3715 TRANSISTOR Search Results

2N3716

Abstract: 3715 transistor 2N3791 MOTOROLA
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN 2N 3715 2N 3716 Silicon NPN Pow er Transistors . . . designed for medium-speed switching and amplifier applications. These devices feature: ♦Motorola P rtfrre d D«vlc» Total Switching Time at 3 A typically 1.15 us

sd22

Abstract: 05Vmax
Contextual Info: Ordering num ber: EN 3 7 1 5 2SB1509/2SD2282 No.3715 PNP/NPN Epitaxial Planar Silicon Transistors 50V/15A Switching Applications Applications • Relay drivers, high-speed inverters, converters. Features • Low collector-to-emitter saturation voltage :VcE sat : —0.5Vmax.

CB2203

Abstract: Leroy Somer MFA56 180v dc motor speed controller MFA80VL CB2103 MFA63S MFA71L MFA80L ac motor inductance
Contextual Info: Issued March 1997 232-3715 Data Pack B Data Sheet dc industrial electrical motors and gearboxes A dc motor and motor/gearbox range of totally enclosed, 2 poles, permanent magnet type, designed for use with thyristor or transistor drive for variable speed application.

2SB1509

Abstract: 2sd228
Contextual Info: Ordering number:EN3715 PNP/NPN Epitaxial Planar Silicon Transistors 2SB1509/2SD2282 High-Current Switching Applications Applications Package Dimensions • Relay drivers, high-speed inverters, converters. unit:mm 2039A Features [2SB1509/2SD2282] · Low collector-to-emitter saturation voltage :

3713

Contextual Info: 7 ^ 5 3 7 0 0 5 ^ 3 SCS-THOMSON •LEOT «! S 6 b ■ 3 V i3 > 2N3713/14/15/16 2N3789/90/91/92 S-TH0MS0N 30E T> EPITAXIAL-BASE NPN/PNP DESC RIPTIO N The 2N3713, 2N3714, 2N3715 and 2N3716 are si­ licon epitaxial-base NPN power transistors in Jedec TO-3 metal case. They are intended for use in po­

Contextual Info: Ordering number:ENN3715 PNP/NPN Epitaxial Planar Silicon Transistors 2SB1509/2SD2282 High-Current Switching Applications Applications Package Dimensions • Relay drivers, high-speed inverters, converters. unit:mm 2039D Features [2SB1509/2SD2282] · Low collector-to-emitter saturation voltage :

2N3715

Abstract: 2n3716 2N3792 2n 3950 2N3792, 3715 2n3791
Contextual Info: r z T SGS-THOMSON Ä 7 # RülDeæi[Liera iDei 2N3715 2N3716 2N3791/2N3792 COMPLEMENTARY SILICON POWER TRANSISTORS . 2N3715AND2N3792 ARE SGS-THOMSON PREFERRED SALESTYPES DESCRIPTION The 2N3715 and 2N3716 are silicon epitaxial-base NPN power transistor in Jedec

bdw 51 52

Abstract: 5A pnp to 220 t 5877 BDW52C
Contextual Info: POWER TRANSISTORS continued P O L A R IT Y (A )o a o A TYPE Epitaxial-base for linear and switching applications > an d < UJ o o c §> > < £ UJ u_ JZ > o in CNJ X 03 e II u ? □ > * Coming soon 30 PIMP NPN PNP NPN PIMP NPN PNP NPN PNP NPN PNP NPN NPN NPN

RC-6123

Abstract: RC 6123 MELF 0207 str 6668 Micro MELF vishay melf 0204 melf RC3715 mini-melf beyschlag
Contextual Info: V is hay Beyschlag w w w. v i s h a y. c o m S e l ector G uide thin film melf resistors resisti v e products V I S HAY I N T E R T E C HN O L O G Y , I N C . Thin Film MELF Resistors Vishay Beyschlag Features • Industry standard sizes: • Excellent stability under pulse load up to 1000 W

