419-1 TRANSISTOR Search Results

Contextual Info: LESHAN RADIO COMPANY, LTD. General Purpose Transistor PNP Silicon LMBT2907AWT1G FEATURE Pb-Free Package is available. 3 ORDERING INFORMATION 1 r Marking Device Shipping 2 LMBT2907AWT1G 20 3000/Tape&Reel LMBT2907AWT3G 20 10000/Tape&Reel CASE 419–02 , STYLE 3

Contextual Info: LESHAN RADIO COMPANY, LTD. Dual Switching Diodes LBAW56WT1G z Pb-Free Package is Available. 3 DEVICE MARKING 1 LBAW56WT1G = A1 2 MAXIMUM RATINGS TA = 25°C CASE 419–04, STYLE 4 Rating Symbol Max Unit Reverse Voltag VR Forward Current Peak Forward Surge Current

fair child power switch

Contextual Info: P A I R C H I I - D s e m ic o n d u c t o r w w w .fa ir c h ild s e m i.c o m tm R C 419 1 /R C 4 1 9 2 /R C 4 1 93 Micropower Switching Regulator Features • • • • • • • • • • High efficiency - 8 5 % typical Low quiescent current - 2 1 5 nA

DG417CJ

Contextual Info: yM X X U M 19-0114; Rev 1:3/94 , Improved SPST/SPDT Analog Switches N e w Features The DG417/DG418 are single-pole/single-throw SPST sw itch es. The DG417 is norm ally clo sed , and the D G 418 is n o rm a lly op e n . The D G 419 is s in g le ­ pole/double-throw (SPDT) with one normally closed

2SA1046

Abstract: 2N3055 BU108 transistor K 3596 BU326 BU100 TL MJE2955T MJE3055T 2N3174 2SC936
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N6251 High Voltage NPN Silicon Power Transistors 15 AMPERE POWER TRANSISTOR NPN SILICON 350 VOLTS 175 WATTS . . . designed for high voltage inverters, switching regulators and line operated amplifier applications. Especially well suited for switching power supply applications.

BU108

Abstract: BDT3 2SC1943 2SC1419 BU326 BU100
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE8503A* Advance Information SWITCHMODE Series *Motorola Preferred Device NPN Bipolar Power Transistor POWER TRANSISTORS 5.0 AMPERES 1500 VOLTS — BVCES 80 WATTS The MJE8503A transistor is designed for high voltage, high speed, power switching

mj15003 equivalent

Abstract: 2n3055 MJ15003 2N3055 BU108 motorola MJ15003 BDX54 MJ15004 BU326 BU100
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN Complementary Silicon Power Transistors MJ15003* PNP MJ15004* The MJ15003 and MJ15004 are PowerBase power transistors designed for high power audio, disk head positioners and other linear applications. • High Safe Operating Area 100% Tested —

MJ2955 replacement

Abstract: BU108 2SA1046 MJE172 BU326 BU100
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N5038* 2N5039 NPN Silicon Transistors *Motorola Preferred Device . . . fast switching speeds and high current capacity ideally suit these parts for use in switching regulators, inverters, wide–band amplifiers and power oscillators in

2N3055 TO220

Abstract: BD130 NPN Transistor BD241 3221 3900 2SA49 bipolar transistor td tr ts tf MJE350 equivalent SE9302 MJE2482 2SC1419
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN TIP29B TIP29C PNP TIP30B TIP30C Complementary Silicon Plastic Power Transistors . . . designed for use in general purpose amplifier and switching applications. Compact TO–220 AB package. ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

BU108

Abstract: 2SA1046 BDX54 BU326 BU100
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N5745 See 2N4398 2N5758 High-Voltage High-Power Silicon Transistors 6 AMPERE POWER TRANSISTOR NPN SILICON 100 – 140 VOLTS 150 WATTS . . . designed for use in high power audio amplifier applications and high voltage

BUS48AP

Abstract: 2SC1381 mje15033 replacement 2SA698 BD477 BD139.16 2N307 2SC1224 2SD549 BD139.10
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD166 Plastic Medium Power Silicon PNP Transistor 1.5 AMPERE POWER TRANSISTOR PNP SILICON 45 VOLTS 20 WATTS . . . designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits.

2SA1046

Abstract: TIP147 pwm BU108 TO218 20A Darlington BU326 BU100 MJ423 motorola transistor 2N6547
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N6547  Data Sheet Designer's Switchmode Series NPN Silicon Power Transistors The 2N6547 transistor is designed for high–voltage, high–speed, power switching in inductive circuits where fall time is critical. They are particularly suited for 115 and

transistor 2SA1046

Abstract: 2SC106 BD262 2SC1419 SE9302 2N6107 BD263 ST T4 3580 FT48 MJE34 equivalent
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN TIP33B* TIP33C PNP TIP34B* TIP34C Complementary Silicon High-Power Transistors . . . for general–purpose power amplifier and switching applications. • • • • 10 A Collector Current Low Leakage Current — ICEO = 0.7 mA @ 60 V

IR642

Abstract: 2N6410 IR3001 2SD375 2SC931 bu180 BU108 BD411-8 bu500 BD661
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN BD787 PNP BD788 Complementary Plastic Silicon Power Transistors . . . designed for lower power audio amplifier and low current, high–speed switching applications. • Low Collector–Emitter Sustaining Voltage —

BU108

Abstract: 2SD1816 BDX54 motorola MJ3000 MJD42C equivalent BU326 BU100 2N5631
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD180 Plastic Medium Power Silicon PNP Transistor 3.0 AMPERES POWER TRANSISTOR PNP SILICON 80 VOLTS 30 WATTS . . . designed for use in 5.0 to 10 Watt audio amplifiers and drivers utilizing complementary or quasi complementary circuits.

