33DB Search Results

EPA240D

Contextual Info: Excelics EPA240D DATA SHEET High Efficiency Heterojunction Power FET • • • • • • 410 +33dBm TYPICAL OUTPUT POWER 20.0 dB TYPICAL POWER GAIN AT 2GHz 0.4 X 2400 MICRON RECESSED “MUSHROOM” GATE Si3N4 PASSIVATION ADVANCED EPITAXIAL HETEROJUNCTION

2SC2216

Abstract: 2SC2717
Contextual Info: T O S H IB A 2SC2216,2SC2717 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2216, 2SC2717 U nit in mm TV FINAL PICTURE IF AMPLIFIER APPLICATIONS. . High Gain : Gpe = 33dB Typ. (f=45M Hz) • Good Linearity of hpE- SYMBOL CHARACTERISTIC Collector-Base Voltage

F0022

Contextual Info: InNET TECHNOLOGIES technologies! w F0022 w Electrical ELECTRICAL SPECIFICATIONS • 25°C : REV. 03 TRANSMIT RECEIVE 1.0dB MAX. 1.0dB MAX. 20MHz 7dB MIN. 5dB MIN. 25MHz 18dB MIN. 1 1dB MIN. 30MHz 40MHz 27dB MIN. 33dB MIN. 16dB MIN. 26dB MIN. INSERTION LOSS: (1 TO 10MHz)

Contextual Info: InNET TECHNOLOGIES te c lln o ^ ^ e j j 3 t F0012 Electrical (REV. 01 E L E C T R IC A L S P E C IF IC A T IO N S INSERTION LOSS: (1 TO 10MHz) TRANSMIT RECEIVE 1.0dB MAX. 1-OdB MAX. 7dB MIN. 18dB MIN. 27dB MIN. 33dB MIN. 5dB MIN. 11 dB MIN. 16dB MIN. 26dB MIN.

Contextual Info: KSC388 KSC388 TV Final Picture IF Amplifier Applications • GPE= 33dB TYP. at f=45MHz • Suffix “-C” means Center Collector (1. Emitter 2. Collector 3. Base) TO-92 1 1. Emitter 2. Base 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted

OK304

Abstract: 2sc2216
Contextual Info: 2SC2216,2SC2717 T O S H IB A TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2216, 2SC2717 Unit in mm TV FINAL PICTURE IF AMPLIFIER APPLICATIONS. 5.XMAX. High Gain : Gpe = 33dB Typ. (f=45MHz) Good Linearity of hEE. F a X ol ^ 0.45 o MAXIMUM RATINGS (Ta = 25°C)

Contextual Info: LANDatacom Features Discrete Single Port Gigabit Low Profile Typical Common Electrical Characteristics Dielectic Rating 1500VAC Insertion Loss -1.0dB max. -18dB min. -15dB min. Return Loss -12dB min. -10dB min. Cross Talk -35dB min. -42dB min. CCMR -33dB min.

2SC382

Abstract: W2W89 882s 12W55 transistor 2sc382
Contextual Info: 2 s c 382 SILICON NPN PLANAR TRANSISTOR L 2j O t h ; pif i, o TV let, 2nd. Picture IP Amplifier Applications : • Gpe = 33dB Typ. (f = 45MHz) • I1^(bIAO Ci|fft • Excellent forward AGC Characteristic MAXIMUM RATINGS CHARACTERISTIC 3 u $ * • X í y ^

80MHZ-100MHZ

Abstract: 000-7382-35
Contextual Info: more than you expect Discrete Dual Port Gigabit PoE PDFP-G48 LANDatacom 1 Typical Common Electrical Characteristics Inductance 350uH Min. Dielectic Rating 1500VAC Insertion Loss -1.0dB max. -18dB min. -14dB min. Return Loss -12dB min. -10dB min. Cross Talk -33dB min.

DSSS transceiver

Abstract: dsss modulator wlan transceiver IC for oscillator 2.4GHZ MAX2620 2.45Ghz oscillator circuit DSSS 2.4ghz amplifier 2.4GHz Linear Power Amplifier MAX2644 data sheet
Contextual Info: WIRELESS, RF, AND CABLE Application Note 586: May 01, 2001 Block Diagram for 2.4GHz IEEE802.11b DSSS WLAN Transceiver Application Short application article show a detailed block diagram for the 802.11b DSSS transceiver. The MAX2242 PA provides 33dBc ACPR at 2.45GHz with +22.5dBm

Contextual Info: KSC388 KSC388 TV Final Picture IF Amplifier Applications • GPE= 33dB TYP at f=45MHz • Suffix “-C” means Center Collector (1. Emitter 2. Collector 3. Base) TO-92 1 1. Emitter 2. Base 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted

Contextual Info: RFPA5026 4.9GHz to 5.9GHz 2W InGaP AMPLIFIER RFPA5026 Proposed 4.9GHz TO 5.9GHz 2W InGaP AMPLIFIER Package: QFN, 6-pin, 5.59mm x 6.23mm x 0.85mm Vcc Features RFPA5026  P1dB =33dBm at 5V  802.11g 54Mb/s Class AB Performance  POUT =25dBm at 2.5% EVM,

