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8N35 Abstract: 72SM AN569 MTH8N35 MTH8N40 MTM8N35 MTM8N40 TMOS 8IM40 MTH8 Contextual Info: MOTOROLA SC IM E D I XST R S/R F t.3b?aS4 OOfiTötiM 4 \| MOTOROLA m SEMICONDUCTOR TECHNICAL DATA MTH8INI35 MTH8N40 MTM8N35 MTM8N40 Designer's Data Sheet Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate TM OS Th ese TM O S Pow er FE T s are designed for high voltage, high	OCR Scan	b3b72s4 mth8n35 mth8n40 mtm8n35 +10mtm8n40 o-29ua o-218ac yi4sh1962 8n35 72sm an569 tmos 8im40 mth8	PDF

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8N35

Abstract: 72SM AN569 MTH8N35 MTH8N40 MTM8N35 MTM8N40 TMOS 8IM40 MTH8
Contextual Info: MOTOROLA SC IM E D I XST R S/R F t.3b?aS4 OOfiTötiM 4 | MOTOROLA m SEMICONDUCTOR TECHNICAL DATA MTH8INI35 MTH8N40 MTM8N35 MTM8N40 Designer's Data Sheet Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate TM OS Th ese TM O S Pow er FE T s are designed for high voltage, high

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b3b72s4 mth8n35 mth8n40 mtm8n35 +10

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