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    onsemi MJF2955G

    PNP Bipolar Power Transistor. - Rail/Tube (Alt: MJF2955G)
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    Avnet Americas MJF2955G Tube 1,500 50
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    Mouser Electronics MJF2955G 308
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    Newark MJF2955G Bulk 300
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    Rochester Electronics MJF2955G 4,059 1
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    TME MJF2955G 1
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    ComSIT USA MJF2955G 5,056
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    Avnet Silica MJF2955G 15 Weeks 50
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    EBV Elektronik MJF2955G 16 Weeks 50
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    Master Electronics MJF2955G
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    Vyrian MJF2955G 11,731
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    onsemi MJ2955G

    15 A, 60 V PNP Bipolar Power Transistor. - Trays (Alt: MJ2955G)
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    Avnet Americas () MJ2955G Tray 500 8 Weeks 100
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    MJ2955G Bulk 1
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    Mouser Electronics MJ2955G 1,027
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    Newark MJ2955G Bulk 113 1
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    TME MJ2955G 26 1
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    Avnet Silica MJ2955G 12 Weeks 100
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    EBV Elektronik MJ2955G 13 Weeks 100
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    Vyrian MJ2955G 11,076
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    onsemi MJD2955G

    10 A, 60 V PNP Bipolar Power Transistor. - Rail/Tube (Alt: MJD2955G)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas () MJD2955G Tube 8,400
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    MJD2955G Tube 12 Weeks 2,025
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    Mouser Electronics MJD2955G
    • 1 $1.37
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    Newark MJD2955G Bulk 675
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    RS MJD2955G Bulk 1
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    Bristol Electronics () MJD2955G 135 1
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    MJD2955G 81
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    Rochester Electronics MJD2955G 750 1
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    TME MJD2955G 21 1
    • 1 $1.25
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    Avnet Silica MJD2955G 17 Weeks 75
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    EBV Elektronik MJD2955G 18 Weeks 75
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    Flip Electronics MJD2955G 1,590
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    Bivar Inc ELM12955GDL

    LED Circuit Board Indicators Vert LED Assembly 5mm Green 565 nm
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics ELM12955GDL
    • 1 $0.86
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    Newark ELM12955GDL Bulk 100
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    onsemi MJ2955G.

    Trans Bjt Single, Pnp, 60V, 15A; |Onsemi MJ2955G.
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    Newark MJ2955G. Bulk 100
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    2955G Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    2955g

    Abstract: NVF2955T1G nvf2955 A1 SOT-223 MOSFET NVF2955PT1G NTF2955T1G
    Contextual Info: NTF2955, NVF2955, NVF2955P Power MOSFET −60 V, −2.6 A, Single P−Channel SOT−223 Features • • • • TMOS7 Design for low RDS on Withstands High Energy in Avalanche and Commutation Modes AEC Q101 Qualified − NVF2955, NVF2955P These Devices are Pb−Free and are RoHS Compliant


    Original
    ntf2955nvf2955nvf2955pot-223+6ntf2955/d2955gnvf2955t1ga1 sot-223 mosfetnvf2955pt1gntf2955t1g PDF

    Contextual Info: NTF2955, NVF2955, NVF2955P Power MOSFET −60 V, −2.6 A, Single P−Channel SOT−223 Features • • • • Design for low RDS on Withstands High Energy in Avalanche and Commutation Modes AEC−Q101 Qualified − NVF2955, NVF2955P These Devices are Pb−Free and are RoHS Compliant


    Original
    ntf2955nvf2955nvf2955pot-223+2aec-q101ntf2955/d PDF

    NTF2955T1G

    Contextual Info: NTF2955, NVF2955 Power MOSFET −60 V, −2.6 A, Single P−Channel SOT−223 Features • • • • Design for low RDS on Withstands High Energy in Avalanche and Commutation Modes AEC−Q101 Qualified − NVF2955 These Devices are Pb−Free and are RoHS Compliant


    Original
    ntf2955nvf2955ntf2955/dntf2955t1g PDF

    nt 2955g

    Abstract: 2955g
    Contextual Info: NTD2955, NVD2955 Power MOSFET −60 V, −12 A, P−Channel DPAK This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low−voltage, high− speed switching applications in power supplies, converters, and power


    Original
    ntd2955nvd2955ntd2955/dnt 2955g+12955g PDF

    2955G

    Abstract: NTF2955P NTF2955T1G NTF2955 NTF2955T1 MS10
    Contextual Info: NTF2955, NTF2955P Power MOSFET −60 V, −2.6 A, Single P−Channel SOT−223 Features • TMOS7 Design for low RDS on • Withstands High Energy in Avalanche and Commutation Modes • Pb−Free Packages are Available Applications • • • • Power Supplies