RC-6123

Abstract: vishay sr4 RC3715 Zener PH 200 0204 melf MELF 0207 diodes
Contextual Info: V is hay Beysc hlag w w w. v i s h a y. c o m Selector Guide thin film melf resistors r e s i s t i v e p r o d uc t s V I S HAY INTERTE C HNOLO G Y , IN C . Thin Film MELF Resistors Vishay Beyschlag Features • Industry standard sizes: • Excellent stability under pulse load up to 1000 W

NPN transistor SST 117

Abstract: 2N3713 2N3714 J01B 2N3716 2N3715 L72B
Contextual Info: T exas instr -c o p t o } Ta DE IflTblTEb 0D3bS71 □ | ~ 62C 36 57 1 Ô 3 6 1 7 2 6 TEXAS INSTR COPTO 2N3713,2N3714,2N3715,2N3716 N-P-N SILICON POWER TRANSISTORS F E B R U A R Y 1 9 6 8 - R E V IS E D O C T O B E R 1 9 8 4 150 W at 25° C Case Temperature

bf679t

Abstract: transistor bf 679 Transistor BF 679 t BF679 BF 679 bc 569 BH Rf transistor
Contextual Info: c TELEFUNKEN ELECTRONIC fllC D a^SDD^b 00G542E 7 • A L 6 Û S 679 T • BF 679 T TtllLtltFOJMIXilMl electronic Creative Technologies _ t - 3 / - / r Silicon PNP RF Transistor Applications: Gain controlled UHF/VHF input stages

Transistors bd 133

Abstract: BD304 2n3054 81 220 bdy82 2N3713 2N6101 2N6111 2N3055 bd 135
Contextual Info: PNP Power Transistors « Epitaxial Bas« » L F Am plifier and switching Transistors de puissance PNP « Base 6pitaxi6e » A m plification e t com m utation B F Type Compl. I Case j B oitier Ptot h21E W V cE O (V) TO 66 29 -5 5 -4 25 TO 66 25 -6 0 -4 20

BT 815 transistor

Abstract: BT 816 transistor
Contextual Info: 3EE D • ÔSBbBHQ 0017S3? 4 SMBT3906 PNP Silicon Switching Transistor SIEMENS/ SPCL-. SEMICONDS • • • ISIP r-3'7- i r High D C current gain: 0.1 to 100 mA Low collector-emitter saturation voltage Complementary type: S M B T 3904 NPN Type Marking Ordering code

transistor marking bh ra

Abstract: 2SA1641
Contextual Info: S A N Y O S E M I C O N D U C T O R CORP SHE D 7 eJ‘ì707b 000-7140 4 2SA1641 T- 31-IS PNP Epitaxial Planar Silicon Transistor 2044 High-Current Switching Applications I2326A F eatures . Adoption of FBET, MBIT processes. • Low saturation voltage. • F ast switching speed.

bly89a

Abstract: Transistor bly89a
Contextual Info: N AMER PHILIPS/DISCRETE ObE D 86D 0 1910 • b b S a ^ l Q01414fl 3 D T - i t-u BLY89A JV V.H.F. POWER TRANSISTOR N-P-N epitaxial planar transistor intended for use in class-A, B and C operated mobile, industrial and military transmitters with a supply voltage of 13,5 V. The transistor is resistance stabilized. Every

POWER TRANSISTORS 10A 400v pnp

Abstract: NPN Transistor 10A 400V to3 2N1489 2N1468 pnp 400v 10a 1526a 2NXXXX 2N6350 2N1400 2N6352
Contextual Info: 62S4Ò22 S I L I üuin TRANSISTOR CORP u j . l 4 .\. v ii I n n m ü j. _88DQ0787 STOR CORP flfl D .T -A B -ß DE |fl2S40aa 000 Q7Ö7 S T • 2 .3 -1 / f NUMERICAL INDEX TO JAN QUALIFIED POWER TRANSISTORS 2NTYPE* JAN JAN TX JANTXV MIL-S19500 PAGETABLE 2N389

