TMOS Search Results

Contextual Info: MOTOROLA Order this document by MMDF3P03HD/D SEMICONDUCTOR TECHNICAL DATA Advance Information M M D F 3P 03H D Medium Power Surface Mount Products M o to ro la P r e fe r re d D ev ic e TMOS Dual P-Channel Field Effect Transistors DUAL TMOS POWER MOSFET 30 VOLTS

2955g

Abstract: NVF2955T1G nvf2955 A1 SOT-223 MOSFET NVF2955PT1G NTF2955T1G
Contextual Info: NTF2955, NVF2955, NVF2955P Power MOSFET −60 V, −2.6 A, Single P−Channel SOT−223 Features • • • • TMOS7 Design for low RDS on Withstands High Energy in Avalanche and Commutation Modes AEC Q101 Qualified − NVF2955, NVF2955P These Devices are Pb−Free and are RoHS Compliant

MTP33N10E

Abstract: AN569 mosfet transistor 400 volts.100 amperes
Contextual Info: MOTOROLA Order this document by MTP33N10E/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet TMOS E-FET. Power Field Effect Transistor Designer's MTP33N10E Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET 33 AMPERES 100 VOLTS

AN569

Abstract: MTD1N80E SMD310
Contextual Info: MOTOROLA Order this document by MTD1N80E/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet TMOS E-FET. Power Field Effect Transistor DPAK for Surface Mount Designer's MTD1N80E Motorola Preferred Device TMOS POWER FET 1.0 AMPERES 800 VOLTS RDS on = 12 OHM N–Channel Enhancement–Mode Silicon Gate

AN569

Abstract: MTP12N06EZL mosfet transistor 400 volts.100 amperes
Contextual Info: MOTOROLA Order this document by MTP12N06EZL/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet TMOS E-FET. High Energy Power FET Designer's MTP12N06EZL N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET 12 AMPERES 60 VOLTS RDS on = 0.180 OHM This advanced TMOS power FET is designed to withstand high

AN569

Abstract: MTB9N25E SMD310
Contextual Info: MOTOROLA Order this document by MTB9N25E/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet TMOS E-FET. High Energy Power FET D2PAK for Surface Mount Designer's MTB9N25E Motorola Preferred Device TMOS POWER FET 9.0 AMPERES 250 VOLTS RDS on = 0.45 OHM N–Channel Enhancement–Mode Silicon Gate

AN569

Abstract: MTB2N60E SMD310
Contextual Info: MOTOROLA Order this document by MTB2N60E/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet TMOS E-FET. High Energy Power FET D2PAK for Surface Mount Designer's MTB2N60E Motorola Preferred Device TMOS POWER FET 2.0 AMPERES 600 VOLTS RDS on = 3.8 OHM N–Channel Enhancement–Mode Silicon Gate

AN569

Abstract: MTD10N10EL SMD310
Contextual Info: MOTOROLA Order this document by MTD10N10EL/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet TMOS E-FET. Power Field Effect Transistor DPAK for Surface Mount Designer's MTD10N10EL Motorola Preferred Device TMOS POWER FET 10 AMPERES 100 VOLTS RDS on = 0.22 OHM

AN569

Abstract: MTB3N100E SMD310 LS 1316
Contextual Info: MOTOROLA Order this document by MTB3N100E/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet TMOS E-FET. High Energy Power FET D2PAK for Surface Mount Designer's MTB3N100E Motorola Preferred Device TMOS POWER FET 3.0 AMPERES 1000 VOLTS RDS on = 4.0 OHM N–Channel Enhancement–Mode Silicon Gate

MGSF3441VT1

Abstract: MGSF3441VT3
Contextual Info: MOTOROLA Order this document by MGSF3441VT1/D SEMICONDUCTOR TECHNICAL DATA  MGSF3441VT1 Preliminary Information Motorola Preferred Device Low rDS on Small-Signal MOSFETs TMOS Single P-Channel Field Effect Transistors Part of the GreenLine Portfolio of devices with energy–

MTD5N10

Abstract: MTD6N10E AN569 SMD310 SOT 23 MOSFET
Contextual Info: MOTOROLA Order this document by MTD6N10E/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet TMOS E-FET. Power Field Effect Transistor DPAK for Surface Mount Designer's MTD6N10E Motorola Preferred Device TMOS POWER FET 6.0 AMPERES 100 VOLTS RDS on = 0.400 OHM

paste

Abstract: AN569 MTD3N25E SMD310
Contextual Info: MOTOROLA Order this document by MTD3N25E/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet TMOS E-FET. Power Field Effect Transistor DPAK for Surface Mount Designer's MTD3N25E Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET

