NTL4502N Search Results

TMOS 80A

Abstract: NTL4502N NTL4502NT1
Contextual Info: NTL4502N Product Preview Quad N−Channel Module Features. • • • • • • • • • Four N-Channel TMOS in a Single Package High Input Impedance for Ease of Drive Ultra Low On-resistance RDS(on Provides Low Conduction Losses Very Fast Switching Times Provides Low Switching Losses

marking T10

Abstract: VG10
Contextual Info: NTL4502N Quad Power MOSFET 24 V, 15 A, N−Channel, PInPAKt Package Features • Four N−Channel MOSFETs in a Single Package • High Drain Current Up to 80A per Device, Single Pulse tp < 10 µs, • • • • • • • • RqJC = 1.5 °C/W High Input Impedance for Ease of Drive

NTL4502N

Abstract: NTL4502NT1 diode s1
Contextual Info: NTL4502N Quad Power MOSFET 24 V, 15 A, N−Channel, PInPAKt Package Features • Four N−Channel MOSFETs in a Single Package • High Drain Current Up to 80A per Device, Single Pulse tp < 10 s, • • • • • • • • RqJC = 1.5 °C/W High Input Impedance for Ease of Drive

NTL4502N

Abstract: NTL4502NT1
Contextual Info: NTL4502N Quad Power MOSFET 24 V, 15 A, N−Channel, PInPAKt Package Features • Four N−Channel MOSFETs in a Single Package • High Drain Current Up to 80A per Device, Single Pulse tp < 10 µs, • • • • • • • • RqJC = 1.5 °C/W High Input Impedance for Ease of Drive

C8PL

Contextual Info: NTL4502N Quad Power MOSFET 24 V, 15 A, N−Channel Features • Four N−Channel MOSFETs in a Single Package • High Drain Current Up to 80A per Device, Single Pulse tp < 10 s, • • • • • • • • RqJC = 1.5 °C/W High Input Impedance for Ease of Drive

BS170 116

Abstract: NTZD3155CT1G NTD18N06 NID5001 NUD3124LT1G NTD30N02 NTZD3155CT5G ntr4503nt1 NTMS4700NR2
Contextual Info: Data Sheet Page Data Sheet Page Data Sheet Page 2N7000 17, 26 MMBF170LT3 12, 95 NTA4001NT1 11, 259 2N7000RLRA 17, 26 MMBF170LT3 12, 95 NTA4151PT1 11, 263 2N7000RLRM 17, 26 MMBF2201NT 11, 98 NTA4153NT1 11, 268 2N7000RLRP 17, 26 MMBF2202PT1 11, 102 NTB125N02R

Contextual Info: ON Semiconductor Selector Guide − Power MOSFET Products MOSFET − Surface Mount RDS on Max (W) @ VGS = VDSS (V) 10 V 4.5 V/5.0 V* 2.5 V/2.7 V* 1.8 V QT Typ (nC) @ VGS = 4.5 V (5.0 V)/10 V* ID (A) PD (W) 23.6 125 113.6 Max Rating Config. Page No. NTB125N02R

MOSFET P-channel SOT-23

Abstract: NTD80N02 NTD18N06 NTMS3P03R2 MLD1N06CL NTHD5904N
Contextual Info: Power MOSFET Numeric Data Sheet Listing Chapter 1: Power MOSFET Data Sheets Device Function Page 2N7000 . . . . . . . . . . . . . . . . . . . . . Small Signal MOSFET 200 mAmps, 60 Volts . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26

CS5170

Abstract: MUR1620CTA NTP3055 SBRS81100T3G MC1741CP 2N5458 SUBSTITUTE SPEED CONTROL of DC MOTOR tda1085c DIODE SWCH 100V SS SOT23 TR znr SF 471 NCP1200AP60
Contextual Info: SGD501/D REV 17, April 10, 2004 NORTH AMERICA SALES AND DISTRIBUTION ON Semiconductor PRICE BOOK THIS BOOK IS IN COMPUTER SORT PRODUCT CLASSIFICATION − Please see General Information Section EFFECTIVE DATE: APRIL 10, 2004  General Information Elimination Of Ozone Depleting Chemicals . . . .