TOSHIBA MICROWAVE AMPLIFIER

Abstract: TMD1013-1-431 TOSHIBA TMD1013-1-431
Contextual Info: MICROWAVE POWER MMIC AMPLIFIER TMD1013-1-431 TMD1013-1-431 MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES „ High Power P1dB=33dBm TYP. „ High Power Added Efficiency ηadd=14%(TYP.) „ High Gain G1dB=25dB(TYP.) „ Operable Frequency : f=10.0-12.0GHz. ABSOLUTE MAXIMUM RATINGS(Ta=25°

Contextual Info: MASW-004100-1193 HMIC SP4T Silicon PIN Diode Switch V4 Features ♦ ♦ ♦ ♦ ♦ ♦ Ultra Broad Bandwidth: 50MHz to 26GHz 0.9 Insertion Loss , 34dB Isolation at 20GHz 50nS Switching Speed Reliable, Fully Monolithic, Glass Encapsulated Construction +33dBm Power Handling

RFMA7185

Contextual Info: RFMA7185 -2W 7.10 – 8.50 GHz Power Amplifier MMIC UPDATED 01/14/05 FEATURES • • • • 7.10– 8.50GHz Operating Frequency Range 33dBm Output Power at 1dB Compression 30.0 dB Typical Power Gain @1dB gain compression -45dBc Typical OIM3 @ each tone Pout 22dBm

EMP103B

Contextual Info: EMP103B DATA SHEET 6.4 – 8.0 GHz Power Amplifier MMIC ISSUED DATE: 02-24-04 FEATURES • • • 6.4 – 8.0 GHz Bandwidth 33dBm Output Power at 1dB Compression 14 dB Typical Power Gain APPLICATIONS • Point-to-point and point-to-multipoint radio ELECTRICAL CHARACTERISTICS Ta = 25 °C

RF5110

Contextual Info: RF5111 DRAFT DRAFT 3V DCS POWER AMPLIFIER „ „ „ „ „ „ „ VCC2 2f0 13 VAT EN 1 12 RF OUT 27dB Gain with Analog Gain Control RF IN 2 11 RF OUT 50% Efficiency GND1 3 10 RF OUT 1700MHz to 1950MHz Operation VCC1 4 9 NC +33dBm Output Power at 3.5V Supports DCS1800 and

VD F1 SMD

Contextual Info: MITSUBISHI SEMICONDUCTOR<GaAs FET> MGF0921A L & S BAND GaAs FET [ SMD non – matched ] DESCRIPTION The MGF0921A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers. FEATURES • High output power Po=33dBm TYP. @f=1.9GHz,Pin=17dBm

Contextual Info: Power Transistor RT233 Product Features Application • Frequency Range = 50MHz ~ 6GHz • High Output Power P1dB = 33dBm Typ. @2.5GHz P3dB = 36dBm(Typ.)@2.5GHz • High Efficiency • High In/Out Impedance • High Power Gain G1dB = 20dB(Typ.)@900MHz G1dB = 15dB(Typ.)@2.5GHz

SMD GP 113

Abstract: MGF0921A
Contextual Info: MITSUBISHI SEMICONDUCTOR<GaAs FET> MGF0921A L & S BAND GaAs FET [ SMD non – matched ] DESCRIPTION The MGF0921A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers. FEATURES • High output power Po=33dBm TYP. @f=1.9GHz,Pin=17dBm

ZMSC-4-2

Contextual Info: Coaxial Power Splitter/Combiner 4 Way-0° 50Ω 0.002 to 20 MHz Maximum Ratings Features Operating Temperature -55°C to 100°C Storage Temperature -55°C to 100°C Power Input as a splitter ZMSC-4-2 • high isolation, 33dB typ. • rugged, shielded case

ED-1402

Contextual Info: +12 to +33dBm Limiter 50Ω Broadband VLM-63-2W+ 30 to 6000 MHz The Big Deal • Protection against up to 2.5 W of unwanted input signals • Wide frequency range, 30 MHz-6 GHz • Very fast recovery time, 5 nsec typ. CASE STYLE: FF704 Product Overview The VLM-63-2W+ reacts almost instantaneously to protect sensitive devices from power surges and other unwanted signals

transistor F45

Contextual Info: FORWARD INTERNATIONAL ELECTRONICS LTD. 2SC2216 SEMICONDUCTOR TECHNICAL DATA NPN EPITAXIAL SILICON TRANSISTOR TV FINAL PICTURE IF AMPLIFIER APPLICATIONS Package: TO-92 * High Gain:Gpe=33dB TYP. (f=45 MHz) * Good Linearity of HFE ABSOLUTE MAXIMUM RATINGS at Tamb=250C

27dBm 5GHz

Contextual Info: Crystek POCKET Passive Doubler Part Number: CPPD-0.85-2 Input Freq. Range 0.85-2.0 GHz y ies c w n e e N qu r Ser e lie r F tip l u M Features: Input Drive Level: +10dBm to +20dBm Conversion Loss: 15dB typical Isolation Fo, 3Fo, 4Fo : 33dB typical Small In-Line SMA Package