AN569

Abstract: MTD2955 MTD2955E SMD310 MTD2955 sot-223 MTD2955E-D
Contextual Info: MOTOROLA Order this document by MTD2955E/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet TMOS E-FET. Power Field Effect Transistor DPAK for Surface Mount Designer's MTD2955E Motorola Preferred Device P–Channel Enhancement–Mode Silicon Gate TMOS POWER FET

AN569

Abstract: MTB16N25E SMD310
Contextual Info: MOTOROLA Order this document by MTB16N25E/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet TMOS E-FET. High Energy Power FET D2PAK for Surface Mount Designer's MTB16N25E Motorola Preferred Device TMOS POWER FET 16 AMPERES 250 VOLTS RDS on = 0.25 OHM N–Channel Enhancement–Mode Silicon Gate

AN569

Abstract: D3N02 MMDF3N02HD MMDF3N02HDR2 SMD310
Contextual Info: MOTOROLA Order this document by MMDF3N02HD/D SEMICONDUCTOR TECHNICAL DATA Designer's  Data Sheet MMDF3N02HD Medium Power Surface Mount Products TMOS Dual N-Channel Field Effect Transistors Motorola Preferred Device DUAL TMOS POWER MOSFET 3.0 AMPERES 20 VOLTS

MOTOROLA TRANSISTOR 279

Abstract: motorola 039 motorola mosfet TMOS E-FET zener motorola MTB50N06EL Motorola 406 Motorola TR 229 418B-02
Contextual Info: MOTOROLA Order this document by MTB50N06EL/D SEMICONDUCTOR TECHNICAL DATA Advance Information MTB50N06EL TMOS E-FET. Power Field Effect Transistors D2PAK for Surface Mount Logic Level TMOS TMOSāāā N–Channel Enhancement–Mode Silicon Gate Motorola Preferred Device

TMOS 80A

Abstract: NTL4502N NTL4502NT1
Contextual Info: NTL4502N Product Preview Quad N−Channel Module Features. • • • • • • • • • Four N-Channel TMOS in a Single Package High Input Impedance for Ease of Drive Ultra Low On-resistance RDS(on Provides Low Conduction Losses Very Fast Switching Times Provides Low Switching Losses

MTW23N25E

Abstract: AN569
Contextual Info: MOTOROLA Order this document by MTW23N25E/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet TMOS E-FET. Power Field Effect Transistor TO-247 with Isolated Mounting Hole Designer's N–Channel Enhancement–Mode Silicon Gate This advanced TMOS E–FET is designed to withstand high

MTP55N06Z

Abstract: TMOS E-FET
Contextual Info: MOTOROLA Order this document by MTP55N06Z/D SEMICONDUCTOR TECHNICAL DATA Advance Information MTP55N06Z TMOS E-FET. Power Field Effect Transistor N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET 55 AMPERES 60 VOLTS RDS on = 18 mΩ This advanced high voltage TMOS E–FET is designed to

mj 1504 transistor

Abstract: AN569 MTV32N20E SMD310 mj 1504 scheme
Contextual Info: MOTOROLA Order this document by MTV32N20E/D SEMICONDUCTOR TECHNICAL DATA Advance Information MTV32N20E TMOS E-FET. Power Field Effect Transistor D3PAK for Surface Mount TMOS POWER FET 32 AMPERES 200 VOLTS RDS on = 0.075 OHM N–Channel Enhancement–Mode Silicon Gate

AN569

Abstract: MTY14N100E 340G
Contextual Info: MOTOROLA Order this document by MTY14N100E/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet TMOS E-FET. Power Field Effect Transistor Designer's MTY14N100E Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET 14 AMPERES 1000 VOLTS

AN569

Abstract: MTP8N06E
Contextual Info: MOTOROLA Order this document by MTP8N06E/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet TMOS E-FET. Power Field Effect Transistor Designer's MTP8N06E Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET 8.0 AMPERES 60 VOLTS

mosfet cross reference

Abstract: Power MOSFET Cross Reference Guide 2SK2146 Cross Reference power MOSFET SUP60NO6-18 MOSFET TOSHIBA 2SK irf510 Motorola SUP70NO6 STP16NEO6 IRF540 substitution
Contextual Info: TMOS Power MOSFET Cross Reference This Cross reference lists MOSFETs by either industry standard part number or by manufacturer's part number for which there is a Motorola nearest or similar replacement. For devices not listed, or for additional information, contact the nearest Motorola Franchised Distributor or your local

MGSF1N03LT1

Abstract: MGSF1N03LT3
Contextual Info: MOTOROLA Order this document by MGSF1N03LT1/D SEMICONDUCTOR TECHNICAL DATA  MGSF1N03LT1 Motorola Preferred Device Low rDS on Small-Signal MOSFETs TMOS Single N-Channel Field Effect Transistors Part of the GreenLine Portfolio of devices with energy–