, low-power CMOS EPROM

SMD 5 PIN PAL1

Abstract: 74F5074 74F74
Contextual Info: Philips Semiconductors Product specification BiCMOS versatile PAL device ABT22V1OA/B DESCRIPTION APPLICATIONS The ABT22V10 is a versatile PAL1 device fabricated with the Philips BiCMOS process known as QUBiC. The QUBiC process produces a very high speed device 1 Ons worst case which has excellent noise

Contextual Info: KMM372V400AK/AS DRAM MODULE KMM372V400AK/AS Fast Page Mode 4Mx72 DRAM DIMM with ECC, 4K Refresh, 3.3V GENERAL DESCRIPTION FEATURES The Samsung KMM372V400A is a 4M bit x 72 Dynamic RAM high density memory module. The Samsung KMM372V400A consists of eighteen

74AC11378

Abstract: 74AC11378D 74AC11378N 74ACT11378 74ACT11378D 74ACT11378N
Contextual Info: Philips Components— Signetics Document No. 853-1497 ECN No. 00731 Date of Issue October 17,1990 Status Product Specification 74AC/ACT11378 Hex D-type flip-flop with enable, positive-edge trigger ACL Products FEATURES • Output capability: ±2 4 mA • Positive edge-triggered clock

Contextual Info: LH52258A CMOS 32K x 8 Static RAM When E is LOW and W is HIGH, a static Read will occur at the memory location specified by the address lines. G must be brought LOW to enable the outputs. Since the device is fully static in operation, new Read cycles can be

Contextual Info: SN54HCT534, SN74HCT534 O C TAL D T Y P E EDGE TRIGGERED FLIP-FLOPS W ITH 3-STATE OUTPUTS D2804, MARCH 1984—REVISED SEPTEMBER 1987 Inputs are TTL-Voltage Compatible High-Current 3-State Inverting Outputs Can Drive Up to 15 LSTTL Loads TOP VIEW Package Options Include Plastic "Small