2NXXXX

Abstract: NPN Transistor 10A 400V to3 transistor 2N 3440 TO-59 Package c 3420 transistor 2n3741 MIL transistor 2n 523 POWER TRANSISTORS 10A 400v pnp power transistors table TO111 package
Contextual Info: 62S4Ò22 S I L I üuin TRANSISTOR CORP u j . l 4. \ . v i i I n n m ü j. _88DQ0787 STOR CORP flfl D .T -A B -ß DE |fl2S40aa 000 Q7Ö7 S T • 2 .3 -1 / f NUMERICAL INDEX TO JAN QUALIFIED POWER TRANSISTORS 2NTYPE* JAN JAN TX JANTXV MIL-S19500 PAGETABLE 2N389

312oc

Abstract: mjf*8004 MJF18004 transistor mjf18004 221A-06 221D MJE18004 2C230
Contextual Info: M OTOROLA SEMICONDUCTOR TECHNICAL DATA Designer's Data Sheet SWITCHMODE™ MJE18004* M JF18004* NPN Bipolar Power Transistor For Switching Power Supply Applications ‘Motorola Preferred Dovlc* POWER TRANSISTOR 5.0 AMPERES 1000 VOLTS 35 and 75 WATTS The MJE/MJF18004 have an applications specific state-of-the-art die designed

2N3713

Abstract: 2SC 9012 2N3714 2n3716 9012 transistor 2N371S k130k1
Contextual Info: TYPES 2N3713, 2N3714, 2N3715, 2N3716 N-P-N SINGLE-DIFFUSED MESA SILICON POWER TRANSISTORS FOR POWER-AMPLIFIER AND SWITCHING APPLICATIONS • 150 W at 25°C Case Temperature • 10 A Rated Collector Current • Min f hfe of 30 kHz <* Z2 2 * § m • Min f T of 4 MHz

ic TT 2222

Abstract: transistor tt 2222 BLY89A TT 2222 npn Transistor bly89a TT 2222 npn 2222 transistor yl 3710 dfv 36 mb 3712
Contextual Info: N AMER PHILIPS/DISCRETE GbE D 86D 0 1910 ^5 3 = 1 3 1 D T - G o m m a 3 3 5 -« BLY89A V.H.F. POW ER TRANSISTOR N-P-N epitaxial planar transistor intended for use in class-A, B and C operated mobile, industrial and military transmitters with a supply voltage of 13,5 V. The transistor is resistance stabilized. Every

EP33

Abstract: MC10EP33 MC10EP33D
Contextual Info: MOTOROLA Order Number: MC10EP33/D Rev. 0.1, 05/1999 Semiconductor Components MC10EP33 SO–8, D SUFFIX 8–LEAD PLASTIC SOIC PACKAGE CASE 751 ORDERING INFORMATION MC10EP33D SOIC Product Preview B4 Divider • • • • • • • • • • • • •

EP33

Abstract: MC10EP33 MC10EP33D
Contextual Info: MOTOROLA Order Number: MC10EP33/D Rev. 0.2, 06/1999 Semiconductor Components MC10EP33 SO–8, D SUFFIX 8–LEAD PLASTIC SOIC PACKAGE CASE 751 ORDERING INFORMATION MC10EP33D SOIC Product Preview B4 Divider PIN DESCRIPTION • • • • • • • • •

MC10EP32

Abstract: MC10EP32D
Contextual Info: MOTOROLA Order Number: MC10EP32/D Rev. 0.1, 05/1999 Semiconductor Components MC10EP32 SO–8, D SUFFIX 8–LEAD PLASTIC SOIC PACKAGE CASE 751 ORDERING INFORMATION MC10EP32D SOIC Product Preview B2 Divider • • • • • • • • • • • • •