3299 TRANSISTOR Search Results

2N3551

Abstract: SOLITRON Solitron Transistor
Contextual Info: 836_86S2_SQLITR0N D E V I C E S ^ O litr o n S P E C IN q ” ^ DE ^03bflbD5 00012flfl 0 /93^3299 E b P C iù £ : J W S V A 3 8 V 4 NO.: c 2 N 3 3 # 9 TY PE: rfP A f g JltoO floW &Z C A SE: TO - 4 3 D e v ic e s , In c. I F I C A T I O N S F S - a c d Z P & } ') ’> '?

IC 4047

Abstract: N2219 ic 4046 bsw830 BSW82 N 2222 N2222A BSW83 2N3301 2N3302
Contextual Info: NPN Silicon Transistors NPN Silicon Epitaxial Planar Transistors lc = 5C 0mA) in TO-18 and TO-39 (~ T O - 5 ) metal cases for high speed switching Type Characteristics @ Tam b= 25°C Maximum Ratings f" l„ Tam b— ff 2 5 °C Tease— V CE = 10 V = 10 mA

2N4034

Abstract: 2N3504
Contextual Info: JEDEC TRANSISTORS continued a. >1- S' > o LÜ O > a t/t e X «O e < _u LU > X SO C E < e o X (O £ +r-e • lA Ui ÜJ I< oc O Ü. o > ÍT a. X ta £ o o n o o o ir> C-vl IIra h- @ PACKAGE P O L A R IT Y LU fT min (MHz) High speed saturated switches f B ü

4033

Abstract: 2N4033 2n4027
Contextual Info: continued >cc < —1 o a. <3 w JJ a LU 1— < a: X to -Ü E > < E _o UJ lL _c X CU E A3 UJ o > U_ a. <Xo E o o n (continued) o ID CM II I - PACKAGE TYPE General purpose amplifiers and switches fT min (MHz) JEDEC TRANSISTORS @ 5 E ü a. 2N 3251 PNP 40 100/300

Contextual Info: NPN SILICON PLANAR MEDIUM POWER HIGH CURRENT TRANSISTOR ISSUE 3 •NOVEMBER 1995_ FEATURES * 100 V olt VCE0 * 4 Am ps continuous current * * Up to 10 Am ps peak current Very low saturation voltage * Ptot=1.2 W atts ABSOLUTE MAXIMUM RATINGS.

ZTX853

Contextual Info: NPN SILICON PLANAR MEDIUM POWER HIGH CURRENT TRANSISTOR ISSUE 2 -A U G U S T 94_ FEATURES * 100 V o lt VCE0 * 4 A m ps continuous current * Up to 10 Am ps peak current * Very lo w saturation voltage Ptot=1,2 W atts ABSOLUTE MAXIMUM RATINGS.

ZTX853

Abstract: C 3298 TRANSISTOR
Contextual Info: NPN SILICON PLANAR MEDIUM POWER HIGH CURRENT TRANSISTOR ISSUE 3- NOVEMBER H 1995 FEATURES 100volt VCE , * * 4 Amps * Up to 10 Amps + * Very continuous low Pt[ t=l.2 current peak current saturation voltage Watts E-Line 1092 Compatible ABSOLUTE MAXIMUM RATINGS.

2n4036

Abstract: star delta connection circuit diagrams 2N3134 2N3135 2N3136 2N3250 2N3250A 2N3251A 2N3299 2N3300
Contextual Info: Transistors Cont. Discrete Devices Medium Current, High-Speed Amplifiers (Cont.) Maxim um Ratings Type Polarity PD Ambient mW Electrical Characteristics @ 25° C V c b VCE V e b Volts Volts Volts V C E (Sat) lc /l„ H f e @ >C Min/Max mA Volts m A/m A

2N918

Abstract: 2N4033
Contextual Info: continued >cc <—1 oa. w0 JJ aLU 1— <a: <3 X to -Ü E < E _o UJ _clL > CU E A3 UoJ > X U_a. X <o E no o0 (continued) o0 ID CM II @ 5 I - PACKAG E TYPE General purpose amplifiers and switches f T min (MHz) JEDEC TRANSISTORS E a.ü 2N 3251 PNP 40 100/300

transistor 3504 npn

Abstract: 026 pnp
Contextual Info: JEDEC TRANSISTORS continued a. >1- S' > o LÜ O > a t/t e X «O e < _u LU > X SO C E X < e o (O £ +r-e • lA Ui ÜJ I< oc O Ü. o > ÍT a. X ta £ o o n o o o ir> C-vl II ra h- @ PACKAGE P O L A R IT Y LU fT min (MHz) High speed saturated switches f B

Contextual Info: NPN SILICON PLANAR MEDIUM POWER HIGH CURRENT TRANSISTOR ISSUE 3 - NOVEM BER 1995 FEATURES * 100 V o lt VCE0 * 4 A m p s c o n tin u o u s c u rre n t * U p to 10 A m p s peak c u rre n t * V ery lo w s a tu ra tio n v o lta g e * Ptot=1.2 W a tts ABSOLUTE M AXIM UM RATINGS.

