2955G Search Results
2955G Price and Stock
onsemi MJF2955GPNP Bipolar Power Transistor. - Rail/Tube (Alt: MJF2955G) |
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MJF2955G | Tube | 1,500 | 50 |
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MJF2955G | 308 |
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MJF2955G | Bulk | 300 |
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MJF2955G | 4,059 | 1 |
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MJF2955G | 1 |
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MJF2955G | 5,056 |
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MJF2955G | 15 Weeks | 50 |
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MJF2955G | 16 Weeks | 50 |
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MJF2955G |
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MJF2955G | 11,731 |
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onsemi MJ2955G15 A, 60 V PNP Bipolar Power Transistor. - Trays (Alt: MJ2955G) |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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MJ2955G | Tray | 500 | 8 Weeks | 100 |
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| MJ2955G | Bulk | 1 |
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MJ2955G | 1,027 |
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MJ2955G | Bulk | 113 | 1 |
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MJ2955G | Bulk | 5 |
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MJ2955G | 26 | 1 |
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MJ2955G | 12 Weeks | 100 |
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MJ2955G | 13 Weeks | 100 |
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MJ2955G | 11,076 |
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onsemi MJD2955G10 A, 60 V PNP Bipolar Power Transistor. - Rail/Tube (Alt: MJD2955G) |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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MJD2955G | Tube | 8,400 |
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| MJD2955G | Tube | 12 Weeks | 2,025 |
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MJD2955G |
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MJD2955G | Bulk | 675 |
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MJD2955G | Bulk | 1 |
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MJD2955G | 135 | 1 |
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| MJD2955G | 81 |
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MJD2955G | 750 | 1 |
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MJD2955G | 21 | 1 |
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MJD2955G | 17 Weeks | 75 |
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MJD2955G | 18 Weeks | 75 |
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MJD2955G | 1,590 |
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Bivar Inc ELM12955GDLLED Circuit Board Indicators Vert LED Assembly 5mm Green 565 nm |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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ELM12955GDL |
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ELM12955GDL | Bulk | 100 |
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onsemi MJ2955G.Trans Bjt Single, Pnp, 60V, 15A; |Onsemi MJ2955G. |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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MJ2955G. | Bulk | 100 |
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2955G Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
2955g
Abstract: NVF2955T1G nvf2955 A1 SOT-223 MOSFET NVF2955PT1G NTF2955T1G
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Original |
ntf2955nvf2955nvf2955pot-223+6 | |
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Contextual Info: NTF2955, NVF2955, NVF2955P Power MOSFET −60 V, −2.6 A, Single P−Channel SOT−223 Features • • • • Design for low RDS on Withstands High Energy in Avalanche and Commutation Modes AEC−Q101 Qualified − NVF2955, NVF2955P These Devices are Pb−Free and are RoHS Compliant |
Original |
ntf2955nvf2955nvf2955pot-223+2 | |
NTF2955T1GContextual Info: NTF2955, NVF2955 Power MOSFET −60 V, −2.6 A, Single P−Channel SOT−223 Features • • • • Design for low RDS on Withstands High Energy in Avalanche and Commutation Modes AEC−Q101 Qualified − NVF2955 These Devices are Pb−Free and are RoHS Compliant |
Original |
ntf2955nvf2955ntf2955/dntf2955t1g | |
nt 2955g
Abstract: 2955g
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Original |
ntd2955nvd2955ntd2955/dnt 2955g+1 | |
2955G
Abstract: NTF2955P NTF2955T1G NTF2955 NTF2955T1 MS10
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Original |
ntf2955ntf2955pot-223ntf2955/d+4 | |
nt2955g
Abstract: NTP2955G nt 2955g 2955G STD2955T4G DPak Package size NTD2955 application note 369D-01
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Original |
ntd2955ntd2955pstd2955ntd2955/d+8 | |
nt2955g
Abstract: nt 2955g
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Original |
ntd2955ntd2955pnvd2955ntd2955/d+2 | |
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Contextual Info: , f il e COPY 2 955-<2096 NOTES: 1. M A TIN G : Interface dimensions per Mil-C-39012/SMA series and Solitron/Microwave M D - 1 0 7 . 2. MATERIAL: Coupling Nut and Body: - - - - - - Stainless Steel per ASTM-A582, Type 303, Cond. A. Contact and Lock R i n g :— Beryllium Copper per QQ-C-530, |
OCR Scan |
mil-c-39012/smaastm-a582qq-c-530mil-p-19468+5 | |
2955G
Abstract: NTF2955T1G NTF2955 NTF2955T1
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Original |
ntf2955ot-223ntf2955/d2955g+2 | |
nt2955g
Abstract: nt 2955g 2955G
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Original |
ntd2955ntd2955pnvd2955ntd2955/d+3 | |
nt2955g
Abstract: nt 2955g 2955G ntd2955g NVD2955 NTP2955G NVD2955T4G NTD2955T
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Original |
ntd2955ntd2955pnvd2955ntd2955/d+7 | |
2955g
Abstract: nt 2955g nt2955g NTD2955 application note NTD2955G 2955G DPAK equivalent ntd2955 NTD2955-001 ntd2955t4g 369D
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Original |
ntd2955ntd2955pntd2955/d2955g+9 | |
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Contextual Info: NTD2955, NVD2955 Power MOSFET −60 V, −12 A, P−Channel DPAK This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low−voltage, high− speed switching applications in power supplies, converters, and power |
Original |
ntd2955nvd2955ntd2955/d | |
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Contextual Info: NTF2955, NVF2955, NVF2955P Power MOSFET −60 V, −2.6 A, Single P−Channel SOT−223 Features • • • • TMOS7 Design for low RDS on Withstands High Energy in Avalanche and Commutation Modes AEC Q101 Qualified − NVF2955, NVF2955P These Devices are Pb−Free and are RoHS Compliant |
Original |
ntf2955nvf2955nvf2955pntf2955/d |