TRANSISTOR BC 208

Abstract: 2N3055 BU108 Mje350 2SB527 BDX54 BU326 BU100
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE3439 NPN Silicon High-Voltage Power Transistors 0.3 AMPERE POWER TRANSISTOR NPN SILICON 350 VOLTS 15 WATTS . . . designed for use in line–operated equipment requiring high fT. • High DC Current Gain hFE = 40 – 160 @ IC = 20 mAdc

BF-139

Abstract: bf139 transistors BC 549 transistors TO-92 case bc bc 540 BC211 8C547 J BC211 CL16F CTO-92
Contextual Info: S ilic o n N P N transistors, general purpose continued Tam b- 25 °C Transistors N P N silicium , usage généra! (suite) tS v CEO (V) h2 ie (V) ic / 'b max ImA) max ImA) min 40 250 150 1 1000/100 300 § 341 40 250 150 1 1000/100 300 § 341 45 110 240 2

2SC1943

Abstract: bd135 TRANSISTOR REPLACEMENT GUIDE motorola transistor cross reference TRANSISTOR 2sb546 transistor 2SA1046 BU108 TRANSISTOR REPLACEMENT GUIDE c 3198 transistor TIP142 TRANSISTOR REPLACEMENT transistor Electronic ballast mje13007
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE18004D2  Data Sheet Designer's High Speed, High Gain Bipolar NPN Power Transistor with POWER TRANSISTORS 5 AMPERES 1000 VOLTS 75 WATTS Integrated Collector-Emitter Diode and Built-in Efficient Antisaturation Network

TRANSISTOR REPLACEMENT table for transistor

Abstract: POWER TRANSISTOR TO-220 CASE SE9402 replacement for TIP147 transistor 2SA1046 ON Semiconductor 2N5978 TIP41 TRANSISTOR REPLACEMENT BD863 transistor motorola transistor cross reference transistor cross reference TRANSISTOR 2SC2366 TO220
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE13007 MJF13007 Designer's Data Sheet SWITCHMODE NPN Bipolar Power Transistor For Switching Power Supply Applications The MJE/MJF13007 is designed for high–voltage, high–speed power switching inductive circuits where fall time is critical. It is particularly suited for 115 and 220 V

MJ3001 equivalent

Abstract: 2N3055 equivalent transistor NUMBER Motorola transistors MJE3055 TO 127 BD907 equivalent transistor equivalent book 2sc2238 Drive IC 2SC3346 TRANSISTOR REPLACEMENT GUIDE mje340 equivalent mje521 equivalent MJE350 equivalent
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJW16010A*  Data Sheet Designer's NPN Silicon Power Transistors *Motorola Preferred Device 1 kV SWITCHMODE Series These transistors are designed for high–voltage, high–speed, power switching in inductive circuits where fall time is critical. They are particularly suited for

bd139 equivalent transistor

Abstract: transistor 2SA1046 motorola transistor cross reference transistor equivalent book 2SC2073 transistor 40251 TRANSISTOR REPLACEMENT GUIDE pin configuration transistor bd140 transistor bd610 transistor equivalent book 2sc2238 ST T8 3580
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE16106  Data Sheet Designer's NPN Silicon Power Transistor Switchmode Bridge Series . . . specifically designed for use in half bridge and full bridge off line converters. • • • • • • POWER TRANSISTORS

MJ3001 equivalent

Abstract: bd139 equivalent transistor equivalent book 2SC2073 2N3055 equivalent transistor NUMBER MJE371 equivalent bd139 equivalent transistor BU108 BDT65C equivalent 2sd313 equivalent darlington tip31
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJ10005*  Data Sheet Designer's SWITCHMODE Series NPN Silicon Power Darlington Transistor with Base-Emitter Speedup Diode *Motorola Preferred Device 20 AMPERE NPN SILICON POWER DARLINGTON TRANSISTORS 400 VOLTS 175 WATTS

mj150* darlington mj15002

Abstract: BU108 2SA1046 bc 574 All similar transistor 2sa715 silicon npn 2SD716 transistor PNP transistor motorola mj2268 BU326 BU100
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN Darlington Complementary Silicon Power Transistors . . . designed for general–purpose amplifier and low–frequency switching applications. • High DC Current Gain @ IC = 10 Adc — hFE = 2400 Typ — 2N6282, 2N6283, 2N6284

TRANSISTOR GB 558

Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC5013 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES PACKAGE DIMENSIONS • S m a ll P acka ge • H igh G ain B a n d w id th P ro d u c t fr = 10 G H z T Y P . •