Contextual Info: NPN SILICON PLANAR MEDIUM POWER HIGH CURRENT TRANSISTOR ZTX853 ISSUE 3 - NOVEMBER 1995 FEATURES * 100 Volt VCEO * 4 Amps continuous current * Up to 10 Amps peak current * Very low saturation voltage * Ptot=1.2 Watts C B E E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS.

transistor d 188

Abstract: BD188 bd186 BD186 motorola BD190 3299 transistor
Contextual Info: M O T O R O L A SC Î X S T R S / R F> 6367254 MOTOROLA Th SC DT|b3b7ES4 96D <X ST R S/R _.F J 80565 GOflOSbS 4 D MOTOROLA E l SEMICONDUCTOR TECHNICAL DATA PLASTIC M E D IU M POWER SILICO N PNP TRANSISTOR 4 AM PERE POWER TRANSISTOR . . . designed for use in 5 to 10 Watt audio amplifiers utilizing

2N3930

Abstract: 2N4033
Contextual Info: continued >cc <—1 oa . w JJ aLU 1— <a: <3 X to -Ü E < E _o UJ _clL > X CU E A3 UJ o > U_ a. X <o E o n o0 (continued) o0 ID CM II I@ 5 PACKAGE TYPE General purpose amplifiers and switches fT min (MHz) JEDEC TRANSISTORS E a.ü 2N 3251 PNP 40 100/300

2219a

Abstract: 2218A 2n h 2222a cc 3053 2N4047 npn 2907A transistor 2N 2297 transistor 3504 npn 2222 NPN
Contextual Info: JEDEC TRANSISTORS continued > o LÜ O > a LU I< oc t/t e X «O e < _u o X SO C E ÜJ Ü. S' < e o > X (O £ +r-e • lA Ui O > ÍT a. X ta £ o o n o o o ir> C-vl II ra h- @ PACKAGE P O L A R IT Y LU a. >1- fT min (MHz) High speed saturated switches f B

ZTX853

Abstract: DSA003778
Contextual Info: NPN SILICON PLANAR MEDIUM POWER HIGH CURRENT TRANSISTOR ZTX853 ELECTRICAL CHARACTERISTICS at Tamb = 25°C MIN. TYP. MAX. UNIT CONDITIONS. 830 950 V IC=4A, VCE=2V* PARAMETER SYMBOL Base-Emitter Turn-On Voltage VBE(on) Static Forward Current Transfer Ratio

MPS-H20

Abstract: npn, transistor, sc 107 b MV400 3 w RF POWER TRANSISTOR NPN
Contextual Info: MPSH20 / MMBTH20 MPSH20 MMBTH20 C C B E TO-92 B SOT-23 E Mark: 3L NPN RF Transistor This device is designed for general RF amplifier and mixer applications to 250 MHz with collector currents in the 1.0 mA to 30 mA range. Sourced from Process 49. Absolute Maximum Ratings*

V9390

Contextual Info: MOTOROLA SC 12E 0 I X ST RS /R F b3b?2SM OGflbSlO CV10440 | , CECC 50004-087 CASE 22-03, STYLE 1 TO-18 (TO-206AA) MAXIM UM RATINGS Sym bol Rating . Value Unit Collector-Emitter Voltage VCEO 45 Vdc Collector-Base Voltage VCBO 45 Vdc Emitter-Base Voltage v ebo

2N3134

Abstract: 2N3135 2N3136 2N3250 2N3250A 2N3251A 2N3299 2N3300 2N3302 BT2907A
Contextual Info: Transistors Cont. Discrete Devices Medium Current, High-Speed Amplifiers (Cont.) Maxim um Ratings Type Polarity PD Ambient mW Electrical Characteristics @ 25° C V c b VCE V e b Volts Volts Volts V C E (Sat) lc /l„ H f e @ >C Min/Max mA Volts m A/m A

8N35

Abstract: 72SM AN569 MTH8N35 MTH8N40 MTM8N35 MTM8N40 TMOS 8IM40 MTH8
Contextual Info: MOTOROLA SC IM E D I XST R S/R F t.3b?aS4 OOfiTötiM 4 | MOTOROLA m SEMICONDUCTOR TECHNICAL DATA MTH8INI35 MTH8N40 MTM8N35 MTM8N40 Designer's Data Sheet Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate TM OS Th ese TM O S Pow er FE T s are designed for high voltage, high

LH0005H

Abstract: operational amplifier discrete schematic FT2010 LH0005 LH0005A LH0006
Contextual Info: National Semiconductor Operational Amplifiers/Buffers LH0005/LH0005A Operational Amplifier General Description The LH 0005/LH 0005A is a hybrid integrated cir­ cuit operational am pfifier employing thick film resistors and discrete silicon semiconductors in its

558z

Abstract: se130 221A-06 221D BUL44 BUL44F
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet B U L 44* BUL44F* SWITCHMODE™ NPN Bipolar Power Transistor For Switching Power Supply Applications ‘Motorola Preferred Device POWER TRANSISTOR 2.0 AM PERES 700 VOLTS 40 and 100 WATTS The BUL44/BUL44F have an applications specific state-of-the-art die designed

IRF 3302

Abstract: 2sc 1894 IRFF430 IRFF431 IRFF432 IRFF433 irf 430
Contextual Info: -Standard Power MOSFETs File Number IRFF430, IRFF431, IRFF432, IRFF433 1894 N-Channel Enhancement-Mode Power Field-Effect Transistors 2.25A and 2.75A, 450V - 500V rDsioni = 1.50 and 2.00 N-CHANNEL ENHANCEMENT MODE 3 D Features: • SOA is power-dissipation limited

MTPBP10

Abstract: UL-44 l44 transistor transistor L44
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet B U L44 * BU L44F* SWITCHMODE™ NPN Bipolar Power Transistor For Switching Power Supply Applications •Motorola Pf*f*cr#d Dtvtc* POWER TRANSISTOR 2.0 AMPERES 700 VOLTS 40 and 100 WATTS The BUL44/BUL44F have an applications specific state-of-the-art die designed