300PIS Search Results

VN99AB

Abstract: VN66AF 2N6658 VN46AF IRF620 IRF622 IRF630 IRF631 IRF632 IRF633
Contextual Info: Pin© MOSPOWER Selector Guide Continued N-Channc4 MOSPOWER (Continued) jopeies aaMOdSOW Device T0-220AB /o V T0-202AA C— IIlt~\1 /// 11 TO-39 1-6 Breakdown Voltage (Volts) rDS(on} (Ohms) Continuous (Amps) 200 200 200 200 200 200 170 150 150 150 150 150

ir 222

Abstract: IRF620 IRF622 IRF630 IRF631 IRF632 IRF633 IRF640 IRF641 IRF642
Contextual Info: Pin© jopeies aaMOdSOW MOSPOWER Selector Guide Continued N-Channc4 MOSPOWER (Continued) Device T0-220AB /o V T0-202AA C— IIlt~\1 /// 1 1 TO-39 1-6 Breakdown Voltage (Volts) rDS(on} (Ohms) Continuous (Amps) 200 200 200 200 200 200 170 150 150 150 150

Small Signal MOSFET

Contextual Info: N-CHANNEL SMALL SIGNAL MOSFET 2N7000 FEATURES TO-92 1 • Fast switching speeds • TO-92 Package ' V ’ i 1. S o u rc e 2. Gate 3. Drain PRODUCT SUMMARY Part Number V ds R d S o ii ta< on ) 2N7000 60V 5.0 n 200 mA MAXIMUM RATINGS Characteristic Drain-Source Voltage (1)

ssh20n50

Abstract: ssm20n45 20N45 2on50 20n50
Contextual Info: D E j ? ci b m 4 2 000S3Û7 1 | : N-CHÂNNEL * POWER MOSFETS ? / \ -fó SAMSUNG SE MI CO NDUCT OR INC 2 SSM20N45/20N50 SSH20N45/20N50 ’ •> f Preliminary Specifications PRODUCT SUMMARY 500 Volt, 0.3 Ohm SFET V ds RoS on Id SSM20N45 450V 0.3 0 20A SSM20N50

2SC3184

Abstract: 20HB1
Contextual Info: Ordering number: EN 1252C 2SC3184 N 0.1252C NPN Triple Diffused Planar Silicon Transistor SAÜYO i Switching Regulator Applications Features •High breakdown voltage Vcbo =900V . •Fast switching speed. •Wide ASO. min VCB = 800V,IE = 0 Veb = 5V,Ic = 0

fls2

Abstract: PPR1356 PPR1357 PPR1358 PPR1359
Contextual Info: OD II I High Efficiency, 30A Center-Tap Diodes PPR1356 PPR1357 PPR1358 PPR1359 FEATURES ABSOLUTE MAXIMUM RATINGS • Very Low Forward Voltage Peak Inverse Voltage, PPR1356 200V • Very Fast S w itching Speed Peak Inverse Voltage, PPR1357 300V • Convenient Package

Contextual Info: KSH31/31C NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE AMPLIFIER LOW SPEED SWITCHING APPLICATIONS D-PACK FOR SURFACE MOUNT APPLICATIONS D-PAK • Load Formed for Surface Mount Application No Suffix • Straight Lead (I.PACK, I * Suffix) • Electrically Similar to Popular TIP31 andTIP31C

IRF 850

Abstract: IRf 92 0151 623 13a 8Q DIODE irf640 IRF340 IRF350 IRF440 IRF450 IRF740
Contextual Info: Ü Ü A C D ^ U / C D M i v i a Dr/\Wi i v i v ^ i v T T k iv r i i i i i v t i v u v i w i C A lA A ^ / \ r f^ .n \M é g ^ i ^ v i v i w u iv i^ 1-2 MOSPOWER Prime Product Selector Guide *2 0 0 °C RATING I i Packages: u BVqss Volts 450-500 TO-3 TO-220

irf 111

Abstract: IRF420 IRF422 IRF430 IRF432 IRF440 IRF442 IRF450 IRF452 VN5001A
Contextual Info: !R Selector Guide ] MOSPOWER Selector Guide B Siliconix N-Channel MOSPOWER Device u TO-3 Breakdown Voltage Volts 500 500 500 500 500 500 500 500 500 500 500 450 450 450 450 450 450 450 450 450 450 450 400 400 400 400 400 400 400 400 400 400 400 350 350 350

irf 80 n

Abstract: irf 30A IRF340 IRF350 IRF440 IRF450 IRF740 IRF820 IRF840 VNP002A
Contextual Info: Ü Ü A C D ^ U /C D M i v i a D r /\W i iv iv ^ i v T T k iv r i i i i i v t iv u v iw i C A lA A ^ /\r f^ .n \M é g ^ i^ v iv i w u iv i^ 1-2 MOSPOWER Prime Product Selector Guide *2 0 0 °C RATING I i Packages: BV qss Volts 4 5 0 -5 0 0 TO-3 TO-220 S ilic o n ix