    Original
    ntf2955ntf2955pot-223ntf2955/d+42955gntf2955t1gntf2955t1ms10 PDF

    nt2955g

    Abstract: NTP2955G nt 2955g 2955G STD2955T4G DPak Package size NTD2955 application note 369D-01
    Contextual Info: NTD2955, NTD2955P, STD2955 Power MOSFET −60 V, −12 A, P−Channel DPAK This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low−voltage, high− speed switching applications in power supplies, converters, and power


    Original
    ntd2955ntd2955pstd2955ntd2955/d+8nt2955gntp2955gnt 2955g2955gstd2955t4gdpak package sizentd2955 application note369d-01 PDF

    nt2955g

    Abstract: nt 2955g
    Contextual Info: NTD2955, NTD2955P, NVD2955 Power MOSFET −60 V, −12 A, P−Channel DPAK This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low−voltage, high− speed switching applications in power supplies, converters, and power


    Original
    ntd2955ntd2955pnvd2955ntd2955/d+2nt2955gnt 2955g PDF

    Contextual Info: , f il e COPY 2 955-<2096 NOTES: 1. M A TIN G : Interface dimensions per Mil-C-39012/SMA series and Solitron/Microwave M D - 1 0 7 . 2. MATERIAL: Coupling Nut and Body: - - - - - - Stainless Steel per ASTM-A582, Type 303, Cond. A. Contact and Lock R i n g :— Beryllium Copper per QQ-C-530,


    OCR Scan
    mil-c-39012/smaastm-a582qq-c-530mil-p-19468+5l-p-403zz-r-765mil-g-45204mil-c-26074mil-c-14550 PDF

    2955G

    Abstract: NTF2955T1G NTF2955 NTF2955T1
    Contextual Info: NTF2955 Power MOSFET −60 V, −2.6 A, Single P−Channel SOT−223 Features • TMOS7 Design for low RDS on • Withstands High Energy in Avalanche and Commutation Modes • Pb−Free Package is Available http://onsemi.com V(BR)DSS RDS(on) TYP ID MAX −60 V


    Original
    ntf2955ot-223ntf2955/d2955g+2ntf2955t1gntf2955t1 PDF

    nt2955g

    Abstract: nt 2955g 2955G
    Contextual Info: NTD2955, NTD2955P, NVD2955 Power MOSFET −60 V, −12 A, P−Channel DPAK This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low−voltage, high− speed switching applications in power supplies, converters, and power


    Original
    ntd2955ntd2955pnvd2955ntd2955/d+3nt2955gnt 2955g2955g PDF

    nt2955g

    Abstract: nt 2955g 2955G ntd2955g NVD2955 NTP2955G NVD2955T4G NTD2955T
    Contextual Info: NTD2955, NTD2955P, NVD2955 Power MOSFET −60 V, −12 A, P−Channel DPAK This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low−voltage, high− speed switching applications in power supplies, converters, and power


    Original
    ntd2955ntd2955pnvd2955ntd2955/d+7nt2955gnt 2955g2955gntd2955gntp2955gnvd2955t4gntd2955t PDF

    2955g

    Abstract: nt 2955g nt2955g NTD2955 application note NTD2955G 2955G DPAK equivalent ntd2955 NTD2955-001 ntd2955t4g 369D
    Contextual Info: NTD2955, NTD2955P Power MOSFET -60 V, -12 A, P-Channel DPAK This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low-voltage, highspeed switching applications in power supplies, converters, and power motor controls. These devices are particularly well suited for bridge


    Original
    ntd2955ntd2955pntd2955/d2955g+9nt 2955gnt2955gntd2955 application notentd2955g2955g dpakequivalent ntd2955ntd2955-001ntd2955t4g369d PDF

    Contextual Info: NTD2955, NVD2955 Power MOSFET −60 V, −12 A, P−Channel DPAK This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low−voltage, high− speed switching applications in power supplies, converters, and power


    Original
    ntd2955nvd2955ntd2955/d PDF

    Contextual Info: NTF2955, NVF2955, NVF2955P Power MOSFET −60 V, −2.6 A, Single P−Channel SOT−223 Features • • • • TMOS7 Design for low RDS on Withstands High Energy in Avalanche and Commutation Modes AEC Q101 Qualified − NVF2955, NVF2955P These Devices are Pb−Free and are RoHS Compliant


    Original
    ntf2955nvf2955nvf2955pntf2955/d PDF