IRf 444 MOSFET

Abstract: DIODE Z32 irf9z34 IRF9Z30 irf9z34 mosfet IRF z34 MOSFET IRF high current p-channel P-channel power mosfet irf IRF9Z35 IRf 444
Contextual Info: SAMSUNG ELECTRONICS INC fc^E D • 7^4142 IRF9Z34/Z35 IRF9Z30/Z32 □ □ 1 2 2 Iìc T77 M S U G K P-CHANNEL POWER MOSFETS FEATURES • • • • • • • Lower R ds <on > Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure

smd diode GW

Abstract: diode ESM 315 K451
Contextual Info: PD - 9.1647 International IOR Rectifier IRF7523D1 PRELIMINARY FETKY MOSFET and Schottky Diode • Co-packaged HEXFET Power MOSFET and Schottky Diode • N-Channel HEXFET • Low Vp Schottky Rectifier • Generation V T echnology • Micro8 Footprint VDSS =

2907

Abstract: 2907a BT2907 MMBT2907-2B sot-23 marking LC amplifier 446 mhz pn 2907 MMBT2907A-2F PN2907 marking AM sot-23
Contextual Info: I Ileo IIUH PN2907/ A / M M BT2907/ A PNP GENERAL PURPOSE AMPLIFIER INCORPORATED Features Epitaxial Planar Die Construction Available in both Thru-Hole and Surface Mount Packages Suitable for Switching and Am plifier Applications SOT-23 TO-92 EJ -HfK L, A

ztx753

Abstract: ZTX752 ztx751 SE163
Contextual Info: PNP Silicon Planar Medium Power Transistors ZTX750 ZTX752 ZTX751 ZTX753 FEA T U R E S • • • • • • • • • 1.5W power dissipation at T atnb = 2 5 ° C * 2V continuous Iq Excellent gain characteristics to 2A High V CE0: up to 100V Low saturation voltages

transistor m4a

Contextual Info: PNP EPITAXIAL SILICON DARLINGTON TRANSISTOR TIPI 25/126/127 MEDIUM POWER LINEAR SWITCHING APPLICATIONS • Complement to TIPI 20/121/122 ABSOLUTE MAXIMUM RATINGS Ta = 25°C Characteristic Collector-Base Voltage: TIP125 : TIP126 : TIP127 Collector-Emitter Voltage

2SK132

Abstract: 2SK133 HPWR-6502 HPWR-6503 HPWR-6504 IRF122 IRF223 IRF340 IRF441 VN4001A
Contextual Info: MOSPOWER Cross Reference List MOSPOWER Cross Reference List HEWLETT-PACKARD Industry Part No. HPWR-6501 HPWR-6502 HPWR-6503 HPWR-6504 BVd s S Volts rDS(on) (Ohms) Package 450 400 450 400 0.85 0.74 1.0 1.0 TO-3 TO -3 TO-3 TO-3 100 120 140 160 180 200 160

VN10LF

Abstract: scr 209
Contextual Info: PLESSEY SE NI COND /D IS CR ET E 03_ ~ N-channel enhancement mode vertical D M O S FET r-z7-z.r VN10LF A B S O L U T E M A X IM U M R A T IN G S Parameter Sym bol Drain-source voltage I>e J|722GS33 □ □Üti75ti 7 ' SO T -2 3 60 V ds Unit V Continuous drain current at TA = 25°C

SM 9613

Abstract: 9611 IR 9613 IRF9612 IRF961
Contextual Info: P-CHANNEL POWER MOSFETS IRF9610/9611/9612/9613 FEATURES • • • • • • • Lower Rds <o n Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high tem perature reliability

Contextual Info: TIP41 SERIRES TIP41/41A/41B/41C NPN EXITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR SWITCHING APPLICATIONS TO-220 • Complement to TIP42/42AM2 B/42C ABSOLUTE MAXIMUM RATINGS (Ta=25°C ) Characteristic Collector-Base Voltage Collector-Emitter Voltage Symbol

irf 150 equivalent

Abstract: 2sk135 equivalent hitachi 2sk135 irf150 2SK134 equivalent irf 111 irf120 IRF351 IRF331 2SK132
Contextual Info: MOSPOWER Cross Reference List MOSPOWER Cross Reference List HEWLETT-PACKARD Industry Part No. HPWR-6501 HPWR-6502 HPWR-6503 HPWR-6504 BVd s S Volts rDS(on) (Ohms) Package 450 400 450 400 0.85 0.74 1.0 1.0 TO-3 TO -3 TO-3 TO-3 100 120 140 160 180 200 160

SSH10N70

Contextual Info: N-CHANNEL POWER MOSFETS SSH10N70 FEATURES • Low er Rds <on • • • • • • Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high temperature reliability

Contextual Info: KSC2335 NPN EPITAXIAL SILICON TRANSISTOR HIGH SPEED, HIGH VOLTAGE SWITCHING INDUSTRIAL USE T 0 -2 2 0 ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current DC 'C o lle c to r Current (Pulse)

FR 220

Abstract: IRFR220 ir 222 fr220
Contextual Info: N-CHANNEL POWER MOSFETS IRFR220/222 FEATURES • • • • • • • D-PACK Lower Rds ON Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high temperature reliability

f9530

Abstract: IRF9530 L 9132 diode 9532 IRF9530 mosfet IRF9530* p-channel power MOSFET 9532 mosfet IR mosfets OA 91 diode ir 9133
Contextual Info: IRF9530/9531 /9532Z9533 IRFP9130/9131 /9132/9133 P-CHANNEL POWER MOSFETS FEATURES • • • • • • • TO-220 Lower Ros ON Improved inductive ruggedness Fast switching tim es Rugged polysilicon gate cell structure Lower input capacitance Extended sate operating area